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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7120ADN-T1-GE3

Name: SI7120ADN-T1-GE3
Brand: Vishay Siliconix
SKU: SI7120ADN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7120ADN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SI7120ADN-T1-GE3.pdf

Description:: MOSFET N-CH 60V 6A PPAK1212-8

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Product details

Overview

SI7120ADN-T1-GE3 from Vishay Siliconix is a N-channel 60 V (D-S) TrenchFET® Power MOSFET in PowerPAK® 1212-8 package, with R_DS(on) = 0.021 Ω at V_GS = 10 V, I_D = 9.5 A, and 100 % UIS tested. It serves as a primary-side switch or synchronous rectifier in high-efficiency DC-DC converters and AC-DC power supplies.

For engineers reviewing the SI7120ADN-T1-GE3 datasheet, SI7120ADN-T1-GE3 pinout, SI7120ADN-T1-GE3 application, or SI7120ADN-T1-GE3 equivalent, key selection criteria include its 60 V V_DS, low 0.021 Ω on-resistance at 10 V gate drive, 3.8 W steady-state power dissipation, 26 °C/W junction-to-ambient thermal resistance (t ≤ 10 s), and halogen-free RoHS-compliant construction.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching. Its gate threshold voltage (V_GS(th)) ranges from 1.5 V to 3.0 V, enabling compatibility with standard 4.5 V and 10 V logic-level drivers. The device features fully characterized dynamic parameters including Q_g = 30–45 nC and t_d(off) = 50–80 ns under defined test conditions.

Thermally, it leverages the PowerPAK® 1212-8's exposed drain pad for direct board heat sinking, achieving R_thJC = 1.9–2.4 °C/W. Its 100 % UIS (Unclamped Inductive Switching) and avalanche energy rating of 24 mJ support robust operation in inductive load switching applications without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage for primary-side switch use in ≤ 48 V input systems with margin.
R_DS(on)	0.021 Ω @ V_GS = 10 V - Enables <1.9 W conduction loss at 9.5 A, critical for high-current synchronous rectification.
I_D (continuous)	9.5 A @ T_J = 150 °C - Supports sustained current delivery in compact power stages with adequate PCB copper area.
Q_g	30–45 nC - Determines gate driver strength requirement; enables efficient 500 kHz+ switching with moderate drive capability.
R_thJA (t ≤ 10 s)	26–33 °C/W - Allows ~3.8 W power dissipation on 1" × 1" FR4 with minimal heatsinking, reducing thermal design overhead.
E_AS	24 mJ - Withstands unclamped inductive energy during turn-off, improving reliability in flyback and LLC resonant converters.
V_GS(th)	1.5–3.0 V - Ensures turn-on with 3.3 V or 5 V logic, supporting direct microcontroller gate drive in low-voltage control circuits.

Pinout & Package

SI7120ADN-T1-GE3 uses the leadless PowerPAK® 1212-8 package (3.30 mm × 3.30 mm footprint), with exposed drain terminals on the bottom side for thermal conduction and four drain pads, one source pad, and one gate terminal on the top surface.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4 (Drain)	High-current drain connection	Four parallel drain terminals tied internally to die drain; require full-solder coverage on PCB for optimal thermal and current handling.
5 (Gate)	Control input	Single gate terminal; low 0.65–1.95 Ω gate resistance supports clean switching with minimal ringing.
6, 7, 8 (Source)	Power return path	Three source terminals connected to source metallization; provide low-inductance return path for high di/dt switching currents.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers industry-leading R_DS(on) × area efficiency, enabling smaller footprints without sacrificing conduction loss.
100 % UIS tested	Guarantees avalanche ruggedness per unit, eliminating need for batch-level qualification screening in production.
Halogen-free & RoHS compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC, supporting environmentally regulated industrial and consumer end equipment.
Exposed drain pad	Provides direct thermal path from junction to PCB, reducing R_thJA by up to 50 % versus comparable SO-8 or TSSOP-8 packages.
Low Q_gd/Q_gs ratio	Q_gd = 5.8 nC, Q_gs = 6.9 nC - Minimizes Miller effect, improving hard-switching stability and reducing gate drive losses.

Applications

AC-DC Adapter Primary Switch	USB-C PD Synchronous Rectifier
Use Scenario: High-frequency flyback converter in 65 W laptop adapters operating at 100–200 kHz. IC Role / Device Role / Timing Role: Primary-side power switch controlling energy transfer from input to transformer primary winding. Use Value: 60 V rating accommodates reflected output voltage plus leakage spikes; 0.021 Ω R_DS(on) reduces conduction loss by >30 % vs. legacy 80 V MOSFETs at same current.	Use Scenario: Secondary-side synchronous rectification in 45–100 W USB-C Power Delivery chargers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to minimize forward voltage drop and improve efficiency. Use Value: 0.78–1.2 V V_SD and 7.9 A I_D @ 4.5 V gate drive enable >94 % efficiency at full load while maintaining tight thermal profile in ultra-thin form factors.
Industrial SMPS Half-Bridge Leg	Automotive LED Driver High-Side Switch
Use Scenario: 24 V input half-bridge DC-DC converter for programmable logic controller (PLC) power rails. IC Role / Device Role / Timing Role: Upper or lower switch in half-bridge topology driving isolated gate driver with bootstrap supply. Use Value: 100 % UIS testing ensures survival during shoot-through transients; 24 mJ E_AS prevents failure during overcurrent events without added protection circuitry.	Use Scenario: Constant-current LED driver for automotive interior lighting with PWM dimming at 1–2 kHz. IC Role / Device Role / Timing Role: High-side switch controlling current flow through LED string using high-side gate driver IC. Use Value: 1.5–3.0 V V_GS(th) allows reliable turn-on with automotive 5 V supply; 60 V rating covers load-dump transients up to ISO 7637-2 Pulse 5a.

AC-DC Adapter Primary Switch

USB-C PD Synchronous Rectifier

Use Scenario: High-frequency flyback converter in 65 W laptop adapters operating at 100–200 kHz.

IC Role / Device Role / Timing Role: Primary-side power switch controlling energy transfer from input to transformer primary winding.

Use Value: 60 V rating accommodates reflected output voltage plus leakage spikes; 0.021 Ω R_DS(on) reduces conduction loss by >30 % vs. legacy 80 V MOSFETs at same current.

Use Scenario: Secondary-side synchronous rectification in 45–100 W USB-C Power Delivery chargers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to minimize forward voltage drop and improve efficiency.

Use Value: 0.78–1.2 V V_SD and 7.9 A I_D @ 4.5 V gate drive enable >94 % efficiency at full load while maintaining tight thermal profile in ultra-thin form factors.

Industrial SMPS Half-Bridge Leg

Automotive LED Driver High-Side Switch

Use Scenario: 24 V input half-bridge DC-DC converter for programmable logic controller (PLC) power rails.

IC Role / Device Role / Timing Role: Upper or lower switch in half-bridge topology driving isolated gate driver with bootstrap supply.

Use Value: 100 % UIS testing ensures survival during shoot-through transients; 24 mJ E_AS prevents failure during overcurrent events without added protection circuitry.

Use Scenario: Constant-current LED driver for automotive interior lighting with PWM dimming at 1–2 kHz.

IC Role / Device Role / Timing Role: High-side switch controlling current flow through LED string using high-side gate driver IC.

Use Value: 1.5–3.0 V V_GS(th) allows reliable turn-on with automotive 5 V supply; 60 V rating covers load-dump transients up to ISO 7637-2 Pulse 5a.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SUP60090-07-E3	Higher R_DS(on) = 0.028 Ω @ 10 V; larger PowerPAK SO-8 package (5.0 × 6.0 mm); higher R_thJA = 50 °C/W.	Less suitable for space-constrained USB-C PD designs; better for legacy SO-8 layouts requiring no PCB rework.	Choose when existing SO-8 footprint must be retained and thermal margin permits higher on-resistance.
DMN601DWK-7	Lower I_D = 5.8 A; smaller SOT-26 package; R_DS(on) = 0.035 Ω @ 10 V; no UIS rating specified.	Targeted at low-power auxiliary supplies or signal switching, not primary power conversion.	Choose only for sub-5 A loads where cost and size outweigh ruggedness and efficiency requirements.

Compared with SUP60090-07-E3 and DMN601DWK-7, SI7120ADN-T1-GE3 delivers superior power density (3.3 mm × 3.3 mm), lowest R_DS(on), and guaranteed UIS performance-making it optimal for high-efficiency, thermally constrained 6–10 A power stages where layout area and reliability are critical.

Availability

SI7120ADN-T1-GE3 is available at Aetrix Electronics and suitable for AC-DC adapters, USB-C PD chargers, and industrial SMPS requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for SI7120ADN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The Si7120ADN product line targets high-efficiency, space-constrained power conversion applications-including primary-side switching and synchronous rectification-leveraging TrenchFET® and PowerPAK® technologies to maximize R_DS(on) density and thermal performance.

FAQ

What is the maximum continuous drain current rating for SI7120ADN-T1-GE3 at 70 °C ambient temperature?

The SI7120ADN-T1-GE3 supports 7.6 A continuous drain current at T_A = 70 °C with T_J = 150 °C, as specified in its Absolute Maximum Ratings table. This value assumes proper PCB copper area for thermal dissipation and accounts for derating due to ambient temperature rise. Actual achievable current depends on layout, airflow, and thermal interface; the SI7120ADN-T1-GE3 datasheet provides R_thJA curves to support precise thermal modeling.

Does SI7120ADN-T1-GE3 support 3.3 V logic-level gate drive?

Yes, SI7120ADN-T1-GE3 has a gate threshold voltage (V_GS(th)) range of 1.5–3.0 V, enabling turn-on with 3.3 V gate drive. At V_GS = 4.5 V, it delivers R_DS(on) = 0.031 Ω and I_D = 7.9 A, making it suitable for 3.3 V microcontroller-driven applications. However, full 9.5 A capability requires 10 V drive; system designers should verify gate driver output swing and loading to ensure sufficient V_GS margin across temperature and process variation.

Is SI7120ADN-T1-GE3 suitable for synchronous rectification in a 20 V output LLC resonant converter?

Yes, SI7120ADN-T1-GE3 is well-suited for synchronous rectification in 20 V output LLC converters. Its 60 V V_DS rating provides ample margin against voltage overshoots during zero-voltage switching transitions, and its low 0.021 Ω R_DS(on) at 10 V gate drive minimizes conduction loss. The SI7120ADN-T1-GE3 also features fast switching parameters (t_d(off) = 50–80 ns, Q_gd = 5.8 nC) that support precise timing control required for LLC secondary-side gate driving.

What is the recommended solder reflow profile for SI7120ADN-T1-GE3?

The SI7120ADN-T1-GE3 requires lead-free reflow with peak temperature of 240 +5/−0 °C held for 20–40 seconds, maximum ramp-down rate of 6 °C/s, and time above 180 °C between 70–180 seconds. Vishay specifies this per document 73257; the PowerPAK® 1212-8 package is qualified to JEDEC J-STD-020 moisture sensitivity level 1, allowing unlimited floor life if sealed per MSL requirements. Always validate profile with actual board mass and thermal mass.

How does the PowerPAK® 1212-8 package of SI7120ADN-T1-GE3 improve thermal performance compared to SO-8?

The PowerPAK® 1212-8 package of SI7120ADN-T1-GE3 achieves R_thJC = 1.9–2.4 °C/W-over 10× better than standard SO-8 (≈20 °C/W)-by exposing the drain pad directly to the PCB. This enables >80 % of heat to conduct through the bottom side rather than via leads. In practice, SI7120ADN-T1-GE3 shows only a 4.8 °C junction rise above board temperature at 2 W dissipation, versus >40 °C for SO-8 equivalents, preserving R_DS(on) stability and extending lifetime.

SI7120ADN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 21mOhm @ 9.5A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SI7120ADN-T1-GE3 FAQ

1.How can I place an order for SI7120ADN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7120ADN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7120ADN-T1-GE3 reliable?

The price and inventory of SI7120ADN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7120ADN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI7120ADN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7120ADN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7120ADN-T1-GE3?

SI7120ADN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7120ADN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7120ADN-T1-GE3?

For technical support, including SI7120ADN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7120ADN-T1-GE3 requirements.

6.How does Aetrix verify that SI7120ADN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI7120ADN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7120ADN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI7120ADN-T1-GE3?

All SI7120ADN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7120ADN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7120ADN-T1-GE3 part is unused and in its original packaging.

Return procedure for SI7120ADN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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