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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7160DP-T1-GE3

Name: SI7160DP-T1-GE3
Brand: Vishay Siliconix
SKU: SI7160DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7160DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7160DP-T1-GE3.pdf

Description:: MOSFET N-CH 30V 20A PPAK SO-8

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Product details

Overview

SI7160DP-T1-GE3 from Vishay Siliconix is an N-channel 30-V (D-S) MOSFET with integrated Schottky diode in PowerPAK® SO-8 package, featuring R_DS(on) = 0.0087 Ω at V_GS = 10 V, 20-A continuous drain current (T_C = 25 °C), and 44 nC total gate charge. It is designed for high-efficiency DC/DC conversion in notebook power rails.

For engineers reviewing the SI7160DP-T1-GE3 datasheet, SI7160DP-T1-GE3 pinout, SI7160DP-T1-GE3 application, or SI7160DP-T1-GE3 equivalent, key selection criteria include its ultra-low on-resistance, integrated body diode with 29 ns reverse recovery time, halogen-free construction, and thermal resistance of 3.4 °C/W (junction-to-case).

Technical Context

This MOSFET uses Vishay's TrenchFET® Gen II technology to achieve optimized Q_g and low R_DS(on) while maintaining robust UIS and avalanche capability (I_AS = 20 A, E_AS = 20 mJ). Its integrated Schottky diode enables fast switching with V_SD = 0.36 V at I_S = 2 A and t_rr = 29 ns.

The PowerPAK SO-8 package delivers low 1.07 mm profile and enhanced thermal performance (R_thJC = 3.4 °C/W typical), supporting high-density PCB layouts. Gate threshold voltage is tightly specified at 1.0–2.5 V, enabling reliable 4.5-V logic-level drive compatibility.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 5-V and 12-V input DC/DC stages
R_DS(on)	0.0087 Ω @ V_GS = 10 V - Enables <1.5 W conduction loss at 20 A in high-current synchronous buck phases
I_D (continuous)	20 A @ T_C = 25 °C - Package-limited current rating suitable for notebook CPU/GPU VRMs
Q_g	44 nC @ V_GS = 10 V - Optimized for efficient 500 kHz–1 MHz switching with minimal driver loss
V_GS(th)	1.0–2.5 V - Ensures full enhancement with standard 3.3-V or 5-V gate drivers
t_rr (body diode)	29 ns - Reduces dead-time losses and improves light-load efficiency in synchronous rectification
R_thJC	3.4 °C/W - Supports direct heatsink attachment or copper-pour thermal management in compact form factors

Pinout & Package

SI7160DP-T1-GE3 is housed in a leadless PowerPAK® SO-8 package (6.15 mm × 5.15 mm, 1.07 mm height) with exposed drain pads on the bottom for thermal and electrical connection. The top-side marking includes "7160" and date code; no top-side pins are present - all terminals are bottom-soldered.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal for MOSFET channel; requires low-impedance drive due to 1.0–1.5 Ω gate resistance
S	Source	Reference node for gate drive and current sensing; tied to power ground plane in synchronous buck layout
D (pins 4–8)	Drain	High-current output node connected to inductor and output capacitor; electrically and thermally coupled to bottom-exposed copper pad
Source–Drain Diode Anode	Schottky diode cathode	Integrated Schottky junction between source and drain enables fast freewheeling without external diode

Key Features

Feature	Design Value
Halogen-free construction	Complies with IEC 61249-2-21, eliminating brominated flame retardants for RoHS-compliant end equipment
TrenchFET® Gen II process	Delivers 15 % lower R_DS(on) vs. prior generation at same die size, improving power density in space-constrained notebooks
100 % UIS tested	Guarantees ruggedness against unclamped inductive switching events common in VRM load transients
Low-profile PowerPAK SO-8	1.07 mm max height enables thin-profile laptop designs while maintaining 27.7 W power dissipation at T_C = 25 °C
Optimized Q_g/R_DS(on) ratio	44 nC gate charge at 0.0087 Ω supports high-frequency operation without excessive driver power penalty

Applications

Notebook CPU VRM	Notebook GPU VRM
Use Scenario: High-current, high-efficiency step-down conversion for Intel Core or AMD Ryzen mobile processors under dynamic load. IC Role / Device Role / Timing Role: Synchronous buck high-side switch with integrated Schottky diode for freewheeling path. Use Value: 0.0087 Ω R_DS(on) reduces conduction loss by >25 % vs. legacy 12-mΩ MOSFETs, extending battery runtime at 15–20 A loads.	Use Scenario: Compact, thermally constrained power delivery to discrete or integrated graphics processing units in ultrabooks. IC Role / Device Role / Timing Role: Low-inductance, low-R_DS(on) power switch in multiphase buck converter with tight layout constraints. Use Value: 3.4 °C/W R_thJC allows direct thermal coupling to chassis or copper pour, maintaining T_J < 125 °C at 18 A continuous.
Thin Client DC/DC Converter	SSD Power Management
Use Scenario: Space-limited 5-V or 12-V to 1.8-V/3.3-V conversion for ARM-based thin client SoCs. IC Role / Device Role / Timing Role: Primary switching FET in monolithic or controller-based buck regulator powering memory and I/O rails. Use Value: 29 ns body diode t_rr minimizes reverse recovery loss during light-load discontinuous conduction mode (DCM), improving standby efficiency.	Use Scenario: Power gating and rail switching for NVMe SSD controllers and NAND flash arrays requiring fast turn-on/turn-off. IC Role / Device Role / Timing Role: Load switch with integrated diode for controlled inrush and reverse polarity protection. Use Value: 0.36 V forward voltage (V_SD) at 2 A ensures <0.75 W diode conduction loss during hot-plug events, reducing thermal stress on SSD PCB.

Notebook CPU VRM

Notebook GPU VRM

Use Scenario: High-current, high-efficiency step-down conversion for Intel Core or AMD Ryzen mobile processors under dynamic load.

IC Role / Device Role / Timing Role: Synchronous buck high-side switch with integrated Schottky diode for freewheeling path.

Use Value: 0.0087 Ω R_DS(on) reduces conduction loss by >25 % vs. legacy 12-mΩ MOSFETs, extending battery runtime at 15–20 A loads.

Use Scenario: Compact, thermally constrained power delivery to discrete or integrated graphics processing units in ultrabooks.

IC Role / Device Role / Timing Role: Low-inductance, low-R_DS(on) power switch in multiphase buck converter with tight layout constraints.

Use Value: 3.4 °C/W R_thJC allows direct thermal coupling to chassis or copper pour, maintaining T_J < 125 °C at 18 A continuous.

Thin Client DC/DC Converter

SSD Power Management

Use Scenario: Space-limited 5-V or 12-V to 1.8-V/3.3-V conversion for ARM-based thin client SoCs.

IC Role / Device Role / Timing Role: Primary switching FET in monolithic or controller-based buck regulator powering memory and I/O rails.

Use Value: 29 ns body diode t_rr minimizes reverse recovery loss during light-load discontinuous conduction mode (DCM), improving standby efficiency.

Use Scenario: Power gating and rail switching for NVMe SSD controllers and NAND flash arrays requiring fast turn-on/turn-off.

IC Role / Device Role / Timing Role: Load switch with integrated diode for controlled inrush and reverse polarity protection.

Use Value: 0.36 V forward voltage (V_SD) at 2 A ensures <0.75 W diode conduction loss during hot-plug events, reducing thermal stress on SSD PCB.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET with integrated Schottky diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP-T1-GE3	R_DS(on) = 0.012 Ω @ 10 V; higher Q_g (52 nC); same PowerPAK SO-8 package and 30-V rating	Lower current handling (16 A vs. 20 A); less suitable for >15-A VRM phases	Select when lower cost is prioritized over peak efficiency at high load, and thermal margin permits higher R_DS(on).
IRF7759L2TRPBF	30-V rating, R_DS(on) = 0.0095 Ω @ 10 V, but no integrated Schottky diode; SO-8 package with different pinout (G-S-D layout)	Requires external Schottky for synchronous rectification; not drop-in compatible due to pin assignment and missing diode	Choose only if external diode placement is acceptable and board layout can accommodate revised gate-source-drain routing.

Compared with Si7157DP-T1-GE3 and IRF7759L2TRPBF, SI7160DP-T1-GE3 offers the lowest R_DS(on) and built-in Schottky diode - critical for minimizing component count and conduction loss in notebook VRMs where space and efficiency are co-constrained.

Availability

SI7160DP-T1-GE3 is available at Aetrix Electronics and suitable for notebook CPU VRMs, GPU power delivery systems, and thin-client DC/DC converters requiring stable component supply, halogen-free compliance, and high thermal reliability.

Supply support for SI7160DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The Si7160DP product line is part of Vishay's TrenchFET® Gen II Power MOSFET family, engineered specifically for high-current, high-frequency DC/DC conversion in portable computing and enterprise storage applications.

FAQ

What is the maximum continuous drain current rating for SI7160DP-T1-GE3 at 70 °C case temperature?

The SI7160DP-T1-GE3 supports 20 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and assumes proper PCB copper area and thermal vias per Vishay's recommended layout for PowerPAK SO-8.

Does SI7160DP-T1-GE3 include an integrated Schottky diode, and what are its key parameters?

Yes, SI7160DP-T1-GE3 integrates a Schottky diode between source and drain. Key parameters include V_SD = 0.36 V at I_S = 2 A, reverse recovery time t_rr = 29 ns, and Q_rr = 21 nC - all measured at T_J = 25 °C with dI/dt = 100 A/µs.

What is the gate threshold voltage range for SI7160DP-T1-GE3, and how does it affect drive compatibility?

The SI7160DP-T1-GE3 has a gate threshold voltage V_GS(th) of 1.0–2.5 V, ensuring full enhancement with standard 3.3-V or 5-V gate drivers. This range guarantees reliable turn-on even with driver output tolerances and PCB trace losses, making SI7160DP-T1-GE3 suitable for logic-level control in notebook VRMs.

Is SI7160DP-T1-GE3 halogen-free and RoHS-compliant?

Yes, SI7160DP-T1-GE3 is both halogen-free (per IEC 61249-2-21) and RoHS-compliant. The "-GE3" suffix explicitly denotes lead-free and halogen-free construction, verified per Vishay's material declarations and manufacturing specifications.

What is the thermal resistance from junction to case (R_thJC) for SI7160DP-T1-GE3, and how should it be used in thermal design?

The SI7160DP-T1-GE3 has a typical junction-to-case thermal resistance R_thJC of 3.4 °C/W. This value applies to heat flow from the silicon die to the bottom-exposed drain pad and is used to calculate die temperature when a heatsink or thermal pad is attached directly to the package underside.

SI7160DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.7mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 2970 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 27.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7160DP-T1-GE3 FAQ

1.How can I place an order for SI7160DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7160DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7160DP-T1-GE3 reliable?

The price and inventory of SI7160DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7160DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI7160DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7160DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7160DP-T1-GE3?

SI7160DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7160DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7160DP-T1-GE3?

For technical support, including SI7160DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7160DP-T1-GE3 requirements.

6.How does Aetrix verify that SI7160DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI7160DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7160DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI7160DP-T1-GE3?

All SI7160DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7160DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7160DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SI7160DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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