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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7380ADP-T1-E3

Name: SI7380ADP-T1-E3
Brand: Vishay Siliconix
SKU: SI7380ADP-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7380ADP-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7380ADP-T1-E3.pdf

Description:: MOSFET N-CH 30V 40A PPAK SO-8

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Product details

Overview

SI7380ADP-T1-E3 from Vishay Siliconix is a N-channel 30-V (D-S) MOSFET optimized for low-side switching in synchronous buck converters and secondary-side synchronous rectification. It delivers 40 A continuous drain current at T_C = 25 °C, 3 mΩ R_DS(on) at V_GS = 10 V, and 54 nC total gate charge-enabling high-efficiency, high-frequency DC/DC conversion in desktop and server power supplies.

For engineers reviewing the SI7380ADP-T1-E3 datasheet, SI7380ADP-T1-E3 pinout, SI7380ADP-T1-E3 application, or SI7380ADP-T1-E3 equivalent, key selection criteria include its PowerPAK SO-8 package thermal performance (R_thJC = 1.0 °C/W), PWM-optimized gate charge profile, and validated 100 % R_g testing for consistent switching behavior across production lots.

Technical Context

This MOSFET employs Vishay's TrenchFET® technology to achieve low on-resistance with fast switching dynamics. Its gate threshold voltage (0.6–1.6 V) supports logic-level drive compatibility, while the 335 pF reverse transfer capacitance (C_rss) and 7785 pF input capacitance (C_iss) are tuned for stable operation under hard-switching conditions in synchronous rectifier topologies.

The device operates within a -55 °C to +150 °C junction temperature range and features a body diode with 45–70 ns reverse recovery time (t_rr) and 52–80 nC reverse recovery charge (Q_rr), critical for minimizing losses during freewheeling intervals in high-current, high-frequency converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage suitable for 12 V and 24 V input bus systems
R_DS(on)	0.003 Ω @ V_GS = 10 V - Enables <1 W conduction loss at 20 A, reducing thermal load in compact layouts
I_D (continuous)	40 A @ T_C = 25 °C - Supports high-current low-side switch or synchronous rectifier roles without forced air cooling
Q_g	54 nC @ V_GS = 4.5 V - Low gate charge minimizes driver power and enables efficient 500 kHz+ switching
R_thJC	1.0 °C/W (typ.) - Enables direct heatsinking via exposed drain pad for >80 W power dissipation capability
V_GS(th)	0.6–1.6 V - Ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers
t_rr	45–70 ns - Reduces body diode conduction loss and EMI in synchronous rectifier applications

Pinout & Package

SI7380ADP-T1-E3 is housed in a leadless PowerPAK® SO-8 package (6.15 mm × 5.15 mm, 1.07 mm height) with exposed copper drain terminals on the bottom for enhanced thermal conduction. The package is RoHS-compliant and halogen-free (also available as Si7380ADP-T1-GE3).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Common source connection; electrically tied internally and externally for low-inductance return path
5, 6, 7, 8	Drain (D)	Exposed copper drain pad and top-side terminals; primary heat transfer path to PCB ground plane
G (Gate)	Control terminal	Single-pin gate input (Pin 3 per bottom view); requires <1.5 Ω gate resistance to damp ringing in high-dI/dt applications

Key Features

Feature	Design Value
TrenchFET® Power MOSFET architecture	Delivers ultra-low R_DS(on) with minimal gate charge trade-off, enabling >95 % efficiency in 12 V → 1.2 V buck stages
PWM-optimized dynamic parameters	Q_gd/Q_g ratio of ~0.044 ensures clean Miller plateau transition and robust noise immunity in pulse-width modulated circuits
100 % R_g tested	Guarantees gate resistance between 0.5–1.5 Ω, eliminating variability in rise/fall time and reducing design margin requirements
PowerPAK SO-8 thermal design	Low 1.07 mm profile with exposed drain pad achieves 1.0 °C/W junction-to-case resistance-critical for thermally constrained server VRMs

Applications

Desktop CPU VRM Low-Side Switch	Server DDR Memory Regulator Synchronous Rectifier
Use Scenario: High-current, multi-phase buck converter supplying core voltage to Intel/AMD CPUs with >300 A peak demand. IC Role / Device Role / Timing Role: Low-side MOSFET conducting during the freewheeling interval; switched at 300–600 kHz with precise dead-time control. Use Value: 3 mΩ R_DS(on) and 54 nC Q_g reduce conduction and switching losses simultaneously, enabling higher phase count density without thermal derating.	Use Scenario: Point-of-load regulator delivering 1.2 V/60 A to DDR4/DDR5 memory subsystems in cloud data center servers. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diodes; driven complementary to primary-side switch. Use Value: Body diode t_rr ≤ 70 ns and Q_rr ≤ 80 nC minimize reverse recovery spikes and EMI, improving signal integrity on high-speed memory buses.
Industrial PLC Power Module Output Stage	Telecom Base Station Intermediate Bus Converter
Use Scenario: 24 V input, 5 V/20 A output DC/DC module powering I/O controllers and fieldbus interfaces in harsh industrial environments. IC Role / Device Role / Timing Role: Low-side switch in synchronous buck topology operating continuously at full load with ambient up to 70 °C. Use Value: R_thJA = 18 °C/W (t ≤ 10 s) and -55 °C to +150 °C operating range ensure reliability over extended thermal cycles and wide ambient swings.	Use Scenario: 48 V intermediate bus converter stepping down to 12 V for RF power amplifier bias rails in macrocell base stations. IC Role / Device Role / Timing Role: High-current synchronous rectifier in non-isolated buck stage, switching at 200–400 kHz with tight duty cycle control. Use Value: 40 A continuous current rating and 0.0035 Ω R_DS(on) @ 4.5 V enable use with 3.3 V gate drivers-reducing driver complexity and component count.

Desktop CPU VRM Low-Side Switch

Server DDR Memory Regulator Synchronous Rectifier

Use Scenario: High-current, multi-phase buck converter supplying core voltage to Intel/AMD CPUs with >300 A peak demand.

IC Role / Device Role / Timing Role: Low-side MOSFET conducting during the freewheeling interval; switched at 300–600 kHz with precise dead-time control.

Use Value: 3 mΩ R_DS(on) and 54 nC Q_g reduce conduction and switching losses simultaneously, enabling higher phase count density without thermal derating.

Use Scenario: Point-of-load regulator delivering 1.2 V/60 A to DDR4/DDR5 memory subsystems in cloud data center servers.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diodes; driven complementary to primary-side switch.

Use Value: Body diode t_rr ≤ 70 ns and Q_rr ≤ 80 nC minimize reverse recovery spikes and EMI, improving signal integrity on high-speed memory buses.

Industrial PLC Power Module Output Stage

Telecom Base Station Intermediate Bus Converter

Use Scenario: 24 V input, 5 V/20 A output DC/DC module powering I/O controllers and fieldbus interfaces in harsh industrial environments.

IC Role / Device Role / Timing Role: Low-side switch in synchronous buck topology operating continuously at full load with ambient up to 70 °C.

Use Value: R_thJA = 18 °C/W (t ≤ 10 s) and -55 °C to +150 °C operating range ensure reliability over extended thermal cycles and wide ambient swings.

Use Scenario: 48 V intermediate bus converter stepping down to 12 V for RF power amplifier bias rails in macrocell base stations.

IC Role / Device Role / Timing Role: High-current synchronous rectifier in non-isolated buck stage, switching at 200–400 kHz with tight duty cycle control.

Use Value: 40 A continuous current rating and 0.0035 Ω R_DS(on) @ 4.5 V enable use with 3.3 V gate drivers-reducing driver complexity and component count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 3.2 mΩ @ 10 V; Q_g = 62 nC; TO-252 package; R_thJC = 2.0 °C/W	Higher thermal resistance limits power density; unsuitable for ultra-thin VRM modules	Prefer when board-level heatsinking is impractical and TO-252 footprint is already allocated
DMT6009LSD-13	R_DS(on) = 3.0 mΩ @ 10 V; Q_g = 48 nC; PowerPAK 1212-8 package; R_thJC = 1.2 °C/W	Smaller footprint (3.1 × 3.1 mm) but lower current rating (30 A); less robust body diode (t_rr = 95 ns)	Prefer for space-constrained designs where 30 A suffices and layout area is premium

Compared with IRF7470PBF and DMT6009LSD-13, SI7380ADP-T1-E3 offers the lowest R_thJC and highest continuous current in a thermally optimized PowerPAK SO-8, making it the preferred choice for high-power-density, high-reliability synchronous buck and rectifier applications demanding >40 A capability.

Availability

SI7380ADP-T1-E3 is available at Aetrix Electronics and suitable for desktop CPU VRMs, server memory regulators, and industrial PLC power modules requiring stable component supply, long-term lifecycle support, and traceable Pb-free sourcing.

Supply support for SI7380ADP-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The Si7380ADP product line targets high-current, high-frequency power conversion applications-specifically engineered for low-side switching and synchronous rectification in next-generation computing and telecom power supplies.

FAQ

What is the maximum continuous drain current rating for SI7380ADP-T1-E3 at 70 °C case temperature?

The SI7380ADP-T1-E3 supports 32 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal constraints of the PowerPAK SO-8 package under sustained high-power operation and must be verified against actual board-level thermal performance using the provided R_thJC = 1.0 °C/W value in system-level simulations.

Does SI7380ADP-T1-E3 require a gate resistor for stable switching in a 500 kHz synchronous buck converter?

Yes, SI7380ADP-T1-E3 benefits from an external gate resistor-typically 1–2 Ω-to control dV/dt and suppress ringing caused by parasitic inductance. The datasheet specifies R_g = 0.5–1.5 Ω (100 % tested), and using a 1.5 Ω resistor with a 3.3 V gate driver ensures clean turn-on/turn-off transitions while maintaining <25 ns rise time in a 500 kHz application.

Can SI7380ADP-T1-E3 be used as a replacement for a Schottky diode in a 48 V to 12 V synchronous rectifier?

Yes, SI7380ADP-T1-E3 is explicitly qualified for secondary-side synchronous rectification, including 48 V to 12 V converters. Its 30 V V_DS, 40 A continuous current, and 45–70 ns body diode t_rr make it suitable for this role-provided gate drive timing avoids shoot-through and the layout minimizes source inductance to preserve low R_DS(on) performance.

What is the gate-source leakage current specification for SI7380ADP-T1-E3 at ±12 V?

The gate-source leakage current (I_GSS) for SI7380ADP-T1-E3 is ±100 nA at V_GS = ±12 V and T_J = 25 °C, per the Static Electrical Characteristics table. This low leakage ensures minimal quiescent power draw in always-on gate drive circuits and supports stable biasing in high-impedance control networks.

Is SI7380ADP-T1-E3 compatible with lead-free reflow soldering profiles?

Yes, SI7380ADP-T1-E3 is rated for peak reflow temperatures up to 260 °C per the JEDEC J-STD-020 standard, as confirmed in the Soldering Recommendations section. The PowerPAK SO-8 package is designed for lead-free assembly, though manual soldering with an iron is not recommended due to its leadless construction and exposed copper terminations.

SI7380ADP-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 1.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 185 nC @ 10 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 7785 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 5.4W (Ta), 83W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7380ADP-T1-E3 FAQ

1.How can I place an order for SI7380ADP-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7380ADP-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7380ADP-T1-E3 reliable?

The price and inventory of SI7380ADP-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7380ADP-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI7380ADP-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7380ADP-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7380ADP-T1-E3?

SI7380ADP-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7380ADP-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7380ADP-T1-E3?

For technical support, including SI7380ADP-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7380ADP-T1-E3 requirements.

6.How does Aetrix verify that SI7380ADP-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI7380ADP-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7380ADP-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI7380ADP-T1-E3?

All SI7380ADP-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7380ADP-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7380ADP-T1-E3 part is unused and in its original packaging.

Return procedure for SI7380ADP-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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