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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7370DP-T1-GE3

Name: SI7370DP-T1-GE3
Brand: Vishay Siliconix
SKU: SI7370DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7370DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7370DP-T1-GE3.pdf

Description:: MOSFET N-CH 60V 9.6A PPAK SO-8

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Product details

Overview

SI7370DP-T1-GE3 from Vishay Siliconix is an N-channel 60 V (D-S) TrenchFET® power MOSFET in PowerPAK® SO-8 package, delivering R_DS(on) = 9.0 mΩ at V_GS = 10 V and 10.5 mΩ at V_GS = 6 V, with 46 nC total gate charge and 15.8 A continuous drain current (T_J = 150 °C). It serves as a primary-side switch in 24 V DC/DC converters and secondary-side synchronous rectifier.

For engineers reviewing the SI7370DP-T1-GE3 datasheet, SI7370DP-T1-GE3 pinout, SI7370DP-T1-GE3 application, or SI7370DP-T1-GE3 equivalent, key selection criteria include low R_DS(on) at 6 V gate drive, fast switching performance for PWM, thermal resistance of 1.5 °C/W (junction-to-case), and compatibility with standard SO-8 PCB footprints while offering DPAK-level thermal performance.

Technical Context

This MOSFET uses trench-gate silicon technology optimized for high-efficiency switching in medium-voltage DC/DC topologies. Its gate threshold voltage (2–4 V) enables reliable turn-on with 5 V or 6 V logic-level drivers, and its low Q_g/Q_gd ratio supports clean, fast transitions with minimal switching loss.

The PowerPAK® SO-8 package features an exposed copper drain pad on the bottom surface, enabling direct thermal conduction to the PCB, and maintains identical pinout and footprint to standard SO-8 - allowing drop-in replacement without layout changes while achieving R_thJC = 1.5 °C/W and R_thJA = 19 °C/W (t ≤ 10 s).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - supports input rails up to 24 V DC/DC with margin for transients and ringing
R_DS(on) @ V_GS = 10 V	9.0 mΩ typ. - enables <1.5 W conduction loss at 12 A, critical for high-current primary switches
R_DS(on) @ V_GS = 6 V	10.5 mΩ typ. - ensures robust operation with 5 V or 6 V gate drivers in synchronous rectification
Q_g	46 nC typ. - balances switching speed and driver strength requirements in 100–500 kHz PWM designs
I_D (continuous)	15.8 A @ T_J = 150 °C - defines maximum steady-state current under thermally constrained conditions
R_thJC	1.5 °C/W - allows efficient heat transfer from die to PCB copper, enabling compact thermal design
V_GS(th)	2–4 V - guarantees turn-on with standard logic-level gate drivers and avoids false triggering

Pinout & Package

SI7370DP-T1-GE3 is housed in a leadless PowerPAK® SO-8 package (5.15 mm × 6.15 mm × 1.07 mm), with exposed drain terminals on the bottom and standard SO-8 pinout compatibility. The package delivers DPAK-equivalent thermal performance in an SO-8 footprint.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source connections reduce source inductance and improve current sharing in high-di/dt applications
5, 6, 7, 8	Drain (D)	Exposed copper drain pad on bottom surface provides primary thermal path to PCB; pins 5–8 are internally tied to this pad
G (Gate)	Gate (G)	Single gate terminal (pin 1 not used for gate; gate is pin 3 per top-view diagram - correction: per datasheet top view, pin 3 is Gate) - verified from S09-0270-Rev. F Figure 1: Pin 3 = G, Pins 1/2/4 = S, Pins 5–8 = D

Key Features

Feature	Design Value
TrenchFET® process technology	Delivers ultra-low R_DS(on) and high cell density for reduced conduction loss in space-constrained 24 V systems
PowerPAK® SO-8 package	Enables direct replacement of standard SO-8 MOSFETs while improving thermal resistance by 3.5× (vs. 52 °C/W SO-8)
PWM-optimized switching	Low Q_gd/Q_g ratio (≈0.25) minimizes Miller-induced switching delay and improves hard-switching efficiency
100 % R_g tested	Ensures consistent gate drive timing and eliminates batch-to-batch variation in turn-on/turn-off behavior
Lead (Pb)-free and halogen-free	Meets RoHS Directive 2011/65/EU and JEDEC JS709C requirements for environmentally compliant manufacturing

Applications

Primary-Side Switch in Isolated DC/DC Converters	Synchronous Rectification in Secondary Side
Use Scenario: High-efficiency 24 V input isolated flyback or forward converter powering industrial I/O modules. IC Role / Device Role / Timing Role: Primary-side N-channel switching transistor driven by PWM controller at 200–300 kHz. Use Value: Low 9.0 mΩ R_DS(on) reduces conduction loss; fast 16 ns turn-on delay enables tight duty-cycle control and high-frequency operation.	Use Scenario: Secondary-side rectification in 12 V output telecom power supply with tight thermal envelope. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode, driven by gate driver synchronized to transformer secondary waveform. Use Value: 10.5 mΩ R_DS(on) at 6 V gate drive enables >3 % efficiency gain over 40 V Schottky; low Q_g supports precise timing alignment.
Motor Drive Half-Bridge High-Side	Hot-Swap and Load Switching
Use Scenario: 24 V BLDC motor gate driver stage requiring high-side switching with bootstrap gate drive. IC Role / Device Role / Timing Role: High-side N-channel MOSFET in half-bridge configuration, switched at ≤50 kHz with bootstrap-supplied gate voltage. Use Value: 4 V max V_GS(th) ensures reliable turn-on during bootstrap decay; 1.5 °C/W R_thJC sustains 10 A continuous current without external heatsink.	Use Scenario: Inrush-limited 24 V power rail for FPGA or DSP subsystem in ruggedized embedded system. IC Role / Device Role / Timing Role: Load switch controlling power delivery to downstream circuitry, with gate driven by microcontroller GPIO. Use Value: Low 2 V min V_GS(th) allows direct 3.3 V GPIO control; 15.8 A rating supports >10 A sustained load with margin for surge currents.

Primary-Side Switch in Isolated DC/DC Converters

Synchronous Rectification in Secondary Side

Use Scenario: High-efficiency 24 V input isolated flyback or forward converter powering industrial I/O modules.

IC Role / Device Role / Timing Role: Primary-side N-channel switching transistor driven by PWM controller at 200–300 kHz.

Use Value: Low 9.0 mΩ R_DS(on) reduces conduction loss; fast 16 ns turn-on delay enables tight duty-cycle control and high-frequency operation.

Use Scenario: Secondary-side rectification in 12 V output telecom power supply with tight thermal envelope.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode, driven by gate driver synchronized to transformer secondary waveform.

Use Value: 10.5 mΩ R_DS(on) at 6 V gate drive enables >3 % efficiency gain over 40 V Schottky; low Q_g supports precise timing alignment.

Motor Drive Half-Bridge High-Side

Hot-Swap and Load Switching

Use Scenario: 24 V BLDC motor gate driver stage requiring high-side switching with bootstrap gate drive.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET in half-bridge configuration, switched at ≤50 kHz with bootstrap-supplied gate voltage.

Use Value: 4 V max V_GS(th) ensures reliable turn-on during bootstrap decay; 1.5 °C/W R_thJC sustains 10 A continuous current without external heatsink.

Use Scenario: Inrush-limited 24 V power rail for FPGA or DSP subsystem in ruggedized embedded system.

IC Role / Device Role / Timing Role: Load switch controlling power delivery to downstream circuitry, with gate driven by microcontroller GPIO.

Use Value: Low 2 V min V_GS(th) allows direct 3.3 V GPIO control; 15.8 A rating supports >10 A sustained load with margin for surge currents.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7862DP-T1-GE3	R_DS(on) = 7.5 mΩ @ 10 V, higher Q_g = 62 nC, same PowerPAK SO-8 package	Better conduction loss but slower switching; suited for lower-frequency, high-current apps where gate drive strength is available	Choose Si7862DP-T1-GE3 when minimizing conduction loss dominates over switching loss and gate driver can support 62 nC.
IRF7470PBF	SO-8 package (leaded), R_DS(on) = 11.5 mΩ @ 10 V, R_thJA = 62 °C/W, no exposed drain pad	Higher thermal resistance limits power handling; requires larger PCB copper or heatsink for same current	Choose IRF7470PBF only if legacy SO-8 leaded assembly is mandated and thermal budget permits 30 % higher junction temperature rise.

Compared with Si7862DP-T1-GE3, SI7370DP-T1-GE3 trades 1.5 mΩ higher R_DS(on) for 16 nC lower Q_g, favoring high-frequency PWM efficiency; versus IRF7470PBF, it delivers 3.5× better thermal resistance and 10 % lower R_DS(on), enabling smaller, cooler, and more reliable 24 V power stages.

Availability

SI7370DP-T1-GE3 is available at Aetrix Electronics and suitable for 24 V DC/DC converters, synchronous rectifiers, and industrial motor drive half-bridges requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for SI7370DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SI7370DP-T1-GE3 belongs to Vishay's PowerPAK® SO-8 TrenchFET® family, engineered specifically for high-density, thermally demanding DC/DC conversion and synchronous rectification in industrial and telecom power systems.

FAQ

What is the maximum continuous drain current rating for SI7370DP-T1-GE3 at 70 °C ambient temperature?

The SI7370DP-T1-GE3 supports 12.6 A continuous drain current at T_A = 70 °C, as specified in the Absolute Maximum Ratings table under steady-state conditions. This value assumes proper PCB thermal design with adequate copper area on the drain pad; actual current capability depends on board layout, airflow, and adjacent heat sources. The SI7370DP-T1-GE3 datasheet (S09-0270-Rev. F) confirms this rating is valid for T_J ≤ 150 °C.

Does SI7370DP-T1-GE3 require a gate resistor for safe operation in PWM applications?

While the SI7370DP-T1-GE3 does not mandate a gate resistor, a series gate resistor (typically 2–10 Ω) is recommended to dampen ringing, control dV/dt, and prevent shoot-through in bridge configurations. The SI7370DP-T1-GE3 gate resistance is specified as 0.2–1.2 Ω, so external resistance adjusts total loop inductance and switching speed. For 200–500 kHz PWM, 4.7 Ω is commonly used with the SI7370DP-T1-GE3 to balance EMI and efficiency.

Can SI7370DP-T1-GE3 be used as a direct replacement for standard SO-8 MOSFETs on existing PCBs?

Yes, SI7370DP-T1-GE3 uses the identical footprint and pinout of standard SO-8 packages, enabling drop-in replacement without PCB modifications. However, its PowerPAK® SO-8 construction places the drain on the bottom-side copper pad - so the PCB land pattern must expose that area for thermal conduction. The SI7370DP-T1-GE3 achieves DPAK-level thermal performance on SO-8 layouts when the drain pad is properly connected to internal copper planes.

What is the safe operating area (SOA) limitation for SI7370DP-T1-GE3 at DC and pulse conditions?

The SI7370DP-T1-GE3 SOA curve (Figure 4, page 4 of S09-0270-Rev. F) shows DC operation is limited by R_DS(on) to ~10 A at V_DS = 10 V, while single-pulse capability reaches 50 A at V_DS = 30 V for 10 ms. At 100 μs pulses, it supports 50 A up to 45 V. These boundaries reflect both thermal and avalanche limits - the SI7370DP-T1-GE3 is rated for 50 A pulsed drain current and 125 mJ single-pulse avalanche energy.

Is SI7370DP-T1-GE3 suitable for linear-mode (active region) operation such as hot-swap or electronic fuse applications?

The SI7370DP-T1-GE3 is characterized for switching operation, and its Safe Operating Area (SOA) supports limited linear-mode use - e.g., 2 A at 20 V (40 W) for short durations - but sustained linear operation risks thermal runaway due to positive temperature coefficient of R_DS(on). For dedicated hot-swap or eFuse roles, Vishay recommends purpose-built load switches like the SiP32411; the SI7370DP-T1-GE3 should only be used in linear mode with strict current limiting and thermal monitoring.

SI7370DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 9.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 11mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 57 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.9W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7370DP-T1-GE3 FAQ

1.How can I place an order for SI7370DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7370DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7370DP-T1-GE3 reliable?

The price and inventory of SI7370DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7370DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI7370DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7370DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7370DP-T1-GE3?

SI7370DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7370DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7370DP-T1-GE3?

For technical support, including SI7370DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7370DP-T1-GE3 requirements.

6.How does Aetrix verify that SI7370DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI7370DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7370DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI7370DP-T1-GE3?

All SI7370DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7370DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7370DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SI7370DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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