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Vishay Siliconix SI7112DN-T1-E3
- Part No.:
- SI7112DN-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SI7112DN-T1-E3.pdf
- Description:
- MOSFET N-CH 30V 11.3A PPAK1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:2,700
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Product details
Overview
SI7112DN-T1-E3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Power MOSFET in a lead-free PowerPAK® 1212-8 package, delivering RDS(on) = 7.5 mΩ at VGS = 10 V and 8.2 mΩ at VGS = 4.5 V, with continuous drain current up to 17.8 A at TJ = 150 °C. It serves as a high-efficiency synchronous rectifier switch in DC/DC converters.
For engineers reviewing the SI7112DN-T1-E3 datasheet, SI7112DN-T1-E3 pinout, SI7112DN-T1-E3 application, or SI7112DN-T1-E3 equivalent, key selection criteria include its ultra-low thermal resistance (RthJC = 2.4 °C/W), 100 % Rg tested gate, and halogen-free compliance per IEC 61249-2-21 - critical for compact, thermally constrained power stages.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for fast switching and low conduction loss. Its PowerPAK 1212-8 package features an exposed copper drain pad on the bottom side, enabling direct thermal coupling to PCB copper planes and achieving RthJC as low as 2.4 °C/W.
The device supports logic-level gate drive (VGS(th) = 0.6–1.5 V) and exhibits Qg = 18–27 nC at VGS = 4.5 V, with Ciss = 2610 pF and Crss = 145 pF - parameters tightly aligned with high-frequency synchronous buck converter operation at 500 kHz–1 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - maximum blocking voltage suitable for 12 V and 24 V input DC/DC systems |
| RDS(on) @ 10 V | 7.5 mΩ - enables <1.3 W conduction loss at 17.8 A, reducing thermal load in high-current paths |
| RDS(on) @ 4.5 V | 8.2 mΩ - ensures robust performance with 5 V or 4.5 V gate drive, supporting controller ICs without level shifters |
| ID (continuous) | 17.8 A at TJ = 150 °C - supports high-current output rails in server VRMs and telecom POL modules |
| Qg | 18–27 nC - balances switching speed and gate driver stress for efficient 500 kHz–1 MHz operation |
| RthJC | 2.4 °C/W (max) - allows >2 W dissipation with only ~5 °C rise above PCB temperature, simplifying thermal design |
| Ciss | 2610 pF - defines input capacitance seen by gate driver; impacts turn-on timing and Miller plateau duration |
Pinout & Package
SI7112DN-T1-E3 is housed in a surface-mount PowerPAK® 1212-8 package (3.30 mm × 3.30 mm, 1.07 mm profile), featuring an exposed drain pad on the bottom side for enhanced thermal conduction. The top-side terminals are arranged in an 8-pin configuration with three source pins, one gate pin, and four drain pins.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 (S) | Source | Common source connection for internal parallel die; low-inductance return path for high di/dt currents |
| 4 (G) | Gate | Single gate input terminal; requires controlled slew rate to minimize EMI during switching transitions |
| 5, 6, 7, 8 (D) | Drain | Four paralleled drain terminals tied to bottom-side exposed copper pad; primary thermal and high-current path to PCB |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables sub-10 mΩ RDS(on) in 3.3 mm × 3.3 mm footprint, optimizing power density over SO-8 or TSSOP-8 |
| PowerPAK® 1212-8 package | Delivers RthJC = 2.4 °C/W - 20× better than TSSOP-8 - enabling higher current without heatsinks |
| 100 % Rg tested | Guarantees gate resistance between 0.5–1.8 Ω, ensuring consistent switching behavior across production lots |
| Halogen-free construction | Complies with IEC 61249-2-21, supporting environmental requirements for industrial and telecom end equipment |
| RoHS-compliant (Pb-free) | Meets Directive 2002/95/EC; termination finish is matte tin over nickel, qualified for reflow up to 260 °C peak |
Applications
| Synchronous Buck Converter | OR-ing Circuit |
|---|---|
|
Use Scenario: High-efficiency 12 V-to-1.2 V step-down conversion in server CPU VRMs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; switched at 600 kHz with 5 V gate drive. Use Value: Reduces conduction loss by >60 % vs. 40 V Schottky, lowering junction temperature rise to <5 °C above PCB. |
Use Scenario: Redundant 48 V power supply backplane with automatic fault isolation. IC Role / Device Role / Timing Role: Active OR-ing switch controlling current flow direction; body diode provides reverse-blocking during fault. Use Value: Enables <100 µs fault response via gate control, eliminating reverse current and thermal runaway in failed supplies. |
| Hot-Swap Controller Interface | USB PD Power Path |
|
Use Scenario: Inrush-limited insertion of 24 V blade servers into live backplanes. IC Role / Device Role / Timing Role: Main pass FET in hot-swap controller circuit; driven with soft-start gate ramp. Use Value: With RDS(on) = 7.5 mΩ, limits inrush power dissipation to <1.5 W during 10 ms ramp, avoiding thermal shutdown. |
Use Scenario: 20 V/5 A USB Power Delivery power path in portable docking stations. IC Role / Device Role / Timing Role: Load switch managing VBUS delivery; controlled by PD controller GPIO. Use Value: Low RDS(on) minimizes voltage drop (<100 mV at 5 A), preserving PD negotiation margin and maintaining 20 V ±5 % regulation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7110DN-T1-E3 | RDS(on) = 9.5 mΩ @ 10 V; lower ID rating (15.5 A); same PowerPAK 1212-8 package and pinout | Suitable for <15 A loads where marginally higher conduction loss is acceptable | Select when thermal budget allows +0.3 W loss at full load and cost sensitivity outweighs efficiency gain |
| IRF7470PBF | SO-8 package; RDS(on) = 8.0 mΩ @ 10 V; RthJC = 20 °C/W - 8× higher thermal resistance | Requires larger PCB copper area or heatsink for equivalent power handling | Choose only if legacy SO-8 layout reuse is mandatory and thermal derating to ≤8 A is acceptable |
Compared with SI7112DN-T1-E3, Si7110DN-T1-E3 offers identical form factor but trades 13 % higher RDS(on) for cost reduction, while IRF7470PBF sacrifices thermal performance for package compatibility - making SI7112DN-T1-E3 optimal for space- and thermally constrained high-current designs.
Availability
SI7112DN-T1-E3 is available at Aetrix Electronics and suitable for synchronous rectification, OR-ing circuits, and hot-swap power management requiring stable component supply, RoHS/halogen-free compliance, and high power density.
Supply support for SI7112DN-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SI7112DN-T1-E3 belongs to Vishay's TrenchFET® PowerPAK® family, engineered specifically for high-current, high-frequency DC/DC conversion where minimal RDS(on) and ultra-low thermal resistance are critical.
FAQ
What is the maximum continuous drain current for SI7112DN-T1-E3 at 70 °C case temperature?
The maximum continuous drain current for SI7112DN-T1-E3 is 14.2 A at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and must be validated against actual board layout and copper area in the target application.
Does SI7112DN-T1-E3 support 3.3 V gate drive in practical operation?
SI7112DN-T1-E3 has a gate threshold voltage range of 0.6–1.5 V, but its RDS(on) is not characterized below VGS = 4.5 V. At 3.3 V gate drive, the device will conduct but with significantly increased on-resistance - likely >20 mΩ - resulting in excessive conduction loss and thermal risk. It is not recommended for 3.3 V-only gate drive.
What is the significance of "100 % Rg tested" for SI7112DN-T1-E3?
"100 % Rg tested" means every SI7112DN-T1-E3 unit undergoes production testing to verify gate resistance falls within 0.5–1.8 Ω. This ensures consistent gate charging behavior, predictable switching times, and reliable gate driver sizing - critical for EMI control and system stability in high-frequency power converters.
Can SI7112DN-T1-E3 be used in avalanche energy applications?
Yes - SI7112DN-T1-E3 is rated for single-pulse avalanche energy (EAS) of 20 mJ and single-pulse avalanche current (IAS) of 20 A, with L = 0.1 mH. These ratings apply under defined test conditions and support limited unclamped inductive switching events, but sustained avalanche operation is not recommended.
What soldering profile should be used for SI7112DN-T1-E3?
SI7112DN-T1-E3 requires lead-free reflow per Vishay document 73257: peak temperature of 240–245 °C for 20–40 seconds, with time above 180 °C limited to 70–180 seconds. Manual soldering with an iron is not recommended due to its leadless PowerPAK® 1212-8 construction and thermal sensitivity.
SI7112DN-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 11.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 7.5mOhm @ 17.8A, 10V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 27 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2610 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.5W (Ta)
- Operating Temperature:
- -50°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SI7112DN-T1-E3 FAQ
1.How can I place an order for SI7112DN-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7112DN-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7112DN-T1-E3 reliable?
The price and inventory of SI7112DN-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7112DN-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI7112DN-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7112DN-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7112DN-T1-E3?
SI7112DN-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7112DN-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7112DN-T1-E3?
For technical support, including SI7112DN-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7112DN-T1-E3 requirements.
6.How does Aetrix verify that SI7112DN-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI7112DN-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7112DN-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI7112DN-T1-E3?
All SI7112DN-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7112DN-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7112DN-T1-E3 part is unused and in its original packaging.
Return procedure for SI7112DN-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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