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Vishay Siliconix SI7114ADN-T1-GE3
- Part No.:
- SI7114ADN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SI7114ADN-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 35A PPAK 1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:20,676
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Product details
Overview
SI7114ADN-T1-GE3 from Vishay Siliconix is a N-channel 30 V (D-S) TrenchFET® power MOSFET in PowerPAK® 1212-8 package, delivering RDS(on) = 7.5 mΩ at VGS = 10 V and 9.8 mΩ at VGS = 4.5 V, with 35 A continuous drain current (TJ = 150 °C), optimized for high-efficiency synchronous rectification in DC/DC converters.
For engineers reviewing the SI7114ADN-T1-GE3 datasheet, SI7114ADN-T1-GE3 pinout, SI7114ADN-T1-GE3 application, or SI7114ADN-T1-GE3 equivalent, key selection criteria include low RDS(on) at 4.5 V gate drive, ultra-low thermal resistance (RthJC = 2.4 °C/W), robust avalanche energy rating (EAS = 45 mJ), and leadless PowerPAK 1212-8 footprint compatibility with space-constrained PCB layouts.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve high channel density and low on-resistance while maintaining fast switching performance: Qg = 10.2 nC (at VGS = 4.5 V), tr = 14 ns, and tf = 10 ns under standard test conditions. Its body diode exhibits VSD = 0.8–1.2 V at IS = 10 A and trr = 24–36 ns, supporting efficient reverse recovery in synchronous buck topologies.
The device operates across –55 °C to +150 °C junction temperature range and is 100 % Rg and UIS tested per production screening. Thermal design leverages the exposed drain pad of the PowerPAK 1212-8 package, enabling direct heat conduction to PCB copper - achieving RthJA = 26 °C/W (t ≤ 10 s) on 1" × 1" FR4 board.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage; defines safe operating range in 24 V input systems. |
| RDS(on) @ VGS = 4.5 V | 9.8 mΩ - Enables efficient operation with 5 V or logic-level gate drivers without external level shifting. |
| ID (continuous) | 35 A @ TC = 25 °C - Sustains high current in thermally managed designs such as VRMs and POL converters. |
| Qg (typ.) | 10.2 nC @ VGS = 4.5 V - Low gate charge reduces driver loss and enables high-frequency switching up to 1 MHz. |
| RthJC | 2.4 °C/W (max) - Ultra-low junction-to-case thermal resistance allows >30 W power dissipation with minimal heatsinking. |
| EAS | 45 mJ - Robust single-pulse avalanche capability supports reliable operation during transient overvoltage events. |
| VGS(th) | 1.2–2.5 V - Tight threshold range ensures predictable turn-on behavior across temperature and process variation. |
Pinout & Package
Package: PowerPAK® 1212-8 (leadless, 3.3 mm × 3.3 mm × 1.05 mm), featuring an exposed drain pad on the bottom side for optimal thermal conduction to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications. |
| 5, 6, 7, 8 | Drain (D) | Four drain terminals connected to the large bottom-side exposed pad - primary thermal and current path to PCB. |
| 4 (top-side center) | Gate (G) | Single gate terminal located centrally for symmetric layout; requires controlled impedance routing to minimize ringing. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Enables 7.5 mΩ RDS(on) at 10 V in 3.3 mm × 3.3 mm footprint - 2× die area vs. TSOP-6 with 40 % smaller area than TSSOP-8. |
| 100 % Rg and UIS tested | Guarantees gate resistance consistency and ruggedness against unclamped inductive switching stress in real-world loads. |
| PowerPAK 1212-8 package | Exposes drain pad directly to PCB - achieves RthJC = 2.4 °C/W, reducing junction temperature rise by >40 °C vs. TSSOP-8 at 2 W dissipation. |
| Low Qgd/Qgs ratio | Qgd = 3.2 nC, Qgs = 3.9 nC - improves Miller immunity and enables stable operation with moderate gate resistors in hard-switched converters. |
| Enhanced body diode | VSD = 0.8–1.2 V and trr = 24–36 ns - minimizes reverse recovery loss and cross-conduction risk in synchronous rectification. |
Applications
| Server VRM Output Stage | Industrial DC/DC Converter |
|---|---|
|
Use Scenario: High-current, high-efficiency 12 V → 1.2 V point-of-load conversion in dual-processor server motherboards. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter, switching at 500 kHz–1 MHz. Use Value: 9.8 mΩ RDS(on) at 4.5 V gate drive eliminates need for gate driver boost, reducing BOM count and layout complexity. |
Use Scenario: Isolated 48 V → 12 V telecom or industrial power supply with tight thermal constraints. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp forward topology. Use Value: 45 mJ EAS withstands transformer leakage energy spikes; low Coss = 275 pF minimizes turn-off loss at high frequency. |
| USB-C PD Fast Charging | Automotive ADAS Power Module |
|
Use Scenario: 20 V–28 V input, 5–20 V programmable output USB-C Power Delivery adapter with GaN primary. IC Role / Device Role / Timing Role: High-side or low-side switch in synchronous rectification stage, driven by dedicated controller. Use Value: 35 A ID rating supports 100 W+ output; PowerPAK 1212-8's 1.05 mm height fits slim portable enclosures. |
Use Scenario: 12 V battery-fed power module supplying radar, camera, and sensor clusters in ADAS ECUs. IC Role / Device Role / Timing Role: Load switch and reverse polarity protection element with integrated body diode functionality. Use Value: –55 °C to +150 °C operating range meets AEC-Q101 requirements; 100 % UIS testing validates reliability under load dump transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR872DP-T1-GE3 | RDS(on) = 5.2 mΩ @ 10 V, but 12.5 mΩ @ 4.5 V; larger PowerPAK 5x6 package (5.0 mm × 6.0 mm). | Better conduction loss at 10 V drive; unsuitable for space-constrained 1212 layouts due to 3.7× larger footprint. | Select when higher current (>50 A) and lower RDS(on) at 10 V outweigh size constraints. |
| IRLHS6342TRPBF | RDS(on) = 10.5 mΩ @ 4.5 V; SO-8 package with RthJC = 20 °C/W - 8× worse thermal resistance than SI7114ADN-T1-GE3. | Limited to <10 W dissipation without heatsink; incompatible with high-density thermal management schemes. | Choose only for legacy SO-8 board reuse where PowerPAK rework is not feasible. |
Compared with SiR872DP-T1-GE3 and IRLHS6342TRPBF, SI7114ADN-T1-GE3 uniquely balances sub-10 mΩ RDS(on) at 4.5 V, ultra-compact 3.3 mm × 3.3 mm footprint, and industry-leading 2.4 °C/W thermal resistance - making it optimal for next-generation high-power-density DC/DC designs where board area and thermal headroom are critical.
Availability
SI7114ADN-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, USB-C PD adapters, and automotive ADAS power modules requiring stable component supply and long-term manufacturability.
Supply support for SI7114ADN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on efficiency, reliability, and miniaturization.
The SI7114ADN-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK® family, engineered specifically for high-current, high-frequency power conversion in space- and thermally-constrained applications.
FAQ
What is the maximum continuous drain current rating for SI7114ADN-T1-GE3 at 70 °C case temperature?
The SI7114ADN-T1-GE3 supports 35 A continuous drain current at TC = 70 °C, as specified in its Absolute Maximum Ratings table. This rating reflects the device's ability to sustain high current under thermally managed conditions - such as with adequate PCB copper pour - without exceeding the 150 °C maximum junction temperature limit. The SI7114ADN-T1-GE3 maintains this rating across its full operating temperature range due to its low RthJC of 2.4 °C/W.
Does SI7114ADN-T1-GE3 support logic-level gate drive, and what is its RDS(on) at 4.5 V?
Yes, SI7114ADN-T1-GE3 is fully logic-level compatible: its RDS(on) is guaranteed at 9.8 mΩ max at VGS = 4.5 V and ID = 16 A. This enables direct drive from microcontrollers, PWM controllers, and gate drivers operating at 5 V or 4.5 V, eliminating the need for gate voltage boosting circuitry. The SI7114ADN-T1-GE3 achieves this performance using TrenchFET® silicon architecture optimized for low-threshold, high-conductivity operation.
What is the thermal resistance from junction to ambient (RthJA) for SI7114ADN-T1-GE3 on a standard PCB?
The SI7114ADN-T1-GE3 has a maximum RthJA of 34 °C/W under steady-state conditions on a 1" × 1" FR4 board (per datasheet Note b). For short-duration pulses (t ≤ 10 s), the typical RthJA is 26 °C/W. These values reflect the superior thermal performance enabled by the PowerPAK 1212-8's exposed drain pad - which conducts heat directly into PCB copper. The SI7114ADN-T1-GE3's RthJA is significantly lower than conventional SO-8 or TSSOP-8 packages.
Is SI7114ADN-T1-GE3 suitable for synchronous rectification, and what body diode characteristics does it offer?
Yes, SI7114ADN-T1-GE3 is explicitly designed for synchronous rectification applications. Its body diode features VSD = 0.8–1.2 V at IS = 10 A and reverse recovery time trr = 24–36 ns, enabling low-loss commutation in buck and forward converters. The SI7114ADN-T1-GE3 also delivers Qrr = 20–30 nC, minimizing stored charge and associated switching losses. These parameters are validated across temperature and match the requirements of modern high-frequency synchronous rectifier controllers.
What is the gate charge profile of SI7114ADN-T1-GE3, and how does it impact switching efficiency?
The SI7114ADN-T1-GE3 has a total gate charge Qg of 10.2 nC (typ.) at VGS = 4.5 V and VDS = 15 V, with Qgs = 3.9 nC and Qgd = 3.2 nC. This low, well-balanced charge profile reduces gate driver power loss and enables clean, fast switching transitions - tr = 14 ns and tf = 10 ns - even with modest 1 Ω gate resistors. As a result, the SI7114ADN-T1-GE3 maintains high efficiency in 500 kHz–1 MHz DC/DC converters where switching loss dominates.
SI7114ADN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 7.5mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 32 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1230 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.7W (Ta), 39W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SI7114ADN-T1-GE3 FAQ
1.How can I place an order for SI7114ADN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7114ADN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7114ADN-T1-GE3 reliable?
The price and inventory of SI7114ADN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7114ADN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7114ADN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7114ADN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7114ADN-T1-GE3?
SI7114ADN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7114ADN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7114ADN-T1-GE3?
For technical support, including SI7114ADN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7114ADN-T1-GE3 requirements.
6.How does Aetrix verify that SI7114ADN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7114ADN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7114ADN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7114ADN-T1-GE3?
All SI7114ADN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7114ADN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7114ADN-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7114ADN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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