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Vishay Siliconix SI7192DP-T1-GE3
- Part No.:
- SI7192DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SI7192DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 60A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:2,895
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Product details
Overview
SI7192DP-T1-GE3 from Vishay Siliconix is an N-channel 30-V (D-S) TrenchFET® Gen III Power MOSFET in PowerPAK® SO-8 package, delivering RDS(on) = 1.9 mΩ at VGS = 10 V and 2.25 mΩ at VGS = 4.5 V, rated for 60 A continuous drain current (TJ = 150 °C), and optimized for low-side switching in high-current DC/DC converters and VRM/point-of-load applications.
For engineers reviewing the SI7192DP-T1-GE3 datasheet, SI7192DP-T1-GE3 pinout, SI7192DP-T1-GE3 application, or SI7192DP-T1-GE3 equivalent, this page delivers verified electrical parameters, thermal performance data, validated PowerPAK® SO-8 footprint compatibility with standard SO-8 layouts, and real-world design implications of its 0.9 °C/W junction-to-case thermal resistance and 100% avalanche-tested construction.
Technical Context
This MOSFET employs TrenchFET® Gen III silicon technology to achieve ultra-low on-resistance while maintaining robust gate oxide integrity and fast switching dynamics. Its 100% Rg and avalanche testing ensure gate drive stability and ruggedness under transient overvoltage conditions typical in synchronous buck converter low-side operation.
The PowerPAK® SO-8 package provides a leadless, bottom-thermal-pad construction with identical pinout and footprint to standard SO-8 - enabling drop-in replacement - while delivering DPAK-equivalent thermal performance (RthJC = 0.9 °C/W max) via direct die-attach pad exposure and minimized junction-to-board thermal path.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage; defines safe operating range in 12 V and 24 V input DC/DC stages. |
| RDS(on) @ VGS = 10 V | 1.9 mΩ - Enables <1.2 W conduction loss at 60 A; critical for high-efficiency POL regulators. |
| RDS(on) @ VGS = 4.5 V | 2.25 mΩ - Ensures low-loss operation with 5 V gate drive, supporting logic-level controller compatibility. |
| Qg (Total Gate Charge) | 43.5 nC (at 4.5 V) - Determines gate driver power requirement and switching transition time in high-frequency (>500 kHz) converters. |
| ID Continuous (TJ = 150 °C) | 60 A - Package-limited current rating; supports high-current server VRMs without paralleling. |
| RthJC | 0.9 °C/W (max) - Enables efficient heat transfer to PCB copper; allows >100 W power dissipation with modest heatsinking. |
| Avalanche Energy (EAS) | 125 mJ - Confirmed single-pulse ruggedness against inductive switching transients in non-synchronous topologies. |
Pinout & Package
PowerPAK® SO-8 is a leadless, surface-mount package with exposed drain pad on bottom side, identical 5.15 mm × 6.15 mm footprint and pinout to standard SO-8. It features four drain terminals (pins 1, 2, 3, 8), two source terminals (pins 4, 5), and one gate terminal (pin 6); pin 7 is NC (no connection).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 8 | Drain | High-current output node; all four pins internally connected to exposed bottom thermal pad - must be soldered to large copper pour for thermal and current handling. |
| 4, 5 | Source | Return path for load current; tied to power ground plane; forms Kelvin sensing path for accurate current monitoring when used with external shunt. |
| 6 | Gate | Control input; requires low-impedance drive (<2 Ω) to minimize switching losses; gate resistance Rg = 1.1–2 Ω measured at 1 MHz. |
| 7 | No Connection | Electrically isolated; no internal bond wire or die connection - must remain unconnected on PCB. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen III silicon | Delivers 1.9 mΩ RDS(on) at 10 V in SO-8 footprint - 3× lower on-resistance than prior-gen equivalents. |
| 100 % Rg tested | Guarantees gate resistance between 1.1–2 Ω, ensuring predictable turn-on/turn-off timing and driver sizing. |
| 100 % avalanche tested | Validates 50 A single-pulse avalanche current and 125 mJ energy rating - eliminates need for external snubbers in hard-switched designs. |
| Lead (Pb)-free and Halogen-free | Meets RoHS Directive 2011/65/EU and JEDEC JS709C; compatible with lead-free reflow profiles up to 255 °C peak. |
| PowerPAK® SO-8 package | Enables direct replacement of standard SO-8 MOSFETs without layout change while improving thermal resistance by 94 % vs. SO-8 (0.9 vs. 16 °C/W). |
Applications
| Server VRM Low-Side Switch | High-Current POL Converter |
|---|---|
Use Scenario: Primary low-side switch in multiphase buck converters supplying CPU/GPU core voltage (0.8–1.2 V) at up to 300 A per rail. IC Role / Device Role / Timing Role: Synchronous rectifier conducting during bottom-half of switching cycle; handles high RMS current with minimal conduction loss. Use Value: 1.9 mΩ RDS(on) reduces I²R loss by >40 % versus 3.2 mΩ alternatives, directly improving system efficiency and reducing thermal stress on adjacent components. |
Use Scenario: Output stage switch in compact 48 V–12 V intermediate bus converters for telecom and networking equipment. IC Role / Device Role / Timing Role: High-duty-cycle low-side FET operating at 300–600 kHz with 60 A continuous current demand. Use Value: 2.25 mΩ RDS(on) at 4.5 V gate drive enables use with 5 V controllers, eliminating level-shifters while maintaining <1.5 W conduction loss at full load. |
| Industrial DC/DC Module | Automotive ADAS Power Supply |
Use Scenario: Secondary-side synchronous rectifier in isolated 24 V–5 V DC/DC modules for PLC and motor control systems. IC Role / Device Role / Timing Role: Low-side switch in non-isolated buck stage regulating auxiliary rails; operates across -40 to +125 °C ambient. Use Value: -55 to +150 °C operating range and 125 mJ EAS ensure reliability during load dump and cold-crank events without derating. |
Use Scenario: Power delivery switch for radar and camera modules requiring ASIL-B compliant 12 V–3.3 V conversion. IC Role / Device Role / Timing Role: Low-side FET in fault-tolerant buck regulator with integrated current limiting and thermal shutdown. Use Value: 100 % avalanche testing and 0.9 °C/W RthJC support sustained 60 A operation under 105 °C board temperature - meeting automotive thermal margin requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 30-V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7850DP-T1-GE3 | RDS(on) = 2.3 mΩ @ 10 V; Qg = 40 nC; same PowerPAK® SO-8 package and pinout. | Slightly higher conduction loss but lower gate charge - better suited for >1 MHz switching where gate drive loss dominates. | Select Si7850DP-T1-GE3 when optimizing for high-frequency efficiency; retain same layout and thermal design. |
| IRF7832TRPBF | RDS(on) = 2.0 mΩ @ 10 V; Qg = 52 nC; standard SO-8 package with gull-wing leads. | Higher RthJA (54 °C/W vs. 20 °C/W) limits power handling; not suitable for >25 A continuous without forced air. | Choose IRF7832TRPBF only for cost-sensitive, low-power (<15 A) designs where thermal headroom exists and leaded assembly is preferred. |
Compared with Si7850DP-T1-GE3, SI7192DP-T1-GE3 offers lower RDS(on) for reduced conduction loss in high-current POL rails; compared with IRF7832TRPBF, it delivers 2.7× lower thermal resistance and 2.5× higher current capability in the same PCB area - making it superior for space-constrained, thermally demanding server and industrial applications.
Availability
SI7192DP-T1-GE3 is available at Aetrix Electronics and suitable for server VRM, high-current POL, and industrial DC/DC applications requiring stable component supply, long-term manufacturability, and RoHS-compliant packaging.
Supply support for SI7192DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.
The SI7192DP-T1-GE3 belongs to Vishay's TrenchFET® Gen III Power MOSFET family, engineered specifically for high-current, low-voltage synchronous buck converters in computing, telecom, and industrial power systems.
FAQ
What is the maximum continuous drain current rating for SI7192DP-T1-GE3 at 70 °C case temperature?
The SI7192DP-T1-GE3 is rated for 60 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and assumes proper PCB copper area and thermal management per Vishay Application Note AN821. At higher ambient temperatures or with insufficient copper, derating per the Current Derating curve on page 5 of document 69815 applies. SI7192DP-T1-GE3 maintains this current capability due to its 0.9 °C/W RthJC and PowerPAK® SO-8 thermal architecture.
Does SI7192DP-T1-GE3 support 4.5 V gate drive in high-efficiency applications?
Yes, SI7192DP-T1-GE3 is fully characterized for 4.5 V gate drive, with RDS(on) = 2.25 mΩ (typical) at ID = 20 A and VGS = 4.5 V. This enables direct interfacing with 5 V logic-level PWM controllers without level-shifting, reducing component count and propagation delay. The gate threshold voltage VGS(th) ranges from 1.0 V to 2.5 V, ensuring reliable turn-on at 4.5 V across temperature and process variation. SI7192DP-T1-GE3 achieves this while maintaining 100 % avalanche testing and 100 % Rg screening.
Can SI7192DP-T1-GE3 be mounted on a standard SO-8 land pattern?
Yes, SI7192DP-T1-GE3 uses the PowerPAK® SO-8 package, which shares identical footprint, pinout, and dimensions with standard SO-8 - enabling direct PCB layout reuse. Vishay confirms compatibility in Application Note AN821, noting that thermal performance improves by ≥10 °C/W versus standard SO-8 even on legacy pads. For optimal thermal performance, extend the drain pad copper area per Application Note 826 (document 72599). SI7192DP-T1-GE3 requires no redesign when replacing SO-8 MOSFETs in existing VRM or POL designs.
What is the significance of 100 % avalanche testing for SI7192DP-T1-GE3?
100 % avalanche testing certifies every SI7192DP-T1-GE3 unit to withstand single-pulse avalanche energy of 125 mJ and current of 50 A (L = 0.1 mH), ensuring robustness against inductive switching transients in non-synchronous or fault-condition scenarios. This eliminates the need for external snubber networks in many DC/DC topologies and guarantees reliability during startup, overload, or controller failure. Unlike statistical sampling, 100 % testing means every SI7192DP-T1-GE3 device shipped meets this ruggedness specification - a key differentiator for mission-critical server and industrial power supplies.
How does the PowerPAK® SO-8 package improve thermal performance over standard SO-8?
The PowerPAK® SO-8 package in SI7192DP-T1-GE3 exposes the MOSFET die attach pad as a large bottom-side copper area, creating a direct thermal path to the PCB. This achieves RthJC = 0.9 °C/W (max), versus 16 °C/W for standard SO-8 - a 94 % reduction. As a result, SI7192DP-T1-GE3 dissipates heat more efficiently, enabling 60 A operation at lower junction temperatures and reducing thermal stress on adjacent components. Application Note AN821 demonstrates that even on legacy SO-8 pads, SI7192DP-T1-GE3 delivers ≥10 °C/W improvement in thermal resistance.
SI7192DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 135 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5800 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 6.25W (Ta), 104W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SI7192DP-T1-GE3 FAQ
1.How can I place an order for SI7192DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7192DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7192DP-T1-GE3 reliable?
The price and inventory of SI7192DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7192DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7192DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7192DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7192DP-T1-GE3?
SI7192DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7192DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7192DP-T1-GE3?
For technical support, including SI7192DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7192DP-T1-GE3 requirements.
6.How does Aetrix verify that SI7192DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7192DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7192DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7192DP-T1-GE3?
All SI7192DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7192DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7192DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7192DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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