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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7230DN-T1-E3

Name: SI7230DN-T1-E3
Brand: Vishay Siliconix
SKU: SI7230DN-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7230DN-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SI7230DN-T1-E3.pdf

Description:: MOSFET N-CH 30V 9A PPAK 1212-8

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Product details

Overview

SI7230DN-T1-E3 from Vishay Siliconix is a N-channel 30-V (D-S) TrenchFET® Power MOSFET optimized for PWM switching in DC/DC converters, featuring R_DS(on) = 0.012 Ω at V_GS = 10 V, 14 A continuous drain current, and PowerPAK® 1212-8 leadless package for high-power-density synchronous rectification.

For engineers reviewing the SI7230DN-T1-E3 datasheet, SI7230DN-T1-E3 pinout, SI7230DN-T1-E3 application, or SI7230DN-T1-E3 equivalent, key selection criteria include its 30-V V_DS, low gate charge (13.2–20 nC), 100% R_g tested specification, thermal performance (R_thJC = 2.0–2.4 °C/W), and suitability as a high-side MOSFET in synchronous buck converters.

Technical Context

This MOSFET employs trench-based silicon technology to achieve low on-resistance and fast switching dynamics. Its gate threshold voltage (1.0–3.0 V) enables compatibility with 3.3 V and 5 V logic-level drive, while the 100% R_g test ensures consistent gate resistance (0.9–2.7 Ω) across production lots.

The device integrates a body diode with forward voltage of 0.8–1.1 V at I_S = 3.2 A and reverse recovery time of 25–40 ns, supporting efficient synchronous rectification. Its PowerPAK 1212-8 package exposes the drain pad on the bottom surface, delivering ultra-low junction-to-case thermal resistance (2.0–2.4 °C/W) without requiring through-hole thermal vias.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 12 V input bus and 5 V output synchronous buck stages.
R_DS(on)	0.012 Ω @ V_GS = 10 V - Enables <170 mW conduction loss at 12 A, critical for >95% efficiency in high-current DC/DC converters.
I_D (continuous)	14 A @ T_J = 150 °C - Supports high-current secondary-side rectification in server VRMs and telecom POL modules.
Q_g	13.2–20 nC - Low total gate charge reduces driver power demand and enables >1 MHz switching in compact converters.
R_thJC	2.0–2.4 °C/W - Direct thermal path from die to PCB enables board-level heat spreading without heatsinks in space-constrained designs.
V_GS(th)	1.0–3.0 V - Ensures reliable turn-on with standard 3.3 V microcontroller GPIO or PWM controller outputs.
t_r/t_f	10–15 ns - Fast switching transitions minimize overlap losses and EMI generation in high-frequency topologies.

Pinout & Package

SI7230DN-T1-E3 uses the PowerPAK® 1212-8 leadless surface-mount package (3.30 mm × 3.30 mm footprint, 1.05 mm height), with exposed drain pad on the bottom side for thermal and electrical connection. The top-side terminals are arranged in an 8-pin configuration optimized for high-current routing and minimal loop inductance.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications.
5, 6, 7, 8	Drain (D)	Four parallel drain terminals connect directly to the bottom-exposed drain pad, enabling low-inductance, high-current power delivery paths.
Center pad (bottom)	Drain (D)	Exposed copper drain pad provides primary thermal path to PCB and carries >90% of drain current in typical layouts.
Terminal 4 (top)	Gate (G)	Single gate terminal located adjacent to source pins to minimize gate loop area and suppress ringing during switching.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 0.012 Ω R_DS(on) in 3.3 mm × 3.3 mm footprint-enabling higher current density than SO-8 or TSOP-6 alternatives.
PWM-optimized switching	Low Q_gd/Q_gs ratio (4.3/5.3 nC) minimizes Miller plateau duration, improving controllability in hard-switched synchronous buck converters.
100% R_g tested	Guarantees gate resistance between 0.9–2.7 Ω per unit, eliminating variability in gate drive timing and reducing risk of shoot-through in half-bridge configurations.
Halogen-free construction	Complies with IEC 61249-2-21, supporting RoHS-compliant manufacturing and end-of-life recycling requirements for industrial and telecom equipment.
PowerPAK 1212-8 package	Provides 20× lower R_thJA than TSSOP-8 (66 vs. ~1300 °C/W), allowing 2× higher power dissipation in same PCB area without thermal derating.

Applications

Secondary Synchronous Rectifier	High-Side MOSFET in Synchronous Buck
Use Scenario: Used on the secondary side of isolated DC/DC converters (e.g., 48 V to 12 V telecom bricks) to replace Schottky diodes and reduce conduction losses. IC Role / Device Role / Timing Role: Acts as a controlled switch synchronized to primary-side switching, turning on during flyback phase to conduct load current with minimal V_SD. Use Value: Achieves <0.8 V forward drop versus >0.45 V for Schottky diodes, cutting rectifier losses by >40% and enabling >96% system efficiency at full load.	Use Scenario: Deployed as the upper switch in non-isolated synchronous buck converters powering CPUs, FPGAs, or ASICs in data center servers. IC Role / Device Role / Timing Role: Switches high-side node between input rail and inductor, requiring fast turn-on/turn-off and robust dV/dt immunity to prevent shoot-through. Use Value: Low Q_g and tight V_GS(th) tolerance enable clean gate drive with standard controllers, supporting 500 kHz–1 MHz operation without external gate drivers.
Point-of-Load (POL) Converter	USB-C Power Delivery Sink
Use Scenario: Integrated into compact 12 V to 3.3 V or 5 V POL modules mounted directly on motherboard near high-speed logic devices. IC Role / Device Role / Timing Role: Functions as main power switch in high-efficiency, low-profile buck regulators where thermal management is constrained by adjacent components. Use Value: PowerPAK 1212-8's 2.0–2.4 °C/W R_thJC allows full 14 A rating with only 2-layer PCB copper, eliminating need for thermal vias or heatsinks in dense layouts.	Use Scenario: Employed in USB-C PD sink circuits (e.g., laptop adapter input stage) to handle up to 20 V input with precise overcurrent protection and low quiescent loss. IC Role / Device Role / Timing Role: Serves as input-side pass transistor in programmable power supply front-end, operating in linear or switching mode depending on load conditions. Use Value: 30 V V_DS margin accommodates USB-C PD 20 V max with safety headroom; 0.016 Ω R_DS(on) @ 4.5 V ensures low dropout and minimal self-heating during 3 A charging.

Secondary Synchronous Rectifier

High-Side MOSFET in Synchronous Buck

Use Scenario: Used on the secondary side of isolated DC/DC converters (e.g., 48 V to 12 V telecom bricks) to replace Schottky diodes and reduce conduction losses.

IC Role / Device Role / Timing Role: Acts as a controlled switch synchronized to primary-side switching, turning on during flyback phase to conduct load current with minimal V_SD.

Use Value: Achieves <0.8 V forward drop versus >0.45 V for Schottky diodes, cutting rectifier losses by >40% and enabling >96% system efficiency at full load.

Use Scenario: Deployed as the upper switch in non-isolated synchronous buck converters powering CPUs, FPGAs, or ASICs in data center servers.

IC Role / Device Role / Timing Role: Switches high-side node between input rail and inductor, requiring fast turn-on/turn-off and robust dV/dt immunity to prevent shoot-through.

Use Value: Low Q_g and tight V_GS(th) tolerance enable clean gate drive with standard controllers, supporting 500 kHz–1 MHz operation without external gate drivers.

Point-of-Load (POL) Converter

USB-C Power Delivery Sink

Use Scenario: Integrated into compact 12 V to 3.3 V or 5 V POL modules mounted directly on motherboard near high-speed logic devices.

IC Role / Device Role / Timing Role: Functions as main power switch in high-efficiency, low-profile buck regulators where thermal management is constrained by adjacent components.

Use Value: PowerPAK 1212-8's 2.0–2.4 °C/W R_thJC allows full 14 A rating with only 2-layer PCB copper, eliminating need for thermal vias or heatsinks in dense layouts.

Use Scenario: Employed in USB-C PD sink circuits (e.g., laptop adapter input stage) to handle up to 20 V input with precise overcurrent protection and low quiescent loss.

IC Role / Device Role / Timing Role: Serves as input-side pass transistor in programmable power supply front-end, operating in linear or switching mode depending on load conditions.

Use Value: 30 V V_DS margin accommodates USB-C PD 20 V max with safety headroom; 0.016 Ω R_DS(on) @ 4.5 V ensures low dropout and minimal self-heating during 3 A charging.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7231DN-T1-E3	Same PowerPAK 1212-8 package and 30 V rating, but P-channel with −0.014 Ω R_DS(on) @ V_GS = −10 V; complementary topology only.	Used in high-side switch configurations requiring negative gate drive; not interchangeable in N-channel positions.	Select Si7231DN-T1-E3 only when designing dual-N/P synchronous rectifiers or level-shifted high-side drivers.
IRF7470PBF	SO-8 package, 30 V, 0.013 Ω R_DS(on) @ 10 V, but R_thJC = 3.0 °C/W and larger 5 mm × 6 mm footprint; no 100% R_g test.	Acceptable for lower-power or less thermally constrained designs where PCB area is not limiting.	Choose IRF7470PBF if legacy SO-8 layout reuse is required, but expect 25% higher thermal resistance and reduced high-frequency stability.

Compared with Si7231DN-T1-E3, SI7230DN-T1-E3 offers superior N-channel switching performance in synchronous rectification; compared with IRF7470PBF, it delivers 20% lower R_thJC, 40% smaller footprint, and guaranteed gate resistance-critical for high-reliability, high-density power systems.

Availability

SI7230DN-T1-E3 is available at Aetrix Electronics and suitable for DC/DC converters, synchronous buck regulators, and point-of-load power supplies requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for SI7230DN-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The Si7230DN product line was engineered specifically for high-efficiency, high-frequency DC/DC conversion in space-constrained computing, telecom, and industrial power systems-emphasizing low R_DS(on), fast switching, and advanced thermal packaging.

FAQ

What is the maximum continuous drain current rating for SI7230DN-T1-E3 at 70 °C ambient temperature?

The SI7230DN-T1-E3 supports 11 A continuous drain current at T_A = 70 °C under standard FR4 board mounting conditions. This rating reflects thermal derating due to increased junction-to-ambient resistance at elevated ambient temperatures and assumes adequate PCB copper area for heat spreading. The device's 2.0–2.4 °C/W R_thJC enables higher current capability when paired with multilayer boards or thermal vias.

Does SI7230DN-T1-E3 require special reflow soldering profile considerations?

Yes, SI7230DN-T1-E3 is a leadless PowerPAK 1212-8 package and requires adherence to Vishay's Pb-free reflow profile: peak temperature of 240 +5/−0 °C for 20–40 seconds, with ramp-up/down rates ≤6 °C/s. Manual soldering with an iron is not recommended due to thermal mass mismatch and risk of solder joint voiding. Full profile details are published in document 73257 on vishay.com.

Can SI7230DN-T1-E3 be used as a replacement for SO-8 MOSFETs in existing designs?

No, SI7230DN-T1-E3 is not a drop-in replacement for SO-8 MOSFETs due to its different footprint (3.3 mm × 3.3 mm PowerPAK 1212-8 vs. 5 mm × 6 mm SO-8), pinout (8 top-side terminals + bottom drain pad), and thermal interface. Layout redesign-including new land patterns, stencil apertures, and thermal copper-must be performed to leverage its performance advantages.

What is the significance of the "100% Rg tested" specification for SI7230DN-T1-E3?

The "100% Rg tested" specification means every SI7230DN-T1-E3 unit undergoes production testing to verify gate resistance falls within 0.9–2.7 Ω. This ensures predictable gate drive timing, consistent switching behavior across units, and reduced risk of shoot-through in half-bridge or synchronous rectifier configurations-especially critical in high-volume server and telecom power supplies.

How does the body diode performance of SI7230DN-T1-E3 impact its use in synchronous rectification?

The SI7230DN-T1-E3 body diode exhibits V_SD = 0.8–1.1 V at I_S = 3.2 A and t_rr = 25–40 ns, enabling efficient freewheeling during dead-time intervals. Its low reverse recovery charge minimizes voltage spikes and EMI, while fast recovery supports high-frequency operation without requiring external Schottky catch diodes in most synchronous buck implementations.

SI7230DN-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SI7230DN-T1-E3 FAQ

1.How can I place an order for SI7230DN-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7230DN-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7230DN-T1-E3 reliable?

The price and inventory of SI7230DN-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7230DN-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI7230DN-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7230DN-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7230DN-T1-E3?

SI7230DN-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7230DN-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7230DN-T1-E3?

For technical support, including SI7230DN-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7230DN-T1-E3 requirements.

6.How does Aetrix verify that SI7230DN-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI7230DN-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7230DN-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI7230DN-T1-E3?

All SI7230DN-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7230DN-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7230DN-T1-E3 part is unused and in its original packaging.

Return procedure for SI7230DN-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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