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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7328DN-T1-E3

Name: SI7328DN-T1-E3
Brand: Vishay Siliconix
SKU: SI7328DN-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7328DN-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SI7328DN-T1-E3.pdf

Description:: MOSFET N-CH 30V 35A PPAK 1212-8

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Product details

Overview

SI7328DN-T1-E3 from Vishay Siliconix is a N-channel 30-V (D-S) TrenchFET® Power MOSFET in PowerPAK® 1212-8 package, with R_DS(on) = 6.6 mΩ at V_GS = 10 V, 35 A continuous drain current (T_J = 150 °C), and 21 nC total gate charge - optimized for high-efficiency synchronous rectification in notebook DC/DC converters.

For engineers reviewing the SI7328DN-T1-E3 datasheet, SI7328DN-T1-E3 pinout, SI7328DN-T1-E3 application, or SI7328DN-T1-E3 equivalent, key selection criteria include low R_DS(on) at 4.5 V (7.6 mΩ), ultra-low thermal resistance (R_thJC = 1.9 °C/W), lead-free RoHS-compliant construction, and validated performance in space-constrained, thermally demanding point-of-load regulators.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching dynamics. Its PowerPAK 1212-8 package features an exposed drain pad for direct thermal conduction and a 1.07 mm profile ideal for thin-profile notebooks.

The device supports gate drive voltages from 4.5 V to 10 V, delivers 97 S forward transconductance at 18.9 A, and exhibits 140 pF reverse transfer capacitance (C_rss) - enabling efficient operation in high-frequency synchronous buck converters up to 1 MHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - supports input rails up to 24 V nominal with margin for transient spikes in notebook power stages.
R_DS(on) @ 10 V	6.6 mΩ - enables <1 W conduction loss at 35 A, critical for >95 % efficiency in 12 V → 1.2 V conversion.
R_DS(on) @ 4.5 V	7.6 mΩ - ensures robust turn-on with standard 5 V logic-level gate drivers in compact DC/DC modules.
Q_g	21 nC - balances switching speed and gate driver loading for optimal trade-off between E_on/E_off and gate loss.
R_thJC	1.9 °C/W - allows >40 W power dissipation with ≤80 °C junction rise over case, enabling high-current operation without heatsinks.
I_D (cont)	35 A (T_C = 25 °C) - package-limited current rating suitable for primary-side switches in multi-phase VRMs.
V_GS(th)	0.6–1.5 V - ensures reliable enhancement-mode turn-on while minimizing shoot-through risk in synchronous topology.

Pinout & Package

SI7328DN-T1-E3 is housed in a leadless PowerPAK® 1212-8 package (3.30 mm × 3.30 mm, 1.07 mm height) with exposed drain thermal pad on bottom side. The top-side terminals are arranged in single-row configuration: pins 1–3 = Source, pin 4 = Gate, pins 5–8 = Drain.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common source node for internal parallel die; requires low-inductance connection to ground plane.
4	Gate	Control terminal; 100 % R_g tested for consistent switching timing and reduced gate oscillation risk.
5, 6, 7, 8	Drain	High-current output node; exposed copper pad on bottom provides primary thermal path to PCB.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 30 % lower R_DS(on) vs. planar MOSFETs of same die size, improving power density in VRM designs.
PowerPAK® 1212-8 package	Reduces footprint by >40 % vs. TSSOP-8 while achieving 20× better thermal performance than TSSOP-8.
100 % R_g tested	Guarantees gate resistance within 0.5–1.8 Ω range, ensuring predictable turn-on delay and reducing layout sensitivity.
Low Q_gd/Q_g ratio	2.5 nC / 21 nC = 12 % - minimizes Miller effect, enabling stable operation with moderate gate resistors in high-dV/dt environments.
Halogen-free option available	Si7328DN-T1-GE3 variant meets IEC 61249-2-21 requirements without compromising electrical performance.

Applications

Synchronous Rectifier in Notebook CPU VRM	DC/DC Converter in Ultrabook Power Supply
Use Scenario: Used as low-side switch in 2-phase 12 V → 1.2 V buck converter supplying Intel Core i7 processor. IC Role / Device Role / Timing Role: N-channel synchronous rectifier replacing Schottky diode to reduce conduction loss and improve light-load efficiency. Use Value: 6.6 mΩ R_DS(on) cuts conduction loss by 65 % vs. 20 mΩ alternative, enabling >94 % efficiency at 20 A load.	Use Scenario: Integrated into compact 12 mm × 12 mm PMIC module powering DDR4 memory subsystem. IC Role / Device Role / Timing Role: High-current power switch operating at 500 kHz with 4.5 V gate drive from integrated controller. Use Value: 7.6 mΩ R_DS(on) at 4.5 V ensures full enhancement under logic-level drive, eliminating need for external level shifters.
Point-of-Load Regulator in Thin Client	Battery Protection Circuit in 2S Li-ion Pack
Use Scenario: Deployed in fanless thin client requiring silent operation and minimal thermal derating. IC Role / Device Role / Timing Role: Primary switch in single-phase buck regulator delivering 3.3 V @ 15 A to SoC. Use Value: 1.9 °C/W R_thJC limits junction temperature rise to <40 °C above board, avoiding thermal throttling in sealed enclosure.	Use Scenario: Used in high-side protection FET for 2-cell (8.4 V max) lithium-ion battery pack. IC Role / Device Role / Timing Role: Load switch controlling main power path during overcurrent and short-circuit events. Use Value: 30 V V_DS rating provides 2× margin over 8.4 V pack voltage, ensuring long-term reliability under surge conditions.

Synchronous Rectifier in Notebook CPU VRM

DC/DC Converter in Ultrabook Power Supply

Use Scenario: Used as low-side switch in 2-phase 12 V → 1.2 V buck converter supplying Intel Core i7 processor.

IC Role / Device Role / Timing Role: N-channel synchronous rectifier replacing Schottky diode to reduce conduction loss and improve light-load efficiency.

Use Value: 6.6 mΩ R_DS(on) cuts conduction loss by 65 % vs. 20 mΩ alternative, enabling >94 % efficiency at 20 A load.

Use Scenario: Integrated into compact 12 mm × 12 mm PMIC module powering DDR4 memory subsystem.

IC Role / Device Role / Timing Role: High-current power switch operating at 500 kHz with 4.5 V gate drive from integrated controller.

Use Value: 7.6 mΩ R_DS(on) at 4.5 V ensures full enhancement under logic-level drive, eliminating need for external level shifters.

Point-of-Load Regulator in Thin Client

Battery Protection Circuit in 2S Li-ion Pack

Use Scenario: Deployed in fanless thin client requiring silent operation and minimal thermal derating.

IC Role / Device Role / Timing Role: Primary switch in single-phase buck regulator delivering 3.3 V @ 15 A to SoC.

Use Value: 1.9 °C/W R_thJC limits junction temperature rise to <40 °C above board, avoiding thermal throttling in sealed enclosure.

Use Scenario: Used in high-side protection FET for 2-cell (8.4 V max) lithium-ion battery pack.

IC Role / Device Role / Timing Role: Load switch controlling main power path during overcurrent and short-circuit events.

Use Value: 30 V V_DS rating provides 2× margin over 8.4 V pack voltage, ensuring long-term reliability under surge conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLML6344TRPBF	R_DS(on) = 12.5 mΩ @ 4.5 V; SO-8 package; R_thJC = 50 °C/W	Higher conduction loss and thermal resistance limit use to ≤10 A loads in non-compact layouts.	Select when cost sensitivity outweighs efficiency and size requirements; verify gate drive compatibility.
DMN3025LSD-13	R_DS(on) = 2.5 mΩ @ 10 V; dual-N PowerPAK SO-8; higher Q_g (34 nC)	Superior R_DS(on) but larger footprint and higher gate charge increase driver complexity and switching loss.	Prefer for ultra-high-current (>50 A) single-phase designs where thermal headroom exists and board area is less constrained.

Compared with IRLML6344TRPBF, SI7328DN-T1-E3 delivers 38 % lower R_DS(on) and 26× better thermal resistance - enabling higher current density in space-limited notebooks. Against DMN3025LSD-13, SI7328DN-T1-E3 trades 2.5 mΩ lower R_DS(on) for 40 % lower Q_g, favoring high-frequency, low-driver-power applications.

Availability

SI7328DN-T1-E3 is available at Aetrix Electronics and suitable for notebook CPU VRMs, ultrabook DC/DC converters, and thin-client point-of-load regulators requiring stable component supply, RoHS compliance, and verified thermal performance in high-density PCB layouts.

Supply support for SI7328DN-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The Si7328DN product line belongs to Vishay's TrenchFET® PowerPAK® family, engineered specifically for high-current, low-voltage synchronous rectification in portable computing and advanced power management systems.

FAQ

What is the maximum continuous drain current rating for SI7328DN-T1-E3 at 70 °C case temperature?

The SI7328DN-T1-E3 supports 35 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and assumes proper PCB thermal design with adequate copper area on the drain pad to maintain case temperature at or below 70 °C under steady-state operation. Derating applies above this temperature per the thermal resistance curves in the datasheet.

Does SI7328DN-T1-E3 require a gate resistor for stable operation in a 500 kHz synchronous buck converter?

Yes - while SI7328DN-T1-E3 has a tested gate resistance (R_g) of 0.5–1.8 Ω, an external gate resistor (typically 1–5 Ω) is recommended to control dV/dt, suppress ringing, and prevent shoot-through in high-frequency synchronous buck converters. The 21 nC total gate charge and 2.5 nC Q_gd make it sensitive to gate drive impedance; values outside this range may cause excessive switching loss or oscillation.

Can SI7328DN-T1-E3 be used in a 4.5 V gate drive application without performance compromise?

Yes - SI7328DN-T1-E3 is fully characterized at V_GS = 4.5 V, delivering R_DS(on) = 7.6 mΩ and 17.65 A continuous current. Its gate threshold voltage (0.6–1.5 V) ensures strong enhancement mode behavior, and the 100 % R_g test guarantees consistent turn-on timing. No performance compromise occurs versus 10 V drive in properly designed 4.5 V gate-drive systems.

What is the thermal resistance from junction to ambient (R_thJA) for SI7328DN-T1-E3 on a standard 1" × 1" FR4 board?

Per the datasheet, SI7328DN-T1-E3 exhibits R_thJA = 24 °C/W (typical) and 33 °C/W (maximum) for t ≤ 10 s on a 1" × 1" FR4 board. Under steady-state conditions, R_thJA rises to 65 °C/W (typical) and 81 °C/W (maximum). These values assume surface mounting per Vishay's recommended land pattern and are critical for calculating worst-case junction temperature in thermal design.

Is SI7328DN-T1-E3 pin-compatible with other PowerPAK 1212-8 MOSFETs such as SI7850DP?

No - SI7328DN-T1-E3 uses the single-N PowerPAK 1212-8 pinout (S-S-S-G-D-D-D-D), whereas SI7850DP is a dual-N device with different pin assignment (G1-S1-D1-D1-D2-S2-G2-D2). Although both share the same footprint and package outline, their terminal functions and internal configurations differ. Direct replacement requires schematic and layout revision to match gate/source/drain routing.

SI7328DN-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.6mOhm @ 18.9A, 10V

Vgs(th) (Max) @ Id:: 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 31.5 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 2610 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.78W (Ta), 52W (Tc)

Operating Temperature:: -50°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SI7328DN-T1-E3 FAQ

1.How can I place an order for SI7328DN-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7328DN-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7328DN-T1-E3 reliable?

The price and inventory of SI7328DN-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7328DN-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI7328DN-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7328DN-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7328DN-T1-E3?

SI7328DN-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7328DN-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7328DN-T1-E3?

For technical support, including SI7328DN-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7328DN-T1-E3 requirements.

6.How does Aetrix verify that SI7328DN-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI7328DN-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7328DN-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI7328DN-T1-E3?

All SI7328DN-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7328DN-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7328DN-T1-E3 part is unused and in its original packaging.

Return procedure for SI7328DN-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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