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Vishay Siliconix SI7117DN-T1-GE3
- Part No.:
- SI7117DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SI7117DN-T1-GE3.pdf
- Description:
- MOSFET P-CH 150V 2.17A PPAK
- Quantity:
- Payment:
- Shipping:
Inventory:1,461
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Product details
Overview
SI7117DN-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET in PowerPAK® 1212-8 package, rated for -150 V drain-source voltage, 1.2 Ω RDS(on) at VGS = -10 V, and -2.17 A continuous drain current at TC = 25 °C. It serves as a high-voltage active clamp switch in isolated DC/DC converters.
For engineers reviewing the SI7117DN-T1-GE3 datasheet, SI7117DN-T1-GE3 pinout, SI7117DN-T1-GE3 application, or SI7117DN-T1-GE3 equivalent, key selection criteria include its -150 V rating, low 1.2 Ω on-resistance at -10 V gate drive, 7.7 nC total gate charge, thermal resistance of 8 °C/W (junction-to-case), and compatibility with lead-free reflow profiles up to 240 °C.
Technical Context
This device uses trench-gate silicon technology to achieve high breakdown voltage and low on-resistance in a compact surface-mount package. Its P-channel configuration enables high-side switching without level-shifting circuitry in clamp topologies.
The PowerPAK 1212-8 package features an exposed drain pad on the bottom side for direct thermal conduction to the PCB, delivering 8 °C/W typical junction-to-case thermal resistance - over 5× better than standard TSSOP-8. Gate threshold voltage is specified between -2.5 V and -4.5 V, ensuring robust turn-off under noisy conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -150 V - supports clamping of high-voltage flyback or forward converter secondary-side spikes |
| RDS(on) max @ VGS = -10 V | 1.2 Ω - limits conduction loss to ≤1.2 W at -1 A drain current |
| Qg typ. | 7.7 nC - enables fast switching with moderate gate driver strength (e.g., 1–2 A peak) |
| ID continuous @ TC = 25 °C | -2.17 A - defines maximum steady-state current when mounted on heatsinked PCB area |
| RthJC max | 10 °C/W - allows ~12.5 W power dissipation before reaching 150 °C junction limit |
| VGS(th) | -2.5 to -4.5 V - ensures reliable turn-on with standard -5 V or -10 V gate drivers |
| Ciss typ. | 340 pF - contributes to Miller-effect-limited switching speed in hard-switched applications |
Pinout & Package
SI7117DN-T1-GE3 is housed in the PowerPAK® 1212-8 single configuration: 3.3 mm × 3.3 mm footprint, 1.07 mm height, with exposed drain pad on bottom side for thermal and electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt clamp operation |
| 5, 6, 7, 8 | Drain (D) | Four parallel drain terminals connect to exposed bottom pad - primary thermal path and high-current return |
| 4 (top-side center) | Gate (G) | Single gate terminal located centrally for balanced drive; requires <10 Ω series resistance to damp ringing |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® process | Enables -150 V rating with 1.2 Ω RDS(on) in 3.3 mm × 3.3 mm footprint - 2× die area vs. TSOP-6 |
| PowerPAK® 1212-8 package | 1.07 mm profile and 8 °C/W RthJC - fits ultra-thin power modules while dissipating >12 W with minimal board copper |
| Low Qgd/Qgs ratio | 2.5 nC / 1.5 nC = 1.67 - improves hard-switching immunity and reduces risk of spurious turn-on during dV/dt events |
| Body diode trr | 42 ns typ. - supports synchronous rectification in resonant topologies where reverse recovery must be controlled |
| Lead (Pb)-free & halogen-free | Complies with RoHS 2011/65/EU and JEDEC JS709E - qualified for automotive and industrial production without exemptions |
Applications
| Active Clamp Flyback Converter | High-Voltage Isolated Gate Driver Bias Supply |
|---|---|
|
Use Scenario: Clamps transformer reset voltage in 48 V–400 V input flyback converters used in telecom and industrial SMPS. IC Role / Device Role / Timing Role: High-side P-channel switch synchronously activated during transformer reset phase to absorb leakage energy. Use Value: Enables >90% efficiency by recycling leakage energy instead of dissipating it in a Zener clamp; -150 V rating accommodates 2× input + margin. |
Use Scenario: Provides isolated negative bias for SiC or GaN gate drivers in high-side half-bridge configurations. IC Role / Device Role / Timing Role: Low-duty-cycle P-channel switch generating regulated -5 V or -10 V rail from auxiliary winding. Use Value: Eliminates need for discrete charge pump or transformer-based bias supply; 1.2 Ω RDS(on) ensures stable regulation under load transients. |
| DC/DC Voltage Balancer Cell | High-Side Load Switch for 100 V Bus Monitoring |
|
Use Scenario: Equalizes voltage across series-connected supercapacitors or battery cells in energy storage systems. IC Role / Device Role / Timing Role: Precision-controlled P-channel switch shunting excess cell voltage during balancing cycles. Use Value: -150 V rating supports up to 120 V string voltage; low 7.7 nC Qg enables microcontroller-driven PWM balancing at 1–10 kHz. |
Use Scenario: Enables safe hot-swap and isolation of 100 V DC bus sections during fault detection or maintenance. IC Role / Device Role / Timing Role: High-reliability P-channel load switch controlling power delivery to downstream monitoring ICs or sensors. Use Value: 10 °C/W RthJC allows full -2.17 A rating without external heatsink; -4.5 V VGS(th) max ensures clean turn-off during brownout. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7118DN-T1-GE3 | -200 V VDS, 2.0 Ω RDS(on) @ -10 V, same PowerPAK 1212-8 package and pinout | Better voltage margin for 400 V+ systems; higher on-resistance increases conduction loss by ~65% | Choose Si7118DN-T1-GE3 only if design requires >150 V blocking with same layout |
| IRF9540NPBF | TO-220 package, -100 V VDS, 0.2 Ω RDS(on), 44 nC Qg, through-hole mounting | Lower voltage rating but superior conduction performance; unsuitable for space-constrained SMT designs | Choose IRF9540NPBF only for prototyping or low-volume through-hole builds where thermal mass outweighs size constraints |
Compared with SI7117DN-T1-GE3, Si7118DN-T1-GE3 trades 0.8 Ω higher RDS(on) for +50 V voltage headroom, while IRF9540NPBF offers lower on-resistance but sacrifices SMT compatibility, thermal density, and gate charge efficiency - making SI7117DN-T1-GE3 optimal for compact, high-efficiency 150 V clamp circuits.
Availability
SI7117DN-T1-GE3 is available at Aetrix Electronics and suitable for active clamp flyback converters, high-voltage gate driver bias supplies, and DC/DC voltage balancer cells requiring stable component supply, RoHS-compliant sourcing, and consistent PowerPAK 1212-8 land pattern support.
Supply support for SI7117DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high reliability and thermal performance.
The SI7117DN-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK® family, engineered specifically for high-voltage, space-constrained power conversion applications where thermal density and switching efficiency are critical.
FAQ
What is the maximum operating junction temperature for SI7117DN-T1-GE3?
The SI7117DN-T1-GE3 has an operating junction temperature range of -55 °C to +150 °C. Its absolute maximum rating is +150 °C, and thermal derating begins above +25 °C ambient when mounted on a standard FR4 board. The device's RthJC of 8 °C/W means that at 12.5 W dissipation, junction temperature rises 100 °C above case temperature - confirming the +150 °C limit aligns with its 12.5 W PD rating at TC = 25 °C.
Does SI7117DN-T1-GE3 support lead-free reflow soldering?
Yes, SI7117DN-T1-GE3 is qualified for lead-free reflow per J-STD-020. Its peak reflow temperature is rated to 240 °C for 20–40 seconds, matching standard Pb-free profiles. The PowerPAK 1212-8 package is explicitly designed for this process, with documented thermal cycling reliability and no solder fillet requirement at the exposed copper drain pad - as confirmed in Vishay document 73257.
Can SI7117DN-T1-GE3 be used in linear mode operation?
No, SI7117DN-T1-GE3 is not characterized or rated for linear (ohmic) operation. Its Safe Operating Area (SOA) curve in the datasheet shows limited DC capability - only 0.9 A at 50 V and 0.3 A at 100 V - and thermal instability arises rapidly beyond brief pulse conditions. For linear regulation, a MOSFET with specified SOA, lateral structure, or dedicated linear-grade qualification (e.g., IXYS L2-series) should be selected instead of SI7117DN-T1-GE3.
What is the body diode forward voltage of SI7117DN-T1-GE3 at -1 A?
The body diode forward voltage (VSD) of SI7117DN-T1-GE3 is -0.7 V to -1.2 V at IS = -1 A and VGS = 0 V, per the datasheet's "Drain-Source Body Diode Characteristics" table. This range reflects process variation and temperature dependence - at 25 °C, typical VSD is approximately -0.85 V, rising to ~-1.1 V at 125 °C junction temperature.
Is SI7117DN-T1-GE3 pin-compatible with other PowerPAK 1212-8 P-channel MOSFETs?
Yes, SI7117DN-T1-GE3 shares identical PowerPAK 1212-8 single-pinout with all Vishay P-channel devices in that package family, including Si7118DN-T1-GE3 and Si7121DP-T1-GE3. Pin positions 1–4 are Source, 5–8 are Drain, and top-side center is Gate - verified in Vishay package drawing 71656 and confirmed by top/bottom view diagrams in document 73478.
SI7117DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.2Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 510 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.2W (Ta), 12.5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SI7117DN-T1-GE3 FAQ
1.How can I place an order for SI7117DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7117DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7117DN-T1-GE3 reliable?
The price and inventory of SI7117DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7117DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7117DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7117DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7117DN-T1-GE3?
SI7117DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7117DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7117DN-T1-GE3?
For technical support, including SI7117DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7117DN-T1-GE3 requirements.
6.How does Aetrix verify that SI7117DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7117DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7117DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7117DN-T1-GE3?
All SI7117DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7117DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7117DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7117DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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