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Vishay Siliconix SI7370ADP-T1-GE3
- Part No.:
- SI7370ADP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SI7370ADP-T1-GE3.pdf
- Description:
- MOSFET N-CH 60V 50A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:5,881
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Product details
Overview
SI7370ADP-T1-GE3 from Vishay Siliconix is an N-channel 60 V TrenchFET® Power MOSFET in PowerPAK SO-8 package, delivering 16 A continuous drain current at 25 °C, 0.010 Ω RDS(on) at VGS = 10 V, and 45 nC total gate charge - optimized for primary-side switching in 24 V DC/DC converters and secondary-side synchronous rectification.
For engineers reviewing the SI7370ADP-T1-GE3 datasheet, SI7370ADP-T1-GE3 pinout, SI7370ADP-T1-GE3 application, or SI7370ADP-T1-GE3 equivalent, key selection criteria include its 60 V VDS, low RDS(on) at 6 V and 10 V gate drive, 100 % UIS-tested ruggedness, and lead-free/halogen-free PowerPAK SO-8 footprint compatibility with high-density power layouts.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching with controlled Qg (45 nC typ.) and Qgd (10 nC). Its body diode exhibits 35–60 ns reverse recovery time and 45–70 nC Qrr, supporting efficient synchronous rectification.
The device operates across –55 °C to +150 °C junction temperature, features ±20 V gate-source rating, and is characterized for stable RDS(on) over temperature - 0.0125 Ω max at VGS = 6 V and ID = 10 A - enabling robust gate drive margin in industrial and telecom power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - supports 24 V input DC/DC topologies with ≥2× voltage margin against transients. |
| RDS(on) | 0.010 Ω @ VGS = 10 V, ID = 12 A - enables <1.4 W conduction loss at 12 A, critical for thermal management. |
| ID (continuous) | 16 A @ TA = 25 °C - rated for surface-mount operation on 1" × 1" FR4, not package-limited at ambient. |
| Qg | 45 nC typ. @ VDS = 30 V, VGS = 10 V - determines gate driver power requirement and switching speed trade-off. |
| trr / Qrr | 35–60 ns / 45–70 nC - defines body diode recovery behavior during hard-commutation in synchronous buck stages. |
| RthJA | 19–24 °C/W - sets maximum power dissipation limit (5.2 W) in standard PCB layout without heatsink. |
Pinout & Package
SI7370ADP-T1-GE3 uses the PowerPAK SO-8 package: leadless, bottom-terminal, 6.15 mm × 5.15 mm footprint with exposed drain pads. Thermal performance relies on soldered copper area under D pins.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Control terminal; requires ≤±20 V drive; 0.2–1.5 Ω gate resistance affects turn-on/off timing. |
| S | Source | Reference node for gate drive and current sensing; tied to power ground in low-side switch configurations. |
| D (pins 1,2,3,4,7,8) | Drain | High-side switching node; all six terminals are internally connected to the same drain metallization for low-inductance current path. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® construction | Enables 0.010 Ω RDS(on) at 10 V drive while maintaining 60 V breakdown - balances conduction loss and voltage safety margin. |
| 100 % UIS tested | Guarantees ruggedness against unclamped inductive switching events up to 125 mJ, critical for flyback and LLC primary switches. |
| Halogen-free & RoHS-compliant | Meets JEDEC JS709A and EU Directive 2011/65/EU - supports environmentally regulated industrial and telecom deployments. |
| PowerPAK SO-8 package | Provides 1.5 °C/W typical RthJC - enables direct thermal coupling to PCB copper, simplifying thermal design vs. SO-8 with leads. |
Applications
| Primary-Side DC/DC Switch | Synchronous Rectifier |
|---|---|
|
Use Scenario: High-efficiency isolated 24 V input DC/DC converter operating at 200–500 kHz in telecom power supplies. IC Role / Device Role / Timing Role: Primary-side power switch controlling energy transfer into transformer; handles full input voltage and peak current. Use Value: Low 0.010 Ω RDS(on) minimizes conduction loss at 12–16 A load; 60 V rating accommodates reflected output voltage plus margin. |
Use Scenario: Secondary-side synchronous rectification in 12 V or 5 V isolated outputs of forward or LLC converters. IC Role / Device Role / Timing Role: Low-VDS replacement for Schottky diode; driven complementary to primary switch with precise timing control. Use Value: Body diode trr ≤ 60 ns and low Qrr reduce switching loss and EMI during reverse recovery; 0.0125 Ω RDS(on) at 6 V enables logic-level drive. |
| Industrial Motor Drive Half-Bridge | Server VRM High-Side Switch |
|
Use Scenario: 24–48 V BLDC motor gate driver stage requiring robust short-circuit withstand and thermal stability. IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration; conducts motor phase current and handles PWM commutation. Use Value: 100 % UIS testing ensures survival during motor stall or shoot-through faults; 150 °C max TJ supports extended industrial ambient. |
Use Scenario: High-current point-of-load regulator in datacenter servers, delivering >100 A at sub-1 V to CPUs/GPUs. IC Role / Device Role / Timing Role: High-side switch in multiphase buck converter; switched at 300–1000 kHz with tight dead-time control. Use Value: 45 nC Qg enables fast turn-on with moderate gate driver strength; low RDS(on) reduces I²R loss in high-current, low-voltage rails. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(on) = 0.011 Ω @ 10 V, Qg = 52 nC, TO-252 package - higher gate charge and larger footprint. | Larger thermal resistance (RthJA ≈ 62 °C/W) limits power density; less suitable for compact DC/DC modules. | Prefer SI7370ADP-T1-GE3 when board space, thermal performance, or gate drive efficiency are constrained. |
| DMN6070LSD-13 | RDS(on) = 0.012 Ω @ 10 V, Qg = 36 nC, PowerDI 3333 package - lower Qg but higher RDS(on) and no UIS rating. | Not 100 % UIS tested; unsuitable for inductive switching stress in primary-side flyback or LLC. | Choose SI7370ADP-T1-GE3 where unclamped inductive switching reliability is mandatory. |
Compared with IRF7470PBF and DMN6070LSD-13, SI7370ADP-T1-GE3 offers the best balance of low RDS(on), moderate Qg, verified UIS ruggedness, and compact PowerPAK SO-8 thermal performance - making it optimal for high-reliability, space-constrained 24 V DC/DC and synchronous rectifier designs.
Availability
SI7370ADP-T1-GE3 is available at Aetrix Electronics and suitable for 24 V DC/DC converters, synchronous rectifiers, and industrial motor drive half-bridges requiring stable component supply, consistent parametric performance, and long-term lifecycle support.
Supply support for SI7370ADP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The Si7370ADP series belongs to Vishay's TrenchFET® Power MOSFET product line, engineered specifically for high-frequency, high-efficiency DC/DC conversion and synchronous rectification in industrial, telecom, and computing power systems.
FAQ
What is the maximum continuous drain current for SI7370ADP-T1-GE3 at 70 °C ambient temperature?
The SI7370ADP-T1-GE3 supports 12.9 A continuous drain current at TA = 70 °C when mounted on a 1" × 1" FR4 board. This derating reflects thermal limitations of the PowerPAK SO-8 package under natural convection; forced airflow or enhanced copper pour increases usable current.
Does SI7370ADP-T1-GE3 require gate resistors for reliable switching in a 500 kHz DC/DC converter?
Yes - SI7370ADP-T1-GE3 benefits from a gate resistor (typically 2–10 Ω) to damp ringing and control dV/dt, especially given its 45 nC Qg and low 0.2–1.5 Ω intrinsic Rg. Without external resistance, fast edge rates may cause EMI or shoot-through in half-bridge configurations using SI7370ADP-T1-GE3.
Is SI7370ADP-T1-GE3 suitable for use as a high-side switch with bootstrap gate drive?
Yes - SI7370ADP-T1-GE3 is compatible with bootstrap gate drive in high-side configurations. Its ±20 V VGS rating and 4.5 V minimum VGS(th) ensure robust turn-on with typical 10–12 V bootstrap voltages; however, body diode conduction must be minimized to avoid bootstrap capacitor discharge in continuous conduction mode.
What is the thermal resistance from junction to case (RthJC) for SI7370ADP-T1-GE3, and how does it impact heatsinking?
The SI7370ADP-T1-GE3 has a typical RthJC of 1.5 °C/W and maximum of 1.8 °C/W. This low value confirms efficient heat transfer from die to exposed drain pad - meaning effective heatsinking requires direct thermal connection of the PCB copper area under pins 1,2,3,4,7,8 to internal or external copper planes.
How does the 100 % UIS testing of SI7370ADP-T1-GE3 improve system reliability in flyback converters?
The 100 % UIS testing certifies that every SI7370ADP-T1-GE3 unit withstands unclamped inductive switching energy up to 125 mJ. In flyback converters, this prevents failure during output short-circuit or startup overload, where leakage inductance causes voltage spikes exceeding VDS rating - a key reliability advantage over non-UIS-rated MOSFETs like SI7370ADP-T1-GE3.
SI7370ADP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 10mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 70 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2850 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5.2W (Ta), 69.4W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SI7370ADP-T1-GE3 FAQ
1.How can I place an order for SI7370ADP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7370ADP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7370ADP-T1-GE3 reliable?
The price and inventory of SI7370ADP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7370ADP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7370ADP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7370ADP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7370ADP-T1-GE3?
SI7370ADP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7370ADP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7370ADP-T1-GE3?
For technical support, including SI7370ADP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7370ADP-T1-GE3 requirements.
6.How does Aetrix verify that SI7370ADP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7370ADP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7370ADP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7370ADP-T1-GE3?
All SI7370ADP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7370ADP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7370ADP-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7370ADP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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