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Vishay Siliconix SI7172ADP-T1-RE3
- Part No.:
- SI7172ADP-T1-RE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SI7172ADP-T1-RE3.pdf
- Description:
- MOSFET N-CH 200V PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:6,000
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Product details
Overview
SI7172ADP-T1-RE3 from Vishay Siliconix is an N-channel 200 V, 17.2 A (TC = 25 °C) PowerPAK® SO-8 MOSFET with RDS(on) = 0.070 Ω at VGS = 10 V, Qg = 15 nC typ., and optimized ThunderFET® technology for DC/DC converters and primary-side switching in telecom power supplies.
For engineers reviewing the SI7172ADP-T1-RE3 datasheet, SI7172ADP-T1-RE3 pinout, SI7172ADP-T1-RE3 application, or SI7172ADP-T1-RE3 equivalent, key selection criteria include its 200 V VDS, low gate charge for high-frequency switching, robust UIS rating, and thermal performance in surface-mount power conversion designs.
Technical Context
This MOSFET employs a planar trench-gate structure with ThunderFET® optimization to balance conduction loss (RDS(on)), switching speed (Qg, Qgd), and output capacitance (Coss = 100 pF). It supports hard-switched topologies up to 200 V drain-source voltage and delivers 26 A continuous body diode current for synchronous rectification.
Thermal design is enabled by a low RthJC of 1.9 °C/W (typ.) and RthJA of 20 °C/W (t ≤ 10 s) on FR4. The device is 100 % Rg and UIS tested, with gate threshold voltage VGS(th) = 2–4 V and body diode reverse recovery time trr = 126 ns (typ.) at IF = 10 A.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - Maximum blocking voltage for primary-side switch in offline or telecom DC/DC converters |
| RDS(on) max. @ VGS = 10 V | 0.070 Ω - Enables <1.7 W conduction loss at 17.2 A, critical for high-efficiency 48 V input systems |
| Qg typ. | 15 nC - Supports efficient 500 kHz–1 MHz switching with moderate gate driver strength |
| ID continuous @ TC = 25 °C | 17.2 A - Sustains full-load current in compact PowerPAK SO-8 footprint without external heatsink |
| EAS | 11.25 mJ - Withstands single-pulse avalanche energy during transient overvoltage events |
| RthJC max. | 2.4 °C/W - Enables direct thermal coupling to PCB copper or heatsink for >30 W power dissipation |
| trr typ. | 126 ns - Reduces body diode switching loss and EMI in synchronous rectifier operation |
Pinout & Package
Package: PowerPAK® SO-8 (leadless, exposed drain paddle), dimensions 6.15 mm × 5.15 mm × 1.04 mm (L × W × H), RoHS-compliant and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce package inductance and improve current sharing in high-di/dt applications |
| 5, 6, 7, 8 | Drain (D) | Exposed copper drain paddle (pins 5–8 bottom side) provides primary thermal path and low-inductance power return |
| G (top-side pad) | Gate (G) | Single top-side gate terminal enables standard pick-and-place and controlled gate drive routing |
Key Features
| Feature | Design Value |
|---|---|
| ThunderFET® technology | Optimized RDS(on)/Qg/Qoss trade-off for high-frequency, high-efficiency SMPS |
| 100 % Rg and UIS tested | Guarantees gate resistance consistency and ruggedness against unclamped inductive switching stress |
| Low Qgd/Qg ratio (0.27 typ.) | Improves Miller immunity and enables stable operation with moderate gate resistors in hard-switched converters |
| VGS(th) = 2–4 V | Ensures reliable turn-on with standard 5 V or 3.3 V logic-level gate drivers |
| Body diode Qrr = 360 nC typ. | Minimizes reverse recovery loss and associated ringing in synchronous rectifier configurations |
Applications
| Fixed Telecom Power Supply | Isolated DC/DC Converter |
|---|---|
|
Use Scenario: Primary-side switch in 48 V input, 300–500 W telecom rectifiers operating at 200–500 kHz. IC Role / Device Role / Timing Role: High-voltage N-channel power switch handling full input voltage and load current. Use Value: 200 V VDS and 17.2 A ID support high-power density without series stacking; low Qg reduces gate drive loss. |
Use Scenario: Secondary-side synchronous rectifier in isolated flyback or forward converters for server PSUs. IC Role / Device Role / Timing Role: Low-loss freewheeling switch replacing Schottky diodes to improve efficiency above 12 V output. Use Value: 26 A continuous body diode current and 126 ns trr enable clean commutation with minimal voltage overshoot. |
| Primary-Side Switch | Synchronous Rectifier |
|
Use Scenario: Main switching element in LLC resonant converters for data center power modules. IC Role / Device Role / Timing Role: Fast-turning, avalanche-rated switch managing high dv/dt and peak currents. Use Value: 11.25 mJ EAS and 15 A IAS provide margin against transformer leakage spikes and startup transients. |
Use Scenario: Output rectifier in high-current, low-voltage (3.3–12 V) point-of-load regulators. IC Role / Device Role / Timing Role: Bidirectional conduction path with low RDS(on) and fast body diode recovery. Use Value: 0.070 Ω RDS(on) cuts conduction loss vs. discrete diodes; Qrr = 360 nC limits switching loss at 1 MHz. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 200 V MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF640NPBF | TO-220 package, RDS(on) = 0.18 Ω @ 10 V, Qg = 67 nC - higher conduction and switching loss | Requires heatsink and larger board area; unsuitable for high-density surface-mount designs | Choose only if through-hole mounting and lower cost outweigh efficiency and size penalties |
| SiHP20N20CL | PowerPAK 8x8, RDS(on) = 0.045 Ω @ 10 V, Qg = 42 nC - lower RDS(on) but higher gate charge | Better conduction loss at high current, but slower switching and higher gate drive power | Select when thermal headroom is limited and switching frequency < 300 kHz; verify layout compatibility with larger 8x8 footprint |
Compared with IRF640NPBF, SI7172ADP-T1-RE3 offers 61 % lower RDS(on) and 78 % lower Qg in a surface-mount package, enabling smaller, cooler, and more efficient designs; versus SiHP20N20CL, it trades 31 % higher RDS(on) for 64 % lower Qg, favoring high-frequency operation where gate drive loss dominates.
Availability
SI7172ADP-T1-RE3 is available at Aetrix Electronics and suitable for fixed telecom power supplies, isolated DC/DC converters, and primary-side switching applications requiring stable component supply, long-term industrial lifecycle support, and lead-free/halogen-free compliance.
Supply support for SI7172ADP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The SI7172ADP-T1-RE3 belongs to Vishay's ThunderFET® PowerPAK SO-8 family, engineered specifically for high-efficiency, high-frequency switching in telecom, server, and industrial power conversion systems.
FAQ
What is the maximum continuous drain current for SI7172ADP-T1-RE3 at 70 °C case temperature?
The SI7172ADP-T1-RE3 supports 13.8 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits under steady-state conduction and must be validated against actual PCB copper area and airflow in the target application. The SI7172ADP-T1-RE3 datasheet confirms this value with test conditions defined per JEDEC standards.
Does SI7172ADP-T1-RE3 support logic-level gate drive?
Yes, SI7172ADP-T1-RE3 has a gate threshold voltage VGS(th) of 2–4 V, allowing reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers. However, full enhancement to RDS(on) = 0.070 Ω requires VGS = 10 V; using 5 V drive yields higher on-resistance (~0.12 Ω) and increased conduction loss. The SI7172ADP-T1-RE3 specification sheet explicitly defines these VGS dependencies.
What is the thermal resistance from junction to case (RthJC) for SI7172ADP-T1-RE3?
The SI7172ADP-T1-RE3 has a typical junction-to-case thermal resistance RthJC of 1.9 °C/W and a maximum of 2.4 °C/W, measured from junction to the exposed drain paddle. This low value enables efficient heat transfer to the PCB ground plane or external heatsink. The SI7172ADP-T1-RE3 thermal characterization is validated per JESD51-14 and documented in the Vishay datasheet revision A.
Is SI7172ADP-T1-RE3 suitable for synchronous rectification?
Yes, SI7172ADP-T1-RE3 is well-suited for synchronous rectification due to its 26 A continuous source-drain diode current, 126 ns typical reverse recovery time (trr), and 360 nC typical reverse recovery charge (Qrr). These parameters minimize body diode losses and voltage spikes during commutation. The SI7172ADP-T1-RE3 datasheet includes dedicated diode characterization curves confirming this capability.
What is the gate resistance (Rg) specification for SI7172ADP-T1-RE3?
The SI7172ADP-T1-RE3 has a typical gate resistance Rg of 1.6 Ω, with minimum and maximum values of 0.5 Ω and 3.0 Ω respectively, measured at 1 MHz. This parameter directly affects switching speed and gate driver power requirements. The SI7172ADP-T1-RE3 datasheet lists Rg in the Dynamic specifications table and notes it is 100 % production tested.
SI7172ADP-T1-RE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.3A (Ta), 17.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 50mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 3.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 19.5 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1110 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -55°C ~ 125°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SI7172ADP-T1-RE3 FAQ
1.How can I place an order for SI7172ADP-T1-RE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7172ADP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7172ADP-T1-RE3 reliable?
The price and inventory of SI7172ADP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7172ADP-T1-RE3 is usually 5 days.
3.What payment methods are accepted for SI7172ADP-T1-RE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7172ADP-T1-RE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7172ADP-T1-RE3?
SI7172ADP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7172ADP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7172ADP-T1-RE3?
For technical support, including SI7172ADP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7172ADP-T1-RE3 requirements.
6.How does Aetrix verify that SI7172ADP-T1-RE3 is sourced from the original manufacturer or authorized distributors?
All SI7172ADP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7172ADP-T1-RE3 meets industry standards.
7.What is the process for return or replacement of SI7172ADP-T1-RE3?
All SI7172ADP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7172ADP-T1-RE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7172ADP-T1-RE3 part is unused and in its original packaging.
Return procedure for SI7172ADP-T1-RE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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