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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7344DP-T1-E3

Name: SI7344DP-T1-E3
Brand: Vishay Siliconix
SKU: SI7344DP-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7344DP-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7344DP-T1-E3.pdf

Description:: MOSFET N-CH 20V 11A PPAK SO-8

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Product details

Overview

SI7344DP-T1-E3 from Vishay Siliconix is an N-channel 20-V TrenchFET® Power MOSFET in PowerPAK® SO-8 package, with r_DS(on) = 0.008 Ω @ V_GS = 10 V, 17-A continuous drain current, and PWM-optimized switching for high-side DC/DC conversion in server power supplies.

For engineers reviewing the SI7344DP-T1-E3 datasheet, SI7344DP-T1-E3 pinout, SI7344DP-T1-E3 application, or SI7344DP-T1-E3 equivalent, key selection criteria include thermal resistance (R_thJA = 55 °C/W steady-state), gate charge (Q_g = 15 nC), diode forward voltage (V_SD = 1.1 V), and RoHS-compliant lead-free termination.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching. Its PowerPAK SO-8 package features exposed-drain copper pads for enhanced thermal conduction and supports high-current synchronous rectification with integrated body diode recovery time (t_rr = 70 ns).

The device operates with gate threshold voltage (V_GS(th)) between 0.8 V and 2.1 V, enabling robust 4.5-V logic-level drive capability. It delivers 33-S transconductance at 17 A and maintains stable r_DS(on) across junction temperatures from –55 °C to 150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum drain-source blocking voltage for 12-V input rail DC/DC stages
r_DS(on) @ 10 V	0.008 Ω - Enables <1.4 W conduction loss at 17 A, critical for high-efficiency server VRMs
ID (continuous)	17 A @ T_A = 25 °C - Supports high-current high-side switch in compact 6.15 × 5.15 mm footprint
Q_g	15 nC - Low gate charge reduces driver power and enables efficient 500-kHz+ PWM operation
R_thJC	4.5 °C/W (typ) - Enables direct thermal coupling to PCB copper for passive cooling in dense layouts
V_GS(th)	0.8–2.1 V - Ensures reliable turn-on with standard 3.3-V or 5-V gate drivers
t_rr	35–70 ns - Minimizes reverse-recovery losses during synchronous rectification transitions

Pinout & Package

SI7344DP-T1-E3 uses the PowerPAK® SO-8 surface-mount package (6.15 mm × 5.15 mm, 1.07-mm profile), with exposed drain terminals on the bottom for thermal management. The top-side marking includes "Si7344DP" and date code.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Common source connection for internal parallel FET die; tied to PCB ground plane for low-inductance return path
5	Gate (G)	Control terminal requiring <15 nC charge; sensitive to ESD (±20 V max V_GS)
6, 7, 8	Drain (D)	Exposed-copper drain pads on bottom side; primary heat transfer path to PCB thermal pad

Key Features

Feature	Design Value
TrenchFET® silicon process	Delivers 0.008 Ω r_DS(on) in SO-8 footprint-enabling higher current density than planar MOSFETs
PowerPAK® SO-8 package	Reduces R_thJA by ~35% vs. standard SO-8 via bottom-side thermal pad and optimized copper layout
PWM-optimized switching	Q_gd/Q_gs ratio of ~0.94 ensures clean Miller plateau transition and reduced shoot-through risk
RoHS-compliant lead-free finish	E3 suffix denotes matte tin over nickel termination, qualified for 260 °C peak reflow per JEDEC J-STD-020

Applications

Server VRM High-Side Switch	Desktop CPU Voltage Regulator
Use Scenario: Primary high-side switch in multiphase buck converters delivering 1–2 V @ >100 A to modern Xeon/EPYC processors. IC Role / Device Role / Timing Role: Synchronously switched N-channel MOSFET controlling power delivery timing with sub-100-ns dead-time control. Use Value: 0.008 Ω r_DS(on) limits conduction loss to <2.3 W at 17 A, directly improving VRM efficiency and reducing heatsink requirements.	Use Scenario: High-side switch in single-phase or dual-phase core VRMs for Intel Core i7/i9 and AMD Ryzen desktop CPUs. IC Role / Device Role / Timing Role: Fast-turning N-channel power switch driven by dedicated gate controller (e.g., IR35201) for precise PWM duty-cycle execution. Use Value: 15-nC Q_g allows full turn-on within 30 ns using 0.5-Ω driver, supporting >1-MHz switching without excessive gate-drive loss.
Synchronous Rectifier	Industrial DC/DC Module
Use Scenario: Secondary-side synchronous rectifier in isolated 48-V-to-12-V telecom DC/DC bricks operating at 300–500 kHz. IC Role / Device Role / Timing Role: Low-V_DS clamp switch replacing Schottky diode; body diode conducts during dead time before gate turn-on. Use Value: 0.75–1.1 V V_SD and 70 ns t_rr reduce reverse-recovery energy loss by >60% vs. 40-V Schottky alternatives.	Use Scenario: Input-side high-side switch in ruggedized 24-V-to-5-V industrial DC/DC modules used in PLC I/O and motor drives. IC Role / Device Role / Timing Role: Protected power switch handling load dumps and ISO 7637-2 pulses up to ±50 V. Use Value: 20-V V_DS rating with 50-A pulsed capability (I_DM) provides margin against transient overvoltage events in harsh environments.

Server VRM High-Side Switch

Desktop CPU Voltage Regulator

Use Scenario: Primary high-side switch in multiphase buck converters delivering 1–2 V @ >100 A to modern Xeon/EPYC processors.

IC Role / Device Role / Timing Role: Synchronously switched N-channel MOSFET controlling power delivery timing with sub-100-ns dead-time control.

Use Value: 0.008 Ω r_DS(on) limits conduction loss to <2.3 W at 17 A, directly improving VRM efficiency and reducing heatsink requirements.

Use Scenario: High-side switch in single-phase or dual-phase core VRMs for Intel Core i7/i9 and AMD Ryzen desktop CPUs.

IC Role / Device Role / Timing Role: Fast-turning N-channel power switch driven by dedicated gate controller (e.g., IR35201) for precise PWM duty-cycle execution.

Use Value: 15-nC Q_g allows full turn-on within 30 ns using 0.5-Ω driver, supporting >1-MHz switching without excessive gate-drive loss.

Synchronous Rectifier

Industrial DC/DC Module

Use Scenario: Secondary-side synchronous rectifier in isolated 48-V-to-12-V telecom DC/DC bricks operating at 300–500 kHz.

IC Role / Device Role / Timing Role: Low-V_DS clamp switch replacing Schottky diode; body diode conducts during dead time before gate turn-on.

Use Value: 0.75–1.1 V V_SD and 70 ns t_rr reduce reverse-recovery energy loss by >60% vs. 40-V Schottky alternatives.

Use Scenario: Input-side high-side switch in ruggedized 24-V-to-5-V industrial DC/DC modules used in PLC I/O and motor drives.

IC Role / Device Role / Timing Role: Protected power switch handling load dumps and ISO 7637-2 pulses up to ±50 V.

Use Value: 20-V V_DS rating with 50-A pulsed capability (I_DM) provides margin against transient overvoltage events in harsh environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	r_DS(on) = 0.0065 Ω @ 10 V but larger SO-8 footprint (7.6 × 5.2 mm); R_thJA = 62 °C/W	Better conduction loss but higher thermal resistance; less suitable for ultra-dense server VRMs	Prefer when lower r_DS(on) outweighs board space and thermal constraints
NTMFS4C06NT1G	25-V rating, r_DS(on) = 0.0055 Ω @ 10 V, Power56 package (5.8 × 6.1 mm), R_thJA = 45 °C/W	Higher voltage margin and better thermal performance, but requires different PCB land pattern	Select when 25-V headroom or improved thermal dissipation is required and layout revision is acceptable

Compared with IRF7470PBF and NTMFS4C06NT1G, SI7344DP-T1-E3 offers optimal balance of low-profile packaging (1.07 mm), proven 20-V reliability in server VRMs, and industry-standard PowerPAK SO-8 compatibility-making it preferred for space-constrained, high-volume computing power designs where thermal and gate-drive efficiency are co-prioritized.

Availability

SI7344DP-T1-E3 is available at Aetrix Electronics and suitable for server VRMs, desktop CPU voltage regulators, and industrial DC/DC modules requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for SI7344DP-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The Si7344DP belongs to Vishay's TrenchFET® Gen III Power MOSFET family, engineered specifically for high-frequency, high-current DC/DC conversion in computing and communications infrastructure.

FAQ

What is the maximum continuous drain current for SI7344DP-T1-E3 at 70°C ambient temperature?

The SI7344DP-T1-E3 supports 14 A continuous drain current at T_A = 70°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits imposed by the PowerPAK SO-8 package's R_thJA of 55 °C/W under steady-state conditions. Designers must verify PCB copper area and airflow to sustain this current reliably in end equipment.

Does SI7344DP-T1-E3 support 4.5-V gate drive in practical applications?

Yes, SI7344DP-T1-E3 is fully characterized for 4.5-V gate drive, delivering r_DS(on) = 0.012 Ω at I_D = 14 A. Its V_GS(th) range (0.8–2.1 V) ensures strong enhancement-mode behavior at 4.5 V, making it compatible with standard 5-V and 3.3-V logic-level controllers without level-shifting circuitry.

What is the significance of the "E3" suffix in SI7344DP-T1-E3?

"E3" indicates a lead-free, matte tin-plated termination compliant with RoHS Directive 2011/65/EU. It specifies a JEDEC-standard reflow profile (peak 260 °C), verified for compatibility with Pb-free soldering processes. The "E3" marking appears on the top-side device label alongside the part number and date code.

Can SI7344DP-T1-E3 be used in synchronous rectification mode?

Yes, SI7344DP-T1-E3 is explicitly rated for synchronous rectification applications. Its body diode exhibits V_SD = 0.75–1.1 V at I_S = 3.7 A and reverse recovery time t_rr = 35–70 ns, enabling efficient replacement of Schottky diodes in secondary-side DC/DC stages up to 500 kHz.

How does the PowerPAK SO-8 package of SI7344DP-T1-E3 improve thermal performance versus standard SO-8?

The PowerPAK SO-8 package of SI7344DP-T1-E3 reduces R_thJA by ~30% versus conventional SO-8 through an exposed-drain thermal pad on the bottom side. With typical R_thJA = 55 °C/W (vs. ~80 °C/W for standard SO-8), it transfers heat more efficiently to the PCB, allowing higher power density without forced air cooling in server and telecom applications.

SI7344DP-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.8W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7344DP-T1-E3 FAQ

1.How can I place an order for SI7344DP-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7344DP-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7344DP-T1-E3 reliable?

The price and inventory of SI7344DP-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7344DP-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI7344DP-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7344DP-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7344DP-T1-E3?

SI7344DP-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7344DP-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7344DP-T1-E3?

For technical support, including SI7344DP-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7344DP-T1-E3 requirements.

6.How does Aetrix verify that SI7344DP-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI7344DP-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7344DP-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI7344DP-T1-E3?

All SI7344DP-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7344DP-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7344DP-T1-E3 part is unused and in its original packaging.

Return procedure for SI7344DP-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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