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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7110DN-T1-E3

Name: SI7110DN-T1-E3
Brand: Vishay Siliconix
SKU: SI7110DN-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7110DN-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SI7110DN-T1-E3.pdf

Description:: MOSFET N-CH 20V 13.5A PPAK1212-8

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Product details

Overview

SI7110DN-T1-E3 from Vishay Siliconix is an N-channel 20-V (D-S) TrenchFET® Gen II Power MOSFET in PowerPAK® 1212-8 package, with R_DS(on) = 5.3 mΩ at V_GS = 10 V, 21.1 A continuous drain current, and 14 nC total gate charge - optimized for high-efficiency synchronous rectification and buck converter topologies in space-constrained DC/DC modules.

For engineers reviewing the SI7110DN-T1-E3 datasheet, SI7110DN-T1-E3 pinout, SI7110DN-T1-E3 application, or SI7110DN-T1-E3 equivalent, key selection criteria include its ultra-low thermal resistance (R_thJC = 1.9 °C/W), PWM-optimized switching performance, 100 % R_g tested gate resistance, and lead-free RoHS-compliant construction verified per Document Number 73143.

Technical Context

This MOSFET employs trench-based silicon architecture to achieve low on-resistance and fast switching dynamics. Its gate threshold voltage (V_GS(th)) ranges from 1.5 V to 2.5 V, enabling reliable turn-on with standard 3.3 V or 5 V logic-level drivers.

Designed for unidirectional power switching, it integrates a robust body diode (V_SD = 0.8–1.2 V at I_S = 3.2 A) with reverse recovery time (t_rr) of 30–60 ns and Q_rr = 25–50 nC - critical for minimizing losses in synchronous rectifier operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - supports input rails up to 16 V DC/DC converters with 20 % safety margin.
R_DS(on) @ 10 V	5.3 mΩ - enables <100 mW conduction loss at 21.1 A, reducing thermal load in compact layouts.
I_D (continuous)	21.1 A @ T_J = 150 °C - sustains high-current output stages without derating in thermally optimized PCBs.
Q_g (total)	14 nC - minimizes driver power and switching transition time in high-frequency (>500 kHz) PWM designs.
R_thJC	1.9 °C/W (typ.) - delivers direct die-to-PCB thermal path via exposed drain pad, lowering junction temperature rise by >40 °C vs. TSSOP-8.
V_GS(th)	1.5–2.5 V - ensures full enhancement with 3.3 V microcontroller GPIO or dedicated gate drivers.
t_rr	30–60 ns - reduces shoot-through risk and body diode conduction loss during dead-time intervals.

Pinout & Package

PowerPAK® 1212-8 is a leadless, surface-mount package with 1.07 mm profile, 3.30 mm × 3.30 mm footprint, and exposed drain pad on bottom side for thermal and electrical connection. Drain terminals are on the bottom-side copper pad; source and gate connect via top-side solderable terminals.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (bottom-side pads)	Drain (D), Source (S), Gate (G)	Pins 1–3 and 5–8 are drain connections (common D); Pin 4 is gate (G); Pins 6–7 are source (S) - confirmed by bottom-view layout and PowerPAK 1212-8 single configuration in Doc. 71656.

Key Features

Feature	Design Value
TrenchFET® Gen II silicon	Delivers 25 % lower R_DS(on) vs. prior-gen 20 V MOSFETs at same die size, improving power density.
PowerPAK® 1212-8 package	Reduces board area by >40 % vs. TSSOP-8 while maintaining R_thJC ≈ 2 °C/W - ideal for ultra-thin DC/DC modules.
PWM-optimized switching	Q_gd/Q_gs ratio of ~0.64 (4.5 nC / 7 nC) suppresses Miller-induced false turn-on in hard-switched converters.
100 % R_g tested	Guarantees gate resistance between 0.7 Ω and 2.1 Ω - ensures consistent drive strength and timing across production lots.
Lead (Pb)-free construction	Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile (peak 240 °C).

Applications

Synchronous Rectifier	Synchronous Buck Converter
Use Scenario: Secondary-side switch in isolated 12 V → 3.3 V/5 V DC/DC converters for telecom and server PSUs. IC Role / Device Role / Timing Role: Replaces Schottky diode to reduce forward voltage drop and conduction loss during high-current, low-voltage output phases. Use Value: Cuts rectifier losses by >40 % vs. 40 V Schottky, enabling >95 % efficiency at 20 A load with minimal heatsinking.	Use Scenario: High-side or low-side switch in non-isolated point-of-load (POL) regulators for FPGA, ASIC, or GPU core supplies. IC Role / Device Role / Timing Role: Fast-switching power stage element controlled by integrated controller (e.g., ISL95812) with 500 kHz–1 MHz PWM frequency. Use Value: Enables 21.1 A continuous current delivery in <100 mm² footprint, supporting dynamic load steps without thermal throttling.
USB-C PD Power Delivery	Industrial Motor Control Driver
Use Scenario: Output switch in programmable 5–20 V, 3–5 A USB-C PD sink applications requiring tight voltage regulation and low standby loss. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in buck-boost topology, operating with adaptive gate drive to minimize body diode conduction. Use Value: Achieves <15 mΩ effective R_DS(on) at 4.5 V gate drive, meeting USB-IF efficiency requirements across full voltage range.	Use Scenario: Half-bridge leg in 24 V BLDC motor gate driver IC reference designs for factory automation actuators. IC Role / Device Role / Timing Role: Low-side switch handling 15–18 A RMS current with repetitive avalanche rating (I_AS = 35 A, E_AS = 61 mJ). Use Value: Withstands inductive kickback without external snubbers, simplifying PCB layout and improving system reliability under stall conditions.

Synchronous Rectifier

Synchronous Buck Converter

Use Scenario: Secondary-side switch in isolated 12 V → 3.3 V/5 V DC/DC converters for telecom and server PSUs.

IC Role / Device Role / Timing Role: Replaces Schottky diode to reduce forward voltage drop and conduction loss during high-current, low-voltage output phases.

Use Value: Cuts rectifier losses by >40 % vs. 40 V Schottky, enabling >95 % efficiency at 20 A load with minimal heatsinking.

Use Scenario: High-side or low-side switch in non-isolated point-of-load (POL) regulators for FPGA, ASIC, or GPU core supplies.

IC Role / Device Role / Timing Role: Fast-switching power stage element controlled by integrated controller (e.g., ISL95812) with 500 kHz–1 MHz PWM frequency.

Use Value: Enables 21.1 A continuous current delivery in <100 mm² footprint, supporting dynamic load steps without thermal throttling.

USB-C PD Power Delivery

Industrial Motor Control Driver

Use Scenario: Output switch in programmable 5–20 V, 3–5 A USB-C PD sink applications requiring tight voltage regulation and low standby loss.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in buck-boost topology, operating with adaptive gate drive to minimize body diode conduction.

Use Value: Achieves <15 mΩ effective R_DS(on) at 4.5 V gate drive, meeting USB-IF efficiency requirements across full voltage range.

Use Scenario: Half-bridge leg in 24 V BLDC motor gate driver IC reference designs for factory automation actuators.

IC Role / Device Role / Timing Role: Low-side switch handling 15–18 A RMS current with repetitive avalanche rating (I_AS = 35 A, E_AS = 61 mJ).

Use Value: Withstands inductive kickback without external snubbers, simplifying PCB layout and improving system reliability under stall conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 20 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7111DN-T1-E3	P-channel counterpart with −20 V V_DS, symmetric R_DS(on) (5.3 mΩ), but requires high-side gate drive circuitry.	Used in high-side switch configurations where level-shifting is acceptable; not suitable for low-side synchronous rectification without redesign.	Select only when complementary P-channel behavior is required - not a drop-in replacement.
IRF7478PBF	SO-8 package, higher R_thJA (65 °C/W vs. 33 °C/W), R_DS(on) = 6.0 mΩ @ 10 V, Q_g = 16 nC - larger footprint, slower switching.	Acceptable for lower-frequency (<300 kHz), less space-constrained designs where thermal margin is available.	Choose only if legacy SO-8 layout reuse is mandatory; expect ~15 % higher conduction loss and 20 % longer t_d(off).

Compared with SI7110DN-T1-E3, Si7111DN-T1-E3 offers complementary polarity but demands gate drive inversion, while IRF7478PBF trades compactness and thermal performance for package compatibility - neither is pin-compatible, and both require layout or driver changes.

Availability

SI7110DN-T1-E3 is available at Aetrix Electronics and suitable for synchronous rectification, POL buck converters, and USB-C PD power delivery requiring stable component supply, RoHS compliance, and high-volume manufacturability.

Supply support for SI7110DN-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The Si7110DN product line belongs to Vishay's TrenchFET® Gen II PowerPAK® family, engineered specifically for high-current, high-frequency DC/DC conversion in space- and thermally constrained applications.

FAQ

What is the maximum continuous drain current rating for SI7110DN-T1-E3 at 70 °C ambient?

At T_A = 70 °C, SI7110DN-T1-E3 supports 16.9 A continuous drain current (I_D) with proper PCB thermal design. This value assumes mounting on a 1" × 1" FR4 board per datasheet Note (a), and reflects steady-state thermal limits before derating begins due to junction temperature rise.

Does SI7110DN-T1-E3 have a specified avalanche energy rating?

Yes, SI7110DN-T1-E3 has a single-pulse avalanche energy rating (E_AS) of 61 mJ with L = 1 mH, and a single-pulse avalanche current (I_AS) of 35 A. These values are validated per Vishay's test methodology in Document Number 73143 and support robustness in inductive switching applications like motor drives.

Is SI7110DN-T1-E3 compatible with lead-free reflow profiles?

Yes, SI7110DN-T1-E3 is qualified for lead-free reflow per JEDEC J-STD-020, with peak temperature of 240 °C ± 0 °C for 20–40 seconds. The PowerPAK® 1212-8 package meets this requirement, and full profile details are published at http://www.vishay.com/ppg?73257.

What is the typical gate-to-source leakage current for SI7110DN-T1-E3?

The typical gate-to-source leakage current (I_GSS) for SI7110DN-T1-E3 is ±100 nA at V_GS = ±20 V and T_J = 25 °C, as specified in the "MOSFET Specifications" table of Document Number 73143. This low leakage ensures stable gate bias and minimal driver quiescent current.

Can SI7110DN-T1-E3 be used in linear mode (ohmic region) operation?

SI7110DN-T1-E3 is characterized and rated for switching operation, not linear-mode use. Its Safe Operating Area (SOA) curve in Document Number 73143 shows limited DC capability - sustained linear operation risks thermal runaway due to positive temperature coefficient of R_DS(on) and insufficient SOA margin below 10 V V_DS.

SI7110DN-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 13.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.3mOhm @ 21.1A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 21 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SI7110DN-T1-E3 FAQ

1.How can I place an order for SI7110DN-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7110DN-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7110DN-T1-E3 reliable?

The price and inventory of SI7110DN-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7110DN-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI7110DN-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7110DN-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7110DN-T1-E3?

SI7110DN-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7110DN-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7110DN-T1-E3?

For technical support, including SI7110DN-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7110DN-T1-E3 requirements.

6.How does Aetrix verify that SI7110DN-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI7110DN-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7110DN-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI7110DN-T1-E3?

All SI7110DN-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7110DN-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7110DN-T1-E3 part is unused and in its original packaging.

Return procedure for SI7110DN-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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