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Vishay Siliconix SI7114DN-T1-GE3
- Part No.:
- SI7114DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SI7114DN-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 11.7A PPAK1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:7,774
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Product details
Overview
SI7114DN-T1-GE3 from Vishay Siliconix is a N-channel 30-V (D-S) TrenchFET® Gen II Power MOSFET in PowerPAK® 1212-8 package, delivering RDS(on) = 7.5 mΩ at VGS = 10 V and 10 mΩ at VGS = 4.5 V, with 18.3 A continuous drain current and 12.5 nC total gate charge - optimized for high-efficiency synchronous rectification in DC/DC converters.
For engineers reviewing the SI7114DN-T1-GE3 datasheet, SI7114DN-T1-GE3 pinout, SI7114DN-T1-GE3 application, or SI7114DN-T1-GE3 equivalent, key selection criteria include its low thermal resistance (RthJC = 1.9 °C/W), halogen-free and lead-free compliance, 100 % Rg tested gate resistance, and validated performance under 150 °C junction temperature operation.
Technical Context
This MOSFET uses TrenchFET® Gen II silicon technology to achieve ultra-low on-resistance while maintaining fast switching characteristics. Its gate threshold voltage (VGS(th)) ranges from 1.0 V to 3.0 V, enabling robust turn-on with standard 4.5 V logic-level drive.
The device integrates a body diode with reverse recovery charge Qrr = 19–38 nC and trr = 30–60 ns, supporting high-frequency synchronous rectification. Thermal design leverages the exposed drain pad of the PowerPAK 1212-8 package for direct board conduction, achieving RthJA = 24 °C/W (10 s) and 65 °C/W (steady state) on FR4.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage suitable for 24 V input DC/DC stages |
| RDS(on) | 7.5 mΩ @ VGS = 10 V - Enables <1.4 W conduction loss at 18.3 A, critical for high-current power rails |
| ID (continuous) | 18.3 A @ TJ = 150 °C - Sustains high load currents without derating in compact layouts |
| Qg | 12.5 nC (typ.) - Low gate charge reduces driver power and enables >1 MHz switching in POL converters |
| RthJC | 1.9 °C/W (typ.) - Direct thermal path from die to PCB allows efficient heat extraction via copper pour |
| VGS(th) | 1.0–3.0 V - Ensures reliable enhancement-mode turn-on with 3.3 V or 5 V gate drivers |
| Qrr | 19–38 nC - Minimizes reverse recovery losses during hard-switched freewheeling |
Pinout & Package
SI7114DN-T1-GE3 is housed in a leadless PowerPAK® 1212-8 package (3.30 mm × 3.30 mm × 1.07 mm), featuring an exposed drain pad on the bottom side for optimal thermal transfer. The top-side terminals are arranged in an 8-pin configuration with dual drain connections.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications |
| 5 | Gate (G) | Single gate input with Rg = 0.7–2.1 Ω (tested) - ensures consistent switching timing and EMI control |
| 6, 7, 8 | Drain (D) | Three parallel drain terminals connected to the exposed bottom pad - forms primary thermal and current path to PCB |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen II silicon | Delivers 25 % lower RDS(on) vs. prior generation at same die size - improves power density in space-constrained modules |
| PowerPAK® 1212-8 package | 40 % smaller footprint than TSSOP-8 with 20× better thermal performance - enables thinner, higher-power designs |
| 100 % Rg tested | Guarantees gate resistance between 0.7 Ω and 2.1 Ω - eliminates timing skew in paralleled MOSFETs |
| Halogen-free & Pb-free | Meets IEC 61249-2-21 and JEDEC J-STD-020 - supports RoHS-compliant industrial and telecom manufacturing |
| Low-profile 1.07 mm height | Enables use in ultra-thin power supplies (<2.5 mm total height) without compromising thermal or electrical performance |
Applications
| Server VRM Output Stage | USB-C PD 45 W Adapter |
|---|---|
Use Scenario: High-current, high-frequency buck converter output stage delivering up to 40 A at 12 V in server CPU voltage regulators. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to minimize conduction loss and improve efficiency above 90 %. Use Value: 7.5 mΩ RDS(on) cuts conduction loss by >65 % vs. typical 20 mΩ alternatives, directly improving full-load efficiency and reducing heatsink requirements. | Use Scenario: Secondary-side synchronous rectification in compact 45 W USB-C power adapter operating at 200–500 kHz. IC Role / Device Role / Timing Role: Low-voltage-side switch in LLC or flyback topology, driven by controller with 4.5 V gate output. Use Value: 10 mΩ RDS(on) at 4.5 V ensures full enhancement with standard PWM controllers - eliminates need for gate boost circuitry. |
| Industrial PLC Power Module | Automotive ADAS Camera Power Supply |
Use Scenario: 24 V input DC/DC converter powering I/O modules in programmable logic controllers with extended temperature requirements. IC Role / Device Role / Timing Role: Primary high-side or low-side switch in isolated forward or active clamp flyback regulator. Use Value: -55 °C to +150 °C operating range and 29 A single-pulse avalanche rating ensure reliability under industrial surge and thermal cycling conditions. | Use Scenario: Point-of-load regulator supplying image sensor and ISP in automotive rear-view camera systems. IC Role / Device Role / Timing Role: Synchronous rectifier in 5 V/3 A buck converter with strict EMI and thermal constraints. Use Value: 1.07 mm profile fits within 3 mm board stack-up; low Qg (12.5 nC) minimizes switching loss and radiated emissions in safety-critical zones. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7113DN-T1-GE3 | Same PowerPAK 1212-8 package, but 40 V VDS, 9.5 mΩ @ 10 V, 15.5 A ID | Higher voltage rating suits 36 V industrial buses; lower current rating limits use in >15 A loads | Select when system requires 40 V blocking margin but can accept 13 % higher RDS(on) and 15 % lower current capability |
| DMN3026LSD-13 | 30 V, 6.8 mΩ @ 10 V, SO-8 package, 20 A ID, but RthJA = 50 °C/W (steady state) | Larger footprint and higher thermal resistance require larger PCB copper area for equivalent cooling | Choose only if SO-8 compatibility is mandatory and board space permits additional thermal relief copper |
Compared with SI7114DN-T1-GE3, Si7113DN-T1-GE3 trades voltage headroom for reduced current handling, while DMN3026LSD-13 offers marginally lower RDS(on) but sacrifices thermal efficiency and board-area savings - making SI7114DN-T1-GE3 optimal for space- and thermally constrained 30 V synchronous rectifiers.
Availability
SI7114DN-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, USB-C PD adapters, industrial PLC power modules, and automotive ADAS camera power supplies requiring stable component supply across multi-year production cycles.
Supply support for SI7114DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The Si7114DN product line belongs to Vishay's TrenchFET® Gen II PowerPAK® family, engineered specifically for high-current, high-frequency synchronous rectification in space-constrained DC/DC converters.
FAQ
What is the maximum junction temperature rating for SI7114DN-T1-GE3?
The SI7114DN-T1-GE3 has a specified operating junction temperature range of -55 °C to +150 °C. This rating is validated per Vishay's reliability testing and appears in the Absolute Maximum Ratings table of Document Number 73039. Operation at 150 °C enables use in high-ambient environments such as enclosed industrial enclosures or under-hood automotive modules, provided thermal design maintains TJ ≤ 150 °C. The SI7114DN-T1-GE3 must not exceed this limit continuously.
Does SI7114DN-T1-GE3 support 3.3 V gate drive?
SI7114DN-T1-GE3 has a gate threshold voltage VGS(th) of 1.0–3.0 V, but its RDS(on) is not characterized below VGS = 4.5 V. At 3.3 V, the device will conduct, but RDS(on) increases significantly beyond the 10 mΩ spec - potentially exceeding 25 mΩ. For guaranteed performance, SI7114DN-T1-GE3 should be driven with ≥4.5 V. Using 3.3 V gate drive may cause excessive conduction loss and thermal runaway in high-current applications.
What is the meaning of "-GE3" in SI7114DN-T1-GE3?
The "-GE3" suffix in SI7114DN-T1-GE3 indicates compliance with both lead-free (Pb-free) and halogen-free requirements per Vishay's internal specification. It distinguishes this variant from the "-T1-E3" version, which is Pb-free only. Both share identical electrical and thermal specifications, but SI7114DN-T1-GE3 meets stricter environmental standards including IEC 61249-2-21 for halogen content, making it suitable for aerospace, medical, and green-certified industrial products.
Can SI7114DN-T1-GE3 be used in parallel configurations?
Yes, SI7114DN-T1-GE3 supports paralleling due to its positive temperature coefficient of RDS(on) and 100 % Rg testing - ensuring matched gate resistance across units. Layout best practices include symmetrical trace lengths, Kelvin source connections, and individual gate resistors to suppress oscillation. Parallel operation is documented in Vishay Application Note AN822 for PowerPAK packages, confirming stable current sharing up to four devices in high-current VRMs using SI7114DN-T1-GE3.
Is there a recommended PCB land pattern for SI7114DN-T1-GE3?
Yes, Vishay provides a recommended minimum pad pattern for SI7114DN-T1-GE3 in Application Note 72597 (Rev. 21-Jan-08). The pattern specifies a 2.235 mm × 3.860 mm drain pad with 0.990 mm source pads and precise 0.65 mm pitch for gate and source terminals. Extending the drain copper beyond ~0.3–0.5 in² yields diminishing thermal returns. Adhering to this layout ensures optimal RthJA performance and solder joint reliability for SI7114DN-T1-GE3.
SI7114DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 11.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 7.5mOhm @ 18.3A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 19 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SI7114DN-T1-GE3 FAQ
1.How can I place an order for SI7114DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7114DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7114DN-T1-GE3 reliable?
The price and inventory of SI7114DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7114DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7114DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7114DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7114DN-T1-GE3?
SI7114DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7114DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7114DN-T1-GE3?
For technical support, including SI7114DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7114DN-T1-GE3 requirements.
6.How does Aetrix verify that SI7114DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7114DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7114DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7114DN-T1-GE3?
All SI7114DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7114DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7114DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7114DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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