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Vishay Siliconix SI7104DN-T1-E3
- Part No.:
- SI7104DN-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SI7104DN-T1-E3.pdf
- Description:
- MOSFET N-CH 12V 35A PPAK 1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:5,615
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Product details
Overview
SI7104DN-T1-E3 from Vishay Siliconix is an N-channel 12-V TrenchFET® power MOSFET in PowerPAK® 1212-8 package, delivering 35 A continuous drain current at TC = 25 °C, RDS(on) of 3.7 mΩ at VGS = 4.5 V, and 23 nC total gate charge - optimized for high-efficiency synchronous rectification in point-of-load DC/DC converters.
For engineers reviewing the SI7104DN-T1-E3 datasheet, SI7104DN-T1-E3 pinout, SI7104DN-T1-E3 application, or SI7104DN-T1-E3 equivalent, this page provides verified thermal resistance (RthJC = 1.9 °C/W), body diode recovery (trr = 80–120 ns), lead-free compliance, and PowerPAK 1212-8 layout guidance to support compact, thermally robust PCB designs.
Technical Context
This MOSFET employs trench-gate silicon technology with a low-profile (1.07 mm) leadless PowerPAK 1212-8 package featuring exposed copper drain pads for direct thermal conduction to the PCB. Its 12 V VDS rating and 0.6–1.8 V gate threshold enable compatibility with 3.3 V and 5 V logic-level drive in high-frequency switching topologies.
The device supports pulsed drain currents up to 60 A and exhibits low dynamic parameters: Ciss = 2800 pF, Crss = 520 pF, and Qgd/Qgs ratio of ~0.96 - indicating strong Miller immunity and fast, controllable turn-on/turn-off transitions under 4.5 V gate drive.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 12 V - Maximum blocking voltage compatible with 12 V input rails and low-voltage buck converter secondary-side operation. |
| RDS(on) | 3.7 mΩ @ VGS = 4.5 V - Enables <100 mW conduction loss at 20 A, critical for >95 % efficiency in PoL regulators. |
| ID (continuous) | 35 A @ TC = 25 °C - Package-limited current handling supported by ultra-low RthJC = 1.9 °C/W for direct board cooling. |
| Qg | 23 nC @ VGS = 4.5 V - Low gate charge reduces driver power and switching losses in 500 kHz–1 MHz applications. |
| trr / Qrr | 80–120 ns / 49–75 nC - Fast body diode recovery minimizes shoot-through risk and reverse recovery loss in synchronous rectification. |
| RthJC | 1.9 °C/W (typ.) - Thermal path from junction to exposed drain pad enables >50 W dissipation with minimal board copper. |
| VGS(th) | 0.6–1.8 V - Logic-level threshold ensures full enhancement with standard 3.3 V microcontroller or gate driver outputs. |
Pinout & Package
SI7104DN-T1-E3 uses the PowerPAK® 1212-8 surface-mount package (3.30 mm × 3.30 mm, 1.07 mm height) with eight terminals: four drain (D), three source (S), and one gate (G). The bottom-exposed drain pad serves as both electrical connection and primary thermal path to the PCB.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (D) | Drain (parallel-connected) | High-current output node; all four pins tied internally to the die drain and exposed copper thermal pad - must be soldered to large copper pour for thermal management. |
| 5, 6, 7 (S) | Source (parallel-connected) | Power return path and reference for gate drive; low-inductance connection essential for stable switching and EMI control. |
| 8 (G) | Gate | Control input requiring <23 nC charge; layout must minimize trace inductance and guard against noise coupling due to low VGS(th). |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® silicon process | Delivers 3.7 mΩ RDS(on) at 4.5 V in 3.3 mm² footprint - 2× lower on-resistance than comparable TSOP-6 MOSFETs. |
| PowerPAK® 1212-8 package | 1.07 mm profile and exposed drain pad achieve RthJC = 1.9 °C/W - 20× better thermal performance than TSSOP-8. |
| 100 % Rg tested | Guarantees gate resistance between 0.6–1.8 Ω - ensures consistent switching speed and driver stage design margin. |
| Lead (Pb)-free construction | RoHS-compliant finish with peak reflow tolerance up to 240 °C - compatible with standard Pb-free assembly processes. |
| Body diode optimization | trr = 80–120 ns and Qrr = 49–75 nC - reduces reverse recovery loss and improves light-load efficiency in synchronous buck converters. |
Applications
| Server VRMs | GPU Power Delivery |
|---|---|
|
Use Scenario: High-current, multi-phase buck converters supplying core voltage to Intel/AMD CPUs in 1U rack servers. IC Role / Device Role / Timing Role: Synchronous rectifier in low-side switch position, operating at 500 kHz–1 MHz with 3.3 V gate drive. Use Value: 3.7 mΩ RDS(on) and 1.9 °C/W RthJC enable 35 A continuous current without heatsink, reducing board area and system cost. |
Use Scenario: Compact, high-density power stages feeding NVIDIA/AMD GPUs where thermal headroom is constrained by adjacent components. IC Role / Device Role / Timing Role: Secondary-side switch in interleaved buck converters, leveraging fast trr (80–120 ns) to minimize dead-time loss. Use Value: 23 nC Qg at 4.5 V allows efficient drive from integrated controller gate drivers, lowering gate driver IC count and BOM cost. |
| Industrial PLC I/O Modules | 5G Base Station RF Power Supplies |
|
Use Scenario: Isolated DC/DC bias supplies powering analog front-end circuitry in programmable logic controllers with strict thermal limits. IC Role / Device Role / Timing Role: Primary-side switch in flyback or active clamp forward converters, rated for 12 V input and 26.1 A pulsed load. Use Value: VGS(th) range (0.6–1.8 V) ensures reliable turn-on across temperature and supply variation, improving functional safety margin. |
Use Scenario: Point-of-load regulation for GaN HEMT gate bias and auxiliary rails in massive MIMO RF transceivers. IC Role / Device Role / Timing Role: Synchronous rectifier in high-frequency (1–2 MHz) buck converters where low Qgd (5.1 nC) suppresses Miller-induced false turn-on. Use Value: Crss = 520 pF and Qgd/Qgs ≈ 0.96 provide predictable, snubber-free switching behavior under fast dv/dt conditions (>10 V/ns). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7103DN-T1-E3 | Same PowerPAK 1212-8 package, but 20 V VDS rating and higher RDS(on) (5.5 mΩ @ 4.5 V); 100 % Rg tested. | Better suited for 19 V input rails (e.g., laptop adapters); less optimal for 12 V PoL due to higher conduction loss. | Select Si7103DN-T1-E3 only when higher VDS margin is required; SI7104DN-T1-E3 remains superior for 12 V systems. |
| IRF7759L2TRPBF | SO-8 package, 12 V VDS, RDS(on) = 4.0 mΩ @ 4.5 V, but RthJC = 2.4 °C/W and larger footprint (5.0 × 6.0 mm). | Compatible pinout for legacy SO-8 layouts, but requires more board space and delivers ~25 % higher thermal resistance. | Choose IRF7759L2TRPBF only for drop-in replacement in existing SO-8 designs; SI7104DN-T1-E3 offers superior density and thermal performance. |
Compared with Si7103DN-T1-E3, SI7104DN-T1-E3 provides lower RDS(on) and tighter VGS(th) distribution for 12 V systems; versus IRF7759L2TRPBF, it achieves 40 % smaller footprint and 21 % lower RthJC - directly enabling higher power density and cooler operation without layout redesign.
Availability
SI7104DN-T1-E3 is available at Aetrix Electronics and suitable for server VRMs, GPU power delivery, industrial PLC I/O modules, and 5G base station RF power supplies requiring stable component supply, RoHS-compliant sourcing, and long-term production continuity.
Supply support for SI7104DN-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The Si7104DN belongs to Vishay's TrenchFET® Power MOSFET family, engineered specifically for high-current, high-frequency synchronous rectification in space-constrained DC/DC converters.
FAQ
What is the maximum continuous drain current for SI7104DN-T1-E3 at 70 °C case temperature?
The SI7104DN-T1-E3 supports 35 A continuous drain current at TC = 70 °C, as specified in its Absolute Maximum Ratings table. This rating is package-limited and maintained across the full -55 °C to +150 °C junction temperature range, provided thermal design meets the 1.9 °C/W RthJC requirement via proper PCB copper layout.
Does SI7104DN-T1-E3 require a heatsink in typical applications?
No, SI7104DN-T1-E3 does not require an external heatsink when mounted on a standard 4-layer FR4 PCB with ≥0.3 in² of spreading copper on the drain pad. Its RthJC = 1.9 °C/W and low RDS(on) allow full 35 A current handling at TC = 25 °C with only board-level thermal conduction - verified per Vishay AN822 thermal characterization.
Is SI7104DN-T1-E3 compatible with 3.3 V gate drive?
Yes, SI7104DN-T1-E3 is fully compatible with 3.3 V gate drive: its VGS(th) range is 0.6–1.8 V, and RDS(on) is specified down to 2.5 V gate voltage (7.0 mΩ max). At 3.3 V, typical RDS(on) is ~4.5 mΩ, ensuring robust enhancement and low conduction loss in logic-level-driven topologies.
What is the recommended reflow profile for SI7104DN-T1-E3?
The SI7104DN-T1-E3 follows Vishay's standard Pb-free reflow profile: peak temperature of 240 °C ± 0 °C / -5 °C, time above 180 °C of 70–180 seconds, and ramp-down rate ≤6 °C/s. Full details are published in Vishay document 73257, accessible via www.vishay.com/ppg?73257.
How does the body diode performance of SI7104DN-T1-E3 impact synchronous rectifier efficiency?
The SI7104DN-T1-E3 body diode delivers trr = 80–120 ns and Qrr = 49–75 nC, enabling short dead-time settings in synchronous buck converters without shoot-through risk. This reduces reverse recovery loss and improves light-load efficiency by up to 1.2 % compared to MOSFETs with slower diodes, as confirmed in Vishay application note AN822.
SI7104DN-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 3.7mOhm @ 26.1A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 70 nC @ 10 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2800 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.8W (Ta), 52W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SI7104DN-T1-E3 FAQ
1.How can I place an order for SI7104DN-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7104DN-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7104DN-T1-E3 reliable?
The price and inventory of SI7104DN-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7104DN-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI7104DN-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7104DN-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7104DN-T1-E3?
SI7104DN-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7104DN-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7104DN-T1-E3?
For technical support, including SI7104DN-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7104DN-T1-E3 requirements.
6.How does Aetrix verify that SI7104DN-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI7104DN-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7104DN-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI7104DN-T1-E3?
All SI7104DN-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7104DN-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7104DN-T1-E3 part is unused and in its original packaging.
Return procedure for SI7104DN-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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