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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7107DN-T1-E3

Name: SI7107DN-T1-E3
Brand: Vishay Siliconix
SKU: SI7107DN-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7107DN-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SI7107DN-T1-E3.pdf

Description:: MOSFET P-CH 20V 9.8A PPAK1212-8

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Product details

Overview

SI7107DN-T1-E3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® Power MOSFET rated for -20 V drain-source voltage, with R_DS(on) = 0.0108 Ω at V_GS = -4.5 V and continuous drain current of -15.3 A at T_A = 25 °C. It is designed for high-efficiency load switching in space-constrained portable electronics.

For engineers reviewing the SI7107DN-T1-E3 datasheet, SI7107DN-T1-E3 pinout, SI7107DN-T1-E3 application, or SI7107DN-T1-E3 equivalent, key selection criteria include low-threshold gate drive compatibility (1.8 V rated), ultra-low on-resistance for battery runtime extension, thermal performance in PowerPAK 1212-8, and Pb-free/halogen-free compliance per RoHS and IEC 61249-2-21.

Technical Context

This MOSFET uses trench-gate silicon technology to achieve enhanced conduction efficiency and fast switching dynamics. Its gate threshold voltage range (-0.4 V to -1.0 V) enables reliable turn-on with low-voltage logic controllers, while its low Q_g (34–44 nC) and Q_gd (9.2 nC) support high-frequency PWM operation.

The device integrates an intrinsic body diode with V_SD = -0.7 to -1.2 V at I_S = -3.2 A, supporting synchronous rectification and reverse-current blocking. Thermal design is enabled by R_thJC = 1.9–2.4 °C/W and R_thJA = 24–33 °C/W (t ≤ 10 s), optimized for surface-mount use on 1" × 1" FR4 boards.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - Maximum drain-source blocking voltage for low-voltage power rail switching
R_DS(on)	0.0108 Ω @ V_GS = -4.5 V - Enables <15 mW conduction loss at 15 A, critical for battery life
I_D (continuous)	-15.3 A @ T_A = 25 °C - Supports high-current load switching without external heatsinking
V_GS(th)	-0.4 to -1.0 V - Ensures robust turn-on with 1.8 V logic-level gate drivers
Q_g	34–44 nC - Low total gate charge reduces driver power and switching losses
R_thJC	1.9–2.4 °C/W - Enables efficient heat transfer to PCB copper, essential for compact layouts
P_D	3.8 W @ T_A = 25 °C - Sustains >15 A operation with minimal board area footprint

Pinout & Package

Package: PowerPAK® 1212-8 (3.3 mm × 3.3 mm, 1.07 mm profile), leadless, bottom-termination package with exposed drain pads for thermal and electrical performance.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (bottom view)	Drain (D), Source (S), Gate (G)	Pins 1–3 and 5–8 are parallel-connected Drain terminals; Pin 4 is Gate; Pins 6–8 are Source - provides low-inductance, high-current paths and optimal thermal spreading

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 20% lower R_DS(on) vs. planar P-channel MOSFETs at same die size, improving power density
1.8 V gate-rated operation	Guarantees full enhancement with single-cell Li-ion or 1.8 V/2.5 V logic outputs, eliminating level-shifting circuitry
PowerPAK 1212-8 package	Reduces R_thJA by ~40% vs. SO-8 and cuts board area by 65%, enabling ultra-thin portable designs
Halogen-free & RoHS-compliant	Fulfills IEC 61249-2-21 and EU Directive 2002/95/EC requirements for green electronics manufacturing

Applications

Smartphone Power Management	Tablet Battery Protection
Use Scenario: High-side load switch controlling main system power rail during sleep/wake transitions. IC Role / Device Role / Timing Role: P-channel MOSFET used as active-high controlled power switch with integrated body diode for reverse-current blocking. Use Value: 0.0108 Ω R_DS(on) limits voltage drop to <160 mV at 15 A, preserving battery voltage headroom and reducing self-heating.	Use Scenario: Overcurrent and short-circuit protection in battery charging path between charger IC and cell. IC Role / Device Role / Timing Role: Low-threshold P-MOSFET configured as reverse-polarity and fault-isolation switch. Use Value: -1.0 V V_GS(th) max ensures fast turn-off during fault detection, limiting energy dissipation during transient overloads.
Wireless Earbud Charging Case	Portable Medical Monitor Power Path
Use Scenario: Dual-role switch managing both battery-to-system and USB-to-battery power paths. IC Role / Device Role / Timing Role: Bidirectional load switch leveraging low R_DS(on) and symmetric source-drain characteristics. Use Value: 1.07 mm profile allows integration into sub-12 mm thick charging cases without compromising thermal margin.	Use Scenario: Critical power sequencing switch ensuring regulated 3.3 V supply only activates after MCU initialization. IC Role / Device Role / Timing Role: Controlled enable switch with tight V_GS(th) distribution for predictable turn-on timing. Use Value: ±0.3 V V_GS(th) tolerance supports deterministic power-up sequencing across temperature (-55 to 150 °C).

Smartphone Power Management

Tablet Battery Protection

Use Scenario: High-side load switch controlling main system power rail during sleep/wake transitions.

IC Role / Device Role / Timing Role: P-channel MOSFET used as active-high controlled power switch with integrated body diode for reverse-current blocking.

Use Value: 0.0108 Ω R_DS(on) limits voltage drop to <160 mV at 15 A, preserving battery voltage headroom and reducing self-heating.

Use Scenario: Overcurrent and short-circuit protection in battery charging path between charger IC and cell.

IC Role / Device Role / Timing Role: Low-threshold P-MOSFET configured as reverse-polarity and fault-isolation switch.

Use Value: -1.0 V V_GS(th) max ensures fast turn-off during fault detection, limiting energy dissipation during transient overloads.

Wireless Earbud Charging Case

Portable Medical Monitor Power Path

Use Scenario: Dual-role switch managing both battery-to-system and USB-to-battery power paths.

IC Role / Device Role / Timing Role: Bidirectional load switch leveraging low R_DS(on) and symmetric source-drain characteristics.

Use Value: 1.07 mm profile allows integration into sub-12 mm thick charging cases without compromising thermal margin.

Use Scenario: Critical power sequencing switch ensuring regulated 3.3 V supply only activates after MCU initialization.

IC Role / Device Role / Timing Role: Controlled enable switch with tight V_GS(th) distribution for predictable turn-on timing.

Use Value: ±0.3 V V_GS(th) tolerance supports deterministic power-up sequencing across temperature (-55 to 150 °C).

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SI7109DN-T1-E3	R_DS(on) = 0.0075 Ω @ -4.5 V, higher I_D = -20.5 A, same PowerPAK 1212-8 package	Better conduction efficiency at >15 A loads; slightly higher gate charge (48 nC)	Select when peak current exceeds 15.3 A or thermal margin is constrained
DMN2053LFG-7	R_DS(on) = 0.012 Ω @ -4.5 V, SOT-23-6 package, lower I_D = -4.5 A	Smaller footprint but limited to <5 A; unsuitable for high-current portable rails	Choose only for low-power subsystems where board area is more critical than current capacity

Compared with SI7107DN-T1-E3, SI7109DN-T1-E3 offers lower conduction loss at higher currents but requires re-evaluation of gate drive strength due to increased Q_g; DMN2053LFG-7 trades current capability for miniaturization, making it viable only in sub-5 A signal-path switches-not main power rails.

Availability

SI7107DN-T1-E3 is available at Aetrix Electronics and suitable for smartphone power management, tablet battery protection, and wireless earbud charging case designs requiring stable component supply and RoHS-compliant sourcing.

Supply support for SI7107DN-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The Si7107DN series belongs to Vishay's TrenchFET® Power MOSFET product line, engineered specifically for high-current, low-voltage load switching in battery-powered portable electronics where thermal density and gate-drive compatibility are critical.

FAQ

What is the maximum continuous drain current rating for SI7107DN-T1-E3 at 70 °C ambient temperature?

The SI7107DN-T1-E3 supports -7.8 A continuous drain current at T_A = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK 1212-8 package under natural convection conditions. Engineers must verify PCB copper area and airflow in their layout to sustain this current reliably. The SI7107DN-T1-E3 datasheet (Document 73041, Rev. E) confirms this value under steady-state conditions with proper thermal management.

Does SI7107DN-T1-E3 support 1.8 V logic-level gate drive?

Yes, the SI7107DN-T1-E3 is explicitly rated as a "1.8 V Rated" TrenchFET® MOSFET. Its gate threshold voltage range of -0.4 V to -1.0 V ensures full enhancement with 1.8 V microcontroller GPIOs or dedicated low-voltage gate drivers. This eliminates the need for external level shifters in single-cell Li-ion systems. The SI7107DN-T1-E3 achieves R_DS(on) = 0.020 Ω at V_GS = -1.8 V, confirming functional operation at that voltage.

What is the thermal resistance from junction to case (R_thJC) for SI7107DN-T1-E3?

The SI7107DN-T1-E3 has a typical junction-to-case thermal resistance of 1.9 °C/W and a maximum of 2.4 °C/W under steady-state conditions. This low R_thJC is enabled by the PowerPAK 1212-8 package's exposed drain pad and optimized internal construction. It allows direct heat transfer from the silicon die to the PCB ground plane, making the SI7107DN-T1-E3 suitable for thermally demanding portable applications without added heatsinks.

Is SI7107DN-T1-E3 halogen-free and RoHS-compliant?

Yes, the SI7107DN-T1-E3 is both halogen-free per IEC 61249-2-21 and compliant with the RoHS Directive 2002/95/EC. The "-E3" suffix denotes lead-free (Pb-free) termination, and the device meets all material restrictions for environmentally conscious electronics manufacturing. This compliance is verified in the official Vishay documentation (S10-0347-Rev. E) and applies to the entire production lot of SI7107DN-T1-E3.

Can SI7107DN-T1-E3 be used in bidirectional current applications?

The SI7107DN-T1-E3 features a symmetrical source-drain structure and an integrated body diode with V_SD = -0.7 to -1.2 V, enabling controlled bidirectional conduction in specific topologies like battery path management. However, its P-channel configuration is optimized for high-side switching; bidirectional use requires careful attention to gate control sequencing and voltage polarity. The SI7107DN-T1-E3 datasheet confirms diode forward characteristics and safe operating area limits for such operation.

SI7107DN-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 9.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 10.8mOhm @ 15.3A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 450µA

Gate Charge (Qg) (Max) @ Vgs:: 44 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SI7107DN-T1-E3 FAQ

1.How can I place an order for SI7107DN-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7107DN-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7107DN-T1-E3 reliable?

The price and inventory of SI7107DN-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7107DN-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI7107DN-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7107DN-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7107DN-T1-E3?

SI7107DN-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7107DN-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7107DN-T1-E3?

For technical support, including SI7107DN-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7107DN-T1-E3 requirements.

6.How does Aetrix verify that SI7107DN-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI7107DN-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7107DN-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI7107DN-T1-E3?

All SI7107DN-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7107DN-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7107DN-T1-E3 part is unused and in its original packaging.

Return procedure for SI7107DN-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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