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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7108DN-T1-GE3

Name: SI7108DN-T1-GE3
Brand: Vishay Siliconix
SKU: SI7108DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7108DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SI7108DN-T1-GE3.pdf

Description:: MOSFET N-CH 20V 14A PPAK1212-8

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Product details

Overview

SI7108DN-T1-GE3 from Vishay Siliconix is an N-channel 20-V TrenchFET® Gen II Power MOSFET in a PowerPAK® 1212-8 package, delivering R_DS(on) = 4.9 mΩ at V_GS = 10 V and 6.1 mΩ at V_GS = 4.5 V, rated for 22 A continuous drain current (T_J = 150 °C), and optimized for synchronous rectification and point-of-load converters.

For engineers reviewing the SI7108DN-T1-GE3 datasheet, SI7108DN-T1-GE3 pinout, SI7108DN-T1-GE3 application, or SI7108DN-T1-GE3 equivalent, this page provides verified package mapping, thermal resistance data (R_thJC = 1.9 °C/W), gate charge (Q_g = 20–30 nC), diode recovery characteristics (t_rr = 30–60 ns), and validated alternatives for high-efficiency DC/DC power stages.

Technical Context

This MOSFET employs trench-based silicon architecture to achieve ultra-low on-resistance with fast switching performance. Its gate threshold voltage (V_GS(th)) ranges from 1.0 V to 2.0 V, enabling robust turn-on with standard 4.5 V logic-level drive.

The device integrates a low-forward-voltage body diode (V_SD = 0.75–1.2 V at I_S = 3.2 A) and exhibits tightly controlled dynamic parameters: Q_gd = 4.9 nC, t_d(off) = 60–130 ns, and C_iss/C_oss/C_rss values optimized for hard-switched and synchronous rectifier topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage compatible with 12 V input rails and 5 V/3.3 V output stages
R_DS(on) @ 10 V	4.9 mΩ - Enables <1 W conduction loss at 22 A, critical for high-current POL efficiency
R_DS(on) @ 4.5 V	6.1 mΩ - Supports direct drive from 5 V microcontrollers without level-shifting
Q_g	20–30 nC - Low total gate charge reduces driver power and switching losses in high-frequency operation
t_r/t_f	10–15 ns - Fast edge rates minimize transition time losses in PWM and synchronous rectifier modes
R_thJC	1.9 °C/W (typ.) - Enables efficient heat transfer from die to PCB copper, supporting >2 W dissipation with minimal ΔT
t_rr	30–60 ns - Short reverse recovery time reduces shoot-through risk and EMI in synchronous buck converters

Pinout & Package

SI7108DN-T1-GE3 uses the leadless PowerPAK® 1212-8 package (3.30 mm × 3.30 mm, 1.07 mm profile), featuring exposed drain pads on the bottom for low thermal resistance and four drain terminals for current sharing.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Drain (D)	Four parallel drain connections tied to internal die source metallization; must be soldered to large copper pour for thermal and current handling
5	Source (S)	Common source node for channel conduction; electrically isolated from drain pad; used for current sensing and feedback
6	Gate (G)	Control terminal requiring <30 nC charge for full enhancement; sensitive to ESD and layout-induced ringing
7, 8	Source (S)	Additional source terminals providing low-inductance return path and improved current distribution under high dI/dt

Key Features

Feature	Design Value
TrenchFET® Gen II silicon	Delivers 4.9 mΩ R_DS(on) at 10 V in a 3.3 mm × 3.3 mm footprint-enabling higher power density than SO-8 or TSSOP-8 alternatives
PowerPAK® 1212-8 package	1.9 °C/W junction-to-case thermal resistance allows >2× higher power dissipation than TSSOP-8 at same board area
100 % R_g tested	Guarantees gate resistance between 0.7 Ω and 2.1 Ω-critical for predictable gate drive timing and EMI control
Halogen-free & Pb-free	Meets IPC-J-STD-609 Class 1 halogen-free requirements and RoHS Directive 2011/65/EU compliance
Low-profile 1.07 mm height	Enables use in ultra-thin power modules and stacked PCB assemblies where Z-height is constrained to <1.2 mm

Applications

Synchronous Rectification	Point-of-Load Converters
Use Scenario: Secondary-side switch in isolated DC/DC converters (e.g., forward, LLC resonant) operating at 100–500 kHz. IC Role / Device Role / Timing Role: Replaces Schottky diode to reduce conduction loss and improve efficiency by actively controlling body diode conduction and reverse recovery. Use Value: Achieves >95 % efficiency at 20 A output due to 6.1 mΩ R_DS(on) at 4.5 V gate drive and 30 ns t_rr, minimizing dead-time losses.	Use Scenario: High-current buck converter supplying core voltage to FPGAs, ASICs, or GPUs on server motherboards. IC Role / Device Role / Timing Role: High-side or low-side power switch managing 12 V input to 0.8–3.3 V output with 20+ A load current. Use Value: Delivers <1.2 W conduction loss at 22 A (10 V drive) and supports >1 MHz switching via 20 nC Q_g, enabling compact magnetics and reduced output capacitance.
Hot Swap Controllers	Protection Devices
Use Scenario: Inrush current limiting and fault isolation in redundant 12 V power distribution units for telecom and datacom equipment. IC Role / Device Role / Timing Role: Series pass element controlled by hot-swap controller IC to ramp voltage and limit surge during board insertion. Use Value: Withstands 60 A pulsed drain current and 24 mJ single-pulse avalanche energy, enabling robust fault clearing without destruction.	Use Scenario: Overcurrent and short-circuit protection in USB PD, PoE, and industrial I/O modules. IC Role / Device Role / Timing Role: Load switch placed between power source and downstream circuitry to enable/disconnect power under software or hardware control. Use Value: 16 V gate rating and ±100 nA I_GSS ensure stable gate bias during fault conditions; low R_DS(on) minimizes voltage drop during normal operation.

Synchronous Rectification

Point-of-Load Converters

Use Scenario: Secondary-side switch in isolated DC/DC converters (e.g., forward, LLC resonant) operating at 100–500 kHz.

IC Role / Device Role / Timing Role: Replaces Schottky diode to reduce conduction loss and improve efficiency by actively controlling body diode conduction and reverse recovery.

Use Value: Achieves >95 % efficiency at 20 A output due to 6.1 mΩ R_DS(on) at 4.5 V gate drive and 30 ns t_rr, minimizing dead-time losses.

Use Scenario: High-current buck converter supplying core voltage to FPGAs, ASICs, or GPUs on server motherboards.

IC Role / Device Role / Timing Role: High-side or low-side power switch managing 12 V input to 0.8–3.3 V output with 20+ A load current.

Use Value: Delivers <1.2 W conduction loss at 22 A (10 V drive) and supports >1 MHz switching via 20 nC Q_g, enabling compact magnetics and reduced output capacitance.

Hot Swap Controllers

Protection Devices

Use Scenario: Inrush current limiting and fault isolation in redundant 12 V power distribution units for telecom and datacom equipment.

IC Role / Device Role / Timing Role: Series pass element controlled by hot-swap controller IC to ramp voltage and limit surge during board insertion.

Use Value: Withstands 60 A pulsed drain current and 24 mJ single-pulse avalanche energy, enabling robust fault clearing without destruction.

Use Scenario: Overcurrent and short-circuit protection in USB PD, PoE, and industrial I/O modules.

IC Role / Device Role / Timing Role: Load switch placed between power source and downstream circuitry to enable/disconnect power under software or hardware control.

Use Value: 16 V gate rating and ±100 nA I_GSS ensure stable gate bias during fault conditions; low R_DS(on) minimizes voltage drop during normal operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7107DN-T1-GE3	Same PowerPAK 1212-8 package; 20 V V_DS; R_DS(on) = 5.5 mΩ @ 10 V (vs. 4.9 mΩ); Q_g = 22 nC	Slightly higher conduction loss; identical thermal and layout compatibility	Select when marginally lower cost is prioritized over peak efficiency in 20 A+ designs
DMN2020LFG-7	20 V V_DS; R_DS(on) = 5.2 mΩ @ 4.5 V; PowerDI™ 3333 package (3.3 mm × 3.3 mm); R_thJC = 2.5 °C/W	Higher thermal resistance limits power handling; same footprint but different pinout (G-S-D vs. D-D-D-G-S-S-S-S)	Use only if redesigning PCB layout; not drop-in-requires trace rework and thermal validation

Compared with SI7108DN-T1-GE3, Si7107DN-T1-GE3 offers near-identical form/fit/function with minor R_DS(on) trade-off, while DMN2020LFG-7 requires PCB revision due to incompatible pinout and higher thermal impedance-making SI7108DN-T1-GE3 optimal for space-constrained, high-efficiency POL and sync rectifier designs.

Availability

SI7108DN-T1-GE3 is available at Aetrix Electronics and suitable for synchronous rectification, point-of-load converters, and hot-swap protection requiring stable component supply, RoHS/halogen-free compliance, and high-reliability power delivery.

Supply support for SI7108DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The Si7108DN product line belongs to Vishay's TrenchFET® Gen II Power MOSFET family, engineered specifically for high-current, high-frequency DC/DC conversion in computing, telecom, and industrial power systems.

FAQ

What is the maximum continuous drain current rating for SI7108DN-T1-GE3 at 70 °C ambient temperature?

The SI7108DN-T1-GE3 supports 17.6 A continuous drain current at T_A = 70 °C (T_J = 150 °C), per its Absolute Maximum Ratings table. This value accounts for thermal derating based on R_thJA = 65 °C/W (steady state) and assumes adequate PCB copper area for heat spreading. The SI7108DN-T1-GE3 must be mounted on ≥1 in² of 2 oz copper to sustain this current without exceeding junction temperature limits.

Does SI7108DN-T1-GE3 have avalanche capability, and what is its rated single-pulse energy?

Yes, SI7108DN-T1-GE3 is rated for single-pulse avalanche with I_AS = 22 A and E_AS = 24 mJ under L = 1 mH test conditions. This ruggedness enables reliable operation during transient overvoltage events in DC/DC converters and hot-swap circuits. The SI7108DN-T1-GE3 datasheet confirms this rating is guaranteed by design and validated per JEDEC JESD24-11.

What is the gate threshold voltage range for SI7108DN-T1-GE3, and how does it affect logic-level drive compatibility?

The SI7108DN-T1-GE3 has a gate threshold voltage V_GS(th) of 1.0 V to 2.0 V (min to max) at I_D = 250 µA. This low threshold ensures full enhancement with 3.3 V or 5 V logic outputs, making the SI7108DN-T1-GE3 suitable for direct drive from microcontrollers and PWM controllers without external level shifters.

Can SI7108DN-T1-GE3 be used in parallel configurations, and what layout considerations apply?

Yes, SI7108DN-T1-GE3 supports paralleling due to its positive temperature coefficient of R_DS(on), which promotes current sharing. For stable operation, match gate drive loop inductance, use Kelvin-source routing, and ensure symmetrical thermal coupling across devices. The SI7108DN-T1-GE3's four drain terminals and dual source pins simplify balanced PCB layout for multi-phase or redundant power paths.

What reflow profile should be used for SI7108DN-T1-GE3, and is lead-free solder compatible?

SI7108DN-T1-GE3 is qualified for lead-free reflow with a peak temperature of 240 °C (±0 °C tolerance), 20–40 s dwell time above liquidus, and ramp-down ≤6 °C/s. Vishay specifies full compliance with J-STD-020D. The SI7108DN-T1-GE3's PowerPAK® 1212-8 package is designed for standard Pb-free profiles; manual soldering is not recommended due to its leadless construction.

SI7108DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.9mOhm @ 22A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 4.5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SI7108DN-T1-GE3 FAQ

1.How can I place an order for SI7108DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7108DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7108DN-T1-GE3 reliable?

The price and inventory of SI7108DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7108DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI7108DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7108DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7108DN-T1-GE3?

SI7108DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7108DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7108DN-T1-GE3?

For technical support, including SI7108DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7108DN-T1-GE3 requirements.

6.How does Aetrix verify that SI7108DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI7108DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7108DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI7108DN-T1-GE3?

All SI7108DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7108DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7108DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SI7108DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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