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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7328DN-T1-GE3

Name: SI7328DN-T1-GE3
Brand: Vishay Siliconix
SKU: SI7328DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7328DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SI7328DN-T1-GE3.pdf

Description:: MOSFET N-CH 30V 35A PPAK1212-8

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Product details

Overview

SI7328DN-T1-GE3 from Vishay Siliconix is a lead-free and halogen-free N-channel 30-V TrenchFET® Power MOSFET in PowerPAK® 1212-8 package, with R_DS(on) = 6.6 mΩ at V_GS = 10 V, 35 A continuous drain current (T_C = 25 °C), and 21 nC total gate charge - optimized for high-efficiency synchronous rectification in notebook DC/DC converters.

For engineers reviewing the SI7328DN-T1-GE3 datasheet, SI7328DN-T1-GE3 pinout, SI7328DN-T1-GE3 application, or SI7328DN-T1-GE3 equivalent, key selection criteria include its low thermal resistance (R_thJC = 1.9 °C/W), 1.07 mm profile for space-constrained layouts, and verified 100 % R_g testing for consistent switching performance.

Technical Context

This MOSFET employs TrenchFET® technology to achieve ultra-low on-resistance while maintaining robust gate oxide integrity. Its PowerPAK 1212-8 package features an exposed copper drain pad for direct thermal conduction to the PCB, enabling junction-to-case thermal resistance as low as 1.9 °C/W under steady-state conditions.

The device supports fast switching with t_d(on) = 10 ns, t_r = 10 ns, t_d(off) = 35 ns, and t_f = 8 ns at V_DD = 15 V, R_g = 1 Ω, and I_D ≈ 17.3 A - critical for minimizing conduction and switching losses in high-frequency synchronous buck converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - maximum drain-source blocking voltage suitable for 12 V and 19 V input rails in notebook power stages.
R_DS(on)	6.6 mΩ @ V_GS = 10 V - enables <1 W conduction loss at 35 A, reducing thermal load in compact DC/DC modules.
I_D (continuous)	35 A @ T_C = 25 °C - package-limited current rating supporting high-current synchronous rectifier operation without derating.
Q_g	21 nC (typ.) @ V_GS = 4.5 V - low gate charge minimizes driver power consumption and improves efficiency at 300–1000 kHz switching frequencies.
R_thJC	1.9 °C/W (typ.) - enables direct heat transfer from die to PCB copper, allowing >40 W dissipation with minimal ΔT_J.
V_GS(th)	0.6–1.5 V - low threshold ensures reliable turn-on with standard 3.3 V or 5 V gate drivers in logic-level applications.
C_iss	2610 pF - input capacitance impacts gate drive loop stability and EMI filtering requirements in high-dV/dt environments.

Pinout & Package

SI7328DN-T1-GE3 is housed in the leadless PowerPAK® 1212-8 package (3.30 mm × 3.30 mm, 1.07 mm height), featuring an exposed bottom-side drain pad for thermal management and surface-mount compatibility with standard reflow profiles (peak 240 °C).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt synchronous rectifier paths.
5, 6, 7, 8	Drain (D)	Four exposed drain pads connect directly to large PCB copper areas, providing primary thermal path and low-inductance power return.
4 (center)	Gate (G)	Single gate terminal located centrally for symmetrical routing - requires controlled-impedance gate trace to prevent oscillation during fast switching.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 6.6 mΩ R_DS(on) in 3.3 mm × 3.3 mm footprint - 40 % smaller than TSSOP-8 with comparable on-resistance.
PowerPAK 1212-8 package	1.07 mm profile and exposed drain pad achieve R_thJC = 1.9 °C/W - reduces junction temperature rise by >40 °C vs. SO-8 at same power dissipation.
100 % R_g tested	Guarantees gate resistance between 0.5–1.8 Ω - ensures consistent turn-on/turn-off timing across production lots for predictable EMI behavior.
Halogen-free & RoHS-compliant	Meets IPC-4101D/21 and JEDEC J-STD-020D - supports compliance in consumer notebook and industrial DC/DC designs.
Low Q_gd/Q_g ratio	Q_gd = 2.5 nC / Q_g = 21 nC = 12 % - suppresses Miller-induced shoot-through in synchronous buck topologies.

Applications

Synchronous Rectifier in Notebook CPU VRM	High-Density DC/DC Converter
Use Scenario: Used as low-side switch in 3-phase 12 V → 1.2 V CPU voltage regulator module operating at 500 kHz. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to minimize conduction loss and improve full-load efficiency by ≥3 %. Use Value: 6.6 mΩ R_DS(on) and 21 nC Q_g enable <0.8 W conduction loss at 30 A, reducing thermal stress on 4-layer FR4 PCB with 1 oz copper.	Use Scenario: Integrated into 19 V input, 5 V/10 A isolated flyback secondary-side synchronous rectifier for ultrabook adapter. IC Role / Device Role / Timing Role: N-channel MOSFET driven by self-driven gate signal referenced to source node for zero-voltage switching. Use Value: Low V_GS(th) (0.6–1.5 V) ensures reliable turn-on during low-duty-cycle operation, while 1.07 mm height fits under 1.2 mm height constraints.
Notebook Battery Protection Circuit	USB-C PD Power Path Switch
Use Scenario: Bidirectional current sensing and overcurrent cutoff in 3-cell Li-ion battery pack protection IC interface. IC Role / Device Role / Timing Role: Back-to-back configured N-MOSFET pair for reverse polarity and short-circuit protection with <10 µs response. Use Value: 30 V V_DS rating accommodates 12.6 V nominal + transient spikes; 35 A rating supports 15 A continuous discharge with margin.	Use Scenario: Input power path switch in USB-C PD 3.0 sink design handling up to 20 V/5 A (100 W) with thermal foldback. IC Role / Device Role / Timing Role: High-side N-channel switch controlled via dedicated gate driver IC with adaptive dead-time control. Use Value: R_thJC = 1.9 °C/W allows 2.5 W dissipation at <75 °C junction rise on 2-layer board - eliminates need for heatsink in slim-profile adapters.

Synchronous Rectifier in Notebook CPU VRM

High-Density DC/DC Converter

Use Scenario: Used as low-side switch in 3-phase 12 V → 1.2 V CPU voltage regulator module operating at 500 kHz.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to minimize conduction loss and improve full-load efficiency by ≥3 %.

Use Value: 6.6 mΩ R_DS(on) and 21 nC Q_g enable <0.8 W conduction loss at 30 A, reducing thermal stress on 4-layer FR4 PCB with 1 oz copper.

Use Scenario: Integrated into 19 V input, 5 V/10 A isolated flyback secondary-side synchronous rectifier for ultrabook adapter.

IC Role / Device Role / Timing Role: N-channel MOSFET driven by self-driven gate signal referenced to source node for zero-voltage switching.

Use Value: Low V_GS(th) (0.6–1.5 V) ensures reliable turn-on during low-duty-cycle operation, while 1.07 mm height fits under 1.2 mm height constraints.

Notebook Battery Protection Circuit

USB-C PD Power Path Switch

Use Scenario: Bidirectional current sensing and overcurrent cutoff in 3-cell Li-ion battery pack protection IC interface.

IC Role / Device Role / Timing Role: Back-to-back configured N-MOSFET pair for reverse polarity and short-circuit protection with <10 µs response.

Use Value: 30 V V_DS rating accommodates 12.6 V nominal + transient spikes; 35 A rating supports 15 A continuous discharge with margin.

Use Scenario: Input power path switch in USB-C PD 3.0 sink design handling up to 20 V/5 A (100 W) with thermal foldback.

IC Role / Device Role / Timing Role: High-side N-channel switch controlled via dedicated gate driver IC with adaptive dead-time control.

Use Value: R_thJC = 1.9 °C/W allows 2.5 W dissipation at <75 °C junction rise on 2-layer board - eliminates need for heatsink in slim-profile adapters.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7850DP-T1-GE3	30 V, 4.5 mΩ @ 10 V, PowerPAK 1212-8, but rated for 50 A (T_C = 25 °C) and higher Q_g (34 nC)	Better conduction loss at >40 A, but higher switching loss limits use above 300 kHz	Select when peak current exceeds 35 A and thermal headroom permits higher gate drive power.
IRF7759L2TRPBF	30 V, 5.2 mΩ @ 10 V, SO-8 package, R_thJC = 2.5 °C/W, 1.75 mm height	Larger footprint and higher thermal resistance require larger copper area or forced air cooling	Choose only if legacy SO-8 layout reuse is mandatory and efficiency targets allow ~0.3 W higher loss at 30 A.

Compared with Si7850DP-T1-GE3 and IRF7759L2TRPBF, SI7328DN-T1-GE3 offers optimal balance of low R_DS(on), moderate Q_g, and ultra-thin profile - making it preferred for thermally constrained, high-frequency notebook and adapter designs where board height and efficiency are co-optimized.

Availability

SI7328DN-T1-GE3 is available at Aetrix Electronics and suitable for notebook CPU VRMs, high-density DC/DC converters, and USB-C PD power path switching requiring stable component supply, halogen-free compliance, and consistent thermal performance across volume production.

Supply support for SI7328DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The Si7328DN belongs to Vishay's TrenchFET® PowerPAK® family, engineered specifically for space- and thermally constrained DC/DC conversion in portable computing and power adapter applications.

FAQ

What is the maximum continuous drain current rating for SI7328DN-T1-GE3 at 70 °C case temperature?

The SI7328DN-T1-GE3 supports 35 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and identical to its 25 °C rating due to the PowerPAK 1212-8's low thermal resistance, enabling stable high-current operation without derating over a wide ambient range. SI7328DN-T1-GE3 maintains this current capability up to T_C = 70 °C before thermal limiting applies.

Does SI7328DN-T1-GE3 require a gate resistor for stable operation in synchronous rectifier circuits?

Yes - while SI7328DN-T1-GE3 has a typical gate resistance of 0.5–1.8 Ω, external gate resistors (typically 1–5 Ω) are recommended to dampen ringing, control dV/dt, and prevent false turn-on during high-di/dt commutation. The datasheet confirms stable switching with R_g = 1 Ω in timing measurements, and SI7328DN-T1-GE3's low Q_gd/Q_g ratio further enhances noise immunity when properly terminated.

Can SI7328DN-T1-GE3 be used in a back-to-back configuration for battery protection?

Yes - SI7328DN-T1-GE3 is suitable for bidirectional back-to-back N-MOSFET configurations in Li-ion battery protection circuits. Its 30 V V_DS rating safely handles 3S battery packs (12.6 V nominal + transients), and its 35 A continuous rating provides margin for 15 A discharge currents. SI7328DN-T1-GE3's low R_DS(on) minimizes forward and reverse conduction loss in both directions when paired with a matched device.

What is the recommended solder reflow profile for SI7328DN-T1-GE3?

SI7328DN-T1-GE3 follows the lead-free reflow profile per Vishay document 73257: ramp-up ≤6 °C/s, preheat 155 ±15 °C for ≤120 s, time above 180 °C = 70–180 s, peak temperature = 240 +5/−0 °C for 20–40 s, and ramp-down ≤6 °C/s. The PowerPAK 1212-8's exposed copper drain pad requires no special fillet formation - SI7328DN-T1-GE3 achieves reliable interconnection via bottom-side solder wetting alone.

How does the thermal performance of SI7328DN-T1-GE3 compare to standard SO-8 MOSFETs?

SI7328DN-T1-GE3 delivers R_thJC = 1.9 °C/W (typ.), which is over 10× better than standard SO-8 packages (~20 °C/W). On a 4-layer FR4 board, SI7328DN-T1-GE3 shows only a 4.8 °C junction rise at 2 W dissipation versus >40 °C for SO-8 - preserving R_DS(on) stability and enabling higher current density. SI7328DN-T1-GE3 achieves this in 40 % less footprint than TSSOP-8 while maintaining identical thermal performance to PowerPAK SO-8.

SI7328DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.6mOhm @ 18.9A, 10V

Vgs(th) (Max) @ Id:: 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 31.5 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 2610 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.78W (Ta), 52W (Tc)

Operating Temperature:: -50°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SI7328DN-T1-GE3 FAQ

1.How can I place an order for SI7328DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7328DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7328DN-T1-GE3 reliable?

The price and inventory of SI7328DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7328DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI7328DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7328DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7328DN-T1-GE3?

SI7328DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7328DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7328DN-T1-GE3?

For technical support, including SI7328DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7328DN-T1-GE3 requirements.

6.How does Aetrix verify that SI7328DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI7328DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7328DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI7328DN-T1-GE3?

All SI7328DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7328DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7328DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SI7328DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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