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Vishay Siliconix SI7123DN-T1-GE3
- Part No.:
- SI7123DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SI7123DN-T1-GE3.pdf
- Description:
- MOSFET P-CH 20V 10.2A PPAK1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:6,742
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Product details
Overview
SI7123DN-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® Power MOSFET in PowerPAK® 1212-8 package, rated for -20 V VDS, 0.0106 Ω RDS(on) at -4.5 V VGS, and -16.0 A continuous drain current at TA = 25 °C. It serves as a high-efficiency load switch in portable battery-powered systems requiring ultra-low on-resistance and compact footprint.
For engineers reviewing the SI7123DN-T1-GE3 datasheet, SI7123DN-T1-GE3 pinout, SI7123DN-T1-GE3 application, or SI7123DN-T1-GE3 equivalent, key selection criteria include its -1.8 V gate threshold compatibility with low-voltage logic, 1.07 mm profile for space-constrained PCBs, halogen-free and RoHS-compliant construction, and thermal performance optimized for FR4 board mounting without external heatsinking.
Technical Context
This device uses trench-gate silicon technology to achieve low RDS(on) at gate voltages as low as -1.8 V, enabling direct drive from 1.8 V/2.5 V/3.3 V microcontrollers. Its PowerPAK 1212-8 package features an exposed drain pad on the bottom side for low RthJC (1.9 °C/W typical) and minimal thermal resistance to the PCB.
The MOSFET exhibits fast switching characteristics: 25 ns turn-on delay, 88 ns rise time, 82 ns turn-off delay, and 28 ns fall time under standard test conditions. Body diode parameters include VSD = -0.76 V at -13 A and trr = 48 ns, supporting synchronous rectification and reverse recovery–sensitive topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum drain-source blocking voltage; supports 12 V rail and battery backup circuits up to 20 V reverse polarity. |
| RDS(on) @ VGS = -4.5 V | 0.0106 Ω - Enables <17 mW conduction loss at 15 A, critical for extending battery life in portable power switches. |
| ID Continuous @ TA = 25 °C | -16.0 A - Sustains high-current load switching without derating on standard 1" × 1" FR4 board. |
| Qg @ VGS = -4.5 V | 57 nC - Low gate charge reduces driver power requirement and enables efficient PWM control at >1 MHz. |
| RthJA (Steady State) | 65 °C/W - Junction-to-ambient thermal resistance confirms usable power dissipation of ~1.5 W without forced airflow. |
| VGS(th) | -0.4 to -1.0 V - Guaranteed turn-on with 1.8 V logic; ensures reliable operation across temperature and process variation. |
| Ciss | 3729 pF - Input capacitance defines gate drive energy and impacts switching speed in hard-switched applications. |
Pinout & Package
PowerPAK® 1212-8 is a leadless surface-mount package with 8 terminals, 1.07 mm height, and 3.30 mm × 3.30 mm footprint. The exposed copper drain pad occupies the bottom center and provides primary thermal path to PCB.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching. |
| 5 | Gate (G) | Single gate input; requires <57 nC charge for full enhancement; compatible with 1.8 V CMOS drivers. |
| 6, 7, 8 | Drain (D) | Three drain terminals connected to large bottom-side copper pad; primary thermal and current path to PCB plane. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables -1.8 V gate drive capability while maintaining <11 mΩ RDS(on), eliminating need for level shifters in low-voltage systems. |
| PowerPAK® 1212-8 package | Delivers 1.9 °C/W RthJC in 3.3 mm × 3.3 mm area-20× better thermal performance than TSSOP-8 and 40% smaller footprint. |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC; suitable for consumer electronics and medical portable devices with strict material compliance. |
| Low-profile 1.07 mm height | Enables use in ultra-thin smartphones, wearables, and hearing aids where Z-axis clearance is constrained to <1.2 mm. |
| Body diode trr = 48 ns | Supports high-frequency synchronous buck converters and reverse-polarity protection with minimal switching loss penalty. |
Applications
| USB Type-C Port Protection | Smartphone Battery Disconnect |
|---|---|
Use Scenario: Reverse-voltage and overcurrent protection for USB-C receptacles in mobile devices. IC Role / Device Role / Timing Role: P-channel high-side load switch controlling VBUS path between connector and system PMIC. Use Value: -20 V rating blocks accidental 20 V adapter misconnection; 0.0106 Ω RDS(on) limits voltage drop to <160 mV at 15 A, preserving USB PD compliance. |
Use Scenario: Isolating main Li-ion battery during charging, firmware update, or fault conditions in smartphones. IC Role / Device Role / Timing Role: High-side battery disconnect switch placed between battery anode and system power rail. Use Value: -1.0 V VGS(th) ensures full turn-on with 1.8 V baseband processor GPIO; 1.07 mm height fits under stacked display modules. |
| Wireless Earbud Charging Case | Portable Medical Glucose Monitor |
Use Scenario: Load switching for charging circuitry and battery-to-load power path in compact earbud cases. IC Role / Device Role / Timing Role: Dual-function switch managing both input charging FET and output battery discharge FET. Use Value: PowerPAK 1212-8's 3.3 mm × 3.3 mm size allows dual FET placement in <100 mm² PCB area; halogen-free construction meets IEC 60601-1 material requirements. |
Use Scenario: Precision power gating for sensor subsystems and Bluetooth radio to extend single-charge runtime. IC Role / Device Role / Timing Role: Low-leakage P-channel switch enabling sub-µA standby current when sensors are inactive. Use Value: IDSS ≤ -1 µA at -20 V ensures <100 nA system leakage; -0.4 V minimum VGS(th) guarantees robust turn-on even at cold temperatures (-20 °C). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7133DP-T1-GE3 | P-channel, -20 V, 0.0075 Ω RDS(on) @ -4.5 V, but in larger PowerPAK® SO-8 (5 mm × 6 mm) package. | Higher current handling (-25 A), but 2.5× larger footprint and 1.1 mm height-unsuitable for ultra-thin designs. | Select Si7133DP-T1-GE3 only when higher current (>16 A) and lower RDS(on) outweigh PCB area constraints. |
| DMN2011LFG-7 | P-channel, -20 V, 0.012 Ω RDS(on) @ -4.5 V, in 2 mm × 2 mm WDFN package with 0.65 mm height. | Smaller footprint and lower profile, but RthJA = 100 °C/W limits continuous current to ~9 A on FR4. | Choose DMN2011LFG-7 when board space is tighter than 3.3 mm × 3.3 mm and thermal budget permits higher junction rise. |
Compared with Si7133DP-T1-GE3 and DMN2011LFG-7, SI7123DN-T1-GE3 uniquely balances 3.3 mm × 3.3 mm footprint, 1.07 mm height, and -16 A capability with 0.0106 Ω on-resistance-making it optimal for mid-power portable applications where space, thermal, and drive-voltage constraints intersect.
Availability
SI7123DN-T1-GE3 is available at Aetrix Electronics and suitable for USB-C port protection, smartphone battery disconnect, and wireless earbud charging case designs requiring stable component supply, halogen-free compliance, and consistent thermal performance across production volumes.
Supply support for SI7123DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.
The Si7123DN product line targets portable electronics power management, delivering trench-based P-channel MOSFETs optimized for low-voltage gate drive, minimal PCB footprint, and high thermal efficiency in space-constrained battery systems.
FAQ
What is the maximum continuous drain current for SI7123DN-T1-GE3 at 70 °C ambient temperature?
The SI7123DN-T1-GE3 supports -12.8 A continuous drain current at TA = 70 °C on a 1" × 1" FR4 board. This derating reflects thermal limits imposed by RthJA = 65 °C/W and TJ(max) = 150 °C. At higher board copper area or with internal ground planes, current capability improves-verified in Vishay AN822 thermal characterization data for PowerPAK 1212-8.
Does SI7123DN-T1-GE3 support 1.8 V logic-level gate drive?
Yes, SI7123DN-T1-GE3 is specified for full enhancement at VGS = -1.8 V, with RDS(on) = 0.0189 Ω at -5 A. Its VGS(th) range of -0.4 V to -1.0 V ensures guaranteed turn-on with 1.8 V microcontroller outputs across temperature and process corners, eliminating need for gate drivers in most portable applications.
What is the thermal resistance from junction to case (RthJC) for SI7123DN-T1-GE3?
The SI7123DN-T1-GE3 has a typical RthJC of 1.9 °C/W and maximum of 2.4 °C/W, measured from junction to the exposed drain pad on the bottom of the PowerPAK 1212-8 package. This low value enables efficient heat transfer directly into the PCB copper, making it suitable for thermally demanding portable applications without external heatsinks.
Can SI7123DN-T1-GE3 be used in reverse-polarity protection circuits?
Yes, SI7123DN-T1-GE3 is commonly used in reverse-polarity protection due to its -20 V VDS rating and P-channel configuration. When placed in the high-side position, it blocks reverse voltage while introducing only 160 mV drop at 15 A (based on 0.0106 Ω RDS(on)), minimizing power loss and heat generation compared to diode-based solutions.
Is SI7123DN-T1-GE3 compatible with lead-free reflow soldering profiles?
Yes, SI7123DN-T1-GE3 is qualified for lead-free reflow per JEDEC J-STD-020, with peak temperature up to 260 °C for 20–40 seconds. Vishay specifies a maximum ramp-down rate of 6 °C/s and prohibits manual soldering with irons due to its leadless PowerPAK 1212-8 construction-reflow is the only recommended assembly method.
SI7123DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 10.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 10.6mOhm @ 15A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 90 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3729 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SI7123DN-T1-GE3 FAQ
1.How can I place an order for SI7123DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7123DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7123DN-T1-GE3 reliable?
The price and inventory of SI7123DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7123DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7123DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7123DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7123DN-T1-GE3?
SI7123DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7123DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7123DN-T1-GE3?
For technical support, including SI7123DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7123DN-T1-GE3 requirements.
6.How does Aetrix verify that SI7123DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7123DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7123DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7123DN-T1-GE3?
All SI7123DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7123DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7123DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7123DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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