Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7308DN-T1-E3

Name: SI7308DN-T1-E3
Brand: Vishay Siliconix
SKU: SI7308DN-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SI7308DN-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SI7308DN-T1-E3.pdf

Description:: MOSFET N-CH 60V 6A PPAK1212-8

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,660

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SI7308DN-T1-E3 from Vishay Siliconix is an N-channel 60-V TrenchFET® Power MOSFET in a PowerPAK® 1212-8 package, with R_DS(on) = 0.058 Ω at V_GS = 10 V, 6 A continuous drain current (T_J = 150 °C), 13 nC total gate charge, and 5 °C/W junction-to-case thermal resistance. It serves as a high-efficiency switching element in CCFL inverters and Class-D audio amplifiers.

For engineers reviewing the SI7308DN-T1-E3 datasheet, SI7308DN-T1-E3 pinout, SI7308DN-T1-E3 application, or SI7308DN-T1-E3 equivalent, key selection criteria include its low-profile (1.07 mm) leadless PowerPAK 1212-8 package, halogen-free Pb-free construction, and verified thermal performance under surface-mount reflow per J-STD-020.

Technical Context

This MOSFET uses trench-gate silicon technology to achieve low R_DS(on) and fast switching with Q_g = 13 nC (V_GS = 10 V) and t_r/t_f = 65/10 ns (V_GEN = 4.5 V). Its body diode exhibits V_SD = 0.8–1.2 V at I_S = 1.7 A and t_rr = 30–60 ns, supporting synchronous rectification and flyback recovery.

The PowerPAK 1212-8 package features exposed copper drain pads on the bottom side for direct thermal conduction, delivering R_thJC = 5 °C/W (typical) and R_thJA = 31 °C/W (typical) on FR4 - enabling compact, thermally robust designs without heatsinks in moderate-power applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - supports DC bus voltages up to 48 V nominal systems with 20 % margin.
R_DS(on)	0.058 Ω at V_GS = 10 V - enables ≤ 1.9 W conduction loss at 6 A, critical for efficiency in battery-powered inverters.
I_D (continuous)	6 A at T_C = 25 °C - package-limited current rating suitable for medium-power switching stages.
Q_g	13 nC at V_DS = 30 V, V_GS = 10 V - determines gate drive power and switching speed in PWM circuits.
R_thJC	5 °C/W (typical) - allows direct thermal coupling to PCB copper, reducing junction temperature rise by >40 °C vs. TSSOP-8.
V_GS(th)	1–3 V - ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers.
C_iss	665 pF - impacts high-frequency gate drive impedance and EMI filtering requirements.

Pinout & Package

PowerPAK® 1212-8 is a leadless, surface-mount package measuring 3.30 mm × 3.30 mm × 1.07 mm, with exposed drain copper on the bottom side for thermal and electrical connection. The top-side terminals are arranged in a single-row 8-pin layout (S-S-G-D-D-D-D-D).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Common source connection for internal parallel die; low-inductance return path for load current.
4	Gate (G)	Control input; requires <13 nC charge for full enhancement; compatible with 3.3 V/5 V microcontroller outputs.
5–8	Drain (D)	High-current output node; electrically and thermally connected to bottom-side exposed copper pad.

Key Features

Feature	Design Value
TrenchFET® silicon process	Delivers 0.058 Ω R_DS(on) in 3.3 mm² footprint - 2× lower on-resistance than comparable TSOP-6 MOSFETs.
PowerPAK® 1212-8 package	1.07 mm profile and exposed drain pad reduce R_thJC to 5 °C/W - eliminates need for external heatsink in 3–5 W applications.
Halogen-free & Pb-free	Complies with IEC 61249-2-21 and RoHS Directive 2011/65/EU - suitable for consumer and industrial end-equipment.
Low gate charge (13 nC)	Reduces driver power dissipation and enables >500 kHz switching in Class-D amplifiers without excessive gate loss.
Fast body diode (t_rr = 30–60 ns)	Minimizes reverse recovery loss in hard-switched topologies like half-bridge inverters and synchronous buck converters.

Applications

CCFL Inverter	Class-D Audio Amplifier
Use Scenario: High-voltage AC generation for cold-cathode fluorescent lamp backlighting in LCD monitors and industrial displays. IC Role / Device Role: Primary switching transistor in resonant half-bridge topology, operating at 50–100 kHz with 60 V blocking capability. Use Value: Low R_DS(on) and fast switching minimize conduction and switching losses, extending lamp life and improving power efficiency >85 %.	Use Scenario: Output stage in portable or automotive Class-D amplifiers driving 4–8 Ω speakers with 10–20 W output power. IC Role / Device Role: High-side and low-side switch in half-bridge configuration, handling peak currents up to 20 A pulsed. Use Value: 13 nC Q_g and 65 ns rise time enable clean PWM edge control, reducing THD+N and EMI emissions in audio band.
DC-DC Synchronous Buck Converter	Motor Drive Half-Bridge
Use Scenario: 12 V input to 3.3/5 V output conversion in embedded controllers and FPGA power supplies. IC Role / Device Role: Synchronous rectifier (low-side) in 300–1000 kHz buck regulator, replacing Schottky diode to improve efficiency. Use Value: Body diode V_SD = 0.8–1.2 V and t_rr = 30–60 ns reduce reverse recovery loss, increasing light-load efficiency by 3–5 %.	Use Scenario: H-bridge leg in 24 V brushed DC motor control for robotics, HVAC actuators, and industrial valves. IC Role / Device Role: Low-side switch controlling motor current direction and PWM duty cycle, rated for 6 A continuous operation. Use Value: 5 °C/W R_thJC maintains T_J < 125 °C at full load on 1 oz. FR4, eliminating thermal derating in space-constrained enclosures.

CCFL Inverter

Class-D Audio Amplifier

Use Scenario: High-voltage AC generation for cold-cathode fluorescent lamp backlighting in LCD monitors and industrial displays.

IC Role / Device Role: Primary switching transistor in resonant half-bridge topology, operating at 50–100 kHz with 60 V blocking capability.

Use Value: Low R_DS(on) and fast switching minimize conduction and switching losses, extending lamp life and improving power efficiency >85 %.

Use Scenario: Output stage in portable or automotive Class-D amplifiers driving 4–8 Ω speakers with 10–20 W output power.

IC Role / Device Role: High-side and low-side switch in half-bridge configuration, handling peak currents up to 20 A pulsed.

Use Value: 13 nC Q_g and 65 ns rise time enable clean PWM edge control, reducing THD+N and EMI emissions in audio band.

DC-DC Synchronous Buck Converter

Motor Drive Half-Bridge

Use Scenario: 12 V input to 3.3/5 V output conversion in embedded controllers and FPGA power supplies.

IC Role / Device Role: Synchronous rectifier (low-side) in 300–1000 kHz buck regulator, replacing Schottky diode to improve efficiency.

Use Value: Body diode V_SD = 0.8–1.2 V and t_rr = 30–60 ns reduce reverse recovery loss, increasing light-load efficiency by 3–5 %.

Use Scenario: H-bridge leg in 24 V brushed DC motor control for robotics, HVAC actuators, and industrial valves.

IC Role / Device Role: Low-side switch controlling motor current direction and PWM duty cycle, rated for 6 A continuous operation.

Use Value: 5 °C/W R_thJC maintains T_J < 125 °C at full load on 1 oz. FR4, eliminating thermal derating in space-constrained enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60-V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7312DN-T1-E3	R_DS(on) = 0.035 Ω @ 10 V (lower), Q_g = 17 nC (higher), same PowerPAK 1212-8 package.	Better conduction loss but higher gate drive demand; suited for <300 kHz fixed-frequency converters.	Select when lowest R_DS(on) is prioritized over switching speed and gate drive simplicity.
IRF7308TRPBF	R_DS(on) = 0.055 Ω @ 10 V, Q_g = 12 nC, SO-8 package (larger footprint, R_thJC = 20 °C/W).	Higher thermal resistance requires heatsinking above 2 W; less suitable for ultra-thin designs.	Select only if SO-8 footprint compatibility is required and board space is not constrained.

Compared with SI7308DN-T1-E3, Si7312DN-T1-E3 offers lower conduction loss at the cost of increased gate drive energy, while IRF7308TRPBF trades thermal performance for legacy package compatibility - making SI7308DN-T1-E3 optimal for space- and thermally sensitive 60 V switching applications.

Availability

SI7308DN-T1-E3 is available at Aetrix Electronics and suitable for CCFL inverters, Class-D audio amplifiers, synchronous buck converters, and motor drive half-bridges requiring stable component supply and long-term manufacturability.

Supply support for SI7308DN-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The Si73xxDN series targets high-density power conversion and audio switching applications, leveraging TrenchFET® and PowerPAK® technologies to deliver low R_DS(on), fast switching, and industry-leading thermal performance in miniature packages.

FAQ

What is the maximum continuous drain current rating for SI7308DN-T1-E3 at 70 °C case temperature?

The SI7308DN-T1-E3 is rated for 6 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and assumes proper PCB copper area for thermal conduction; exceeding this current without adequate heatsinking risks junction temperature exceeding 150 °C.

Does SI7308DN-T1-E3 support 3.3 V logic-level gate drive?

Yes, SI7308DN-T1-E3 has a gate threshold voltage V_GS(th) of 1–3 V and delivers R_DS(on) = 0.072 Ω at V_GS = 4.5 V, making it fully compatible with 3.3 V microcontroller GPIOs when used with appropriate gate resistor sizing to manage dV/dt and ringing.

What is the recommended solder reflow profile for SI7308DN-T1-E3?

SI7308DN-T1-E3 requires lead-free reflow per J-STD-020, with peak temperature of 240 °C ± 0 °C for 20–40 seconds, time above 180 °C between 70–180 seconds, and ramp-down rate ≤6 °C/s. Full profile details are published in Vishay document 73257.

Can SI7308DN-T1-E3 be used in avalanche mode?

Yes, SI7308DN-T1-E3 is rated for single-pulse avalanche energy E_AS = 6.1 mJ and avalanche current I_AS = 11 A (L = 0.1 mH), enabling limited use in inductive switching circuits without external snubbers - though repetitive avalanche operation is not guaranteed.

Is the PowerPAK 1212-8 package of SI7308DN-T1-E3 compatible with standard reflow assembly processes?

Yes, SI7308DN-T1-E3 is qualified for standard lead-free reflow per JEDEC J-STD-020, including preheat, soak, and reflow zones. Its PowerPAK 1212-8 package is designed for automated SMT placement and reflow, with no special stencil or thermal compensation required beyond Vishay's published profile.

SI7308DN-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 58mOhm @ 5.4A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 665 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.2W (Ta), 19.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SI7308DN-T1-E3 FAQ

1.How can I place an order for SI7308DN-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7308DN-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7308DN-T1-E3 reliable?

The price and inventory of SI7308DN-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7308DN-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI7308DN-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7308DN-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7308DN-T1-E3?

SI7308DN-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7308DN-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7308DN-T1-E3?

For technical support, including SI7308DN-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7308DN-T1-E3 requirements.

6.How does Aetrix verify that SI7308DN-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI7308DN-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7308DN-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI7308DN-T1-E3?

All SI7308DN-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7308DN-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7308DN-T1-E3 part is unused and in its original packaging.

Return procedure for SI7308DN-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …