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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7138DP-T1-E3

Name: SI7138DP-T1-E3
Brand: Vishay Siliconix
SKU: SI7138DP-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7138DP-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7138DP-T1-E3.pdf

Description:: MOSFET N-CH 60V 30A PPAK SO-8

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Product details

Overview

SI7138DP-T1-E3 from Vishay Siliconix is an N-channel 60 V, 30 A power MOSFET in PowerPAK® SO-8 package, featuring R_DS(on) = 7.8 mΩ at V_GS = 10 V, Q_gd = 11 nC, and 100 % R_g and avalanche tested - optimized for primary-side switching in high-efficiency DC-DC converters.

For engineers reviewing the SI7138DP-T1-E3 datasheet, SI7138DP-T1-E3 pinout, SI7138DP-T1-E3 application, or SI7138DP-T1-E3 equivalent, key selection criteria include low gate-drain charge for reduced switching loss, thermal resistance R_thJC = 1.0 °C/W for high-power density designs, and Pb-free, halogen-free compliance per IEC 61249-2-21 and RoHS Directive 2002/95/EC.

Technical Context

This MOSFET employs a trench-gate silicon process with reduced Q_gd to minimize Miller plateau time and improve hard-switching efficiency. Its fast turn-on delay (25 ns @ V_GEN = 10 V) and low C_iss (6900 pF) support high-frequency operation up to 1 MHz in synchronous buck and LLC resonant topologies.

The device integrates a robust body diode with t_rr = 45–70 ns and Q_rr = 80–120 nC, enabling reliable freewheeling in continuous conduction mode. Thermal design is supported by validated junction-to-case resistance (R_thJC ≤ 1.5 °C/W) and steady-state power dissipation of 96 W at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - supports input rails up to 48 V nominal with 20 % margin for transients in telecom and server power supplies
R_DS(on)	7.8 mΩ @ V_GS = 10 V - enables <1.5 W conduction loss at 19.7 A, critical for >95 % efficiency targets
Q_gd	11 nC - reduces Miller-induced switching delay and dv/dt-induced false turn-on risk in high-side configurations
I_D	30 A (T_C = 25 °C) - package-limited continuous current suitable for 100–200 W point-of-load stages
R_thJC	1.0 °C/W (typ.) - allows direct heatsink mounting for thermal management without PCB copper area dependency
E_AS	93 mJ - withstands single-pulse inductive energy in primary-switch fault conditions without failure

Pinout & Package

SI7138DP-T1-E3 uses the leadless PowerPAK® SO-8 package (6.15 mm × 5.15 mm), with exposed drain pads on the bottom for low thermal resistance and high-current capability. The package is RoHS-compliant and halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal accepting 0–10 V logic-level drive; R_g = 0.6–0.9 Ω ensures predictable gate timing
S	Source	Reference node for gate drive and current sensing; tied to power ground in low-side configurations
D	Drain	Main power output node; four parallel drain terminals provide low-inductance, high-current path to PCB plane

Key Features

Feature	Design Value
Reduced Q_gd	11 nC enables faster voltage transition across V_DS, lowering switching losses in hard-switched SMPS
100 % R_g tested	Ensures consistent gate resistance across production lots, critical for accurate gate driver sizing and EMI control
100 % avalanche tested	Guarantees ruggedness against inductive kickback in flyback and forward converter primary switches
Low R_thJA	18 °C/W (typ.) allows operation at 5.4 W ambient power dissipation without forced air or heatsink

Applications

Server VRM Primary Switch	Telecom DC-DC Converter
Use Scenario: High-current, high-frequency primary switch in 48 V input, 12 V output multiphase buck converter for AI accelerator cards. IC Role / Device Role / Timing Role: N-channel power switch operating at 500 kHz–1 MHz with synchronous rectification. Use Value: Low Q_gd and 7.8 mΩ R_DS(on) reduce total switching + conduction loss to <2.1 W per phase at 30 A, enabling 96.2 % peak efficiency.	Use Scenario: Primary-side switch in isolated 48 V–12 V DC-DC module for 5G base station power distribution units. IC Role / Device Role / Timing Role: Fast-switching MOSFET in active-clamp forward topology with 300 ns dead-time constraints. Use Value: 25 ns turn-on delay and 12 ns rise time meet tight timing budgets while maintaining <1.8 V overshoot during load transients.
Industrial PLC Power Supply	EV On-Board Charger Auxiliary Stage
Use Scenario: Main switch in 24 V input, 5 V/3.3 V auxiliary supply powering microcontrollers and I/O drivers in factory automation controllers. IC Role / Device Role / Timing Role: High-reliability N-channel switch handling 15 A continuous load with 80 A surge capability. Use Value: 93 mJ single-pulse avalanche energy rating protects against inductive load dump events without external snubbers.	Use Scenario: Secondary-side synchronous rectifier in 400 V–12 V isolated DC-DC stage of bidirectional OBC for Level 2 charging. IC Role / Device Role / Timing Role: Low-V_DS MOSFET used in synchronous rectification with body diode reverse recovery t_rr = 45 ns. Use Value: Fast t_rr and low Q_rr (80 nC) minimize cross-conduction loss and thermal stress during zero-voltage switching transitions.

Server VRM Primary Switch

Telecom DC-DC Converter

Use Scenario: High-current, high-frequency primary switch in 48 V input, 12 V output multiphase buck converter for AI accelerator cards.

IC Role / Device Role / Timing Role: N-channel power switch operating at 500 kHz–1 MHz with synchronous rectification.

Use Value: Low Q_gd and 7.8 mΩ R_DS(on) reduce total switching + conduction loss to <2.1 W per phase at 30 A, enabling 96.2 % peak efficiency.

Use Scenario: Primary-side switch in isolated 48 V–12 V DC-DC module for 5G base station power distribution units.

IC Role / Device Role / Timing Role: Fast-switching MOSFET in active-clamp forward topology with 300 ns dead-time constraints.

Use Value: 25 ns turn-on delay and 12 ns rise time meet tight timing budgets while maintaining <1.8 V overshoot during load transients.

Industrial PLC Power Supply

EV On-Board Charger Auxiliary Stage

Use Scenario: Main switch in 24 V input, 5 V/3.3 V auxiliary supply powering microcontrollers and I/O drivers in factory automation controllers.

IC Role / Device Role / Timing Role: High-reliability N-channel switch handling 15 A continuous load with 80 A surge capability.

Use Value: 93 mJ single-pulse avalanche energy rating protects against inductive load dump events without external snubbers.

Use Scenario: Secondary-side synchronous rectifier in 400 V–12 V isolated DC-DC stage of bidirectional OBC for Level 2 charging.

IC Role / Device Role / Timing Role: Low-V_DS MOSFET used in synchronous rectification with body diode reverse recovery t_rr = 45 ns.

Use Value: Fast t_rr and low Q_rr (80 nC) minimize cross-conduction loss and thermal stress during zero-voltage switching transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 8.5 mΩ @ 10 V; Q_gd = 14 nC; TO-252 package	Higher thermal resistance (R_thJC = 3.0 °C/W); requires larger PCB copper area	Prefer SI7138DP-T1-E3 for space-constrained, high-power-density designs requiring lower Q_gd and better thermal performance
DMN6070LSD-13	R_DS(on) = 7.0 mΩ @ 10 V; Q_gd = 13.5 nC; dual-N SO-8 package	Dual configuration increases layout complexity; no avalanche rating published	Choose SI7138DP-T1-E3 when single-device reliability, guaranteed avalanche capability, and lower Q_gd are required for primary-side switching

Compared with IRF7470PBF and DMN6070LSD-13, SI7138DP-T1-E3 delivers superior switching efficiency via lowest Q_gd, highest avalanche ruggedness (93 mJ), and best thermal interface (R_thJC = 1.0 °C/W), making it optimal for high-reliability, high-frequency primary-side power conversion.

Availability

SI7138DP-T1-E3 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial PLC power supplies requiring stable component supply, long-term lifecycle support, and full traceability.

Supply support for SI7138DP-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The Si7138DP product line targets high-efficiency, high-reliability power conversion in computing, communications, and industrial systems - engineered for minimal switching loss, robust avalanche behavior, and thermally optimized packaging.

FAQ

What is the maximum continuous drain current rating for SI7138DP-T1-E3 at 70 °C case temperature?

The SI7138DP-T1-E3 supports 30 A continuous drain current at T_C = 70 °C, as specified in its Absolute Maximum Ratings table. This rating reflects package-limited current handling under steady-state thermal conditions and is independent of PCB layout assumptions. The SI7138DP-T1-E3 maintains this current capability due to its low R_thJC of 1.0 °C/W and robust PowerPAK® SO-8 construction.

Does SI7138DP-T1-E3 have a specified body diode reverse recovery time (t_rr)?

Yes, the SI7138DP-T1-E3 specifies t_rr = 45–70 ns under test conditions of I_F = 10 A, dI/dt = 100 A/µs, and T_J = 25 °C. This value is measured directly on the integrated body diode and confirms suitability for synchronous rectification and freewheeling in high-frequency converters. The SI7138DP-T1-E3 data sheet also provides Q_rr = 80–120 nC for precise loss modeling.

Is SI7138DP-T1-E3 compatible with standard SO-8 reflow profiles?

Yes, SI7138DP-T1-E3 is qualified for standard lead-free reflow per IPC/JEDEC J-STD-020, with peak temperature up to 260 °C. As a leadless PowerPAK® SO-8 device, it requires controlled solder paste volume and stencil design to ensure reliable bottom-side interconnection - the exposed copper drain pad does not require a visible fillet. The SI7138DP-T1-E3 datasheet references profile document PPG-73461 for implementation guidance.

What is the gate threshold voltage range for SI7138DP-T1-E3?

The SI7138DP-T1-E3 has a gate-source threshold voltage V_GS(th) ranging from 2.0 V to 4.0 V at I_D = 250 µA and T_J = 25 °C. This range ensures reliable turn-on with standard 3.3 V or 5 V gate drivers while maintaining noise immunity. The SI7138DP-T1-E3 exhibits a negative temperature coefficient (–8.4 mV/°C), meaning V_GS(th) decreases as junction temperature rises - a key consideration for thermal stability in high-power operation.

How is avalanche ruggedness verified for SI7138DP-T1-E3?

The SI7138DP-T1-E3 undergoes 100 % production avalanche testing per JEDEC JESD22-A110, with single-pulse energy E_AS = 93 mJ at L = 0.1 mH and I_AS = 43 A. This validation ensures each unit can safely absorb inductive energy without parametric shift or failure - critical for primary-side switching in flyback and forward converters. The SI7138DP-T1-E3 datasheet explicitly states "100 % avalanche tested" as a key feature.

SI7138DP-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 7.8mOhm @ 19.7A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 135 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6900 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 5.4W (Ta), 96W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7138DP-T1-E3 FAQ

1.How can I place an order for SI7138DP-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7138DP-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7138DP-T1-E3 reliable?

The price and inventory of SI7138DP-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7138DP-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI7138DP-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7138DP-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7138DP-T1-E3?

SI7138DP-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7138DP-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7138DP-T1-E3?

For technical support, including SI7138DP-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7138DP-T1-E3 requirements.

6.How does Aetrix verify that SI7138DP-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI7138DP-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7138DP-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI7138DP-T1-E3?

All SI7138DP-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7138DP-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7138DP-T1-E3 part is unused and in its original packaging.

Return procedure for SI7138DP-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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