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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7112DN-T1-GE3

Name: SI7112DN-T1-GE3
Brand: Vishay Siliconix
SKU: SI7112DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7112DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SI7112DN-T1-GE3.pdf

Description:: MOSFET N-CH 30V 11.3A PPAK1212-8

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Product details

Overview

SI7112DN-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Power MOSFET in a lead-free and halogen-free PowerPAK® 1212-8 package, delivering R_DS(on) = 7.5 mΩ at V_GS = 10 V and 8.2 mΩ at V_GS = 4.5 V, rated for 17.8 A continuous drain current, and optimized for high-efficiency synchronous rectification in DC/DC converters.

For engineers reviewing the SI7112DN-T1-GE3 datasheet, SI7112DN-T1-GE3 pinout, SI7112DN-T1-GE3 application, or SI7112DN-T1-GE3 equivalent, key selection criteria include its ultra-low thermal resistance (R_thJC = 2.4 °C/W), 100 % R_g tested gate, fast switching performance (Q_g = 27 nC), and compatibility with 4.5 V logic-level drive in space-constrained power stages.

Technical Context

This N-channel MOSFET employs trench-gate silicon technology to achieve low on-resistance and high transconductance (g_fs = 97 S), enabling efficient power switching in high-frequency synchronous buck converters. Its PowerPAK 1212-8 package features an exposed drain pad for direct thermal conduction to the PCB, minimizing junction-to-case thermal resistance.

The device supports gate drive voltages from 4.5 V to 10 V, with guaranteed V_GS(th) between 0.6 V and 1.5 V, and integrates a robust body diode (V_SD = 1.2 V at I_S = 3.2 A) with trr = 60 ns and Q_rr = 18 nC - critical for minimizing reverse recovery losses in synchronous rectifier topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; suitable for 24 V input systems and 12 V output rails with margin.
R_DS(on) @ 10 V	7.5 mΩ - Enables <1 W conduction loss at 17.8 A, reducing heat generation in high-current power stages.
R_DS(on) @ 4.5 V	8.2 mΩ - Ensures full enhancement with standard 5 V logic or controller outputs without level-shifting.
I_D (continuous)	17.8 A at T_J = 150 °C - Supports high-current loads when mounted on 1" × 1" FR4 with adequate copper area.
Q_g	27 nC - Low total gate charge enables fast turn-on/off with minimal driver power, supporting >1 MHz switching.
R_thJC	2.4 °C/W - Ultra-low junction-to-case thermal resistance allows efficient heat transfer to PCB ground plane.
C_iss	2610 pF - Input capacitance impacts gate drive requirements and EMI filtering design in high-speed layouts.

Pinout & Package

SI7112DN-T1-GE3 is housed in the PowerPAK® 1212-8 surface-mount package - a leadless, low-profile (1.07 mm max) package with exposed drain terminals on the bottom side for enhanced thermal dissipation. The package footprint measures 3.30 mm × 3.30 mm and uses a single-die configuration with eight terminals arranged in a dual-row layout.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source connections reduce source inductance and improve current sharing in high-di/dt applications.
5	Gate (G)	Single gate terminal; requires low-inductance routing to minimize ringing and ensure stable switching.
6, 7, 8	Drain (D)	Three parallel drain terminals connected to the exposed bottom pad - primary thermal and current path to PCB.

Key Features

Feature	Design Value
TrenchFET® technology	Delivers industry-leading R_DS(on) × area efficiency, enabling smaller die size without sacrificing conduction loss.
PowerPAK® 1212-8 package	Provides 20× lower R_thJA than TSSOP-8 and 10× better thermal performance than SO-8 for same-board-area mounting.
100 % R_g tested	Ensures consistent gate resistance (0.5–1.8 Ω), critical for predictable switching timing and EMI control.
Halogen-free & RoHS-compliant	Fulfills IEC 61249-2-21 and Directive 2002/95/EC requirements for environmentally sensitive end equipment.
Low-profile 1.07 mm height	Enables use in ultra-thin power modules and portable electronics where Z-height is constrained.

Applications

Server VRM	USB-C PD Adapter
Use Scenario: High-density 48 V–12 V intermediate bus converter in rack-mounted servers. IC Role / Device Role / Timing Role: Synchronous rectifier switch in secondary-side synchronous buck stage. Use Value: 7.5 mΩ R_DS(on) reduces conduction loss by >30 % vs. comparable TSSOP-8 MOSFETs, improving system efficiency at 40 A load.	Use Scenario: 100 W USB-C Power Delivery adapter with 5–20 V programmable output. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in LLC + SR hybrid topology. Use Value: Fast trr (60 ns) and low Q_rr (18 nC) minimize body diode conduction loss during dead-time, increasing light-load efficiency.
Industrial PLC I/O Module	Automotive ADAS Camera Power
Use Scenario: 24 V input DC/DC supply powering isolated analog I/O channels in programmable logic controllers. IC Role / Device Role / Timing Role: Primary-side high-side switch in compact flyback or active clamp forward converter. Use Value: 30 V V_DS rating accommodates 24 V nominal input with 30 % transient margin; R_thJC = 2.4 °C/W maintains TJ < 125 °C under full load.	Use Scenario: Compact 5 V/3 A power rail for image sensor and ISP in automotive surround-view camera module. IC Role / Device Role / Timing Role: Synchronous rectifier in miniature buck converter operating at 500 kHz–1 MHz. Use Value: PowerPAK 1212-8's 3.3 mm × 3.3 mm footprint fits tight board areas; 4.5 V drive compatibility simplifies controller interface.

Server VRM

USB-C PD Adapter

Use Scenario: High-density 48 V–12 V intermediate bus converter in rack-mounted servers.

IC Role / Device Role / Timing Role: Synchronous rectifier switch in secondary-side synchronous buck stage.

Use Value: 7.5 mΩ R_DS(on) reduces conduction loss by >30 % vs. comparable TSSOP-8 MOSFETs, improving system efficiency at 40 A load.

Use Scenario: 100 W USB-C Power Delivery adapter with 5–20 V programmable output.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in LLC + SR hybrid topology.

Use Value: Fast trr (60 ns) and low Q_rr (18 nC) minimize body diode conduction loss during dead-time, increasing light-load efficiency.

Industrial PLC I/O Module

Automotive ADAS Camera Power

Use Scenario: 24 V input DC/DC supply powering isolated analog I/O channels in programmable logic controllers.

IC Role / Device Role / Timing Role: Primary-side high-side switch in compact flyback or active clamp forward converter.

Use Value: 30 V V_DS rating accommodates 24 V nominal input with 30 % transient margin; R_thJC = 2.4 °C/W maintains TJ < 125 °C under full load.

Use Scenario: Compact 5 V/3 A power rail for image sensor and ISP in automotive surround-view camera module.

IC Role / Device Role / Timing Role: Synchronous rectifier in miniature buck converter operating at 500 kHz–1 MHz.

Use Value: PowerPAK 1212-8's 3.3 mm × 3.3 mm footprint fits tight board areas; 4.5 V drive compatibility simplifies controller interface.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7111DN-T1-GE3	Same PowerPAK 1212-8 package, but 20 V V_DS, 5.5 mΩ @ 4.5 V, 20 A ID - lower voltage rating, higher current capability.	Restricted to ≤20 V input systems; unsuitable for 24 V industrial or 30 V automotive inputs.	Select only if system V_IN ≤ 16 V and lowest possible R_DS(on) at 4.5 V is prioritized over voltage margin.
DMN3016LFG-7	30 V, 16 A, 7.5 mΩ @ 10 V in 2 mm × 2 mm WDFN package; R_thJC = 3.5 °C/W - larger thermal resistance, smaller footprint.	Higher thermal impedance limits power handling on small PCBs; no 4.5 V R_DS(on) spec provided.	Prefer when board area is more constrained than thermal budget; verify gate drive compatibility at 4.5 V.

Compared with SI7112DN-T1-GE3, Si7111DN-T1-GE3 trades voltage headroom for lower on-resistance in low-voltage systems, while DMN3016LFG-7 offers a smaller footprint at the cost of reduced thermal performance and unverified 4.5 V drive capability - making SI7112DN-T1-GE3 the balanced choice for 24 V synchronous rectifiers requiring both margin and efficiency.

Availability

SI7112DN-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, USB-C PD adapters, and industrial PLC power supplies requiring stable component supply, halogen-free compliance, and high-reliability thermal performance in compact footprints.

Supply support for SI7112DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SI7112DN-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK® family, engineered specifically for high-current, high-frequency DC/DC conversion in space- and thermally-constrained applications.

FAQ

What is the maximum continuous drain current for SI7112DN-T1-GE3 at 70 °C case temperature?

The SI7112DN-T1-GE3 supports 14.2 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This value assumes surface mounting on a 1" × 1" FR4 board with adequate copper pour on the drain pad to maintain thermal integrity. Derating applies above this temperature per the steady-state power dissipation curve.

Does SI7112DN-T1-GE3 support 3.3 V gate drive?

No - SI7112DN-T1-GE3 is not characterized for full enhancement at 3.3 V gate drive. Its R_DS(on) is specified at V_GS = 4.5 V (8.2 mΩ) and 10 V (7.5 mΩ), and V_GS(th) ranges from 0.6 V to 1.5 V. At 3.3 V, the device operates in linear region with significantly elevated R_DS(on); use only with ≥4.5 V logic-compatible drivers.

Is SI7112DN-T1-GE3 suitable for synchronous rectification in LLC resonant converters?

Yes - SI7112DN-T1-GE3 is explicitly recommended for synchronous rectification applications, including LLC topologies. Its fast body diode (t_rr = 60 ns, Q_rr = 18 nC), low gate charge (27 nC), and 4.5 V drive capability enable precise timing control and reduced reverse recovery loss during zero-voltage switching transitions.

What is the thermal resistance from junction to ambient for SI7112DN-T1-GE3 under steady-state conditions?

The steady-state junction-to-ambient thermal resistance (R_thJA) for SI7112DN-T1-GE3 is 65 °C/W (typical) and 81 °C/W (maximum) when mounted on a 1" × 1" FR4 board. This value assumes standard JEDEC test conditions; actual performance improves significantly with added PCB copper area or multilayer thermal planes.

How does the PowerPAK 1212-8 package of SI7112DN-T1-GE3 compare thermally to SO-8 packages?

The PowerPAK 1212-8 package delivers R_thJC = 2.4 °C/W - over 8× lower than typical SO-8 MOSFETs (~20 °C/W) and ~10× better than TSSOP-8 (~25 °C/W). This enables SI7112DN-T1-GE3 to run up to 40 °C cooler than SO-8 equivalents under identical 2 W dissipation, directly preserving R_DS(on) and reliability.

SI7112DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 11.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7.5mOhm @ 17.8A, 10V

Vgs(th) (Max) @ Id:: 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 2610 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta)

Operating Temperature:: -50°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SI7112DN-T1-GE3 FAQ

1.How can I place an order for SI7112DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7112DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7112DN-T1-GE3 reliable?

The price and inventory of SI7112DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7112DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI7112DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7112DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7112DN-T1-GE3?

SI7112DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7112DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7112DN-T1-GE3?

For technical support, including SI7112DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7112DN-T1-GE3 requirements.

6.How does Aetrix verify that SI7112DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI7112DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7112DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI7112DN-T1-GE3?

All SI7112DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7112DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7112DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SI7112DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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