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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7136DP-T1-GE3

Name: SI7136DP-T1-GE3
Brand: Vishay Siliconix
SKU: SI7136DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7136DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7136DP-T1-GE3.pdf

Description:: MOSFET N-CH 20V 30A PPAK SO-8

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Product details

Overview

SI7136DP-T1-GE3 from Vishay Siliconix is an N-channel 20-V TrenchFET® Gen II power MOSFET in PowerPAK SO-8 package, delivering 30 A continuous drain current at TC = 25 °C, RDS(on) of 3.2 mΩ at VGS = 10 V and 4.5 mΩ at VGS = 4.5 V, with 24.5 nC total gate charge - optimized for low-side DC/DC conversion in notebook, server, and workstation power stages.

For engineers reviewing the SI7136DP-T1-GE3 datasheet, SI7136DP-T1-GE3 pinout, SI7136DP-T1-GE3 application, or SI7136DP-T1-GE3 equivalent, key selection criteria include its ultra-low on-resistance, 100 % UIS-tested ruggedness, halogen-free construction per IEC 61249-2-21, and compatibility with standard SO-8 PCB footprints while offering DPAK-level thermal performance (RthJC = 2.1 °C/W).

Technical Context

This device uses high-density TrenchFET® Gen II technology to achieve ultra-low RDS(on) without sacrificing switching speed - evidenced by Qg = 24.5 nC (at VGS = 4.5 V) and fast turn-off delay (td(off) = 30–55 ns). Its gate threshold voltage (VGS(th) = 1.0–3.0 V) ensures reliable enhancement-mode operation across temperature.

The PowerPAK SO-8 package features exposed copper drain pads on the bottom surface for direct thermal conduction to the PCB, enabling junction-to-case thermal resistance as low as 2.1 °C/W and eliminating reliance on leadframe heat paths - a critical advantage over legacy SO-8 packages in high-current, space-constrained applications.

Key Specifications

Parameter	Value and Actual Design Meaning
VDS	20 V - Maximum drain-source blocking voltage; suitable for 12-V input rail systems with margin.
RDS(on)	3.2 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 18 A, critical for high-efficiency synchronous buck stages.
ID (continuous)	30 A @ TC = 25 °C - Sustains high pulsed load currents typical in CPU/GPU VRMs without derating.
Qg	24.5 nC @ VGS = 4.5 V - Optimized for 5-V gate drive; reduces driver power loss and enables faster switching than higher-Qg alternatives.
RthJC	2.1 °C/W (typ.) - Matches DPAK thermal performance; allows direct mounting to copper pour for effective heatsinking without external heatsinks.
UIS Tested	100 % tested - Guarantees ruggedness against inductive switching stress in DC/DC converters without snubbers.
Halogen-free	Complies with IEC 61249-2-21 - Meets RoHS+ requirements for environmentally sensitive end equipment.

Pinout & Package

SI7136DP-T1-GE3 is housed in a leadless PowerPAK SO-8 package (5.15 mm × 6.15 mm footprint), identical in outline and pin configuration to standard SO-8 but with exposed drain copper on the bottom for enhanced thermal transfer. The package is halogen-free and Pb-free.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Common source connection for internal parallel die; low-inductance return path for high di/dt switching.
5, 6, 7, 8	Drain (D)	Exposed copper drain pad on bottom surface; primary thermal and current path to PCB copper pour.
G (Pin 3 side, top-side marking)	Gate (G)	Single top-side gate terminal; optimized layout minimizes gate loop inductance for stable 1-MHz+ operation.

Key Features

Feature	Design Value
Ultra-low RDS(on)	3.2 mΩ @ 10 V - Reduces conduction losses by >40 % vs. standard SO-8 MOSFETs at same current density.
Qg-optimized design	24.5 nC @ 4.5 V - Enables efficient 5-V gate driving with minimal driver IC power dissipation.
100 % Rg tested	0.8–1.2 Ω gate resistance - Ensures consistent switching timing and eliminates need for external gate resistors in most designs.
100 % UIS tested	30 A avalanche current, 45 mJ single-pulse energy - Validates robustness under worst-case inductive turn-off without external protection.
PowerPAK SO-8 thermal architecture	RthJC = 2.1 °C/W - Delivers DPAK-equivalent thermal performance in SO-8 footprint, enabling board-space savings without thermal penalty.

Applications

Server VRM Low-Side Switch	Notebook CPU Core Power Stage
Use Scenario: High-current, high-frequency synchronous buck converter supplying core voltage to dual-socket Xeon processors. IC Role / Device Role / Timing Role: Low-side power switch handling up to 30 A continuous current with <100 ns switching transitions. Use Value: 3.2 mΩ RDS(on) limits conduction loss to ≤1.7 W at 23 A, enabling >95 % efficiency at 12 V input while maintaining TJ < 110 °C on 2-layer PCB.	Use Scenario: Compact, thermally constrained 1-phase or 2-phase VRM powering Intel Core i7/i9 mobile CPUs in ultrabooks. IC Role / Device Role / Timing Role: Low-side FET operating at 500 kHz–1 MHz with 5-V gate drive from integrated controller. Use Value: 24.5 nC Qg at 4.5 V reduces gate drive loss by 35 % vs. comparable SO-8 MOSFETs, extending battery life and easing thermal management in thin chassis.
Workstation GPU Power Delivery	High-Density DC/DC Module
Use Scenario: Multi-phase power stage for NVIDIA RTX-class GPUs requiring >40 A per phase in limited board area. IC Role / Device Role / Timing Role: Low-side switch sharing current across parallel devices with tight RDS(on) matching (±15 %). Use Value: 100 % UIS testing ensures reliability during GPU load transients exceeding 100 A/µs, preventing catastrophic failure during gaming or compute workloads.	Use Scenario: Embedded 12 V-to-1 V point-of-load module for FPGA or ASIC power rails in telecom infrastructure. IC Role / Device Role / Timing Role: Primary low-side switch in compact, shielded module with integrated inductor and controller. Use Value: PowerPAK SO-8's 2.1 °C/W RthJC allows full 30 A rating with only 25 mm² of 2-oz copper, eliminating need for thermal vias or external heatsinks in sealed modules.

Server VRM Low-Side Switch

Notebook CPU Core Power Stage

Use Scenario: High-current, high-frequency synchronous buck converter supplying core voltage to dual-socket Xeon processors.

IC Role / Device Role / Timing Role: Low-side power switch handling up to 30 A continuous current with <100 ns switching transitions.

Use Value: 3.2 mΩ RDS(on) limits conduction loss to ≤1.7 W at 23 A, enabling >95 % efficiency at 12 V input while maintaining TJ < 110 °C on 2-layer PCB.

Use Scenario: Compact, thermally constrained 1-phase or 2-phase VRM powering Intel Core i7/i9 mobile CPUs in ultrabooks.

IC Role / Device Role / Timing Role: Low-side FET operating at 500 kHz–1 MHz with 5-V gate drive from integrated controller.

Use Value: 24.5 nC Qg at 4.5 V reduces gate drive loss by 35 % vs. comparable SO-8 MOSFETs, extending battery life and easing thermal management in thin chassis.

Workstation GPU Power Delivery

High-Density DC/DC Module

Use Scenario: Multi-phase power stage for NVIDIA RTX-class GPUs requiring >40 A per phase in limited board area.

IC Role / Device Role / Timing Role: Low-side switch sharing current across parallel devices with tight RDS(on) matching (±15 %).

Use Value: 100 % UIS testing ensures reliability during GPU load transients exceeding 100 A/µs, preventing catastrophic failure during gaming or compute workloads.

Use Scenario: Embedded 12 V-to-1 V point-of-load module for FPGA or ASIC power rails in telecom infrastructure.

IC Role / Device Role / Timing Role: Primary low-side switch in compact, shielded module with integrated inductor and controller.

Use Value: PowerPAK SO-8's 2.1 °C/W RthJC allows full 30 A rating with only 25 mm² of 2-oz copper, eliminating need for thermal vias or external heatsinks in sealed modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7850DP-T1-GE3	RDS(on) = 2.3 mΩ @ 10 V; higher Qg = 34 nC; same PowerPAK SO-8 package.	Better conduction loss but slower switching; suited for lower-frequency, higher-current VRMs where gate drive capability permits.	Select Si7850DP-T1-GE3 when minimizing conduction loss dominates over switching loss and gate driver can support >30 nC.
IRF7478PBF	Standard SO-8 package; RDS(on) = 4.5 mΩ @ 10 V; RthJC = 16 °C/W; no UIS testing.	Higher thermal resistance requires larger copper area or forced cooling; lacks ruggedness validation for transient-heavy loads.	Choose IRF7478PBF only for cost-sensitive, low-power (<15 A), non-critical applications where thermal headroom is ample.

Compared with Si7850DP-T1-GE3, SI7136DP-T1-GE3 trades 0.9 mΩ higher RDS(on) for 9.5 nC lower Qg - favoring high-frequency, gate-drive-limited designs. Against IRF7478PBF, SI7136DP-T1-GE3 delivers 3× better thermal resistance and guaranteed avalanche ruggedness, enabling smaller, more reliable power stages.

Availability

SI7136DP-T1-GE3 is available at Aetrix Electronics and suitable for notebook, server, and workstation power delivery applications requiring stable component supply, long-term lifecycle support, and halogen-free compliance.

Supply support for SI7136DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SI7136DP-T1-GE3 belongs to Vishay's TrenchFET® Gen II Power MOSFET family, engineered specifically for high-current, high-frequency low-side switching in computing and communications power supplies.

FAQ

What is the maximum continuous drain current rating for SI7136DP-T1-GE3 at 70 °C case temperature?

The SI7136DP-T1-GE3 supports 30 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is sustained due to its low RDS(on) and efficient PowerPAK SO-8 thermal path, making it suitable for thermally demanding VRM phases where case temperatures routinely exceed 60 °C.

Does SI7136DP-T1-GE3 require a custom PCB land pattern, or is it compatible with standard SO-8 footprints?

SI7136DP-T1-GE3 is fully compatible with standard SO-8 land patterns - its PowerPAK SO-8 package maintains identical outline and pin spacing. However, optimal thermal performance requires extending the drain copper area beyond the standard pad; Vishay recommends ≥0.3 in² of spreading copper for best RthJA results.

What does "100 % UIS tested" mean for SI7136DP-T1-GE3, and how does it benefit my design?

"100 % UIS tested" means every SI7136DP-T1-GE3 unit undergoes individual Unclamped Inductive Switching stress test (IAS = 30 A, EAS = 45 mJ). This guarantees ruggedness against voltage spikes during turn-off in inductive loads - eliminating need for external snubbers or overdesign in DC/DC converters and improving field reliability.

Can SI7136DP-T1-GE3 be used with 5-V gate drive in a synchronous buck converter?

Yes - SI7136DP-T1-GE3 is explicitly optimized for 4.5–5 V gate drive, with RDS(on) = 4.5 mΩ at VGS = 4.5 V and Qg = 24.5 nC (typ.). Its 1.0–3.0 V VGS(th) ensures strong enhancement-mode turn-on, and 100 % Rg testing (0.8–1.2 Ω) provides predictable switching timing with common 5-V controllers.

How does the thermal performance of SI7136DP-T1-GE3 compare to a traditional SO-8 MOSFET?

SI7136DP-T1-GE3 achieves RthJC = 2.1 °C/W (typ.), matching DPAK performance and outperforming standard SO-8 MOSFETs (RthJC ≈ 16 °C/W) by ~87 %. On a 1" × 1" FR4 board, this translates to ~40 °C lower junction temperature at 2.7 W dissipation - directly preserving RDS(on) stability and enabling higher current density.

SI7136DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.2mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 78 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3380 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 39W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7136DP-T1-GE3 FAQ

1.How can I place an order for SI7136DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7136DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7136DP-T1-GE3 reliable?

The price and inventory of SI7136DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7136DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI7136DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7136DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7136DP-T1-GE3?

SI7136DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7136DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7136DP-T1-GE3?

For technical support, including SI7136DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7136DP-T1-GE3 requirements.

6.How does Aetrix verify that SI7136DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI7136DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7136DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI7136DP-T1-GE3?

All SI7136DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7136DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7136DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SI7136DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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