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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7374DP-T1-GE3

Name: SI7374DP-T1-GE3
Brand: Vishay Siliconix
SKU: SI7374DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7374DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7374DP-T1-GE3.pdf

Description:: MOSFET N-CH 30V 24A PPAK SO-8

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Product details

Overview

SI7374DP-T1-GE3 from Vishay Siliconix is an N-channel 30-V TrenchFET® Power MOSFET with integrated Schottky diode in PowerPAK® SO-8 package, delivering R_DS(on) = 5.5 mΩ at V_GS = 10 V and 6.6 mΩ at V_GS = 4.5 V, rated for 24 A continuous drain current (T_C = 25 °C), and optimized for CPU core low-side switching and secondary synchronous rectification in DC/DC converters.

For engineers reviewing the SI7374DP-T1-GE3 datasheet, SI7374DP-T1-GE3 pinout, SI7374DP-T1-GE3 application, or SI7374DP-T1-GE3 equivalent, key selection criteria include its halogen-free and lead-free construction, 36 nC total gate charge at 10 V, 0.39 V Schottky forward voltage at 1.0 A, and thermal resistance R_thJC = 1.7 °C/W for high-efficiency power stage design.

Technical Context

The SI7374DP-T1-GE3 integrates a low-R_DS(on) N-channel MOSFET and a monolithically co-packaged Schottky diode in a single PowerPAK SO-8 footprint - identical to standard SO-8 pinout but with exposed drain pad for enhanced thermal conduction. Its trench-based silicon structure enables stable threshold voltage (V_GS(th) = 1.5–2.8 V) and high transconductance (g_fs = 95 S).

This device operates under synchronous rectification control logic, where the MOSFET channel conducts during the on-phase while the Schottky diode provides reverse-recovery-free freewheeling during dead time. Body diode reverse recovery time (t_rr) is specified at 45–70 ns, and Q_rr = 39–60 nC, confirming fast switching capability without tail current.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24-V input rails and 12-V intermediate bus architectures.
R_DS(on) @ V_GS = 10 V	5.5 mΩ - Enables <1.3 W conduction loss at 20 A, critical for high-current CPU core low-side stages.
R_DS(on) @ V_GS = 4.5 V	6.6 mΩ - Ensures robust operation with 5-V gate drive in legacy or low-voltage controller designs.
Q_g (total)	38–57 nC @ 4.5 V - Supports efficient PWM switching up to ~1 MHz with moderate gate driver strength.
V_F (Schottky)	0.35–0.39 V @ I_F = 1 A - Reduces freewheeling losses by >40% vs. standard body diodes in synchronous buck topologies.
R_thJC	1.7 °C/W (typ.) - Allows direct thermal coupling to PCB copper, enabling >50 W power dissipation with minimal heatsinking.
I_D (continuous)	24 A @ T_C = 25 °C - Validated for sustained load currents in server VRMs and telecom POL modules.

Pinout & Package

SI7374DP-T1-GE3 uses the PowerPAK® SO-8 package - a leadless, surface-mount outline with identical footprint and pinout to standard SO-8, featuring an exposed drain pad on the bottom for low thermal resistance. Dimensions: 6.15 mm × 5.15 mm × 1.04 mm (L × W × H).

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal for MOSFET channel; requires ≤ ±20 V rating and low-inductance routing to minimize switching overshoot.
2 (S)	Source	Reference node for gate drive and current sensing; tied to power ground plane in synchronous rectifier layout.
3 (D)	Drain (Terminal 1)	High-side connection to input rail; electrically and thermally connected to large copper pour via bottom-exposed pad.
4 (D)	Drain (Terminal 2)	Parallel drain path sharing same potential as Pin 3; increases current capacity and reduces package inductance.
5 (D)	Drain (Terminal 3)	Third drain terminal enhancing thermal and electrical performance; all three D pins are internally shorted.
6 (D)	Drain (Terminal 4)	Fourth drain terminal completing symmetric drain structure; critical for minimizing R_DS(on) and thermal gradient.
7 (S)	Source (Terminal 1)	Secondary source connection; shares node with Pin 2 and supports high-current return path to ground plane.
8 (S)	Source (Terminal 2)	Additional source terminal improving current distribution and reducing parasitic inductance in high-dI/dt paths.

Key Features

Feature	Design Value
TrenchFET® technology	Enables ultra-low R_DS(on) and high cell density, allowing 24 A rating in SO-8 footprint without derating.
Integrated Schottky diode	Eliminates reverse recovery losses and EMI spikes, enabling clean zero-voltage switching in synchronous rectifiers.
100 % R_g tested	Guarantees gate resistance ≤ 1.4 Ω, ensuring predictable turn-on/turn-off timing and driver compatibility.
Halogen-free & Pb-free	Complies with IEC 61249-2-21 and RoHS Directive 2011/65/EU for environmentally regulated industrial and computing applications.
PowerPAK SO-8 package	Delivers DPAK-level thermal performance (R_thJC = 1.7 °C/W) in SO-8 footprint - no PCB redesign required for drop-in upgrade.

Applications

CPU Core Low-Side Switch	Secondary Synchronous Rectifier
Use Scenario: High-current, high-frequency buck converter supplying modern multi-core CPUs with dynamic load steps up to 300 A/µs. IC Role / Device Role: Low-side switch conducting during PWM on-time; Schottky diode handles freewheeling during off-time. Use Value: 5.5 mΩ R_DS(on) minimizes conduction loss at 20–30 A, while 0.39 V V_F cuts diode loss by >50% vs. discrete solutions.	Use Scenario: Isolated DC/DC converter output stage in telecom base station power supplies operating at 300–500 kHz. IC Role / Device Role: Synchronous rectifier replacing flyback diode to improve efficiency and reduce thermal stress. Use Value: 45 ns t_rr and 39 nC Q_rr prevent shoot-through and enable tight dead-time control, boosting efficiency by 2–3%.
Point-of-Load (POL) Regulator	Server Voltage Regulator Module (VRM)
Use Scenario: Compact 12 V-to-1.2 V conversion for FPGA or ASIC power domains in space-constrained embedded systems. IC Role / Device Role: Low-side MOSFET in multiphase buck topology with integrated Schottky for reduced BOM count. Use Value: PowerPAK SO-8's 1.04 mm height allows stacking with inductors; 24 A rating supports >100 A per phase with paralleling.	Use Scenario: Multi-phase VRM delivering >300 A to enterprise CPUs with strict thermal and efficiency targets. IC Role / Device Role: Primary low-side switch in each phase, leveraging parallel drain/source terminals for current sharing. Use Value: Four drain and two source terminals reduce package inductance (<0.5 nH), suppressing voltage spikes during 200 A/µs dI/dt events.

CPU Core Low-Side Switch

Secondary Synchronous Rectifier

Use Scenario: High-current, high-frequency buck converter supplying modern multi-core CPUs with dynamic load steps up to 300 A/µs.

IC Role / Device Role: Low-side switch conducting during PWM on-time; Schottky diode handles freewheeling during off-time.

Use Value: 5.5 mΩ R_DS(on) minimizes conduction loss at 20–30 A, while 0.39 V V_F cuts diode loss by >50% vs. discrete solutions.

Use Scenario: Isolated DC/DC converter output stage in telecom base station power supplies operating at 300–500 kHz.

IC Role / Device Role: Synchronous rectifier replacing flyback diode to improve efficiency and reduce thermal stress.

Use Value: 45 ns t_rr and 39 nC Q_rr prevent shoot-through and enable tight dead-time control, boosting efficiency by 2–3%.

Point-of-Load (POL) Regulator

Server Voltage Regulator Module (VRM)

Use Scenario: Compact 12 V-to-1.2 V conversion for FPGA or ASIC power domains in space-constrained embedded systems.

IC Role / Device Role: Low-side MOSFET in multiphase buck topology with integrated Schottky for reduced BOM count.

Use Value: PowerPAK SO-8's 1.04 mm height allows stacking with inductors; 24 A rating supports >100 A per phase with paralleling.

Use Scenario: Multi-phase VRM delivering >300 A to enterprise CPUs with strict thermal and efficiency targets.

IC Role / Device Role: Primary low-side switch in each phase, leveraging parallel drain/source terminals for current sharing.

Use Value: Four drain and two source terminals reduce package inductance (<0.5 nH), suppressing voltage spikes during 200 A/µs dI/dt events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET-with-integrated-Schottky applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7446DP-T1-GE3	R_DS(on) = 4.0 mΩ @ 10 V (lower), Q_g = 48 nC @ 10 V (higher), same PowerPAK SO-8 package and Schottky integration.	Better conduction loss at high current but higher gate drive demand; suited for fixed 10-V gate drive systems.	Select when lowest R_DS(on) is prioritized over gate charge; verify driver can supply >1 A peak current.
Si7354DP-T1-GE3	R_DS(on) = 7.5 mΩ @ 10 V (higher), Q_g = 29 nC @ 10 V (lower), same footprint and Schottky diode (V_F = 0.42 V).	Lower gate charge enables faster switching at marginal gate drive; trade-off is +36% conduction loss vs. SI7374DP-T1-GE3.	Prefer for high-frequency (>1 MHz) POL designs where switching loss dominates, and gate drive is limited.

Compared with Si7446DP-T1-GE3 and Si7354DP-T1-GE3, SI7374DP-T1-GE3 strikes a balanced compromise: mid-range R_DS(on) and Q_g make it optimal for 300–600 kHz VRMs with 5–10 V gate drivers, while maintaining full compatibility with existing SO-8 layouts and thermal management practices.

Availability

SI7374DP-T1-GE3 is available at Aetrix Electronics and suitable for CPU core low-side switching, secondary synchronous rectification, and point-of-load regulation requiring stable component supply, halogen-free compliance, and proven thermal reliability in high-power density designs.

Supply support for SI7374DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SI7374DP-T1-GE3 belongs to Vishay's PowerPAK® SO-8 TrenchFET® family, engineered specifically for high-current, high-frequency DC/DC conversion in computing, telecom, and industrial power systems where thermal performance and integration are critical.

FAQ

What is the maximum continuous drain current rating for SI7374DP-T1-GE3 at 70 °C case temperature?

The SI7374DP-T1-GE3 is rated for 24 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This value remains unchanged from its 25 °C rating due to the device's thermal design and PowerPAK SO-8 package construction, which maintains low junction-to-case resistance (R_thJC = 1.7 °C/W) across the operating range. Derating begins only above 70 °C case temperature.

Does SI7374DP-T1-GE3 support 4.5 V gate drive in synchronous rectifier applications?

Yes, SI7374DP-T1-GE3 is fully characterized for 4.5 V gate drive: R_DS(on) = 6.6 mΩ (max) at I_D = 21.8 A and V_GS = 4.5 V, and total gate charge Q_g = 38–57 nC under those conditions. Its V_GS(th) range of 1.5–2.8 V ensures reliable enhancement-mode turn-on with standard 5-V logic-level controllers, making SI7374DP-T1-GE3 suitable for legacy and low-voltage synchronous rectifier designs.

How does the integrated Schottky diode in SI7374DP-T1-GE3 improve efficiency compared to using a discrete MOSFET and diode?

The integrated Schottky diode in SI7374DP-T1-GE3 eliminates reverse recovery charge (Q_rr ≈ 0) and reduces forward voltage drop to 0.35–0.39 V at 1 A, versus >0.7 V for standard silicon diodes. In synchronous buck converters, this cuts freewheeling conduction loss by >40% and removes EMI-generating reverse recovery spikes - directly improving system efficiency by 1.5–2.5% and simplifying EMI filter design. SI7374DP-T1-GE3 achieves this without increasing footprint or thermal interface complexity.

Is SI7374DP-T1-GE3 pin-compatible with standard SO-8 MOSFETs?

Yes, SI7374DP-T1-GE3 uses the PowerPAK® SO-8 package, which has identical mechanical footprint, pin count, and pinout (G-S-D-D-D-D-S-S) to industry-standard SO-8. Vishay explicitly states it "can be substituted directly for a standard SO-8 package" - meaning no PCB layout changes are needed. However, the bottom-exposed drain pad requires matching copper land pattern per Application Note AN821 for optimal thermal performance.

What is the thermal resistance from junction to ambient (R_thJA) for SI7374DP-T1-GE3 on a standard 1" × 1" FR4 board?

Per the datasheet (Document Number: 73560, Rev. B), the maximum junction-to-ambient thermal resistance R_thJA for SI7374DP-T1-GE3 on a 1" × 1" FR4 board is 25 °C/W, with a typical value of 20 °C/W. This value assumes standard JEDEC test conditions (single-sided copper, no heatsink). With optimized PCB layout - including full drain-pad copper pour and internal ground/power planes - R_thJA can be reduced to <10 °C/W, significantly extending safe operating area for SI7374DP-T1-GE3.

SI7374DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.5mOhm @ 23.8A, 10V

Vgs(th) (Max) @ Id:: 2.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 122 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5500 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 5W (Ta), 56W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7374DP-T1-GE3 FAQ

1.How can I place an order for SI7374DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7374DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7374DP-T1-GE3 reliable?

The price and inventory of SI7374DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7374DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI7374DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7374DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7374DP-T1-GE3?

SI7374DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7374DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7374DP-T1-GE3?

For technical support, including SI7374DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7374DP-T1-GE3 requirements.

6.How does Aetrix verify that SI7374DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI7374DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7374DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI7374DP-T1-GE3?

All SI7374DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7374DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7374DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SI7374DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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