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Vishay Siliconix SI7302DN-T1-E3
- Part No.:
- SI7302DN-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SI7302DN-T1-E3.pdf
- Description:
- MOSFET N-CH 220V 8.4A PPAK1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:4,070
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Product details
Overview
SI7302DN-T1-E3 from Vishay Siliconix is an N-channel 220-V drain-source TrenchFET® power MOSFET in a PowerPAK 1212-8 package, with RDS(on) = 0.320 Ω at VGS = 10 V, 8.4-A continuous drain current at TC = 25 °C, and 9.1-nC total gate charge - optimized for primary-side switching in offline SMPS.
For engineers reviewing the SI7302DN-T1-E3 datasheet, SI7302DN-T1-E3 pinout, SI7302DN-T1-E3 application, or SI7302DN-T1-E3 equivalent, key selection criteria include its 220-V VDS, low Qg/RDS(on) ratio, halogen-free construction, thermal resistance (RthJC = 1.9 °C/W), and suitability for high-voltage flyback and resonant converters.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve high voltage blocking with low conduction loss. Its gate threshold voltage (VGS(th) = 2–4 V) supports standard 10-V gate drive, while its 645-pF input capacitance and 47-pF reverse transfer capacitance enable predictable switching behavior in hard-switched topologies.
The device features a fully rated body diode with 65–100-ns reverse recovery time and 163–250-nC Qrr, making it suitable for synchronous rectification and freewheeling roles where diode conduction occurs. Thermal design is supported by a low junction-to-case resistance (1.9 °C/W) and defined solder profile for leadless PowerPAK mounting.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 220 V - supports primary-side operation in universal-input AC/DC adapters up to 265 VAC. |
| RDS(on) | 0.320 Ω @ VGS = 10 V - enables <1 W conduction loss at 2.3 A, reducing heatsink requirements. |
| ID (continuous) | 8.4 A @ TC = 25 °C - sufficient for 65–100 W flyback designs with margin. |
| Qg | 9.1 nC @ VGS = 6 V - allows efficient 6-V gate driving without excessive driver loss. |
| RthJC | 1.9 °C/W (typ.) - enables direct thermal coupling to PCB copper or heatsink for >40 W power handling. |
| VGS(th) | 2–4 V - ensures reliable turn-on with standard PWM controllers and avoids unintended conduction near 0 V. |
| Ciss | 645 pF @ VDS = 15 V - defines Miller plateau duration and gate drive strength requirement. |
Pinout & Package
SI7302DN-T1-E3 uses the PowerPAK 1212-8 surface-mount package: 3.3 mm × 3.3 mm footprint, leadless, bottom-termination design with exposed drain pads for thermal and electrical performance. The package has no leads; terminals are soldered directly to PCB pads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Drain (D) | Four parallel drain terminals connected to internal die source metallization - provide low-inductance, high-current path and thermal conduction to PCB. |
| 5 | Gate (G) | Single gate input terminal - requires controlled 0–10 V drive; 0.9–2.7 Ω gate resistance limits ringing and EMI. |
| 6, 7, 8 | Source (S) | Three parallel source terminals - form low-impedance return path for load current and reference for gate drive. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Enables 220-V breakdown with sub-0.35 Ω RDS(on) in 3.3 mm × 3.3 mm footprint - improves power density vs. planar MOSFETs. |
| 100 % Rg tested | Guarantees gate resistance between 0.9–2.7 Ω - ensures consistent switching speed and reduces gate driver design uncertainty. |
| Halogen-free construction | Meets IEC 61249-2-21 - satisfies RoHS-compliant and green electronics requirements without compromising reliability. |
| Exposed drain thermal pad | Provides direct thermal path from junction to PCB - achieves 1.9 °C/W RthJC without external heatsink in properly designed layouts. |
Applications
| AC/DC Flyback Converters | Industrial DC/DC Modules |
|---|---|
Use Scenario: Primary-side switch in 36–100 W offline flyback power supplies for industrial HMIs and PLC I/O modules. IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer during each PWM cycle; operates at 65–130 kHz with hard switching. Use Value: 220-V rating accommodates 265 VAC surge transients; low Qg minimizes driver loss at high frequency. | Use Scenario: Main switching transistor in isolated 48 V input DC/DC modules powering fieldbus interfaces and sensor signal conditioning. IC Role / Device Role / Timing Role: Primary-side power switch in forward or half-bridge topology; handles repetitive 50–100 ns turn-off transitions. Use Value: 8.4-A ID and 52-W PD support 60 W output with 25 °C case temperature; RthJC enables compact thermal layout. |
| LED Driver Power Stages | Telecom Power Supplies |
Use Scenario: Switching element in constant-current LED drivers for streetlight and high-bay lighting systems operating from 220 VAC. IC Role / Device Role / Timing Role: High-side switch regulating bulk capacitor discharge into LED string; subject to high dV/dt and repetitive avalanche stress. Use Value: 220-V VDS provides 50 V margin above peak line voltage; robust body diode handles inductive kickback during demagnetization. | Use Scenario: Primary switch in telecom-grade 48 V input offline PSUs meeting IEC 62368-1 and EN 61000-3-2 Class A. IC Role / Device Role / Timing Role: Voltage-controlled current switch in active clamp forward or LLC resonant converter; driven by isolated gate driver. Use Value: Low Ciss/Crss ratio (645/47 pF) improves ZVS capability; halogen-free construction meets telecom environmental compliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP220N22F6 | 220 V VDS, RDS(on) = 0.28 Ω @ 10 V, but larger TO-220FP package and higher Qg (25 nC). | Requires heatsink and through-hole assembly; less suitable for space-constrained SMT designs. | Choose STP220N22F6 only when board-level thermal mass is available and leaded packaging is preferred for serviceability. |
| IRF640NPBF | 200 V VDS, RDS(on) = 0.18 Ω @ 10 V, TO-220 package, no halogen-free certification. | Lacks 20 V margin for 265 VAC surge; not compliant with latest green electronics directives. | Select IRF640NPBF only for legacy 200–230 VAC systems where halogen content is unrestricted and thermal budget permits larger footprint. |
Compared with STP220N22F6 and IRF640NPBF, SI7302DN-T1-E3 delivers superior power density via its 3.3 mm × 3.3 mm PowerPAK package, lower thermal resistance, and halogen-free compliance - making it optimal for modern compact, high-efficiency, and environmentally regulated power designs.
Availability
SI7302DN-T1-E3 is available at Aetrix Electronics and suitable for AC/DC flyback converters, industrial DC/DC modules, and LED driver power stages requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.
Supply support for SI7302DN-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on high-reliability, high-efficiency power solutions.
The Si7302DN product line targets high-voltage, medium-current switching applications in offline power conversion, delivering optimized RDS(on)/Qg trade-offs and robust thermal performance in miniature leadless packages.
FAQ
What is the maximum continuous drain current rating for SI7302DN-T1-E3 at 70 °C case temperature?
The SI7302DN-T1-E3 supports 6.7 A continuous drain current at TC = 70 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK 1212-8 package under sustained power dissipation. Designers must ensure PCB copper area and airflow maintain case temperature ≤ 70 °C to sustain this current level reliably in the SI7302DN-T1-E3.
Does SI7302DN-T1-E3 have a specified avalanche rating?
The SI7302DN-T1-E3 datasheet does not specify unclamped inductive switching (UIS) or single-pulse avalanche energy (EAS) ratings. While the device can withstand limited repetitive avalanche due to its 220-V VDS rating, Vishay does not guarantee or characterize avalanche performance for SI7302DN-T1-E3. System-level protection (e.g., snubbers, clamps) is recommended when inductive turn-off stress is expected in SI7302DN-T1-E3 applications.
Can SI7302DN-T1-E3 be used with 4.5-V gate drive?
Yes, SI7302DN-T1-E3 is characterized down to VGS = 4.5 V, with RDS(on) = 0.340 Ω at 6 V and typical gfs = 11 S. At 4.5 V, it remains functional but exhibits higher on-resistance - confirmed by the On-Resistance vs. Gate-to-Source Voltage curve showing ~0.45 Ω at 4.5 V. For optimal efficiency, SI7302DN-T1-E3 should be driven at ≥6 V in production designs.
What is the recommended soldering profile for SI7302DN-T1-E3?
The SI7302DN-T1-E3 requires reflow soldering per Vishay document 73257, with peak temperature of 260 °C for ≤ 30 seconds. Manual soldering with an iron is not recommended due to its leadless PowerPAK 1212-8 construction and exposed copper terminations. Reflow profiles must avoid thermal shock and ensure full wetting of all eight terminals - critical for both electrical integrity and thermal performance of SI7302DN-T1-E3.
Is SI7302DN-T1-E3 pin-compatible with other PowerPAK 1212-8 MOSFETs?
SI7302DN-T1-E3 shares the standard PowerPAK 1212-8 footprint and pinout (D-D-D-D-G-S-S-S), but pin compatibility alone does not guarantee functional interchangeability. Substituting other devices requires verification of VDS, RDS(on), Qg, and thermal characteristics. For example, while SI7302DN-T1-E3 and Si7850DP share the same package, their voltage ratings (220 V vs. 150 V) and gate charges differ significantly - confirming that SI7302DN-T1-E3 must be evaluated per circuit requirements, not assumed compatible.
SI7302DN-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 220 V
- Current - Continuous Drain (Id) @ 25°C:
- 8.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 320mOhm @ 2.3A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 21 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 645 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.8W (Ta), 52W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SI7302DN-T1-E3 FAQ
1.How can I place an order for SI7302DN-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7302DN-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7302DN-T1-E3 reliable?
The price and inventory of SI7302DN-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7302DN-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI7302DN-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7302DN-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7302DN-T1-E3?
SI7302DN-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7302DN-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7302DN-T1-E3?
For technical support, including SI7302DN-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7302DN-T1-E3 requirements.
6.How does Aetrix verify that SI7302DN-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI7302DN-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7302DN-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI7302DN-T1-E3?
All SI7302DN-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7302DN-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7302DN-T1-E3 part is unused and in its original packaging.
Return procedure for SI7302DN-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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