My Inquiry
My Account
Vishay Siliconix SI7356ADP-T1-GE3
- Part No.:
- SI7356ADP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SI7356ADP-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 40A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:5,911
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SI7356ADP-T1-GE3 from Vishay Siliconix is an N-channel 30-V (D-S) MOSFET in PowerPAK® SO-8 package, delivering 40 A continuous drain current at TC = 25 °C, RDS(on) of 0.003 Ω at VGS = 10 V, and 46 nC total gate charge. It serves as a low-side switch in high-efficiency DC/DC converters for notebook and server power stages.
For engineers reviewing the SI7356ADP-T1-GE3 datasheet, SI7356ADP-T1-GE3 pinout, SI7356ADP-T1-GE3 application, or SI7356ADP-T1-GE3 equivalent, key selection criteria include thermal resistance (RthJC = 1.0 °C/W), halogen-free compliance, and validated 100% Rg testing for gate drive predictability in synchronous buck topologies.
Technical Context
This MOSFET uses Vishay's TrenchFET Gen II process to achieve ultra-low on-resistance with high-density cell layout. Its PowerPAK SO-8 package features exposed-drain copper pads for enhanced thermal conduction and a 1.07 mm profile optimized for space-constrained point-of-load designs.
The device supports gate drive voltages from 4.5 V to 10 V, with VGS(th) specified between 1.0 V and 3.0 V, enabling compatibility with standard logic-level and PWM controllers. Body diode recovery (trr = 40–70 ns, Qrr = 40–70 nC) is characterized for hard-switched operation in non-synchronous configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage for low-voltage DC/DC input stages |
| RDS(on) @ 10 V | 0.003 Ω - Enables <1.2 W conduction loss at 20 A, critical for thermal management |
| ID (continuous) | 40 A @ TC = 25 °C - Supports high-current output rails without parallel devices |
| Qg (total) | 46 nC @ 4.5 V - Determines gate driver power and switching loss in 300–1000 kHz applications |
| RthJC | 1.0 °C/W (typ.) - Enables direct heatsinking via PCB copper or external thermal pad |
| VGS(th) | 1.0–3.0 V - Ensures reliable turn-on with 3.3 V or 5 V gate drivers |
| trr | 40–70 ns - Limits reverse recovery energy in non-synchronous flyback or buck converters |
Pinout & Package
SI7356ADP-T1-GE3 is housed in a leadless PowerPAK® SO-8 package (6.15 mm × 5.15 mm, 1.07 mm height) with exposed drain terminals on the bottom for thermal and electrical performance. The top-side marking includes "S7356A" and date code.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source | Common source connection; internally paralleled for low-inductance return path |
| 5, 6, 7, 8 | Drain | Exposed copper drain pad (bottom side); primary thermal and power path to PCB |
| G (Pin 3) | Gate | Single gate terminal; requires controlled slew rate to minimize EMI in fast-switching apps |
Key Features
| Feature | Design Value |
|---|---|
| Halogen-free construction | Meets IEC 61249-2-21 and JEDEC JS709B requirements for environmentally compliant manufacturing |
| TrenchFET Gen II process | Delivers 25% lower RDS(on) vs. prior generation at same die size, improving power density |
| 100% Rg tested | Ensures gate resistance between 0.5–1.5 Ω, enabling accurate gate loss calculation and driver sizing |
| Low-profile PowerPAK SO-8 | 1.07 mm height allows integration into ultra-thin laptop VRMs and stacked PCB assemblies |
| Enhanced thermal resistance | RthJC = 1.0 °C/W enables >80 W dissipation with minimal case-to-heatsink delta-T |
Applications
| Notebook CPU/GPU VRM | Server Point-of-Load Converter |
|---|---|
Use Scenario: High-current, multi-phase buck converter supplying core voltage to Intel/AMD processors in thin-and-light notebooks. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 500–1000 kHz with 30 ns dead-time control. Use Value: 0.003 Ω RDS(on) reduces conduction loss by ~35% vs. legacy 4.5 mΩ parts, extending battery runtime under load. | Use Scenario: 12 V input to 0.8–1.8 V output conversion for ASIC/FPGA power domains in rack-mounted servers. IC Role / Device Role / Timing Role: Primary low-side FET in interleaved 3+ phase topology with digital PWM controller feedback. Use Value: 46 nC Qg at 4.5 V enables efficient drive with integrated DrMOS controllers, minimizing gate drive loss at 600 kHz. |
| Workstation GPU Power Stage | Industrial DC/DC Module |
Use Scenario: Dual-rail power delivery (VDDQ/VDD) for high-end workstation GPUs requiring transient response <1 µs. IC Role / Device Role / Timing Role: Low-side switch paired with Si7357ADP high-side FET in synchronous buck stage. Use Value: 40 A continuous rating and 70 A pulsed capability support peak GPU loads up to 450 W per rail. | Use Scenario: Isolated or non-isolated 24/48 V to 5/12 V conversion in DIN-rail mounted industrial PLCs and I/O modules. IC Role / Device Role / Timing Role: Main low-side switch in fixed-frequency (300 kHz) buck regulator with external current sensing. Use Value: -55 to 150 °C operating range and halogen-free construction ensure reliability in extended-temperature industrial environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLHS6342TRPBF | RDS(on) = 0.0027 Ω @ 10 V; Qg = 39 nC; PowerPAIR® 3.3 × 3.3 mm package | Smaller footprint but higher RthJA (45 °C/W); limited to ≤25 A continuous in same board area | Preferred when board space is constrained and thermal budget allows higher junction temperature rise |
| SIS840DT-T1-GE3 | RDS(on) = 0.0035 Ω @ 10 V; Qg = 52 nC; same PowerPAK SO-8 footprint and halogen-free spec | Higher gate charge increases switching loss by ~13% at 600 kHz; identical thermal and mounting interface | Drop-in replacement where slightly higher RDS(on) is acceptable and supply chain diversification is required |
Compared with IRLHS6342TRPBF and SIS840DT-T1-GE3, SI7356ADP-T1-GE3 offers the best balance of low RDS(on), moderate Qg, and proven thermal performance in PowerPAK SO-8-making it optimal for high-current, thermally demanding VRM designs where package compatibility and reliability are prioritized over minimal footprint.
Availability
SI7356ADP-T1-GE3 is available at Aetrix Electronics and suitable for notebook CPU VRMs, server point-of-load converters, and industrial DC/DC modules requiring stable component supply, halogen-free compliance, and verified thermal performance in PowerPAK SO-8 format.
Supply support for SI7356ADP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The Si7356ADP product line targets high-current, low-voltage power conversion applications, leveraging TrenchFET Gen II and PowerPAK packaging to deliver industry-leading RDS(on) × Qg figures for synchronous rectification.
FAQ
What is the maximum continuous drain current rating for SI7356ADP-T1-GE3 at 70 °C case temperature?
The SI7356ADP-T1-GE3 supports 32 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK SO-8 package and must be validated against actual PCB copper area and airflow conditions in the final design. SI7356ADP-T1-GE3 maintains RDS(on) stability across this range due to its trench-based silicon structure.
Does SI7356ADP-T1-GE3 require special rework considerations due to its leadless package?
Yes-SI7356ADP-T1-GE3 uses a leadless PowerPAK SO-8 package where the drain terminals are exposed copper on the bottom side. Manual soldering with a soldering iron is not recommended. Rework must follow Vishay's documented thermal profile (peak 260 °C, 10 s max) and use hot-air or infrared reflow equipment to ensure uniform heating and avoid delamination. SI7356ADP-T1-GE3's solder fillet at the copper tip is not guaranteed nor required for functional interconnection.
How does the body diode performance of SI7356ADP-T1-GE3 impact non-synchronous converter designs?
The SI7356ADP-T1-GE3 body diode exhibits VSD = 0.73–1.1 V at IS = 5 A and trr = 40–70 ns at TJ = 25 °C, enabling usable freewheeling in non-synchronous buck or flyback topologies. However, its Qrr of 40–70 nC contributes directly to switching loss during turn-on; designers should evaluate trade-offs versus adding an external Schottky diode. SI7356ADP-T1-GE3's body diode parameters are fully characterized and production-tested.
Is SI7356ADP-T1-GE3 pin-compatible with earlier Si7356ADP variants like the -T1-E3 version?
Yes-SI7356ADP-T1-GE3 shares identical PowerPAK SO-8 pinout, footprint, and electrical specifications with Si7356ADP-T1-E3. The only difference is halogen-free material content; all thermal, electrical, and mechanical characteristics remain unchanged. SI7356ADP-T1-GE3 can replace Si7356ADP-T1-E3 without PCB or firmware modifications in existing designs requiring RoHS-compliant and halogen-free components.
What is the typical gate resistance (Rg) value for SI7356ADP-T1-GE3, and why is 100% testing important?
The SI7356ADP-T1-GE3 has a typical gate resistance (Rg) of 0.5–1.0 Ω, with a maximum of 1.5 Ω, and every unit undergoes 100% Rg testing. This ensures predictable gate drive loss, accurate Miller plateau timing, and consistent switching behavior across production lots-critical for high-frequency synchronous buck controllers where gate loss and dV/dt-induced shoot-through must be tightly controlled. SI7356ADP-T1-GE3's Rg specification directly supports robust gate driver IC selection.
SI7356ADP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 145 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6215 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5.4W (Ta), 83W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SI7356ADP-T1-GE3 FAQ
1.How can I place an order for SI7356ADP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7356ADP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7356ADP-T1-GE3 reliable?
The price and inventory of SI7356ADP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7356ADP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7356ADP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7356ADP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7356ADP-T1-GE3?
SI7356ADP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7356ADP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7356ADP-T1-GE3?
For technical support, including SI7356ADP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7356ADP-T1-GE3 requirements.
6.How does Aetrix verify that SI7356ADP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7356ADP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7356ADP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7356ADP-T1-GE3?
All SI7356ADP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7356ADP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7356ADP-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7356ADP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SI7356ADP-T1-GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
