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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7115DN-T1-E3

Name: SI7115DN-T1-E3
Brand: Vishay Siliconix
SKU: SI7115DN-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7115DN-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SI7115DN-T1-E3.pdf

Description:: MOSFET P-CH 150V 8.9A PPAK1212-8

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Product details

Overview

SI7115DN-T1-E3 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in PowerPAK® 1212-8 package, rated for -150 V drain-source voltage, 0.295 Ω R_DS(on) at V_GS = -10 V, and -8.9 A continuous drain current at T_C = 25 °C. It serves as a high-side switch in lighting H-bridge circuits and active clamp in DC/DC converters.

For engineers reviewing the SI7115DN-T1-E3 datasheet, SI7115DN-T1-E3 pinout, SI7115DN-T1-E3 application, or SI7115DN-T1-E3 equivalent, key selection considerations include its trench-based low-R_DS(on) performance, 1.05 mm profile for space-constrained layouts, 100 % R_g and UIS testing, and thermal resistance of 2.4 °C/W (junction-to-case).

Technical Context

This MOSFET employs TrenchFET® technology to achieve enhanced conduction efficiency and reduced gate charge (23.2 nC typ. at V_GS = -6 V). Its gate threshold voltage range (-2 V to -4 V) ensures robust turn-on control under negative bias conditions typical in high-side P-channel configurations.

The device integrates a body diode with 65–90 ns reverse recovery time and 180–270 nC Q_rr, supporting synchronous rectification and flyback energy management. Thermal design leverages the exposed drain pad of the PowerPAK 1212-8 package to deliver 2.4 °C/W R_thJC, enabling efficient heat transfer to PCB copper.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-150 V - supports high-voltage DC bus operation in industrial and telecom power supplies
R_DS(on) max @ V_GS = -10 V	0.295 Ω - enables <1.2 W conduction loss at 2 A load current
I_D continuous @ T_C = 25 °C	-8.9 A - suitable for medium-power switching in lighting and clamp circuits
Q_g typ. @ V_GS = -6 V	23.2 nC - determines gate drive power and switching speed in PWM applications
R_thJC max	2.4 °C/W - allows direct thermal coupling to PCB copper for passive cooling without heatsink
V_GS(th)	-2 to -4 V - ensures reliable turn-on with standard logic-level negative gate drivers
Body diode V_SD	-0.8 to -1.2 V @ I_S = -3 A - defines forward conduction loss during freewheeling

Pinout & Package

SI7115DN-T1-E3 uses the leadless PowerPAK® 1212-8 single configuration (3.3 mm × 3.3 mm footprint, 1.05 mm height), with exposed drain pad on bottom side for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 5, 6, 7, 8	Drain (D)	Seven parallel drain terminals tied to large exposed copper pad - provides low-inductance, high-current path and primary thermal conduction route to PCB
4	Gate (G)	Single gate input - requires negative voltage relative to source to turn on; compatible with standard isolated gate drivers
1, 5	Source (S)	Two source terminals - connect to system ground or floating node; define reference for gate drive and body diode anode

Key Features

Feature	Design Value
TrenchFET® process	Delivers 23.2 nC total gate charge and 0.245 Ω typical R_DS(on), reducing switching losses and improving efficiency in 100–500 kHz DC/DC stages
PowerPAK® 1212-8 package	1.05 mm profile and 3.3 mm × 3.3 mm footprint enable ultra-compact layout in LED drivers and server VRMs
100 % R_g tested	Guarantees gate resistance between 1.3–9.2 Ω, ensuring predictable gate drive timing and EMI behavior
100 % UIS tested	Validates ruggedness against unclamped inductive switching events up to 15 A and 11.25 mJ avalanche energy
Exposed drain pad	Enables junction-to-board thermal resistance as low as 2.4 °C/W, permitting >5 W dissipation with minimal copper area

Applications

Active Clamp in DC/DC Converters	H-Bridge High-Side Lighting Switch
Use Scenario: Used in the active clamp circuit of an isolated forward or flyback converter operating at 200–300 kHz, clamping transformer leakage energy and recycling it to input rail. IC Role / Device Role / Timing Role: P-channel MOSFET configured as synchronous clamp switch, turning on during transformer reset phase to recover energy and limit voltage overshoot. Use Value: Enables >92 % efficiency at 150 V input by minimizing clamp loss versus RC snubber; R_DS(on) stability over temperature maintains consistent clamping voltage.	Use Scenario: Controls high-side connection of LED strings in automotive headlamp or architectural lighting systems with PWM dimming up to 20 kHz. IC Role / Device Role / Timing Role: High-side P-channel switch driven by level-shifted gate signal, delivering precise current regulation and fast turn-off for flicker-free dimming. Use Value: Low 0.295 Ω R_DS(on) limits conduction loss to <1.2 W at 2 A, while 65 ns body diode t_rr prevents cross-conduction in half-bridge topology.
Industrial Motor Control Gate Driver	Telecom DC-DC Intermediate Bus Converter
Use Scenario: Implements high-side switch in three-phase inverter half-bridge stage for 24–48 V BLDC motor drives requiring fault-tolerant operation. IC Role / Device Role / Timing Role: P-channel MOSFET used in bootstrap-free high-side configuration, eliminating need for floating gate driver supply. Use Value: -150 V rating accommodates 100 V bus transients; 15 A pulsed drain current supports short-circuit protection response.	Use Scenario: Serves as active clamp switch in 48 V to 12 V intermediate bus converter for datacom equipment, handling 300 kHz switching with tight thermal constraints. IC Role / Device Role / Timing Role: Clamping switch synchronized to primary FET turn-off, absorbing leakage inductance energy and limiting voltage stress on main switch. Use Value: 2.4 °C/W R_thJC allows full 8.9 A rating with only 2-layer 2 oz copper, reducing board cost versus SO-8 alternatives.

Active Clamp in DC/DC Converters

H-Bridge High-Side Lighting Switch

Use Scenario: Used in the active clamp circuit of an isolated forward or flyback converter operating at 200–300 kHz, clamping transformer leakage energy and recycling it to input rail.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as synchronous clamp switch, turning on during transformer reset phase to recover energy and limit voltage overshoot.

Use Value: Enables >92 % efficiency at 150 V input by minimizing clamp loss versus RC snubber; R_DS(on) stability over temperature maintains consistent clamping voltage.

Use Scenario: Controls high-side connection of LED strings in automotive headlamp or architectural lighting systems with PWM dimming up to 20 kHz.

IC Role / Device Role / Timing Role: High-side P-channel switch driven by level-shifted gate signal, delivering precise current regulation and fast turn-off for flicker-free dimming.

Use Value: Low 0.295 Ω R_DS(on) limits conduction loss to <1.2 W at 2 A, while 65 ns body diode t_rr prevents cross-conduction in half-bridge topology.

Industrial Motor Control Gate Driver

Telecom DC-DC Intermediate Bus Converter

Use Scenario: Implements high-side switch in three-phase inverter half-bridge stage for 24–48 V BLDC motor drives requiring fault-tolerant operation.

IC Role / Device Role / Timing Role: P-channel MOSFET used in bootstrap-free high-side configuration, eliminating need for floating gate driver supply.

Use Value: -150 V rating accommodates 100 V bus transients; 15 A pulsed drain current supports short-circuit protection response.

Use Scenario: Serves as active clamp switch in 48 V to 12 V intermediate bus converter for datacom equipment, handling 300 kHz switching with tight thermal constraints.

IC Role / Device Role / Timing Role: Clamping switch synchronized to primary FET turn-off, absorbing leakage inductance energy and limiting voltage stress on main switch.

Use Value: 2.4 °C/W R_thJC allows full 8.9 A rating with only 2-layer 2 oz copper, reducing board cost versus SO-8 alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7114DN-T1-E3	-100 V V_DS, 0.125 Ω R_DS(on) @ -10 V, same PowerPAK 1212-8 package	Limited to ≤100 V systems; higher current density but lower voltage margin	Select when bus voltage is ≤80 V and lower R_DS(on) is prioritized over voltage headroom
IRF9540NPBF	TO-220 package, -100 V, 0.2 Ω R_DS(on), no R_g/UIS testing, 62 °C/W R_thJC	Requires heatsink and through-hole assembly; unsuitable for high-density SMT designs	Choose only for legacy through-hole designs where thermal mass outweighs size constraints

Compared with Si7114DN-T1-E3, SI7115DN-T1-E3 provides +50 V voltage margin critical for 150 V bus transient suppression; versus IRF9540NPBF, it delivers 25× lower thermal resistance and eliminates mechanical mounting complexity.

Availability

SI7115DN-T1-E3 is available at Aetrix Electronics and suitable for active clamp DC/DC converters, H-bridge lighting controls, and industrial motor gate drivers requiring stable component supply, RoHS-compliant packaging, and long-term production continuity.

Supply support for SI7115DN-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SI7115DN-T1-E3 belongs to Vishay's TrenchFET® PowerPAK® family, engineered specifically for compact, high-efficiency power conversion in space- and thermal-constrained applications such as LED drivers and telecom power supplies.

FAQ

What is the maximum continuous drain current rating for SI7115DN-T1-E3 at 70 °C case temperature?

The SI7115DN-T1-E3 supports -7.1 A continuous drain current at T_C = 70 °C, per Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK 1212-8 package and must be validated against actual PCB copper area and ambient conditions. The SI7115DN-T1-E3 datasheet specifies this value under steady-state conduction with proper heatsinking.

Does SI7115DN-T1-E3 have built-in ESD protection?

The SI7115DN-T1-E3 does not include integrated ESD protection circuitry. Its gate oxide is rated for ±20 V V_GS, and external gate protection (e.g., Zener clamp or series resistor) is recommended in systems prone to handling or system-level ESD events. The SI7115DN-T1-E3 specification sheet confirms no on-die ESD structures beyond standard process-level robustness.

Can SI7115DN-T1-E3 be used in linear mode (ohmic region) operation?

The SI7115DN-T1-E3 is characterized and qualified for switching operation only. Its Safe Operating Area (SOA) curve in the datasheet shows limited linear-mode capability - maximum 10 V × 1 A at 10 ms pulse width - and sustained linear use risks thermal runaway due to positive temperature coefficient of R_DS(on). For SI7115DN-T1-E3 linear applications, derating and thermal monitoring are mandatory.

What is the gate charge requirement for driving SI7115DN-T1-E3 at 300 kHz PWM frequency?

At 300 kHz, SI7115DN-T1-E3 requires 6.96 µC of gate charge per second (23.2 nC × 300 kHz), demanding a gate driver capable of sourcing/sinking ≥100 mA peak current to achieve sub-20 ns rise/fall times. The SI7115DN-T1-E3 Q_g value directly determines driver sizing and switching loss; using a 1 Ω gate resistor yields ~28 ns rise time per datasheet test conditions.

Is SI7115DN-T1-E3 halogen-free and RoHS-compliant?

Yes, SI7115DN-T1-E3 is both lead (Pb)-free and halogen-free, meeting RoHS Directive 2011/65/EU and IEC 61249-2-21 requirements. The "-E3" suffix explicitly denotes lead-free and halogen-free construction, verified per Vishay's material declaration document #99912. SI7115DN-T1-E3 complies with JEDEC J-STD-020 reflow profiles for Pb-free soldering.

SI7115DN-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 8.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 295mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1190 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 52W (Tc)

Operating Temperature:: -50°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SI7115DN-T1-E3 FAQ

1.How can I place an order for SI7115DN-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7115DN-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7115DN-T1-E3 reliable?

The price and inventory of SI7115DN-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7115DN-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI7115DN-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7115DN-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7115DN-T1-E3?

SI7115DN-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7115DN-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7115DN-T1-E3?

For technical support, including SI7115DN-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7115DN-T1-E3 requirements.

6.How does Aetrix verify that SI7115DN-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI7115DN-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7115DN-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI7115DN-T1-E3?

All SI7115DN-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7115DN-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7115DN-T1-E3 part is unused and in its original packaging.

Return procedure for SI7115DN-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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