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Vishay Siliconix SI7107DN-T1-GE3
- Part No.:
- SI7107DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SI7107DN-T1-GE3.pdf
- Description:
- MOSFET P-CH 20V 9.8A PPAK1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:2,345
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Product details
Overview
SI7107DN-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® Power MOSFET rated for -20 V drain-source voltage, with 0.0108 Ω RDS(on) at VGS = -4.5 V and -15.3 A continuous drain current at TA = 25 °C. It operates as a low-side load switch in portable power management circuits requiring ultra-low on-resistance and 1.8 V gate drive compatibility.
For engineers reviewing the SI7107DN-T1-GE3 datasheet, SI7107DN-T1-GE3 pinout, SI7107DN-T1-GE3 application, or SI7107DN-T1-GE3 equivalent, key selection criteria include verified RDS(on) at 1.8 V/2.5 V/4.5 V gate drive, PowerPAK® 1212-8 thermal performance (RthJC = 2.4 °C/W max), and halogen-free compliance per IEC 61249-2-21.
Technical Context
This device uses trench-gate silicon technology to achieve enhanced conduction efficiency at low gate voltages. Its threshold voltage range of -0.4 V to -1.0 V enables reliable turn-on with 1.8 V logic-level control, while the integrated body diode supports reverse-current paths in buck converters and hot-swap circuits.
The PowerPAK® 1212-8 package delivers low-profile (1.07 mm) surface-mount integration with exposed-drain thermal pads. Thermal resistance from junction-to-case is specified at 2.4 °C/W max, enabling high-current operation without external heatsinking on standard FR4 PCBs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum blocking voltage for battery-input switching up to 2-cell Li-ion systems |
| RDS(on) @ VGS = -4.5 V | 0.0108 Ω - Enables <150 mW conduction loss at 15.3 A, critical for thermal budget in compact portable designs |
| ID (continuous, TA = 25 °C) | -15.3 A - Sustained load-switching capability without forced airflow or copper pour |
| VGS(th) | -0.4 to -1.0 V - Ensures full enhancement with 1.8 V microcontroller GPIO, eliminating level-shifter need |
| Qg | 34–44 nC - Low gate charge supports high-frequency PWM control with minimal driver power loss |
| RthJC | 1.9–2.4 °C/W - Direct thermal path from die to PCB enables efficient heat transfer through exposed drain pads |
| VSD | -0.7 to -1.2 V - Forward voltage of integrated body diode suitable for synchronous rectification in DC-DC stages |
Pinout & Package
Package: PowerPAK® 1212-8, leadless, bottom-exposed drain terminals, 3.30 mm × 3.30 mm footprint, 1.07 mm height.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| S (Source) | Current return path for P-channel conduction | Three parallel source terminals provide low-inductance return and reduce IR drop in high-di/dt switching |
| G (Gate) | Control electrode for channel formation | Single gate pad optimized for low-capacitance routing and EMI-sensitive gate drive layout |
| D (Drain) | Main current-carrying terminal (exposed on bottom) | Four large-area drain terminals form thermal and electrical interface to PCB ground plane |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables stable RDS(on) down to 1.8 V gate drive, supporting direct interface with low-voltage MCUs |
| PowerPAK® 1212-8 package | Reduces RthJA by >30% vs. SO-8, allowing 3.8 W steady-state dissipation without heatsink |
| Halogen-free construction | Meets IEC 61249-2-21, enabling compliance in consumer electronics with strict material declarations |
| Ultra-low Qgd/Qg ratio | 9.2 nC / 44 nC = 21% - Minimizes Miller-induced switching instability in high-dV/dt environments |
Applications
| Smartphone Power Management | Wireless Headset Battery Protection |
|---|---|
Use Scenario: Load switching between battery and system rail during USB charging and discharge cycles. IC Role / Device Role: High-side P-channel switch controlling power delivery to PMIC input. Use Value: 0.0108 Ω RDS(on) limits voltage drop to <165 mV at 15.3 A, preserving battery runtime and thermal margin. | Use Scenario: Isolating battery from charging circuitry when fully charged or during fault conditions. IC Role / Device Role: Reverse-polarity and overcurrent protection switch in Li-ion charging path. Use Value: -1.0 V VGS(th) ensures robust turn-on with 1.8 V charger IC control signals, eliminating external bias networks. |
| Portable Medical Monitor Power Sequencing | Bluetooth Speaker Load Switching |
Use Scenario: Controlled power-up of sensor analog front-end and digital subsystems to prevent inrush current. IC Role / Device Role: Soft-start enabled load switch managing sequential rail activation. Use Value: Low Qg (44 nC) allows precise gate ramp control using RC networks, achieving <10 ms turn-on delay with minimal component count. | Use Scenario: Enabling/disabling speaker amplifier stage based on Bluetooth connection status. IC Role / Device Role: Low-quiescent current power gate driven directly from Bluetooth SoC GPIO. Use Value: 100 nA IGSS ensures negligible leakage during standby, extending shelf life in always-on audio devices. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7109DN-T1-GE3 | Higher RDS(on) (0.0145 Ω @ -4.5 V), same package and VDS | Lower current handling (-12.5 A vs. -15.3 A); suited for space-constrained 10 A loads | Select when lower gate charge (30 nC) outweighs on-resistance penalty in high-frequency switching |
| DMN2011UFD-7 | Different package (UDFN-6), slightly higher RDS(on) (0.012 Ω @ -4.5 V), same VDS | Smaller footprint (2.0 × 2.0 mm) but higher RthJA (100 °C/W); requires tighter thermal design | Prefer for ultra-compact layouts where board area savings justify thermal derating |
Compared with Si7109DN-T1-GE3 and DMN2011UFD-7, the SI7107DN-T1-GE3 delivers the lowest RDS(on) in the PowerPAK® 1212-8 form factor, making it optimal for thermally constrained 15 A portable power switches where gate drive voltage is limited to 1.8–2.5 V.
Availability
SI7107DN-T1-GE3 is available at Aetrix Electronics and suitable for smartphone power sequencing, wireless headset battery protection, and portable medical monitor load switching requiring stable component supply across extended production lifecycles.
Supply support for SI7107DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The Si7107DN belongs to Vishay's TrenchFET® Gen IV P-channel MOSFET family, engineered specifically for high-efficiency, low-voltage load switching in battery-powered consumer electronics.
FAQ
What is the maximum continuous drain current for SI7107DN-T1-GE3 at 70 °C ambient temperature?
The SI7107DN-T1-GE3 supports -7.8 A continuous drain current at TA = 70 °C with no heatsink, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK® 1212-8 package under natural convection on a 1" × 1" FR4 board. At higher ambient temperatures, current must be further reduced per the thermal resistance curve in the datasheet.
Does SI7107DN-T1-GE3 support 1.8 V logic-level gate drive?
Yes, the SI7107DN-T1-GE3 is explicitly rated for 1.8 V gate drive: its RDS(on) is specified as 0.020 Ω at VGS = -1.8 V and ID = -5 A. The gate threshold voltage range of -0.4 V to -1.0 V ensures strong enhancement with 1.8 V microcontroller outputs, eliminating the need for gate drivers in most portable applications.
What is the thermal resistance from junction to case (RthJC) for SI7107DN-T1-GE3?
The SI7107DN-T1-GE3 has a maximum junction-to-case thermal resistance of 2.4 °C/W under steady-state conditions, with a typical value of 1.9 °C/W. This low RthJC is achieved via the exposed-drain PowerPAK® 1212-8 package, enabling efficient heat transfer directly to the PCB copper layer without requiring additional thermal vias or heatsinks.
Is SI7107DN-T1-GE3 halogen-free and RoHS compliant?
Yes, SI7107DN-T1-GE3 is both halogen-free per IEC 61249-2-21 and compliant with the RoHS Directive 2002/95/EC. The "-GE3" suffix explicitly denotes lead-free and halogen-free construction, verified in Vishay's official documentation (Document Number: 73041, Rev. E).
Can SI7107DN-T1-GE3 be used in synchronous rectification applications?
Yes, the SI7107DN-T1-GE3 can serve as a synchronous rectifier due to its low RDS(on) and integrated body diode with VSD = -0.7 to -1.2 V at IS = -3.2 A. Its fast switching parameters-including 270–400 ns turn-off delay and 160–240 ns fall time-support high-frequency DC-DC converter topologies up to 1 MHz when properly gate-driven.
SI7107DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 9.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 10.8mOhm @ 15.3A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 450µA
- Gate Charge (Qg) (Max) @ Vgs:
- 44 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SI7107DN-T1-GE3 FAQ
1.How can I place an order for SI7107DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7107DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7107DN-T1-GE3 reliable?
The price and inventory of SI7107DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7107DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7107DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7107DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7107DN-T1-GE3?
SI7107DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7107DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7107DN-T1-GE3?
For technical support, including SI7107DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7107DN-T1-GE3 requirements.
6.How does Aetrix verify that SI7107DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7107DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7107DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7107DN-T1-GE3?
All SI7107DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7107DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7107DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7107DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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