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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7136DP-T1-E3

Name: SI7136DP-T1-E3
Brand: Vishay Siliconix
SKU: SI7136DP-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7136DP-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7136DP-T1-E3.pdf

Description:: MOSFET N-CH 20V 30A PPAK SO-8

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Product details

Overview

SI7136DP-T1-E3 from Vishay Siliconix is an N-channel 20-V (D-S) TrenchFET® Gen II Power MOSFET in PowerPAK SO-8 package, delivering 30 A continuous drain current at TC = 25 °C, R_DS(on) = 3.2 mΩ at V_GS = 10 V, and Q_g = 24.5 nC (typ.) at V_GS = 4.5 V. It serves as a low-side synchronous rectifier in high-efficiency DC/DC converters for notebook and server power stages.

For engineers reviewing the SI7136DP-T1-E3 datasheet, SI7136DP-T1-E3 pinout, SI7136DP-T1-E3 application, or SI7136DP-T1-E3 equivalent, key selection criteria include its ultra-low R_DS(on) at 4.5 V gate drive, 100 % UIS-tested ruggedness, halogen-free Pb-free construction, and compatibility with standard SO-8 PCB footprints while offering DPAK-level thermal performance.

Technical Context

This MOSFET employs high-density TrenchFET® Gen II technology to achieve optimized gate charge (Q_g) and ultra-low on-resistance - 3.2 mΩ at 10 V and 4.5 mΩ at 4.5 V - enabling high-current, low-voltage switching in compact space-constrained systems. Its 100 % R_g and 100 % UIS testing ensure gate robustness and avalanche reliability under transient stress.

The PowerPAK SO-8 package features an exposed copper drain pad on the bottom surface, providing a direct low-thermal-resistance path (R_thJC = 2.1 °C/W typ.) from junction to PCB, with footprint compatibility to standard SO-8 but superior thermal performance approaching that of DPAK. It supports reflow soldering per JEDEC J-STD-020 with peak temperature up to 255 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum drain-source blocking voltage; suitable for 12 V input rails and point-of-load applications.
R_DS(on)	3.2 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 18 A, critical for high-efficiency low-side switching.
I_D (continuous)	30 A @ T_C = 25 °C - Supports high-current power delivery in server VRMs and notebook CPU/GPU regulators.
Q_g	24.5 nC @ V_GS = 4.5 V - Optimized for 4.5 V gate drive from common controller ICs, reducing switching losses.
R_thJC	2.1 °C/W (typ.) - Enables efficient heat transfer to PCB copper, allowing >25 W power dissipation with minimal heatsinking.
Body diode V_SD	0.72 V @ I_S = 2.7 A - Low forward drop improves efficiency during dead-time conduction in synchronous buck topologies.
t_rr	43 ns (typ.) - Fast reverse recovery minimizes shoot-through risk and reduces EMI in high-frequency (>500 kHz) converters.

Pinout & Package

SI7136DP-T1-E3 is housed in a leadless PowerPAK SO-8 package (6.15 mm × 5.15 mm), featuring an exposed drain pad on the bottom surface for enhanced thermal conduction. The top-side pinout matches standard SO-8: pins 1–3 are source terminals, pin 4 is gate, and pins 5–8 are drain terminals - all electrically connected to the bottom drain pad.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source connections reduce package inductance and improve current sharing in high-di/dt operation.
4	Gate (G)	Single gate terminal with R_g = 0.8–1.2 Ω; optimized for fast turn-on/turn-off with minimal ringing.
5, 6, 7, 8	Drain (D)	Four drain terminals tied internally to large bottom-side copper pad - primary thermal and current path to PCB.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	4.5 mΩ enables efficient operation with 5 V or logic-level gate drivers without level-shifting circuitry.
100 % UIS tested	Guarantees single-pulse avalanche energy handling up to 45 mJ - critical for robustness in unregulated input conditions.
PowerPAK SO-8 thermal design	Exposes drain copper on bottom surface, achieving R_thJC = 2.1 °C/W - equivalent to DPAK, not standard SO-8.
Halogen-free & Pb-free	Complies with IEC 61249-2-21 and RoHS; no lead or brominated flame retardants in package or die attach.
Optimized Q_g/R_DS(on) ratio	24.5 nC @ 4.5 V delivers best-in-class figure-of-merit (Q_g × R_DS(on)) for 20 V synchronous rectifiers.

Applications

Server VRM Low-Side Switch	Notebook CPU Core Regulator
Use Scenario: High-current, high-frequency (≥600 kHz) synchronous buck converter supplying core voltage to dual-socket Xeon processors. IC Role / Device Role: Low-side power switch conducting up to 30 A continuous current during PWM duty cycle. Use Value: 3.2 mΩ R_DS(on) limits conduction loss to ≤1.8 W at 24 A, enabling >95 % efficiency at full load without forced air cooling.	Use Scenario: Compact 1–2 phase buck regulator powering mobile Intel Core i7/i9 CPUs in ultrabooks with strict height constraints. IC Role / Device Role: Low-side MOSFET in integrated power stage, driven by integrated PWM controller with 4.5 V gate output. Use Value: PowerPAK SO-8's 0.97–1.12 mm height and SO-8 footprint allow placement beneath CPU socket, saving board area vs. DPAK.
Workstation GPU Power Delivery	Industrial DC/DC Module
Use Scenario: Multi-phase VRM supplying 300+ W to discrete GPUs in CAD/workstation laptops with thermal headroom limitations. IC Role / Device Role: Synchronous rectifier operating at 12 V input, 0.8–1.2 V output, 500–800 kHz switching frequency. Use Value: 43 ns body diode t_rr and low Q_rr (37 nC) suppress voltage spikes and reduce EMI filtering requirements.	Use Scenario: Isolated 24 V to 5 V/3.3 V DC/DC module for industrial PLC I/O modules requiring long-term reliability and thermal stability. IC Role / Device Role: Low-side switch in non-isolated buck pre-regulator stage feeding isolated flyback or forward converter. Use Value: 100 % UIS testing and -55 °C to +150 °C operating range ensure field reliability under surge, overvoltage, and wide ambient conditions.

Server VRM Low-Side Switch

Notebook CPU Core Regulator

Use Scenario: High-current, high-frequency (≥600 kHz) synchronous buck converter supplying core voltage to dual-socket Xeon processors.

IC Role / Device Role: Low-side power switch conducting up to 30 A continuous current during PWM duty cycle.

Use Value: 3.2 mΩ R_DS(on) limits conduction loss to ≤1.8 W at 24 A, enabling >95 % efficiency at full load without forced air cooling.

Use Scenario: Compact 1–2 phase buck regulator powering mobile Intel Core i7/i9 CPUs in ultrabooks with strict height constraints.

IC Role / Device Role: Low-side MOSFET in integrated power stage, driven by integrated PWM controller with 4.5 V gate output.

Use Value: PowerPAK SO-8's 0.97–1.12 mm height and SO-8 footprint allow placement beneath CPU socket, saving board area vs. DPAK.

Workstation GPU Power Delivery

Industrial DC/DC Module

Use Scenario: Multi-phase VRM supplying 300+ W to discrete GPUs in CAD/workstation laptops with thermal headroom limitations.

IC Role / Device Role: Synchronous rectifier operating at 12 V input, 0.8–1.2 V output, 500–800 kHz switching frequency.

Use Value: 43 ns body diode t_rr and low Q_rr (37 nC) suppress voltage spikes and reduce EMI filtering requirements.

Use Scenario: Isolated 24 V to 5 V/3.3 V DC/DC module for industrial PLC I/O modules requiring long-term reliability and thermal stability.

IC Role / Device Role: Low-side switch in non-isolated buck pre-regulator stage feeding isolated flyback or forward converter.

Use Value: 100 % UIS testing and -55 °C to +150 °C operating range ensure field reliability under surge, overvoltage, and wide ambient conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 20-V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7137DP-T1-E3	Same die, higher R_DS(on) = 3.8 mΩ @ 10 V; identical PowerPAK SO-8 package and pinout.	Lower cost variant for less demanding thermal budgets where <5 % efficiency penalty is acceptable.	Select Si7137DP-T1-E3 only if system thermal margin allows higher conduction loss at peak load.
IRLHS6342TRPBF	20 V, 30 A, R_DS(on) = 3.3 mΩ @ 4.5 V; PQFN 3.3 × 3.3 mm package - smaller footprint but higher R_thJA (40 °C/W).	Better for ultra-compact designs; requires more aggressive PCB copper for thermal management.	Choose IRLHS6342TRPBF when board area is constrained and thermal design includes ≥1 oz inner-layer copper planes.

Compared with SI7136DP-T1-E3, Si7137DP-T1-E3 trades 19 % higher R_DS(on) for lower cost, while IRLHS6342TRPBF offers 30 % smaller footprint at the expense of 60 % higher junction-to-ambient thermal resistance - making SI7136DP-T1-E3 optimal for thermally demanding, high-current, medium-footprint applications.

Availability

SI7136DP-T1-E3 is available at Aetrix Electronics and suitable for notebook power supplies, server VRMs, and workstation GPU regulators requiring stable component supply, long-lifecycle support, and consistent Pb-free manufacturing compliance.

Supply support for SI7136DP-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SI7136DP-T1-E3 belongs to Vishay's TrenchFET® Gen II Power MOSFET product line, engineered specifically for high-current, low-voltage synchronous rectification in computing and communications power conversion.

FAQ

What is the maximum continuous drain current rating for SI7136DP-T1-E3 at 70 °C case temperature?

The SI7136DP-T1-E3 supports 30 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper layout per Vishay Application Note AN821 and adequate thermal relief - unlike many competitors, this current is maintained across the full 25–70 °C case temperature range without derating.

Does SI7136DP-T1-E3 require a special soldering profile due to its PowerPAK SO-8 package?

Yes - SI7136DP-T1-E3 uses a leadless PowerPAK SO-8 package with exposed copper drain pad. It requires a Pb-free reflow profile with peak temperature of 255 °C ± 5 °C, time above 217 °C between 60–150 s, and ramp-down rate ≤6 °C/s. Manual soldering with iron is not recommended per Vishay documentation (Doc. #73461).

Is SI7136DP-T1-E3 pin-compatible with standard SO-8 MOSFETs?

Yes - SI7136DP-T1-E3 uses the same 8-pin SO-8 footprint and pin assignment (G, S, S, S, D, D, D, D) as standard SO-8 packages. However, its drain terminals connect to a bottom-exposed copper pad, so PCB land patterns must accommodate the extended drain area per Vishay AN826 for optimal thermal performance.

What is the typical body diode reverse recovery time (t_rr) of SI7136DP-T1-E3 and why does it matter?

The SI7136DP-T1-E3 has t_rr = 43 ns (typ.) at I_F = 23 A, dI/dt = 100 A/µs, and T_J = 25 °C. This fast recovery minimizes voltage overshoot and switching losses during dead-time conduction in synchronous buck converters, directly improving efficiency and reducing EMI filter complexity.

Can SI7136DP-T1-E3 be used in avalanche-mode applications?

Yes - SI7136DP-T1-E3 is 100 % UIS (Unclamped Inductive Switching) tested with guaranteed single-pulse avalanche energy E_AS = 45 mJ and I_AS = 30 A. This makes it suitable for applications involving inductive load switching or transient overvoltage events where controlled avalanche operation is required for system protection.

SI7136DP-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.2mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 78 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3380 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 39W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7136DP-T1-E3 FAQ

1.How can I place an order for SI7136DP-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7136DP-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7136DP-T1-E3 reliable?

The price and inventory of SI7136DP-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7136DP-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI7136DP-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7136DP-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7136DP-T1-E3?

SI7136DP-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7136DP-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7136DP-T1-E3?

For technical support, including SI7136DP-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7136DP-T1-E3 requirements.

6.How does Aetrix verify that SI7136DP-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI7136DP-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7136DP-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI7136DP-T1-E3?

All SI7136DP-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7136DP-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7136DP-T1-E3 part is unused and in its original packaging.

Return procedure for SI7136DP-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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