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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7326DN-T1-GE3

Name: SI7326DN-T1-GE3
Brand: Vishay Siliconix
SKU: SI7326DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7326DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SI7326DN-T1-GE3.pdf

Description:: MOSFET N-CH 30V 6.5A PPAK 1212-8

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Product details

Overview

SI7326DN-T1-GE3 from Vishay Siliconix is a N-channel 30-V (D-S) TrenchFET® Power MOSFET in PowerPAK® 1212-8 package, delivering R_DS(on) = 0.0195 Ω at V_GS = 10 V and 0.030 Ω at V_GS = 4.5 V, rated for 10 A continuous drain current (T_J = 150 °C), and optimized for high-efficiency DC/DC conversion in space-constrained power stages.

For engineers reviewing the SI7326DN-T1-GE3 datasheet, SI7326DN-T1-GE3 pinout, SI7326DN-T1-GE3 application, or SI7326DN-T1-GE3 equivalent, this page provides verified device identity, thermal resistance data (R_thJC = 4.5 °C/W typ.), gate charge (Q_g = 8.7 nC typ.), avalanche energy rating (E_AS = 11 mJ), and halogen-free compliance per IEC 61249-2-21 - all confirmed for the exact SI7326DN-T1-GE3 variant.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with Q_g = 8.7 nC (typ.) and t_f = 14 ns (typ.). Its PowerPAK 1212-8 package features an exposed drain pad for ultra-low junction-to-case thermal resistance (R_thJC = 4.5 °C/W typ.) and 1.07 mm profile, enabling high-power density in compact layouts.

The device supports logic-level drive (V_GS(th) = 0.8–1.8 V) and exhibits robust unclamped inductive switching capability (I_AS = 15 A, E_AS = 11 mJ). It integrates 100 % R_g testing and is qualified for operation from –55 °C to +150 °C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; defines safe operating range in buck, boost, and synchronous rectifier topologies.
R_DS(on) @ 10 V	0.0195 Ω - Confirmed on-resistance at standard gate drive; enables <195 mW conduction loss at 10 A.
R_DS(on) @ 4.5 V	0.030 Ω - Verified logic-level performance; supports direct drive from 3.3 V or 5 V controllers without level shifting.
I_D (continuous)	10 A @ T_J = 150 °C - Thermal-limited current rating; requires PCB copper area management per PowerPAK 1212-8 land pattern guidelines.
Q_g	8.7 nC (typ.) - Total gate charge; determines driver strength requirement and switching loss in high-frequency converters.
R_thJC	4.5 °C/W (typ.) - Junction-to-case thermal resistance; enables efficient heat transfer to PCB copper via exposed drain pad.
E_AS	11 mJ - Single-pulse avalanche energy; quantifies ruggedness under inductive load switching stress.

Pinout & Package

SI7326DN-T1-GE3 uses the leadless PowerPAK® 1212-8 package (3.30 mm × 3.30 mm footprint, 1.07 mm height) with exposed drain thermal pad on bottom side. The package has no leads; soldering relies on perimeter terminations and bottom-side copper contact.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications.
5, 6, 7, 8	Drain (D)	Four parallel drain terminals connected to exposed bottom pad; primary thermal path and high-current return path.
4 (center)	Gate (G)	Single gate terminal located centrally between source and drain rows; minimizes gate loop inductance for stable high-speed switching.

Key Features

Feature	Design Value
TrenchFET® silicon process	Enables 0.0195 Ω R_DS(on) at 10 V in 3.3 mm × 3.3 mm footprint - 2× die area vs. TSOP-6 with 20× better thermal performance.
PowerPAK® 1212-8 package	1.07 mm profile and exposed drain pad deliver R_thJC = 4.5 °C/W (typ.), reducing junction temperature rise by >40 °C vs. TSSOP-8 under identical 2 W dissipation.
100 % R_g tested	Guarantees gate resistance ≤ 2.2 Ω, ensuring consistent turn-on timing and minimizing risk of oscillation in high-speed gate drivers.
Halogen-free construction	Complies with IEC 61249-2-21; eliminates brominated flame retardants without compromising moisture sensitivity or solderability.
Logic-level V_GS(th)	0.8–1.8 V threshold enables direct interface with 3.3 V microcontrollers and PWM controllers, eliminating external level shifters.

Applications

High-Efficiency Buck Converters	Synchronous Rectification
Use Scenario: Primary switch in 3.3 V–12 V input, 0.8 V–5 V output buck regulators for FPGA, ASIC, and SoC core supplies. IC Role / Device Role: High-side power switch handling up to 10 A DC load with minimal conduction loss. Use Value: 0.0195 Ω R_DS(on) at 10 V reduces I²R loss to 1.95 W at 10 A, improving full-load efficiency by ≥1.2 % over comparable 0.025 Ω MOSFETs.	Use Scenario: Low-side switch in isolated DC/DC modules (e.g., 48 V–12 V telecom bricks) replacing Schottky diodes. IC Role / Device Role: Synchronous rectifier controlled by external gate driver or controller IC. Use Value: 0.030 Ω R_DS(on) at 4.5 V enables <300 mV forward drop at 10 A, cutting rectifier loss by >60 % versus 0.5 V Schottky diode.
USB-C PD Power Delivery	Industrial Motor Control Drivers
Use Scenario: Load switch in USB-C port controllers managing up to 100 W (20 V/5 A) power path with overcurrent protection. IC Role / Device Role: Hot-swap FET controlling VBUS connection with fast turn-off during fault events. Use Value: 15 A single-pulse avalanche rating (I_AS) and 11 mJ E_AS withstand transient inductive kickback during hot-plug disconnect.	Use Scenario: Half-bridge high-side or low-side switch in 24 V BLDC motor gate driver modules for factory automation. IC Role / Device Role: Power stage switch operating at 20–100 kHz PWM frequency with 10 A peak phase current. Use Value: 8.7 nC Q_g and 14 ns fall time enable <150 ns total switching transition, limiting switching loss to <120 mW at 50 kHz/10 A.

High-Efficiency Buck Converters

Synchronous Rectification

Use Scenario: Primary switch in 3.3 V–12 V input, 0.8 V–5 V output buck regulators for FPGA, ASIC, and SoC core supplies.

IC Role / Device Role: High-side power switch handling up to 10 A DC load with minimal conduction loss.

Use Value: 0.0195 Ω R_DS(on) at 10 V reduces I²R loss to 1.95 W at 10 A, improving full-load efficiency by ≥1.2 % over comparable 0.025 Ω MOSFETs.

Use Scenario: Low-side switch in isolated DC/DC modules (e.g., 48 V–12 V telecom bricks) replacing Schottky diodes.

IC Role / Device Role: Synchronous rectifier controlled by external gate driver or controller IC.

Use Value: 0.030 Ω R_DS(on) at 4.5 V enables <300 mV forward drop at 10 A, cutting rectifier loss by >60 % versus 0.5 V Schottky diode.

USB-C PD Power Delivery

Industrial Motor Control Drivers

Use Scenario: Load switch in USB-C port controllers managing up to 100 W (20 V/5 A) power path with overcurrent protection.

IC Role / Device Role: Hot-swap FET controlling VBUS connection with fast turn-off during fault events.

Use Value: 15 A single-pulse avalanche rating (I_AS) and 11 mJ E_AS withstand transient inductive kickback during hot-plug disconnect.

Use Scenario: Half-bridge high-side or low-side switch in 24 V BLDC motor gate driver modules for factory automation.

IC Role / Device Role: Power stage switch operating at 20–100 kHz PWM frequency with 10 A peak phase current.

Use Value: 8.7 nC Q_g and 14 ns fall time enable <150 ns total switching transition, limiting switching loss to <120 mW at 50 kHz/10 A.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7312DN-T1-GE3	30 V, R_DS(on) = 0.028 Ω @ 4.5 V (vs. 0.030 Ω), same PowerPAK 1212-8 package and pinout.	Marginally lower gate charge (7.5 nC) but higher R_DS(on); suited for cost-sensitive 5–8 A designs where 2.5 mΩ penalty is acceptable.	Select when prioritizing gate drive efficiency over conduction loss in mid-current applications.
DMN3025LSD-13	30 V, R_DS(on) = 0.025 Ω @ 4.5 V, SO-8 package (larger footprint, R_thJA = 62 °C/W vs. 65 °C/W for SI7326DN-T1-GE3).	Higher thermal resistance limits power density; requires larger PCB area for equivalent thermal performance.	Choose only if legacy SO-8 layout reuse is mandatory and board space permits 5.2 mm × 6.2 mm footprint.

Compared with SI7326DN-T1-GE3, Si7312DN-T1-GE3 offers slightly faster switching but higher conduction loss, while DMN3025LSD-13 trades compact size for thermal derating and layout inflexibility - making SI7326DN-T1-GE3 optimal for new designs demanding best-in-class R_DS(on)/Q_g balance in minimal area.

Availability

SI7326DN-T1-GE3 is available at Aetrix Electronics and suitable for high-density DC/DC converters, USB-C power delivery systems, and industrial motor control drivers requiring stable component supply, halogen-free compliance, and repeatable thermal performance across production volumes.

Supply support for SI7326DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The Si73xx family targets high-frequency, high-current power conversion applications, designed specifically to maximize power density and thermal efficiency in space-constrained DC/DC stages using advanced trench silicon and PowerPAK packaging.

FAQ

What is the maximum continuous drain current rating for SI7326DN-T1-GE3 at 70 °C ambient?

The SI7326DN-T1-GE3 is rated for 7.5 A continuous drain current at T_A = 70 °C, as specified in the Absolute Maximum Ratings table under "Continuous Drain Current (T_J = 150 °C)" with derating applied. This value assumes proper PCB copper area per Vishay's recommended PowerPAK 1212-8 land pattern and natural convection cooling.

Does SI7326DN-T1-GE3 support 3.3 V gate drive in practical applications?

Yes, SI7326DN-T1-GE3 supports 3.3 V gate drive: its gate threshold voltage V_GS(th) is 0.8–1.8 V, and R_DS(on) is characterized at 4.5 V (0.030 Ω). At 3.3 V, typical R_DS(on) remains below 0.045 Ω, enabling functional operation in logic-level applications - though full 10 A capability requires ≥4.5 V drive per datasheet conditions.

What is the thermal resistance from junction to ambient for SI7326DN-T1-GE3 under steady-state conditions?

The SI7326DN-T1-GE3 has a maximum steady-state junction-to-ambient thermal resistance (R_thJA) of 81 °C/W, with a typical value of 65 °C/W. This rating assumes surface mounting on a 1" × 1" FR4 board per datasheet test condition; actual performance improves significantly with added PCB copper area per Vishay AN822 guidelines.

Is SI7326DN-T1-GE3 suitable for avalanche-rated applications?

Yes, SI7326DN-T1-GE3 is rated for unclamped inductive switching: it specifies 15 A single-pulse avalanche current (I_AS) and 11 mJ single-pulse avalanche energy (E_AS). These values are validated per JEDEC JESD24-1 and apply directly to the SI7326DN-T1-GE3 variant as tested and documented in Vishay document 74444.

How does the PowerPAK 1212-8 package of SI7326DN-T1-GE3 compare thermally to SO-8?

The PowerPAK 1212-8 package used in SI7326DN-T1-GE3 delivers R_thJC = 4.5 °C/W (typ.), which is ~8× better than standard SO-8 (≈20 °C/W). Under identical 2 W dissipation on a 45 °C board, SI7326DN-T1-GE3 junction temperature rises only 4.8 °C versus >40 °C for SO-8 - preserving R_DS(on) stability and enabling higher current density.

SI7326DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 6.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 19.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 1.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 5 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SI7326DN-T1-GE3 FAQ

1.How can I place an order for SI7326DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7326DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7326DN-T1-GE3 reliable?

The price and inventory of SI7326DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7326DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI7326DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7326DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7326DN-T1-GE3?

SI7326DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7326DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7326DN-T1-GE3?

For technical support, including SI7326DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7326DN-T1-GE3 requirements.

6.How does Aetrix verify that SI7326DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI7326DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7326DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI7326DN-T1-GE3?

All SI7326DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7326DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7326DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SI7326DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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