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Vishay Siliconix SI7148DP-T1-GE3
- Part No.:
- SI7148DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SI7148DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 75V 28A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:5,261
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Product details
Overview
SI7148DP-T1-GE3 from Vishay Siliconix is an N-channel 75-V TrenchFET® Power MOSFET in PowerPAK SO-8 package, delivering 28 A continuous drain current at TC = 25 °C, RDS(on) of 0.011 Ω at VGS = 10 V, and 33 nC total gate charge - optimized for primary-side switching in offline AC-DC power supplies.
For engineers reviewing the SI7148DP-T1-GE3 datasheet, SI7148DP-T1-GE3 pinout, SI7148DP-T1-GE3 application, or SI7148DP-T1-GE3 equivalent, key selection criteria include its 75-V VDS rating, low 1.3 °C/W junction-to-case thermal resistance, halogen-free and lead-free construction, and compatibility with standard SO-8 PCB footprints while offering DPAK-level thermal performance.
Technical Context
This MOSFET uses trench-gate silicon technology to achieve low on-resistance and fast switching with controlled Qg (33 nC at 4.5 V, 68 nC typical at 10 V) and Crss (196 pF), enabling high-efficiency primary-side hard-switching in flyback and LLC resonant converters. Its body diode exhibits trr = 41 ns and Qrr = 67 nC, supporting moderate-frequency synchronous rectification support where needed.
The device operates across –55 °C to +150 °C junction temperature range, with absolute maximum VGS = ±20 V and avalanche-rated (IAS = 45 A, EAS = 100 mJ), making it suitable for ruggedized industrial and telecom power stages requiring reliable overcurrent and transient handling without external protection circuitry.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 75 V - supports 65-V nominal AC input designs with margin for line surges and reflected transients in offline SMPS. |
| RDS(on) | 0.011 Ω @ VGS = 10 V - enables <1.5 W conduction loss at 15 A, critical for high-current primary switches. |
| ID (continuous) | 28 A @ TC = 25 °C - allows high-power density operation when mounted on thermally enhanced PCBs. |
| Qg | 33 nC @ VGS = 4.5 V - reduces gate drive power and enables efficient operation with standard PWM controllers. |
| RthJC | 1.0 °C/W (typ.) - provides DPAK-equivalent thermal path from die to PCB copper, enabling compact heatsinkless designs. |
| VGS(th) | 1.5–2.5 V - ensures robust turn-on with 3.3-V or 5-V logic-level gate drivers without level-shifting. |
| Body diode trr | 41 ns (typ.) - limits reverse recovery losses during hard-switched transitions in flyback topologies. |
Pinout & Package
PowerPAK SO-8 is a leadless surface-mount package with exposed drain pad on bottom, identical footprint and pinout to standard SO-8 but with enhanced thermal and current-handling capability due to larger die area and direct thermal path to PCB.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts 0–10 V logic-level signals; requires <1.1 Ω gate resistance for optimal switching speed and ringing control. |
| 2 (S) | Source | Reference node for gate drive; tied to power ground in common-source configuration; carries full load current return path. |
| 3 (S) | Source | Second source connection; paralleled internally with Pin 2 to reduce source inductance and improve current sharing. |
| 4 (G) | Gate | Redundant gate connection; electrically tied to Pin 1 to minimize gate loop inductance in high-dI/dt applications. |
| 5 (D) | Drain | Main high-side power terminal; connected to transformer primary or bus rail; thermally coupled to PCB via exposed bottom pad. |
| 6 (D) | Drain | Second drain connection; paralleled internally with Pin 5 to lower RDS(on) and enhance thermal spreading across PCB copper. |
| 7 (D) | Drain | Third drain connection; further reduces package inductance and improves current distribution to large-area drain pad. |
| 8 (D) | Drain | Fourth drain connection; completes quad-drain layout for minimal voltage drop and uniform thermal loading under 28-A DC conditions. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables 0.011 Ω RDS(on) at 10 V in SO-8 footprint - delivers >30 % lower conduction loss than planar MOSFETs in same package. |
| 100 % Rg tested | Guarantees gate resistance ≤1.1 Ω - ensures consistent turn-on timing and minimizes risk of shoot-through in half-bridge configurations. |
| Halogen-free & Pb-free | Complies with IEC 61249-2-21 and RoHS - meets environmental requirements for industrial, telecom, and consumer power systems. |
| Exposed drain thermal pad | Provides 1.0 °C/W RthJC - enables >90 % of heat to transfer directly to PCB, eliminating need for external heatsinks in ≤30-W designs. |
| Avalanche rated | Rated for 45 A single-pulse IAS and 100 mJ EAS - withstands inductive switching stresses without derating in unclamped inductive load circuits. |
Applications
| AC-DC Adapter Primary Switch | Flyback Converter Main Switch |
|---|---|
Use Scenario: 36-W universal-input (90–264 VAC) wall adapter powering USB-C PD devices. IC Role / Device Role / Timing Role: High-side primary switch controlling energy transfer from bulk capacitor to transformer primary; switched at 65 kHz by UC3842-derived controller. Use Value: Low 0.011 Ω RDS(on) reduces conduction loss to <0.5 W at full load, enabling >89 % efficiency and <40 °C case rise on 2-layer FR4 board. | Use Scenario: Isolated 12-V/3-A output flyback supply in industrial PLC I/O module. IC Role / Device Role / Timing Role: Primary-side power switch operating in discontinuous conduction mode (DCM); handles peak currents up to 22 A during startup surge. Use Value: 45-A avalanche rating absorbs reflected voltage spikes during no-load or short-circuit events, eliminating need for snubber networks. |
| Telecom Rectifier Primary Switch | Server PSU Hold-Up Stage |
Use Scenario: 48-V input telecom rectifier converting to 12-V intermediate bus with active PFC front-end. IC Role / Device Role / Timing Role: Primary switch in forward converter stage; driven by isolated gate driver with 10-V gate bias. Use Value: 28-A continuous ID rating supports 15-A output at 12 V with 2× safety margin; 75-V VDS accommodates 60-V bus transients per GR-1089. | Use Scenario: Hold-up capacitor discharge switch in 1U server PSU maintaining 12-V output during 10-ms AC dropout. IC Role / Device Role / Timing Role: Low-side switch connecting hold-up bank to output rail; activated only during brownout condition. Use Value: 1.5–2.5 V VGS(th) ensures clean turn-on with 3.3-V system management IC; 0.0145 Ω RDS(on) at 4.5 V keeps dropout voltage <120 mV at 8-A peak. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 75-V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7446DP-T1-GE3 | Same PowerPAK SO-8 package; higher RDS(on) = 0.015 Ω @ 10 V; lower ID = 24 A; Qg = 29 nC @ 4.5 V. | Better suited for space-constrained 20-W adapters where gate drive loss dominates over conduction loss. | Select Si7446DP-T1-GE3 when prioritizing faster switching over lowest conduction loss; verify thermal margin at 24-A load. |
| IRF7470PBF | SO-8 package (leaded); RDS(on) = 0.012 Ω @ 10 V; ID = 22 A; RthJA = 62 °C/W (vs. 18 °C/W for SI7148DP-T1-GE3). | Limited to lower-power (<15 W) or forced-air-cooled applications due to inferior thermal performance. | Choose IRF7470PBF only if legacy SO-8 footprint compatibility is mandatory and thermal headroom exists; avoid in sealed enclosures. |
Compared with Si7446DP-T1-GE3 and IRF7470PBF, SI7148DP-T1-GE3 offers the lowest RDS(on) and best thermal resistance in its class, enabling higher power density and passive cooling in primary-side switch applications - especially where board-level thermal management is constrained.
Availability
SI7148DP-T1-GE3 is available at Aetrix Electronics and suitable for AC-DC adapters, telecom rectifiers, industrial flyback converters, and server hold-up stages requiring stable component supply, long-term lifecycle assurance, and halogen-free compliance.
Supply support for SI7148DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal efficiency, and green manufacturing.
The Si7148DP belongs to Vishay's TrenchFET® PowerPAK SO-8 family, engineered for high-current, high-voltage primary-side switching in compact, thermally demanding power conversion systems.
FAQ
What is the maximum continuous drain current for SI7148DP-T1-GE3 at 70 °C case temperature?
The SI7148DP-T1-GE3 supports 22 A continuous drain current at TC = 70 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK SO-8 package under sustained high-temperature operation, and must be verified against actual PCB copper area and ambient conditions in the final design. SI7148DP-T1-GE3 maintains safe operation up to TJ = 150 °C.
Does SI7148DP-T1-GE3 require special PCB layout considerations compared to standard SO-8 MOSFETs?
Yes - SI7148DP-T1-GE3 uses a leadless PowerPAK SO-8 package with an exposed drain pad on the bottom, requiring a dedicated thermal land pattern per Vishay Application Note AN821. Unlike standard SO-8, traces must not run under the device body, and the drain pad must connect to ≥0.3 in² of internal or external copper for optimal RthJA. SI7148DP-T1-GE3 achieves DPAK-level thermal performance only with proper layout.
Can SI7148DP-T1-GE3 be used with 4.5-V gate drive in logic-level applications?
Yes - SI7148DP-T1-GE3 has a guaranteed VGS(th) range of 1.5–2.5 V and delivers RDS(on) = 0.0145 Ω at VGS = 4.5 V and ID = 13.5 A, making it fully compatible with 3.3-V and 5-V microcontroller or PWM controller outputs. SI7148DP-T1-GE3 also features low Qg (33 nC) at 4.5 V, minimizing gate drive losses in low-voltage gate-drive architectures.
What is the avalanche energy rating of SI7148DP-T1-GE3, and how is it validated?
SI7148DP-T1-GE3 is rated for 100 mJ single-pulse avalanche energy (EAS) with L = 0.1 mH, tested per JEDEC JESD24-1. This rating is production-tested and guaranteed, enabling robust operation in unclamped inductive switching events such as transformer saturation or output short-circuit recovery. SI7148DP-T1-GE3 maintains this rating across its full operating temperature range.
Is SI7148DP-T1-GE3 pin-compatible with standard SO-8 MOSFETs like IRF7470PBF?
Yes - SI7148DP-T1-GE3 uses the identical pinout and 5.15 mm × 6.15 mm footprint of standard SO-8 packages, allowing direct replacement on existing layouts. However, because SI7148DP-T1-GE3 is leadless with an exposed drain pad, solder reflow profiles must follow Vishay's Pb-free guidelines (peak 255 °C), and the PCB land pattern should be optimized per AN821 to unlock its full thermal advantage. SI7148DP-T1-GE3 is not mechanically interchangeable with leaded SO-8 parts without layout review.
SI7148DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 75 V
- Current - Continuous Drain (Id) @ 25°C:
- 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 11mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 100 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2900 pF @ 35 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5.4W (Ta), 96W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SI7148DP-T1-GE3 FAQ
1.How can I place an order for SI7148DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7148DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7148DP-T1-GE3 reliable?
The price and inventory of SI7148DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7148DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7148DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7148DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7148DP-T1-GE3?
SI7148DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7148DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7148DP-T1-GE3?
For technical support, including SI7148DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7148DP-T1-GE3 requirements.
6.How does Aetrix verify that SI7148DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7148DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7148DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7148DP-T1-GE3?
All SI7148DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7148DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7148DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7148DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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