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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7322DN-T1-GE3

Name: SI7322DN-T1-GE3
Brand: Vishay Siliconix
SKU: SI7322DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7322DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SI7322DN-T1-GE3.pdf

Description:: MOSFET N-CH 100V 18A PPAK1212-8

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Product details

Overview

SI7322DN-T1-GE3 from Vishay Siliconix is an N-channel 100-V TrenchFET® power MOSFET in PowerPAK® 1212-8 package, delivering R_DS(on) = 0.048 Ω (typ) at V_GS = 10 V, 5.5 A, with 13 nC total gate charge and 18 A continuous drain current (T_C = 25 °C). It serves as a primary switch in isolated DC/DC converters requiring high efficiency and compact thermal footprint.

For engineers reviewing the SI7322DN-T1-GE3 datasheet, SI7322DN-T1-GE3 pinout, SI7322DN-T1-GE3 application, or SI7322DN-T1-GE3 equivalent, key selection criteria include its 100 V V_DS, ultra-low R_DS(on) at 10 V drive, 100 % UIS tested ruggedness, junction-to-case thermal resistance of 1.9 °C/W, and lead-free/halogen-free PowerPAK 1212-8 packaging optimized for space-constrained power stages.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching performance. Its gate threshold voltage (2.5–4.4 V) supports standard 10 V gate drivers, while the 13 nC total gate charge enables efficient high-frequency operation in synchronous rectification and primary-side switching topologies.

The device features a robust body diode with t_rr = 40–60 ns and Q_rr = 70–105 nC, and is rated for single-pulse avalanche energy (E_AS) of 18 mJ - critical for flyback and forward converter primary switches subjected to inductive turn-off stress.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports input voltages up to 85 V DC in offline or industrial DC/DC designs with margin
R_DS(on) max @ V_GS = 10 V	0.058 Ω - ensures <1 W conduction loss at 4.1 A RMS in typical 12–48 V output converters
Q_g typ.	13 nC - enables efficient 300–500 kHz switching with moderate gate driver strength (e.g., 1–2 A peak)
I_D continuous @ T_C = 25 °C	18 A - supports high-current primary-side switching without external heatsink under adequate PCB copper
R_thJC max	2.4 °C/W - allows direct thermal path from die to PCB ground plane, enabling >40 W dissipation with 100 cm² 2-oz copper
V_GS(th)	2.5–4.4 V - compatible with standard logic-level and PWM controller gate outputs
E_AS	18 mJ - withstands repetitive inductive switching stress in non-clamped topologies

Pinout & Package

SI7322DN-T1-GE3 uses the leadless PowerPAK® 1212-8 package (3.3 mm × 3.3 mm × 1.05 mm), with exposed drain pad on bottom for optimal thermal conduction. The top-side terminals are arranged in single-row configuration: pins 1–4 = Source, pin 5 = Gate, pins 6–8 = Drain.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source	Common source node for internal parallel FET cells; must be connected to low-impedance source return path
5	Gate	Control terminal; requires low-inductance gate loop layout to minimize switching overshoot and EMI
6, 7, 8	Drain	High-side switching node; connects directly to exposed bottom drain pad for thermal and current handling

Key Features

Feature	Design Value
TrenchFET® technology	Enables 0.048 Ω R_DS(on) in 3.3 mm × 3.3 mm footprint - reduces conduction loss by >30 % vs. comparable SO-8 MOSFETs
100 % UIS tested	Guarantees ruggedness against unclamped inductive switching events common in flyback and LLC primary circuits
PowerPAK 1212-8 package	Delivers 1.9 °C/W R_thJC - achieves ~40 °C junction rise at 2 W dissipation on 2-in² 2-oz copper, versus >100 °C for TSSOP-8
Lead (Pb)-free and halogen-free	Meets RoHS Directive 2011/65/EU and JEDEC JS709C - suitable for automotive and industrial end-equipment compliance
Body diode t_rr = 40–60 ns	Minimizes reverse recovery loss during synchronous rectification or freewheeling in buck-derived topologies

Applications

Isolated Flyback Converter Primary Switch	Industrial 48 V Input DC/DC Module
Use Scenario: High-efficiency 65 W flyback converter operating at 100 kHz with universal AC input (85–265 VAC) and 12 V/5.4 A output. IC Role / Device Role / Timing Role: Primary-side N-channel switch controlling energy transfer; driven by UC384X-based controller with 10 V gate drive. Use Value: 0.048 Ω R_DS(on) limits conduction loss to <0.9 W at full load; 100 % UIS rating prevents failure during transformer leakage inductance turn-off spikes.	Use Scenario: Compact 150 W quarter-brick DC/DC module converting 48 V input to 12 V/12.5 A output using active clamp forward topology. IC Role / Device Role / Timing Role: Main switching FET in primary leg; synchronized to 300 kHz PWM with 10 V gate drive and <20 ns dead-time control. Use Value: Low Q_g (13 nC) and fast switching (t_d(on)/t_f ≤ 15 ns) reduce switching loss; PowerPAK thermal performance maintains T_J < 115 °C at full load with 4-layer board.
Telecom PoE++ Midspan PSE Switch	Automotive 24 V DC/DC Pre-regulator
Use Scenario: IEEE 802.3bt Type 4 (90 W) Power Sourcing Equipment (PSE) midspan injector delivering power over Category 6A cabling. IC Role / Device Role / Timing Role: High-side switch in DC feed circuit; controlled via digital interface with current sensing and fault protection. Use Value: 100 V V_DS accommodates 57 V open-circuit PoE voltage plus safety margin; 18 A I_D supports dual-port simultaneous delivery with headroom.	Use Scenario: 24 V battery-fed pre-regulator supplying 12 V to infotainment system in commercial vehicle, operating across -40 to +105 °C ambient. IC Role / Device Role / Timing Role: Buck converter high-side switch; driven by automotive-grade PWM controller with bootstrap gate drive. Use Value: V_GS(th) stability over temperature (-10 mV/°C coefficient) ensures consistent turn-on; -55 to +150 °C T_J rating supports extended automotive thermal range.

Isolated Flyback Converter Primary Switch

Industrial 48 V Input DC/DC Module

Use Scenario: High-efficiency 65 W flyback converter operating at 100 kHz with universal AC input (85–265 VAC) and 12 V/5.4 A output.

IC Role / Device Role / Timing Role: Primary-side N-channel switch controlling energy transfer; driven by UC384X-based controller with 10 V gate drive.

Use Value: 0.048 Ω R_DS(on) limits conduction loss to <0.9 W at full load; 100 % UIS rating prevents failure during transformer leakage inductance turn-off spikes.

Use Scenario: Compact 150 W quarter-brick DC/DC module converting 48 V input to 12 V/12.5 A output using active clamp forward topology.

IC Role / Device Role / Timing Role: Main switching FET in primary leg; synchronized to 300 kHz PWM with 10 V gate drive and <20 ns dead-time control.

Use Value: Low Q_g (13 nC) and fast switching (t_d(on)/t_f ≤ 15 ns) reduce switching loss; PowerPAK thermal performance maintains T_J < 115 °C at full load with 4-layer board.

Telecom PoE++ Midspan PSE Switch

Automotive 24 V DC/DC Pre-regulator

Use Scenario: IEEE 802.3bt Type 4 (90 W) Power Sourcing Equipment (PSE) midspan injector delivering power over Category 6A cabling.

IC Role / Device Role / Timing Role: High-side switch in DC feed circuit; controlled via digital interface with current sensing and fault protection.

Use Value: 100 V V_DS accommodates 57 V open-circuit PoE voltage plus safety margin; 18 A I_D supports dual-port simultaneous delivery with headroom.

Use Scenario: 24 V battery-fed pre-regulator supplying 12 V to infotainment system in commercial vehicle, operating across -40 to +105 °C ambient.

IC Role / Device Role / Timing Role: Buck converter high-side switch; driven by automotive-grade PWM controller with bootstrap gate drive.

Use Value: V_GS(th) stability over temperature (-10 mV/°C coefficient) ensures consistent turn-on; -55 to +150 °C T_J rating supports extended automotive thermal range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100-V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7332DP-T1-GE3	Same PowerPAK 1212-8 package, but dual N-channel; each channel has R_DS(on) = 0.058 Ω @ 10 V, 15 A per channel	Designed for half-bridge or dual-switch configurations; not a drop-in replacement for single-channel use	Select only when dual independent switches are required in same footprint; requires PCB redesign for gate/source routing
IRF7470TRPBF	SO-8 package, R_DS(on) = 0.055 Ω @ 10 V, 14 A, R_thJC = 3.0 °C/W, no UIS rating specified	Larger footprint (5 mm × 6 mm), higher thermal resistance, and untested UIS limit suitability in rugged flyback designs	Acceptable for cost-sensitive, lower-power (<60 W), non-UIS-critical applications where SO-8 is already standardized

Compared with SI7322DN-T1-GE3, Si7332DP-T1-GE3 offers dual-channel integration but requires layout changes and adds complexity for single-switch needs; IRF7470TRPBF provides similar R_DS(on) in legacy SO-8 but sacrifices thermal performance and avalanche ruggedness - making SI7322DN-T1-GE3 preferable for high-density, high-reliability 100 V switching.

Availability

SI7322DN-T1-GE3 is available at Aetrix Electronics and suitable for isolated DC/DC converters, telecom power supplies, and industrial 24–48 V systems requiring stable component supply, long-term manufacturability, and RoHS-compliant packaging.

Supply support for SI7322DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.

The SI7322DN-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK® family, engineered for high-current, high-voltage switching in space-constrained power conversion systems where thermal performance and ruggedness are critical.

FAQ

What is the maximum continuous drain current rating for SI7322DN-T1-GE3 at 70 °C case temperature?

The SI7322DN-T1-GE3 is rated for 16 A continuous drain current at T_C = 70 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits under sustained operation and assumes proper PCB copper area and airflow. At T_C = 25 °C, the rating increases to 18 A. Designers must verify actual case temperature under load using thermal simulation or measurement to ensure safe operation within this envelope. The SI7322DN-T1-GE3 datasheet provides derating curves for ambient and case temperatures.

Does SI7322DN-T1-GE3 support 5 V gate drive, or is 10 V required for full performance?

The SI7322DN-T1-GE3 has a gate threshold voltage (V_GS(th)) range of 2.5–4.4 V, so it will turn on with 5 V gate drive; however, its R_DS(on) specification (0.048 Ω typ) is guaranteed only at V_GS = 10 V. At 5 V, R_DS(on) rises significantly - typically >0.12 Ω - increasing conduction loss. For optimal efficiency and thermal performance, 10 V gate drive is recommended. The SI7322DN-T1-GE3 is not classified as a true logic-level MOSFET.

How does the PowerPAK 1212-8 package of SI7322DN-T1-GE3 improve thermal performance compared to SO-8?

The SI7322DN-T1-GE3 in PowerPAK 1212-8 achieves R_thJC = 1.9 °C/W (max), versus ~20 °C/W for standard SO-8 - a 10× improvement. This results from the exposed drain pad directly bonded to PCB copper, eliminating bond wire and plastic thermal barriers. In practice, this allows the SI7322DN-T1-GE3 to dissipate >2× the power of an SO-8 MOSFET at the same junction temperature, or run ~40 °C cooler under identical conditions. The smaller 3.3 mm × 3.3 mm footprint also saves board space.

Is SI7322DN-T1-GE3 suitable for avalanche-rated applications like flyback converters?

Yes - the SI7322DN-T1-GE3 is 100 % UIS (Unclamped Inductive Switching) tested per JEDEC JESD22-A116, with rated single-pulse avalanche energy E_AS = 18 mJ and I_AS = 19 A. This makes it suitable for flyback, forward, and other topologies where the MOSFET must absorb inductive energy during turn-off. Unlike many MOSFETs without UIS validation, the SI7322DN-T1-GE3 provides documented ruggedness for these stress conditions, reducing design risk in high-reliability power supplies.

What is the gate charge profile of SI7322DN-T1-GE3, and how does it affect switching loss?

The SI7322DN-T1-GE3 has Q_g = 13 nC (typ), Q_gs = 3.7 nC, and Q_gd = 3 nC at V_DS = 50 V and V_GS = 10 V. This low total gate charge enables fast switching transitions - t_d(on)/t_f ≤ 15 ns - minimizing overlap loss. When paired with a 1 A gate driver, the effective switching time is ~13 ns, keeping switching loss below 0.3 W at 300 kHz. The relatively low Q_gd/Q_g ratio (~23 %) also improves Miller immunity in high-dV/dt environments. These values are confirmed in the SI7322DN-T1-GE3 datasheet Figure 7 (Gate Charge).

SI7322DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 58mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 4.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 750 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 52W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SI7322DN-T1-GE3 FAQ

1.How can I place an order for SI7322DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7322DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7322DN-T1-GE3 reliable?

The price and inventory of SI7322DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7322DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI7322DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7322DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7322DN-T1-GE3?

SI7322DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7322DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7322DN-T1-GE3?

For technical support, including SI7322DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7322DN-T1-GE3 requirements.

6.How does Aetrix verify that SI7322DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI7322DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7322DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI7322DN-T1-GE3?

All SI7322DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7322DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7322DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SI7322DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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