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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7374DP-T1-E3

Name: SI7374DP-T1-E3
Brand: Vishay Siliconix
SKU: SI7374DP-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7374DP-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7374DP-T1-E3.pdf

Description:: MOSFET N-CH 30V 24A PPAK SO-8

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Product details

Overview

SI7374DP-T1-E3 from Vishay Siliconix is an N-channel 30-V TrenchFET® Power MOSFET with integrated Schottky diode in PowerPAK SO-8 package. It delivers R_DS(on) = 5.5 mΩ at V_GS = 10 V and 6.6 mΩ at V_GS = 4.5 V, supports 24 A continuous drain current (T_C = 25 °C), and features 36 nC typical gate charge - optimized for CPU core low-side switching and secondary synchronous rectification in DC/DC converters.

For engineers reviewing the SI7374DP-T1-E3 datasheet, SI7374DP-T1-E3 pinout, SI7374DP-T1-E3 application, or SI7374DP-T1-E3 equivalent, key selection criteria include its 30-V V_DS, integrated Schottky body diode with 0.39 V forward voltage at 1 A, 100% R_g tested gate resistance, halogen-free construction, and PowerPAK SO-8 footprint compatibility with standard SO-8 layouts.

Technical Context

This device integrates a high-conductivity N-channel MOSFET and a low-forward-voltage Schottky diode in a single PowerPAK SO-8 package - enabling synchronous rectification without external diode placement. Its trench-based silicon structure achieves low R_DS(on) and high transconductance (g_fs = 95 S), while the monolithic integration reduces parasitic inductance and improves switching efficiency in high-frequency buck converters.

The PowerPAK SO-8 package exposes the drain pad on the bottom surface for direct thermal coupling to PCB copper, achieving R_thJC = 1.7 °C/W (typ.) and R_thJA = 20 °C/W (t ≤ 10 s). The device operates across –55 °C to +150 °C junction temperature range and supports gate drive voltages from ±20 V, with V_GS(th) = 1.5–2.8 V ensuring robust turn-on under 4.5-V logic-level control.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24-V input rails and 12-V intermediate bus systems.
R_DS(on)	5.5 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 15 A, critical for high-efficiency CPU core power stages.
I_D (continuous)	24 A @ T_C = 25 °C - Supports high-current low-side switching in multiphase VRMs without forced airflow.
Q_g	36 nC (typ.) @ V_GS = 4.5 V - Low gate charge minimizes driver power and enables efficient operation at >500 kHz switching frequencies.
V_SD	0.39 V @ I_F = 1 A - Schottky diode forward drop reduces reverse-recovery losses versus conventional body diodes.
R_thJC	1.7 °C/W (typ.) - Enables direct heat transfer from die to PCB, supporting thermal design without heatsinks in space-constrained applications.

Pinout & Package

SI7374DP-T1-E3 uses the PowerPAK SO-8 package - a leadless, surface-mount outline measuring 6.15 mm × 5.15 mm with exposed drain pad on the bottom. It maintains identical footprint and pinout to standard SO-8, allowing drop-in replacement on existing layouts.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Drain (D)	Common high-current output node; electrically connected to exposed bottom pad for low-inductance, low-resistance thermal and power path.
5	Gate (G)	Control terminal requiring <2.8 V threshold; driven by PWM controller with <1.4 Ω gate resistance for predictable switching timing.
6, 7, 8	Source (S)	Return path for MOSFET channel and Schottky anode; tied to power ground plane to minimize common-source inductance.

Key Features

Feature	Design Value
TrenchFET® architecture	Enables ultra-low R_DS(on) and high current density in compact PowerPAK SO-8 footprint - matching DPAK thermal performance in SO-8 area.
Integrated Schottky diode	Eliminates external diode requirement in synchronous rectifiers; 0.39 V V_F at 1 A reduces conduction loss and eliminates reverse recovery charge (Q_rr = 39–60 nC).
100% R_g tested	Guarantees consistent gate drive timing and EMI behavior across production lots - essential for multi-phase current sharing stability.
Halogen-free construction	Complies with IEC 61249-2-21 and RoHS; eliminates brominated flame retardants without compromising package mechanical or thermal integrity.
PowerPAK SO-8 footprint	Direct replacement for standard SO-8 footprints; no PCB redesign needed - enables upgrade path from legacy MOSFETs with improved thermal and electrical performance.

Applications

CPU Core Low-Side Switching	Secondary Synchronous Rectification
Use Scenario: High-current, high-frequency buck converter supplying modern CPU cores with dynamic load steps up to 100 A/µs. IC Role / Device Role / Timing Role: Low-side switch conducting return current during high-side FET off-time; synchronized with controller's gate drive signal. Use Value: 5.5 mΩ R_DS(on) and 36 nC Q_g minimize both conduction and switching losses, enabling >95% efficiency at 1 MHz operation.	Use Scenario: Output rectification stage in isolated DC/DC converters for telecom and server power supplies. IC Role / Device Role / Timing Role: Synchronous rectifier replacing flyback or forward converter output diode; body diode conducts during dead time, MOSFET conducts during active period. Use Value: Integrated Schottky diode ensures fast, soft reverse recovery (t_rr = 45–70 ns) and low V_F, reducing voltage stress and EMI during transition.
Point-of-Load (POL) Regulators	Industrial Motor Control Drivers
Use Scenario: Compact 3.3-V or 5-V POL module powering FPGA I/O banks or ASIC auxiliary rails in dense PCB layouts. IC Role / Device Role / Timing Role: Low-side power switch in compact 2-layer board designs where thermal headroom is limited. Use Value: PowerPAK SO-8's 1.7 °C/W R_thJC allows full 24-A rating with only 2 oz copper and minimal thermal vias - eliminating need for thermal relief cuts or extra layers.	Use Scenario: Half-bridge leg in 24-V brushed DC motor drivers for factory automation equipment. IC Role / Device Role / Timing Role: Low-side switch controlling motor winding current direction and braking via PWM-controlled freewheeling path. Use Value: 30-V V_DS withstands inductive kickback up to 40 V; integrated Schottky provides reliable freewheeling without external diode count or layout complexity.

CPU Core Low-Side Switching

Secondary Synchronous Rectification

Use Scenario: High-current, high-frequency buck converter supplying modern CPU cores with dynamic load steps up to 100 A/µs.

IC Role / Device Role / Timing Role: Low-side switch conducting return current during high-side FET off-time; synchronized with controller's gate drive signal.

Use Value: 5.5 mΩ R_DS(on) and 36 nC Q_g minimize both conduction and switching losses, enabling >95% efficiency at 1 MHz operation.

Use Scenario: Output rectification stage in isolated DC/DC converters for telecom and server power supplies.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing flyback or forward converter output diode; body diode conducts during dead time, MOSFET conducts during active period.

Use Value: Integrated Schottky diode ensures fast, soft reverse recovery (t_rr = 45–70 ns) and low V_F, reducing voltage stress and EMI during transition.

Point-of-Load (POL) Regulators

Industrial Motor Control Drivers

Use Scenario: Compact 3.3-V or 5-V POL module powering FPGA I/O banks or ASIC auxiliary rails in dense PCB layouts.

IC Role / Device Role / Timing Role: Low-side power switch in compact 2-layer board designs where thermal headroom is limited.

Use Value: PowerPAK SO-8's 1.7 °C/W R_thJC allows full 24-A rating with only 2 oz copper and minimal thermal vias - eliminating need for thermal relief cuts or extra layers.

Use Scenario: Half-bridge leg in 24-V brushed DC motor drivers for factory automation equipment.

IC Role / Device Role / Timing Role: Low-side switch controlling motor winding current direction and braking via PWM-controlled freewheeling path.

Use Value: 30-V V_DS withstands inductive kickback up to 40 V; integrated Schottky provides reliable freewheeling without external diode count or layout complexity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET with integrated Schottky diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7446DP-T1-E3	Same PowerPAK SO-8 package, 30-V rating, but higher R_DS(on) = 7.5 mΩ @ 10 V and lower I_D = 18 A.	Suitable for lower-current POL or lighting drivers where thermal margin is less constrained.	Select when cost sensitivity outweighs efficiency requirements and peak current stays below 15 A.
Si7372DP-T1-E3	Identical package and pinout; 40-V V_DS, R_DS(on) = 7.0 mΩ @ 10 V, I_D = 20 A, same Schottky integration.	Better suited for 36-V industrial input rails or automotive 24-V systems with load dump transients.	Choose for higher voltage margin where 30-V rating of SI7374DP-T1-E3 may be insufficient under transient conditions.

Compared with Si7446DP-T1-E3 and Si7372DP-T1-E3, SI7374DP-T1-E3 offers the lowest R_DS(on) in the 30-V PowerPAK SO-8 family - delivering superior conduction efficiency in high-current, thermally constrained CPU core and POL applications without sacrificing footprint or layout compatibility.

Availability

SI7374DP-T1-E3 is available at Aetrix Electronics and suitable for CPU core power delivery, secondary synchronous rectification, point-of-load regulation, and industrial motor control requiring stable component supply and long-term manufacturing continuity.

Supply support for SI7374DP-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SI7374DP-T1-E3 belongs to Vishay's TrenchFET® PowerPAK SO-8 product line, engineered specifically for high-current, high-frequency DC/DC conversion where low R_DS(on), fast switching, and integrated Schottky functionality are critical.

FAQ

What is the maximum continuous drain current rating for SI7374DP-T1-E3 at 70 °C case temperature?

The SI7374DP-T1-E3 supports 24 A continuous drain current at T_C = 70 °C, per the Absolute Maximum Ratings table. This rating assumes proper PCB thermal design with adequate copper area and thermal vias to maintain case temperature - not ambient temperature - at or below 70 °C during operation.

Does SI7374DP-T1-E3 require a heatsink in typical 24-A applications?

No, SI7374DP-T1-E3 does not require an external heatsink when mounted on a standard 4-layer FR-4 PCB with ≥1 oz copper on inner layers and ≥2 oz on outer layers. Its PowerPAK SO-8 package achieves R_thJC = 1.7 °C/W, enabling full 24-A current handling with junction temperature maintained below 150 °C using only PCB copper as the thermal path.

Is SI7374DP-T1-E3 pin-compatible with standard SO-8 MOSFETs?

Yes, SI7374DP-T1-E3 uses the PowerPAK SO-8 package with identical footprint, dimensions, and pinout to standard SO-8 - including pins 1–4 as Drain, pin 5 as Gate, and pins 6–8 as Source. It can be mounted directly onto existing SO-8 land patterns without layout changes.

What is the Schottky diode forward voltage specification for SI7374DP-T1-E3?

The integrated Schottky diode in SI7374DP-T1-E3 has a forward voltage of 0.35–0.39 V at I_F = 1 A and T_J = 25 °C, and 0.27–0.31 V at I_F = 1 A and T_J = 150 °C. This low V_F reduces conduction loss and eliminates reverse recovery charge compared to conventional MOSFET body diodes.

Can SI7374DP-T1-E3 be used with 3.3-V gate drive?

Yes, SI7374DP-T1-E3 is fully specified for 4.5-V gate drive (R_DS(on) = 6.6 mΩ), and its V_GS(th) range of 1.5–2.8 V ensures reliable turn-on with 3.3-V logic. However, R_DS(on) increases to ~8.5 mΩ at 3.3 V (extrapolated from typical curves), so system efficiency must be validated at actual operating current and temperature.

SI7374DP-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.5mOhm @ 23.8A, 10V

Vgs(th) (Max) @ Id:: 2.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 122 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5500 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 56W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7374DP-T1-E3 FAQ

1.How can I place an order for SI7374DP-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7374DP-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7374DP-T1-E3 reliable?

The price and inventory of SI7374DP-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7374DP-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI7374DP-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7374DP-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7374DP-T1-E3?

SI7374DP-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7374DP-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7374DP-T1-E3?

For technical support, including SI7374DP-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7374DP-T1-E3 requirements.

6.How does Aetrix verify that SI7374DP-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI7374DP-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7374DP-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI7374DP-T1-E3?

All SI7374DP-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7374DP-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7374DP-T1-E3 part is unused and in its original packaging.

Return procedure for SI7374DP-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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