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Vishay Siliconix SI7116BDN-T1-GE3
- Part No.:
- SI7116BDN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SI7116BDN-T1-GE3.pdf
- Description:
- MOSFET N-CH 40V 18.4A/65A PPAK
- Quantity:
- Payment:
- Shipping:
Inventory:11,232
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Product details
Overview
SI7116BDN-T1-GE3 from Vishay Siliconix is an N-channel 40 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® 1212-8PT package, rated for 65 A continuous drain current at TC = 25 °C, with RDS(on) of 7.4 mΩ at VGS = 10 V and 9.6 mΩ at VGS = 4.5 V, optimized for high-efficiency synchronous rectification in DC/DC converters.
For engineers reviewing the SI7116BDN-T1-GE3 datasheet, SI7116BDN-T1-GE3 pinout, SI7116BDN-T1-GE3 application, or SI7116BDN-T1-GE3 equivalent, key selection considerations include its low Qg (14.2 nC @ 4.5 V), Crss/Ciss ratio (0.05–0.10), 100% Rg and UIS tested reliability, and thermal resistance RthJC of 1.4 °C/W for high-power-density board-level thermal management.
Technical Context
This MOSFET employs TrenchFET® Gen IV silicon technology to achieve ultra-low gate charge and optimized capacitance ratios-Qg = 14.2 nC and Crss = 95 pF at VDS = 20 V-enabling fast switching with reduced Miller-induced turn-off delay and minimized switching loss in hard-switched topologies.
Its PowerPAK 1212-8PT leadless package features exposed copper drain pads on the bottom side for low-inductance, high-current conduction and direct thermal path to PCB copper, supporting junction-to-case thermal resistance as low as 1.4 °C/W under steady-state conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 40 V - defines maximum blocking voltage in high-side or synchronous rectifier configurations |
| RDS(on) @ 10 V | 7.4 mΩ - enables <1 W conduction loss at 36 A in 12 V input buck stages |
| RDS(on) @ 4.5 V | 9.6 mΩ - supports logic-level gate drive compatibility with 3.3 V/5 V controllers |
| Qg typ @ 4.5 V | 14.2 nC - reduces total gate drive energy and driver IC power dissipation |
| Crss/Ciss ratio | 0.05–0.10 - lowers risk of false turn-on during high dv/dt commutation |
| ID continuous @ TC=25°C | 65 A - supports high-current output rails in server VRMs and telecom power supplies |
| RthJC max | 2.0 °C/W - allows precise junction temperature estimation when heatsinking via PCB |
Pinout & Package
Package: PowerPAK® 1212-8PT - 3.3 mm × 3.3 mm × 0.75 mm leadless surface-mount package with exposed drain copper on bottom side for thermal and electrical performance; no leads, solder fillet at copper tip not required.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Low-side return path; four parallel terminals reduce source inductance and improve current sharing |
| 5, 6, 7, 8 | Drain (D) | High-current power path; all eight terminals connected internally to exposed bottom drain pad |
| G (Gate) | Control terminal | Single top-side gate pad; requires controlled slew rate to manage Qgd-driven switching behavior |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen IV silicon | Delivers 25% lower Qg vs. prior generation while maintaining RDS(on) scalability for 40 V class |
| 100% Rg tested | Ensures gate resistance consistency (0.2–2.2 Ω) critical for predictable turn-on timing across production lots |
| 100% UIS tested | Validates ruggedness against unclamped inductive switching stress up to 30 A avalanche current |
| Optimized Crss/Ciss ratio | 0.05–0.10 minimizes Miller plateau duration and improves EMI profile in high-frequency SMPS |
| Lead (Pb)-free & halogen-free | Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc#99912 |
Applications
| Synchronous Buck Converter | High-Density DC/DC Module |
|---|---|
Use Scenario: Primary high-side switch in 48 V–12 V intermediate bus converter operating at 300–500 kHz. IC Role / Device Role / Timing Role: High-current, low-RDS(on) power switch handling peak currents >50 A with minimal conduction loss. Use Value: 7.4 mΩ RDS(on) at 10 V enables <0.9 W conduction loss at 35 A, improving full-load efficiency by ≥0.4% over comparable 8.5 mΩ devices. |
Use Scenario: Secondary-side synchronous rectifier in isolated 12 V output module for AI accelerators. IC Role / Device Role / Timing Role: Low-threshold N-channel MOSFET replacing Schottky diode to reduce forward voltage drop and recovery loss. Use Value: 9.6 mΩ RDS(on) at 4.5 V ensures <0.25 V effective forward drop at 50 A, cutting rectifier loss by >60% versus 0.55 V Schottky. |
| Synchronous Rectification | Load Switching |
Use Scenario: Output rectifier in non-isolated point-of-load (PoL) regulator supplying GPU core voltage. IC Role / Device Role / Timing Role: Fast-recovery body diode and low-Qg channel used in active synchronous rectification control scheme. Use Value: trr = 20–40 ns and Qrr = 16–35 nC minimize reverse recovery energy loss during dead-time transitions. |
Use Scenario: Hot-swap and inrush current limiting switch in industrial I/O module backplane. IC Role / Device Role / Timing Role: Single N-channel load switch with integrated gate driver interface and overcurrent protection support. Use Value: 65 A continuous rating and 100 A pulsed capability enable robust 48 V/20 A hot-plug operation without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 11.5 mΩ @ 10 V; Qg = 22 nC; TO-252 package; higher RthJA (62 °C/W) | Lower current density; less suitable for >400 kHz designs due to higher Qg and Crss | Prefer SI7116BDN-T1-GE3 where board space, thermal performance, or switching frequency exceed IRF7470PBF limits. |
| DMTH4007LPSQ-13 | RDS(on) = 6.8 mΩ @ 10 V; Qg = 15.5 nC; PowerDI™ 5060 package; RthJC = 1.6 °C/W | Marginally lower RDS(on) but larger footprint (5.0 × 6.0 mm); slightly higher Qg increases gate drive loss | Choose SI7116BDN-T1-GE3 for compact 3.3 mm × 3.3 mm layout and superior Crss/Ciss ratio in noise-sensitive applications. |
Compared with IRF7470PBF and DMTH4007LPSQ-13, SI7116BDN-T1-GE3 delivers best-in-class RDS(on)/Qg tradeoff in a 3.3 mm × 3.3 mm footprint, enabling higher power density and lower EMI in 300–1000 kHz DC/DC converters without sacrificing avalanche ruggedness or thermal performance.
Availability
SI7116BDN-T1-GE3 is available at Aetrix Electronics and suitable for synchronous buck converters, high-density DC/DC modules, and industrial load switching applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for SI7116BDN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The SI7116BDN-T1-GE3 belongs to Vishay's TrenchFET® Gen IV family, engineered specifically for high-efficiency, high-frequency DC/DC conversion in datacenter, telecom, and industrial power systems.
FAQ
What is the maximum continuous drain current rating for SI7116BDN-T1-GE3 at TC = 70 °C?
The SI7116BDN-T1-GE3 has a maximum continuous drain current ID of 52 A at case temperature TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK 1212-8PT package under sustained high-power operation and must be validated against actual board-level thermal design using RthJC = 1.4 °C/W.
Does SI7116BDN-T1-GE3 support logic-level gate drive?
Yes, SI7116BDN-T1-GE3 supports logic-level gate drive with guaranteed RDS(on) of 9.6 mΩ at VGS = 4.5 V, making it compatible with standard 3.3 V and 5 V PWM controllers. Its gate threshold voltage VGS(th) ranges from 1.5 V to 2.5 V, ensuring reliable turn-on with margin above typical logic-high levels.
What is the body diode reverse recovery time (trr) of SI7116BDN-T1-GE3?
The body diode reverse recovery time trr of SI7116BDN-T1-GE3 is 20–40 ns under test conditions of IF = 5 A, di/dt = 100 A/μs, and TJ = 25 °C. This fast recovery characteristic supports efficient synchronous rectification in high-frequency buck converters where diode conduction occurs during dead time.
Is SI7116BDN-T1-GE3 suitable for avalanche energy handling?
Yes, SI7116BDN-T1-GE3 is 100% UIS (unclamped inductive switching) tested with a single-pulse avalanche energy rating EAS of 45 mJ and single-pulse avalanche current IAS of 30 A. This confirms ruggedness for inductive load switching and fault-tolerant operation in motor drivers and power supplies.
What is the thermal resistance from junction to case (RthJC) for SI7116BDN-T1-GE3?
The maximum junction-to-case thermal resistance RthJC for SI7116BDN-T1-GE3 is 2.0 °C/W, with a typical value of 1.4 °C/W. This low value is enabled by the PowerPAK 1212-8PT package's exposed drain pad, allowing efficient heat transfer from the die directly to the PCB copper plane.
SI7116BDN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 18.4A (Ta), 65A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 7.4mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 48 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1915 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Ta), 62.5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SI7116BDN-T1-GE3 FAQ
1.How can I place an order for SI7116BDN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7116BDN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7116BDN-T1-GE3 reliable?
The price and inventory of SI7116BDN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7116BDN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7116BDN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7116BDN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7116BDN-T1-GE3?
SI7116BDN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7116BDN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7116BDN-T1-GE3?
For technical support, including SI7116BDN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7116BDN-T1-GE3 requirements.
6.How does Aetrix verify that SI7116BDN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7116BDN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7116BDN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7116BDN-T1-GE3?
All SI7116BDN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7116BDN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7116BDN-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7116BDN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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