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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7322DN-T1-E3

Name: SI7322DN-T1-E3
Brand: Vishay Siliconix
SKU: SI7322DN-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7322DN-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SI7322DN-T1-E3.pdf

Description:: MOSFET N-CH 100V 18A PPAK 1212-8

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Product details

Overview

SI7322DN-T1-E3 from Vishay Siliconix is an N-channel 100-V TrenchFET® power MOSFET in PowerPAK® 1212-8 package, delivering R_DS(on) = 0.048 Ω (typ) at V_GS = 10 V, 5.5 A, with 13 nC total gate charge and 100% UIS tested - used as primary switch in isolated DC/DC converters.

For engineers reviewing the SI7322DN-T1-E3 datasheet, SI7322DN-T1-E3 pinout, SI7322DN-T1-E3 application, or SI7322DN-T1-E3 equivalent, key selection criteria include its 100 V V_DS, low thermal resistance (R_thJC = 1.9 °C/W), leadless PowerPAK 1212-8 footprint, and avalanche-rated operation for high-reliability power switching.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for high-voltage switching with fast turn-on/turn-off dynamics: t_d(on) = 10 ns (typ), t_r = 10 ns (typ), t_d(off) = 12 ns (typ), and t_f = 10 ns (typ) under 50 V V_DS, 4.4 A load conditions. Its gate threshold voltage (V_GS(th)) ranges 2.5–4.4 V, enabling robust drive compatibility with standard 10 V logic-level controllers.

The device integrates a body diode with V_SD = 0.8–1.2 V at I_S = 4.4 A and reverse recovery time t_rr = 40–60 ns, supporting synchronous rectification and flyback snubbing. Thermal design leverages the exposed drain pad of the PowerPAK 1212-8 package to achieve R_thJC = 1.9 °C/W (max 2.4 °C/W), minimizing junction-to-case temperature rise during continuous conduction.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports primary-side switching in 48 V input DC/DC systems with 2× safety margin
R_DS(on) max @ 10 V	0.058 Ω - enables ≤0.35 W conduction loss at 2.5 A RMS in continuous mode
Q_g typ	13 nC - allows efficient gate driving with <100 mW switching loss at 500 kHz
I_D continuous @ T_C = 25 °C	18 A - sustains full-load current without derating when mounted on heatsinked PCB
R_thJC max	2.4 °C/W - ensures <45 °C junction rise above case at 18 W dissipation
E_AS	18 mJ - withstands single-pulse inductive energy spikes in hard-switched topologies
t_rr of body diode	40–60 ns - reduces cross-conduction losses in quasi-resonant and LLC phase-shifted converters

Pinout & Package

PowerPAK® 1212-8 is a leadless surface-mount package with 3.3 mm × 3.3 mm footprint, 1.05 mm height, and exposed drain pad on bottom side for direct thermal coupling to PCB copper. The package uses copper-clip construction to minimize parasitic inductance and enhance current handling.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching
5, 6, 7, 8	Drain (D)	Four parallel drain terminals connect to exposed bottom pad - primary thermal and current path to PCB
4 (top side)	Gate (G)	Single gate terminal located adjacent to source pins - minimizes gate loop area for EMI control

Key Features

Feature	Design Value
TrenchFET® technology	Enables 0.048 Ω R_DS(on) at 100 V rating - 30% lower on-resistance than planar MOSFETs in same package
100% UIS tested	Guarantees ruggedness against unclamped inductive switching events up to 19 A and 18 mJ
PowerPAK 1212-8 package	Delivers R_thJC = 1.9 °C/W - 5× better thermal performance than TSSOP-8 and 10× better than SO-8
Body diode t_rr	40–60 ns - supports ZVS/ZCS transitions in resonant converters without external Schottky
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709C - suitable for automotive and industrial end equipment

Applications

Isolated Flyback Converter	Active Clamp Forward Converter
Use Scenario: Primary-side switch in 24–48 V input, 12 V/10 A output telecom power supply with 100 kHz switching frequency. IC Role / Device Role / Timing Role: High-side N-channel MOSFET driven by transformer-isolated gate driver; handles 100 V blocking and 10 A peak drain current. Use Value: Low Q_g (13 nC) and fast switching (t_f = 10 ns) reduce driver power and dead-time losses, improving efficiency by ≥0.8% at full load.	Use Scenario: Main switch in 48 V input, 28 V/8 A active clamp forward converter for industrial PLC power rails. IC Role / Device Role / Timing Role: Synchronized primary switch operating with 50% duty cycle and 200 ns dead time; clamped by auxiliary winding and capacitor. Use Value: 100% UIS-tested ruggedness prevents failure during clamp capacitor discharge transients; R_DS(on) = 0.048 Ω limits conduction loss to <1.2 W at 8 A.
Half-Bridge DC/DC Module	High-Voltage LED Driver
Use Scenario: Upper switch in half-bridge topology powering 36 V battery charging circuit with 200 kHz PWM. IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET requiring low C_iss (750 pF) and minimal Q_gd (3 nC) to suppress shoot-through risk. Use Value: Crss = 25 pF and Q_gd/Q_gs ratio < 0.82 enable stable gate drive with standard 1 Ω series resistor - no Miller clamping needed.	Use Scenario: Series-pass switch controlling constant-current 700 mA output for 48 V string of 12 high-brightness LEDs. IC Role / Device Role / Timing Role: Linear-mode or PWM-controlled high-side switch; dissipates up to 15 W during dimming transients. Use Value: R_thJC = 1.9 °C/W and 18 mJ E_AS allow safe operation under short-circuit and hot-swap conditions without thermal runaway.

Isolated Flyback Converter

Active Clamp Forward Converter

Use Scenario: Primary-side switch in 24–48 V input, 12 V/10 A output telecom power supply with 100 kHz switching frequency.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET driven by transformer-isolated gate driver; handles 100 V blocking and 10 A peak drain current.

Use Value: Low Q_g (13 nC) and fast switching (t_f = 10 ns) reduce driver power and dead-time losses, improving efficiency by ≥0.8% at full load.

Use Scenario: Main switch in 48 V input, 28 V/8 A active clamp forward converter for industrial PLC power rails.

IC Role / Device Role / Timing Role: Synchronized primary switch operating with 50% duty cycle and 200 ns dead time; clamped by auxiliary winding and capacitor.

Use Value: 100% UIS-tested ruggedness prevents failure during clamp capacitor discharge transients; R_DS(on) = 0.048 Ω limits conduction loss to <1.2 W at 8 A.

Half-Bridge DC/DC Module

High-Voltage LED Driver

Use Scenario: Upper switch in half-bridge topology powering 36 V battery charging circuit with 200 kHz PWM.

IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET requiring low C_iss (750 pF) and minimal Q_gd (3 nC) to suppress shoot-through risk.

Use Value: Crss = 25 pF and Q_gd/Q_gs ratio < 0.82 enable stable gate drive with standard 1 Ω series resistor - no Miller clamping needed.

Use Scenario: Series-pass switch controlling constant-current 700 mA output for 48 V string of 12 high-brightness LEDs.

IC Role / Device Role / Timing Role: Linear-mode or PWM-controlled high-side switch; dissipates up to 15 W during dimming transients.

Use Value: R_thJC = 1.9 °C/W and 18 mJ E_AS allow safe operation under short-circuit and hot-swap conditions without thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100-V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7332DP-T1-E3	Same PowerPAK 1212-8 package, but dual N-channel configuration; each channel has R_DS(on) = 0.058 Ω at 10 V, 18 A rating	Requires PCB layout change for dual-channel gate drive and source separation; suited for synchronous buck or H-bridge	Select when needing two matched 100-V switches in one footprint - not drop-in for single-channel SI7322DN-T1-E3
IRF7470TRPBF	SO-8 package, R_DS(on) = 0.055 Ω at 10 V, but R_thJC = 20 °C/W (10× higher) and Q_g = 21 nC (62% higher)	Limited to lower-frequency (<100 kHz), lower-power (<5 W) applications due to thermal and switching constraints	Choose only if SO-8 footprint is mandatory and thermal headroom exceeds 40 °C/W; not recommended for space-constrained or high-efficiency designs

Compared with SI7322DN-T1-E3, Si7332DP-T1-E3 offers dual-channel integration at identical thermal performance but requires redesign, while IRF7470TRPBF trades significant thermal and switching performance for legacy package compatibility - neither is pin-compatible, and both demand layout or system-level validation.

Availability

SI7322DN-T1-E3 is available at Aetrix Electronics and suitable for isolated DC/DC converters, primary-side switching in telecom power supplies, and high-voltage LED drivers requiring stable component supply across production lifecycles.

Supply support for SI7322DN-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SI7322DN-T1-E3 belongs to Vishay's TrenchFET® PowerPAK® family, engineered specifically for high-density, high-efficiency DC/DC conversion in space-constrained industrial and telecom systems.

FAQ

What is the maximum continuous drain current rating for SI7322DN-T1-E3 at 70 °C case temperature?

The SI7322DN-T1-E3 supports 16 A continuous drain current at T_C = 70 °C, as specified in its Absolute Maximum Ratings table. This rating reflects thermal derating from the 18 A value at 25 °C case temperature and assumes proper PCB copper area and airflow. Designers must verify actual board-level thermal resistance to ensure junction temperature remains below 150 °C under worst-case load conditions for the SI7322DN-T1-E3.

Does SI7322DN-T1-E3 require a gate resistor for reliable operation in a 500 kHz flyback converter?

Yes - a 1–5 Ω gate resistor is recommended for the SI7322DN-T1-E3 in 500 kHz flyback applications to dampen ringing caused by gate-drain capacitance (Crss = 25 pF) and PCB trace inductance. Without it, overshoot exceeding ±20 V can occur during fast switching (t_f = 10 ns), risking gate oxide damage. The SI7322DN-T1-E3 gate threshold (2.5–4.4 V) and low Q_g (13 nC) make it sensitive to uncontrolled edge rates, so controlled turn-on/turn-off via gate resistance is essential for long-term reliability of the SI7322DN-T1-E3.

Can SI7322DN-T1-E3 be used in linear mode for constant-current LED regulation?

Yes - the SI7322DN-T1-E3 is rated for linear-mode operation with Safe Operating Area (SOA) defined up to 100 V and 18 A for pulse widths ≤ 10 ms. Its R_thJC = 1.9 °C/W and 18 mJ avalanche energy rating support short-duration constant-current regulation, such as LED dimming transients. However, sustained linear operation above 2 W requires substantial copper pour and thermal vias; the SI7322DN-T1-E3 is not intended for continuous high-power linear use without active cooling.

What is the body diode forward voltage of SI7322DN-T1-E3 at 4.4 A and room temperature?

The body diode forward voltage (V_SD) of the SI7322DN-T1-E3 is specified as 0.8–1.2 V at I_S = 4.4 A and V_GS = 0 V, measured at T_J = 25 °C. This range reflects process variation and ensures predictable freewheeling behavior in synchronous rectifier or boost PFC stages. At elevated temperatures, V_SD decreases by ~2 mV/°C, which is typical for silicon MOSFET body diodes and confirmed in the SI7322DN-T1-E3's Typical Characteristics curves.

Is SI7322DN-T1-E3 compatible with lead-free reflow profiles per JEDEC J-STD-020?

Yes - the SI7322DN-T1-E3 is qualified for lead-free reflow per JEDEC J-STD-020, with peak temperature up to 260 °C for 20–40 seconds. Vishay specifies a maximum ramp-down rate of 6 °C/s and requires adherence to the profile in document 73257. The PowerPAK 1212-8 package's copper-clip construction and lead (Pb)-free terminations ensure mechanical integrity and solder joint reliability under this profile - critical for repeatable assembly of the SI7322DN-T1-E3 in high-volume manufacturing.

SI7322DN-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 58mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 4.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 750 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 52W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SI7322DN-T1-E3 FAQ

1.How can I place an order for SI7322DN-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7322DN-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7322DN-T1-E3 reliable?

The price and inventory of SI7322DN-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7322DN-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI7322DN-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7322DN-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7322DN-T1-E3?

SI7322DN-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7322DN-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7322DN-T1-E3?

For technical support, including SI7322DN-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7322DN-T1-E3 requirements.

6.How does Aetrix verify that SI7322DN-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI7322DN-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7322DN-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI7322DN-T1-E3?

All SI7322DN-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7322DN-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7322DN-T1-E3 part is unused and in its original packaging.

Return procedure for SI7322DN-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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