Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7196DP-T1-E3

Name: SI7196DP-T1-E3
Brand: Vishay Siliconix
SKU: SI7196DP-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SI7196DP-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7196DP-T1-E3.pdf

Description:: MOSFET N-CH 30V 16A PPAK SO-8

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,043

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SI7196DP-T1-E3 from Vishay Siliconix is an N-channel 30-V (D-S) Power MOSFET in PowerPAK® SO-8 package, optimized for high-efficiency synchronous buck converters. It delivers R_DS(on) = 0.011 Ω at V_GS = 10 V and 0.0145 Ω at V_GS = 4.5 V, supports 16 A continuous drain current (package-limited), and features ultra-low Q_gd (4.3 nC) for minimized switching losses in notebook core voltage regulation.

For engineers reviewing the SI7196DP-T1-E3 datasheet, SI7196DP-T1-E3 pinout, SI7196DP-T1-E3 application, or SI7196DP-T1-E3 equivalent, this device is selected for high-side core voltage switching and low-side system power stages where thermal performance, gate charge efficiency, and Pb-free compliance are critical design constraints.

Technical Context

This MOSFET employs Vishay's WFET® technology to achieve extremely low gate-drain charge (Q_gd = 4.3 nC) and input capacitance (C_iss = 1577 pF), enabling fast, low-loss switching in high-frequency DC/DC converters. Its 30 V V_DS rating and ±20 V V_GS range support robust gate drive margin in 3.3 V and 5 V control environments.

The PowerPAK SO-8 package provides a junction-to-case thermal resistance of 2.4 °C/W (typical), matching DPAK-level thermal performance while maintaining SO-8 footprint compatibility. It is 100 % avalanche tested and 100 % R_g tested per production lot, ensuring reliability in transient-heavy applications like CPU VRMs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; suitable for 24 V input rails and 3.3/5 V logic-level gate drive.
R_DS(on) @ V_GS = 10 V	0.011 Ω - Enables ≤1.3 W conduction loss at 12 A, critical for thermally constrained notebook VRMs.
R_DS(on) @ V_GS = 4.5 V	0.0145 Ω - Ensures stable on-resistance with standard 4.5 V gate drivers, avoiding underdrive-induced heating.
Q_g (total)	13.2 nC (at 4.5 V) - Low gate charge reduces driver power demand and enables >1 MHz operation without excessive gate loss.
Q_gd	4.3 nC - Ultra-low Miller charge minimizes switching transition time and dv/dt-induced shoot-through risk.
T_J Range	–55 °C to +150 °C - Supports extended industrial and automotive-adjacent operating environments.
R_thJC	2.4 °C/W (typ.) - Enables direct thermal coupling to PCB copper, delivering DPAK-equivalent cooling in SO-8 footprint.

Pinout & Package

SI7196DP-T1-E3 is housed in a leadless PowerPAK® SO-8 package (6.15 mm × 5.15 mm), featuring exposed drain pads on the bottom for enhanced thermal conduction. The package maintains identical pinout and footprint to standard SO-8, enabling drop-in replacement in existing layouts.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Common source connection; pins 1–4 are internally tied and serve as low-impedance return path for high-current switching node.
5, 6, 7, 8	Drain (D)	High-current output terminal; pins 5–8 form a single exposed copper drain pad on bottom side for thermal and electrical conduction.
3 (center)	Gate (G)	Single gate input (pin 3); isolated from source/drain; requires <3.0 Ω gate resistance to ensure controlled turn-on/turn-off timing.

Key Features

Feature	Design Value
WFET® Technology	Reduces Q_gd by >30 % vs. conventional trench MOSFETs, directly lowering E_sw in hard-switched topologies.
100 % R_g Tested	Guarantees gate resistance ≤3.0 Ω, ensuring predictable gate drive timing and eliminating batch-dependent oscillation risk.
100 % Avalanche Tested	Validates ruggedness against inductive energy dump (IAS = 20 A, EAS = 20 mJ), essential for unclamped flyback or synchronous rectifier faults.
Halogen-Free Construction	Complies with IEC 61249-2-21; eliminates brominated flame retardants without compromising dielectric or thermal performance.
PowerPAK SO-8 Footprint	Enables direct substitution for SO-8 MOSFETs while delivering 5× lower R_thJC than standard SO-8, improving board-level thermal headroom.

Applications

Core Voltage Regulation	Notebook System Power
Use Scenario: Primary high-side switch in 1–2 phase CPU/GPU VRMs powering Intel Core or AMD Ryzen processors. IC Role / Device Role: Synchronous rectifier high-side switch handling up to 16 A DC load with 300 kHz–1 MHz PWM. Use Value: Low R_DS(on) and Q_gd reduce both conduction and switching losses, enabling >92 % efficiency at 12 V input / 1.2 V output.	Use Scenario: Low-side switch in dual-phase notebook system power rail (e.g., +5 V or +3.3 V AUX). IC Role / Device Role: Ground-referenced power switch controlling bulk capacitance charging and discharge during sleep/wake transitions. Use Value: Robust body diode (V_SD = 0.75 V typ., t_rr = 25 ns) minimizes reverse recovery loss during discontinuous conduction mode (DCM) operation.
Industrial DC/DC Converters	Embedded Computing Power
Use Scenario: High-density 24 V input to 5 V/3.3 V isolated or non-isolated converter in programmable logic controllers (PLCs). IC Role / Device Role: Primary switch in synchronous buck stage operating at ambient temperatures up to 70 °C. Use Value: Junction-to-case thermal resistance of 2.4 °C/W allows full 16 A rating at T_C = 70 °C without heatsink, reducing BOM count.	Use Scenario: Point-of-load (POL) regulator in fanless embedded systems (e.g., medical displays, kiosks) requiring silent operation. IC Role / Device Role: Low-noise, high-efficiency switch managing dynamic load steps up to 10 A/µs in compact 2-layer PCB designs. Use Value: Pb-free and halogen-free construction meets IEC 61000-6-3 EMC and RoHS/REACH compliance requirements for Class B emissions.

Core Voltage Regulation

Notebook System Power

Use Scenario: Primary high-side switch in 1–2 phase CPU/GPU VRMs powering Intel Core or AMD Ryzen processors.

IC Role / Device Role: Synchronous rectifier high-side switch handling up to 16 A DC load with 300 kHz–1 MHz PWM.

Use Value: Low R_DS(on) and Q_gd reduce both conduction and switching losses, enabling >92 % efficiency at 12 V input / 1.2 V output.

Use Scenario: Low-side switch in dual-phase notebook system power rail (e.g., +5 V or +3.3 V AUX).

IC Role / Device Role: Ground-referenced power switch controlling bulk capacitance charging and discharge during sleep/wake transitions.

Use Value: Robust body diode (V_SD = 0.75 V typ., t_rr = 25 ns) minimizes reverse recovery loss during discontinuous conduction mode (DCM) operation.

Industrial DC/DC Converters

Embedded Computing Power

Use Scenario: High-density 24 V input to 5 V/3.3 V isolated or non-isolated converter in programmable logic controllers (PLCs).

IC Role / Device Role: Primary switch in synchronous buck stage operating at ambient temperatures up to 70 °C.

Use Value: Junction-to-case thermal resistance of 2.4 °C/W allows full 16 A rating at T_C = 70 °C without heatsink, reducing BOM count.

Use Scenario: Point-of-load (POL) regulator in fanless embedded systems (e.g., medical displays, kiosks) requiring silent operation.

IC Role / Device Role: Low-noise, high-efficiency switch managing dynamic load steps up to 10 A/µs in compact 2-layer PCB designs.

Use Value: Pb-free and halogen-free construction meets IEC 61000-6-3 EMC and RoHS/REACH compliance requirements for Class B emissions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30-V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP-T1-E3	R_DS(on) = 0.0086 Ω @ 10 V (lower), but Q_g = 20 nC @ 4.5 V (higher); same PowerPAK SO-8 package.	Better conduction loss at high V_GS, but higher gate drive loss limits optimal frequency to ≤500 kHz.	Select Si7157DP-T1-E3 only when conduction loss dominates and gate drive capability supports ≥20 nC charge.
IRF7478PBF	Standard SO-8 (not PowerPAK); R_DS(on) = 0.013 Ω @ 10 V; R_thJC = 16 °C/W (5× worse thermal resistance).	Requires larger PCB copper area or heatsinking to match SI7196DP-T1-E3 thermal performance at 12 A.	Choose IRF7478PBF only for legacy SO-8 layouts where PowerPAK thermal advantages are not required.

Compared with Si7157DP-T1-E3, SI7196DP-T1-E3 trades marginal R_DS(on) increase for significantly lower Q_gd and total Q_g, making it superior for high-frequency, gate-drive-constrained designs. Against IRF7478PBF, SI7196DP-T1-E3 delivers identical electrical specs with dramatically improved thermal management-no layout change needed, yet 43 °C lower junction rise at 2.7 W dissipation.

Availability

SI7196DP-T1-E3 is available at Aetrix Electronics and suitable for notebook VRMs, industrial DC/DC converters, and embedded computing power supplies requiring stable component supply, Pb-free compliance, and high thermal reliability.

Supply support for SI7196DP-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SI7196DP-T1-E3 belongs to Vishay's PowerPAK® SO-8 N-channel MOSFET family, engineered specifically for high-current, high-frequency synchronous buck converters in space-constrained portable and industrial power systems.

FAQ

What is the maximum continuous drain current rating for SI7196DP-T1-E3 at 70 °C case temperature?

The SI7196DP-T1-E3 is rated for 16 A continuous drain current at T_C = 70 °C, limited by package thermal capacity-not silicon capability-as confirmed in the Absolute Maximum Ratings table (Document 70336, Rev. C). This rating assumes proper PCB copper thermal relief and no airflow restriction.

Does SI7196DP-T1-E3 support 4.5 V gate drive in high-side synchronous buck configurations?

Yes, SI7196DP-T1-E3 specifies R_DS(on) = 0.0145 Ω at V_GS = 4.5 V and ID = 10 A, and its V_GS(th) range (1.0–3.0 V) ensures full enhancement with 4.5 V gate drive. This makes SI7196DP-T1-E3 suitable for high-side use with bootstrap gate drivers in standard 5 V logic systems.

Is SI7196DP-T1-E3 pin-compatible with standard SO-8 MOSFETs?

Yes, SI7196DP-T1-E3 uses the PowerPAK® SO-8 package with identical pinout, footprint, and land pattern compatibility to standard SO-8. Pin 1–4 = Source, Pin 5–8 = Drain, Pin 3 = Gate-enabling direct replacement without PCB redesign, as verified in Application Note AN821.

What is the body diode forward voltage and reverse recovery time of SI7196DP-T1-E3?

The SI7196DP-T1-E3 body diode has V_SD = 0.75–1.1 V at I_S = 2.3 A and t_rr = 25–40 ns at I_F = 2.7 A, dI/dt = 100 A/µs, and T_J = 25 °C. These values are measured and guaranteed per datasheet Section "Drain-Source Body Diode Characteristics" (Document 70336, p. 2).

How does the thermal performance of SI7196DP-T1-E3 compare to standard SO-8 MOSFETs?

SI7196DP-T1-E3 achieves R_thJC = 2.4 °C/W (typ.), versus ~16 °C/W for standard SO-8 packages-a 6.7× improvement. At 2.7 W dissipation on a 105 °C board, SI7196DP-T1-E3 reaches T_J ≈ 107 °C, while a standard SO-8 would reach ~148 °C, directly preserving R_DS(on) stability and current capability.

SI7196DP-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: WFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 11mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1577 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 41.6W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7196DP-T1-E3 FAQ

1.How can I place an order for SI7196DP-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7196DP-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7196DP-T1-E3 reliable?

The price and inventory of SI7196DP-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7196DP-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI7196DP-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7196DP-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7196DP-T1-E3?

SI7196DP-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7196DP-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7196DP-T1-E3?

For technical support, including SI7196DP-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7196DP-T1-E3 requirements.

6.How does Aetrix verify that SI7196DP-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI7196DP-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7196DP-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI7196DP-T1-E3?

All SI7196DP-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7196DP-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7196DP-T1-E3 part is unused and in its original packaging.

Return procedure for SI7196DP-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …