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Vishay Siliconix SI7190ADP-T1-RE3
- Part No.:
- SI7190ADP-T1-RE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SI7190ADP-T1-RE3.pdf
- Description:
- MOSFET N-CH 250V 4.3A/14.4A PPAK
- Quantity:
- Payment:
- Shipping:
Inventory:4,540
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Product details
Overview
SI7190ADP-T1-RE3 from Vishay Siliconix is an N-channel 250 V (D-S) TrenchFET® power MOSFET in a PowerPAK® SO-8 package, delivering RDS(on) = 0.085 Ω (typ.) at VGS = 10 V and 4.3 A, with 11.7 nC total gate charge and 14.4 A continuous drain current at TC = 25 °C - optimized for primary-side switching in high-voltage DC/DC converters.
For engineers reviewing the SI7190ADP-T1-RE3 datasheet, SI7190ADP-T1-RE3 pinout, SI7190ADP-T1-RE3 application, or SI7190ADP-T1-RE3 equivalent, key selection criteria include its 250 V VDS, low thermal resistance (RthJC = 1.7 °C/W typ.), 100% Rg and UIS tested reliability, and suitability for synchronous rectification where fast body diode recovery (trr = 100 ns typ.) and low Qrr (420 nC typ.) reduce switching losses.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve high voltage blocking (250 V) with low on-resistance and controlled dynamic parameters. Its gate threshold voltage (VGS(th) = 2–4 V) ensures robust turn-on under standard 10 V gate drive while maintaining noise immunity.
The device features a fully characterized body diode with VSD = 0.75 V (typ.) at IS = 3.4 A and trr = 100 ns (typ.), enabling efficient synchronous rectification without external Schottky diodes. Thermal design is supported by validated RthJC = 1.7 °C/W (typ.) and RthJA = 20 °C/W (typ., t ≤ 10 s).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 250 V - supports primary-side switching in offline flyback and resonant converters up to 264 VAC input. |
| RDS(on) max @ 10 V | 0.102 Ω - enables <1.8 W conduction loss at 4.3 A, reducing heatsink requirements in compact industrial PSUs. |
| Qg typ. | 11.7 nC - allows fast switching with moderate gate driver strength (e.g., 1 A peak), minimizing turn-on energy loss. |
| ID cont. @ TC = 25 °C | 14.4 A - supports high-current output stages in telecom DC/DC modules without derating at case temperature. |
| trr typ. | 100 ns - reduces reverse recovery loss and EMI in synchronous rectifier configurations operating above 100 kHz. |
| RthJC typ. | 1.7 °C/W - permits direct mounting to copper planes or heatsinks for thermal management in space-constrained PCB layouts. |
| VGS(th) | 2–4 V - ensures reliable enhancement-mode operation with standard logic-level or PWM controller gate drivers. |
Pinout & Package
SI7190ADP-T1-RE3 is housed in a leadless PowerPAK® SO-8 package (5.15 mm × 6.15 mm footprint, 1.04 mm height), featuring exposed drain pads on the bottom side for enhanced thermal performance and mechanical stability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Common source connection for internal die; electrically tied to all source bond wires - used for low-inductance return path in high-frequency switching. |
| 5, 6, 7, 8 | Drain (D) | High-current drain terminals; connected to exposed copper pad on bottom - provides primary thermal conduction path to PCB copper. |
| G (Gate) | Control terminal | Single gate input (Pin 1 top view per datasheet diagram); requires <2.4 Ω gate resistance to limit ringing during fast transitions. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Enables 250 V rating with sub-0.1 Ω RDS(on), improving power density vs. planar MOSFETs in same package. |
| 100 % Rg and UIS tested | Guarantees gate robustness against transient overvoltage and avalanche energy handling (EAS = 4.05 mJ) in real-world surge conditions. |
| PowerPAK® SO-8 package | Reduces RthJA by ~40 % vs. standard SO-8, supporting higher power in same board area without forced air cooling. |
| Low Qgd/Qg ratio | Qgd = 3.7 nC / Qg = 11.7 nC ≈ 0.32 - improves hard-switching efficiency and reduces Miller-induced shoot-through risk. |
| Body diode Qrr | 420 nC (typ.) - lowers commutation loss in synchronous rectification, especially critical in LLC and phase-shifted full-bridge topologies. |
Applications
| Industrial DC/DC Converters | Offline Flyback Primary Switch |
|---|---|
|
Use Scenario: High-efficiency 24–48 V output DC/DC modules for PLCs and motor drives operating from 380 VDC bus. IC Role / Device Role / Timing Role: Primary-side high-side switch controlling energy transfer into transformer primary winding at 100–300 kHz. Use Value: 250 V VDS margin accommodates 380 VDC + 20 % transients; low RDS(on) minimizes conduction loss at full load. |
Use Scenario: Universal-input (85–264 VAC) flyback SMPS powering IoT gateways and smart sensors. IC Role / Device Role / Timing Role: Main switching transistor on primary side, turning on/off based on optocoupler feedback loop timing. Use Value: 14.4 A ID rating supports >65 W designs; fast trr and low Qrr suppress diode recovery spikes and improve EMI profile. |
| Synchronous Rectification | LED Driver Power Stage |
|
Use Scenario: Secondary-side synchronous rectifier in 12 V/10 A isolated buck-derived LED driver for commercial lighting. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode, driven by transformer-coupled or controller-synchronized gate signal. Use Value: Body diode VSD = 0.75 V (typ.) and trr = 100 ns enable >2 % efficiency gain vs. 40 V Schottky at 10 A, 100 kHz. |
Use Scenario: Constant-current LED driver for high-bay fixtures using boost topology with 300 V output bus. IC Role / Device Role / Timing Role: High-voltage switch in boost converter power stage, cycling at 50–150 kHz to regulate LED string current. Use Value: RthJC = 1.7 °C/W allows direct thermal coupling to aluminum PCB, sustaining 12 W dissipation without heatsink. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP20NM50FP | 500 V VDS, RDS(on) = 0.22 Ω @ 10 V, TO-220FP package, RthJC = 2.5 °C/W | Higher voltage rating but double RDS(on) and larger thermal resistance - suited for lower-frequency, higher-voltage legacy designs. | Choose STP20NM50FP only when 500 V rating is mandatory and board space/thermal budget allow TO-220 footprint. |
| IRF640NPBF | 200 V VDS, RDS(on) = 0.18 Ω @ 10 V, TO-220 package, no UIS testing specified | Limited to 200 V systems; lacks 100 % UIS test and has higher conduction loss - acceptable for cost-sensitive, non-safety-critical 120 VAC inputs. | Select IRF640NPBF only for <200 V applications where qualification rigor and thermal performance are secondary to BOM cost. |
Compared with STP20NM50FP and IRF640NPBF, SI7190ADP-T1-RE3 offers superior power density (PowerPAK SO-8), lower RDS(on), verified UIS robustness, and faster switching - making it the preferred choice for modern, compact, high-efficiency 250 V-class power stages.
Availability
SI7190ADP-T1-RE3 is available at Aetrix Electronics and suitable for industrial DC/DC converters, offline flyback power supplies, and synchronous rectification circuits requiring stable component supply, long-term lifecycle support, and RoHS-compliant lead-free packaging.
Supply support for SI7190ADP-T1-RE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal efficiency, and application-specific optimization.
The SI7190ADP-T1-RE3 belongs to Vishay's TrenchFET® PowerPAK® SO-8 family, engineered for high-voltage, high-frequency power conversion in space-constrained industrial and lighting applications where thermal performance and switching efficiency are critical.
FAQ
What is the maximum continuous drain current for SI7190ADP-T1-RE3 at 70 °C case temperature?
The SI7190ADP-T1-RE3 supports 11.5 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK® SO-8 package and must be applied when ambient or board-level thermal conditions elevate case temperature beyond 25 °C. Designers should verify junction temperature using RthJC = 1.7 °C/W (typ.) and actual power dissipation.
Does SI7190ADP-T1-RE3 have a guaranteed avalanche rating?
Yes, SI7190ADP-T1-RE3 is 100 % UIS (Unclamped Inductive Switching) tested per datasheet, with a single-pulse avalanche current (IAS) of 9 A and single-pulse avalanche energy (EAS) of 4.05 mJ. These values are measured under standardized conditions (L = 0.1 mH) and confirm ruggedness against inductive turn-off transients common in relay driving and transformer-based power supplies.
What is the gate-source threshold voltage range for SI7190ADP-T1-RE3?
The gate-source threshold voltage (VGS(th)) for SI7190ADP-T1-RE3 is specified as 2.0–4.0 V at VDS = VGS and ID = 250 μA. This range ensures reliable turn-on with standard 5 V or 10 V gate drivers while providing sufficient noise margin to prevent false triggering in noisy industrial environments where SI7190ADP-T1-RE3 is commonly deployed.
Can SI7190ADP-T1-RE3 be used in synchronous rectification mode?
Yes, SI7190ADP-T1-RE3 is suitable for synchronous rectification due to its characterized body diode with VSD = 0.75 V (typ.) at IS = 3.4 A and trr = 100 ns (typ.). Its low Qrr (420 nC typ.) and fast recovery minimize commutation loss - confirmed in Vishay Application Note AN826 for PowerPAK® SO-8 devices like SI7190ADP-T1-RE3.
What is the thermal resistance from junction to case for SI7190ADP-T1-RE3?
The typical junction-to-case thermal resistance (RthJC) for SI7190ADP-T1-RE3 is 1.7 °C/W, with a maximum of 2.2 °C/W, measured from junction to the drain pad (exposed copper on bottom). This low value enables effective heat transfer to PCB copper or heatsinks - critical for maintaining TJ ≤ 150 °C in high-power-density applications using SI7190ADP-T1-RE3.
SI7190ADP-T1-RE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- ThunderFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 250 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.3A (Ta), 14.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 7.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 102mOhm @ 4.3A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 22.4 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 860 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Ta), 56.8W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SI7190ADP-T1-RE3 FAQ
1.How can I place an order for SI7190ADP-T1-RE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7190ADP-T1-RE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7190ADP-T1-RE3 reliable?
The price and inventory of SI7190ADP-T1-RE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7190ADP-T1-RE3 is usually 5 days.
3.What payment methods are accepted for SI7190ADP-T1-RE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7190ADP-T1-RE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7190ADP-T1-RE3?
SI7190ADP-T1-RE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7190ADP-T1-RE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7190ADP-T1-RE3?
For technical support, including SI7190ADP-T1-RE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7190ADP-T1-RE3 requirements.
6.How does Aetrix verify that SI7190ADP-T1-RE3 is sourced from the original manufacturer or authorized distributors?
All SI7190ADP-T1-RE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7190ADP-T1-RE3 meets industry standards.
7.What is the process for return or replacement of SI7190ADP-T1-RE3?
All SI7190ADP-T1-RE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7190ADP-T1-RE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7190ADP-T1-RE3 part is unused and in its original packaging.
Return procedure for SI7190ADP-T1-RE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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