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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7326DN-T1-E3

Name: SI7326DN-T1-E3
Brand: Vishay Siliconix
SKU: SI7326DN-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7326DN-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SI7326DN-T1-E3.pdf

Description:: MOSFET N-CH 30V 6.5A PPAK 1212-8

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Product details

Overview

SI7326DN-T1-E3 from Vishay Siliconix is an N-channel 30-V TrenchFET® Power MOSFET in a PowerPAK® 1212-8 package, delivering R_DS(on) = 0.0195 Ω at V_GS = 10 V and 0.030 Ω at V_GS = 4.5 V, rated for 10 A continuous drain current (T_A = 25 °C), and optimized for high-efficiency DC/DC conversion in space-constrained power stages.

For engineers reviewing the SI7326DN-T1-E3 datasheet, SI7326DN-T1-E3 pinout, SI7326DN-T1-E3 application, or SI7326DN-T1-E3 equivalent, key selection criteria include its low thermal resistance (R_thJC = 4.5 °C/W typ.), 100 % R_g tested gate resistance, halogen-free construction, and compatibility with lead-free reflow profiles up to 240 °C peak.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve fast switching with low gate charge (Q_g = 8.7–13 nC at V_DS = 15 V, V_GS = 5 V) and low output capacitance (C_iss, C_oss, C_rss characterized across V_DS). Its threshold voltage range (V_GS(th) = 0.8–1.8 V) ensures reliable turn-on with standard logic-level drivers.

The PowerPAK 1212-8 package features an exposed drain pad on the bottom side for direct thermal conduction, enabling junction-to-case thermal resistance as low as 4.5 °C/W and junction-to-ambient of 28 °C/W (t ≤ 10 s), supporting high-current operation without heatsinks in properly designed PCB layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 12 V input DC/DC stages with margin
R_DS(on) @ V_GS = 10 V	0.0195 Ω - Enables <195 mW conduction loss at 10 A, critical for high-efficiency synchronous rectification
R_DS(on) @ V_GS = 4.5 V	0.030 Ω - Supports logic-level gate drive from 3.3 V or 5 V controllers without level-shifting
I_D (continuous, T_A = 25 °C)	10 A - Sustains full-load current in compact buck converters with minimal derating
Q_g	8.7–13 nC - Low total gate charge reduces driver power and enables >1 MHz switching in high-frequency designs
R_thJC	4.5 °C/W (typ.) - Direct thermal path from die to PCB copper allows efficient heat removal via internal ground/power planes
V_GS(th)	0.8–1.8 V - Ensures robust turn-on with standard microcontroller GPIOs and avoids false triggering near 0 V

Pinout & Package

SI7326DN-T1-E3 is housed in a leadless PowerPAK® 1212-8 package (3.30 mm × 3.30 mm, 1.07 mm height) with an exposed drain pad on the bottom surface for thermal and electrical connection. The top-side terminals are arranged in an 8-pin configuration with three parallel source pins, one gate pin, and four parallel drain pins.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3 (S)	Source	Three dedicated source terminals reduce source inductance and improve current sharing in high-di/dt switching
4 (G)	Gate	Single gate input with R_g tested - enables predictable turn-on timing and minimizes gate oscillation risk
5–8 (D)	Drain	Four parallel drain terminals connect to the bottom-exposed drain pad - provides low-inductance, high-current path to PCB copper

Key Features

Feature	Design Value
TrenchFET® technology	Delivers industry-leading R_DS(on) × area efficiency - 0.0195 Ω at 10 V in only 10.9 mm² footprint
PowerPAK® 1212-8 package	Reduces R_thJA by >50 % vs. TSSOP-8 - achieves 28 °C/W (10 s) without thermal vias or heatsinks
100 % R_g tested	Guarantees gate resistance between 0.5–2.2 Ω - eliminates need for external gate resistors in most applications
Halogen-free construction	Complies with IEC 61249-2-21 - meets RoHS and environmental requirements for industrial and telecom equipment
Lead (Pb)-free finish	Qualified for JEDEC J-STD-020D reflow - supports peak temperature of 240 °C with 20–40 s dwell time

Applications

Point-of-Load DC/DC Converter	USB-C PD Power Path
Use Scenario: High-density 5–12 V input to 3.3/5/12 V output buck regulator in server VRMs or telecom modules. IC Role / Device Role / Timing Role: Synchronous high-side or low-side switch operating at 500 kHz–2 MHz with tight duty-cycle control. Use Value: Low R_DS(on) and Q_g minimize conduction and switching losses, enabling >95 % efficiency at 10 A load while maintaining thermal headroom in 12 mm² board area.	Use Scenario: Input protection and power path management in portable devices supporting USB-C Power Delivery up to 100 W. IC Role / Device Role / Timing Role: Load switch controlling 20 V max input rail with fast overcurrent response and controlled inrush. Use Value: Logic-level V_GS(th) and low R_DS(on) allow direct drive from USB-PD controller GPIOs and limit voltage drop to <300 mV at 5 A, preserving bus voltage compliance.
Industrial Motor Driver Half-Bridge	LED Backlight Boost Converter
Use Scenario: Low-voltage (≤24 V) brushed DC motor control in factory automation or robotics actuators. IC Role / Device Role / Timing Role: Low-side switch in H-bridge topology with PWM frequencies up to 20 kHz and repetitive avalanche capability. Use Value: 15 A single-pulse avalanche rating (I_AS) and 11 mJ E_AS absorb inductive kickback without snubbers, improving system reliability during rapid direction reversal.	Use Scenario: High-efficiency boost stage driving 4–8 series white LEDs from 3.3 V or 5 V battery sources in thin displays. IC Role / Device Role / Timing Role: Main switching transistor in current-mode boost converter operating at 1–3 MHz. Use Value: Fast turn-on delay (8–15 ns) and rise time (12–20 ns) support stable high-frequency operation, reducing output capacitor size and EMI filter complexity.

Point-of-Load DC/DC Converter

USB-C PD Power Path

Use Scenario: High-density 5–12 V input to 3.3/5/12 V output buck regulator in server VRMs or telecom modules.

IC Role / Device Role / Timing Role: Synchronous high-side or low-side switch operating at 500 kHz–2 MHz with tight duty-cycle control.

Use Value: Low R_DS(on) and Q_g minimize conduction and switching losses, enabling >95 % efficiency at 10 A load while maintaining thermal headroom in 12 mm² board area.

Use Scenario: Input protection and power path management in portable devices supporting USB-C Power Delivery up to 100 W.

IC Role / Device Role / Timing Role: Load switch controlling 20 V max input rail with fast overcurrent response and controlled inrush.

Use Value: Logic-level V_GS(th) and low R_DS(on) allow direct drive from USB-PD controller GPIOs and limit voltage drop to <300 mV at 5 A, preserving bus voltage compliance.

Industrial Motor Driver Half-Bridge

LED Backlight Boost Converter

Use Scenario: Low-voltage (≤24 V) brushed DC motor control in factory automation or robotics actuators.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge topology with PWM frequencies up to 20 kHz and repetitive avalanche capability.

Use Value: 15 A single-pulse avalanche rating (I_AS) and 11 mJ E_AS absorb inductive kickback without snubbers, improving system reliability during rapid direction reversal.

Use Scenario: High-efficiency boost stage driving 4–8 series white LEDs from 3.3 V or 5 V battery sources in thin displays.

IC Role / Device Role / Timing Role: Main switching transistor in current-mode boost converter operating at 1–3 MHz.

Use Value: Fast turn-on delay (8–15 ns) and rise time (12–20 ns) support stable high-frequency operation, reducing output capacitor size and EMI filter complexity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7312DN-T1-E3	Lower R_DS(on) (0.0125 Ω @ 10 V) but higher Q_g (15.5 nC); same PowerPAK 1212-8 package and pinout	Better conduction loss at high current; slightly slower switching due to higher gate charge	Select when efficiency at >15 A DC is prioritized over switching frequency >1 MHz
DMN3026LSD-13	Higher R_DS(on) (0.028 Ω @ 4.5 V), larger SO-8 package, no R_g test, higher R_thJA (60 °C/W)	Limited to lower-power, lower-density designs where thermal budget permits larger footprint	Choose only if legacy SO-8 layout reuse is required and 30 % higher conduction loss is acceptable

Compared with Si7312DN-T1-E3, SI7326DN-T1-E3 trades 35 % higher R_DS(on) for 20 % lower Q_g, favoring high-frequency operation; versus DMN3026LSD-13, it delivers 4× better thermal performance and 30 % lower on-resistance in half the footprint - making SI7326DN-T1-E3 optimal for miniaturized, high-efficiency power stages.

Availability

SI7326DN-T1-E3 is available at Aetrix Electronics and suitable for point-of-load DC/DC converters, USB-C PD power path management, and industrial motor driver half-bridges requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for SI7326DN-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.

The Si73xxDN family targets high-density power conversion, delivering trench-based N-channel MOSFETs in ultra-thin PowerPAK packages for applications demanding low R_DS(on), fast switching, and superior thermal performance in minimal PCB area.

FAQ

What is the maximum continuous drain current rating for SI7326DN-T1-E3 at 70 °C ambient temperature?

The SI7326DN-T1-E3 is rated for 7.5 A continuous drain current at T_A = 70 °C under standard mounting conditions on a 1" × 1" FR4 board. This derating reflects thermal limits imposed by junction-to-ambient resistance (R_thJA = 65 °C/W steady state). For higher current operation, PCB copper area and layer stack must be optimized per Vishay Application Note AN822 to reduce thermal impedance.

Does SI7326DN-T1-E3 support logic-level gate drive from a 3.3 V microcontroller?

Yes, SI7326DN-T1-E3 supports logic-level gate drive from 3.3 V sources: its R_DS(on) is specified at 0.030 Ω with V_GS = 4.5 V, and typical V_GS(th) is 1.3 V (max 1.8 V), ensuring full enhancement well within 3.3 V margin. However, conduction loss will be ~50 % higher than at 10 V drive, so system efficiency should be verified at actual operating current.

What is the avalanche energy rating of SI7326DN-T1-E3 and how is it validated?

The SI7326DN-T1-E3 has a single-pulse avalanche energy rating (E_AS) of 11 mJ, measured under standardized test conditions (L = 0.1 mH, I_AS = 15 A). This rating is guaranteed by design and verified through qualification testing per JEDEC standards - not production-tested per unit - and applies to transient inductive energy absorption during switching transitions or fault events.

Can SI7326DN-T1-E3 be hand-soldered using a soldering iron?

No, manual soldering with a soldering iron is not recommended for SI7326DN-T1-E3. As a leadless PowerPAK® 1212-8 device, it requires controlled reflow profiling (peak 240 °C, 20–40 s dwell) per JEDEC J-STD-020D. Hand-soldering risks insufficient bottom-side solder joint formation on the exposed drain pad and thermal damage to the die due to localized overheating.

Is SI7326DN-T1-E3 halogen-free and RoHS-compliant?

Yes, SI7326DN-T1-E3 is both halogen-free per IEC 61249-2-21 and RoHS-compliant. The "-E3" suffix explicitly denotes lead (Pb)-free termination, and Vishay documentation confirms halogen-free material content for this ordering variant. Full compliance documentation is available in Vishay's PPAP package for this part number.

SI7326DN-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 6.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 19.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 1.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 5 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SI7326DN-T1-E3 FAQ

1.How can I place an order for SI7326DN-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7326DN-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7326DN-T1-E3 reliable?

The price and inventory of SI7326DN-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7326DN-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI7326DN-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7326DN-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7326DN-T1-E3?

SI7326DN-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7326DN-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7326DN-T1-E3?

For technical support, including SI7326DN-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7326DN-T1-E3 requirements.

6.How does Aetrix verify that SI7326DN-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI7326DN-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7326DN-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI7326DN-T1-E3?

All SI7326DN-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7326DN-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7326DN-T1-E3 part is unused and in its original packaging.

Return procedure for SI7326DN-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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