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Vishay Siliconix SI7380ADP-T1-GE3
- Part No.:
- SI7380ADP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SI7380ADP-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 40A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:4,731
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Product details
Overview
SI7380ADP-T1-GE3 from Vishay Siliconix is a N-channel 30-V (D-S) TrenchFET® Power MOSFET in PowerPAK SO-8 package, optimized for PWM switching in DC/DC converters. It delivers RDS(on) = 0.003 Ω at VGS = 10 V, 40 A continuous drain current at TC = 25 °C, and 54 nC total gate charge - enabling high-efficiency low-side synchronous buck operation in desktop power supplies.
For engineers reviewing the SI7380ADP-T1-GE3 datasheet, SI7380ADP-T1-GE3 pinout, SI7380ADP-T1-GE3 application, or SI7380ADP-T1-GE3 equivalent, key selection criteria include its 30-V VDS, 1.07-mm low-profile PowerPAK SO-8 thermal performance, 100% Rg tested gate resistance, and halogen-free compliance for industrial and computing power stages.
Technical Context
This MOSFET uses trench-gate silicon technology to achieve low on-resistance with fast switching dynamics. Its gate charge profile (Qg = 54 nC at 4.5 V, Qgd = 8 nC) supports efficient hard-switched and synchronous rectifier topologies, while body diode trr = 45–70 ns enables reliable reverse recovery in secondary-side applications.
The device operates across –55 °C to +150 °C junction temperature range and features guaranteed VGS(th) = 0.6–1.6 V, RthJC = 1.0–1.5 °C/W, and 100% Rg testing - ensuring consistent gate drive timing and thermal predictability in high-current, thermally constrained PCB layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage for low-voltage DC/DC primary or secondary-side switching |
| RDS(on) | 0.003 Ω at VGS = 10 V - Enables <1 W conduction loss at 20 A, critical for high-current power stages |
| ID (continuous) | 40 A at TC = 25 °C - Supports high-power density designs without forced airflow |
| Qg | 54 nC at VGS = 4.5 V - Low gate drive energy reduces controller loading and improves efficiency at 500 kHz+ switching |
| RthJC | 1.0 °C/W typical - Enables direct heatsinking via exposed drain pad for thermal management in compact layouts |
| VGS(th) | 0.6–1.6 V - Ensures robust turn-on with standard 3.3 V or 5 V logic-level gate drivers |
| trr | 45–70 ns - Minimizes body diode switching loss during dead-time in synchronous rectification |
Pinout & Package
SI7380ADP-T1-GE3 is housed in a leadless PowerPAK SO-8 package (6.15 mm × 5.15 mm, 1.07 mm height) with exposed drain copper on the bottom side for thermal conduction. The package has no leads; soldering requires reflow only - manual iron soldering is not recommended.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Common source connection; pins 1–4 are internally tied and used for low-inductance return path |
| 5, 6, 7, 8 | Drain (D) | Power output node; all four drain terminals connect to exposed bottom copper pad for thermal and current handling |
| G (pin 3 of top-side marking) | Gate (G) | Control input; isolated signal terminal requiring <1.5 Ω gate resistance for optimal switching |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® technology | Delivers ultra-low RDS(on) with stable threshold and reduced Miller capacitance for clean switching |
| PowerPAK SO-8 package | 1.07 mm profile and exposed drain pad reduce thermal resistance by >50% vs. standard SO-8 |
| PWM-optimized gate charge | Qgd/Qg ratio of ~0.15 minimizes shoot-through risk and improves duty-cycle control fidelity |
| 100% Rg tested | Ensures gate resistance between 0.5–1.5 Ω - critical for predictable turn-on/turn-off timing in high-frequency designs |
| Halogen-free & RoHS compliant | Meets IPC-4101D/21 and JEDEC J-STD-020 reflow requirements for green manufacturing |
Applications
| Desktop Synchronous Buck Converter | Server VRM Low-Side Switch |
|---|---|
Use Scenario: Primary low-side switch in 12 V input, 1.0–3.3 V output synchronous buck converter for CPU/GPU core power. IC Role / Device Role / Timing Role: Low-side power switch conducting high pulsed current (up to 70 A peak) during PWM on-time; body diode inactive due to synchronous control. Use Value: 0.003 Ω RDS(on) limits conduction loss to <1.2 W at 20 A, enabling >95% efficiency at full load without heatsink. | Use Scenario: Secondary-side synchronous rectifier in isolated DC/DC module supplying ASIC/FPGA I/O rails. IC Role / Device Role / Timing Role: Reverse-biased body diode conducts during transformer reset; actively switched during forward conduction to replace Schottky. Use Value: 45–70 ns trr and 0.68–1.1 V VSD reduce switching loss by >40% vs. discrete Schottky in 300–600 kHz operation. |
| Industrial DC/DC Module | Telecom Point-of-Load Regulator |
Use Scenario: High-current (≥30 A) non-isolated buck regulator in programmable logic controller (PLC) power subsystem. IC Role / Device Role / Timing Role: Main power switch operating at 250–500 kHz with 30 V input and 5–12 V output; thermally managed via PCB copper pour. Use Value: RthJC = 1.0 °C/W allows direct thermal coupling to inner-layer copper, maintaining TJ < 125 °C at full load in 70 °C ambient. | Use Scenario: Compact 48 V-to-12 V intermediate bus converter in telecom line card with strict board area constraints. IC Role / Device Role / Timing Role: Low-side FET in two-phase interleaved buck; gate driven by dedicated half-bridge controller with 4.5 V logic. Use Value: Qg = 54 nC at 4.5 V ensures minimal gate driver power dissipation (<150 mW per phase), preserving system efficiency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 30-V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLHS6342TRPBF | RDS(on) = 0.0027 Ω @ 4.5 V, but Qg = 62 nC and RthJC = 1.6 °C/W | Slightly lower on-resistance but higher gate charge and thermal resistance - less suitable for >500 kHz or thermally dense layouts | Prefer SI7380ADP-T1-GE3 when gate drive capability is limited or board-level thermal resistance exceeds 2.5 °C/W |
| DMTH3006LPS-13 | RDS(on) = 0.0032 Ω @ 4.5 V, Qg = 48 nC, PowerFLAT 5×6 package with RthJC = 1.2 °C/W | Lower Qg improves high-frequency efficiency, but smaller 5×6 footprint offers less copper area for thermal spreading | Choose SI7380ADP-T1-GE3 where PCB copper area is available and thermal margin is prioritized over minimal footprint |
Compared with IRLHS6342TRPBF and DMTH3006LPS-13, SI7380ADP-T1-GE3 provides the best balance of low RDS(on), moderate Qg, and lowest RthJC in a widely supported SO-8–compatible footprint - making it optimal for high-current, thermally demanding 30 V power stages where reliability and manufacturability are critical.
Availability
SI7380ADP-T1-GE3 is available at Aetrix Electronics and suitable for desktop power supplies, server VRMs, and industrial DC/DC modules requiring stable component supply, halogen-free compliance, and proven thermal performance in high-current switching applications.
Supply support for SI7380ADP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.
The Si7380ADP product line is engineered for high-current, high-frequency DC/DC conversion - targeting low-side switching and synchronous rectification in computing, telecom, and industrial power systems where thermal performance and gate drive simplicity are essential.
FAQ
What is the maximum continuous drain current rating for SI7380ADP-T1-GE3 at 70 °C case temperature?
The SI7380ADP-T1-GE3 supports 32 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations under steady-state conduction, and must be validated against actual PCB layout and ambient conditions. The SI7380ADP-T1-GE3 datasheet confirms this value applies to the exact part number with PowerPAK SO-8 packaging and standard FR4 mounting.
Does SI7380ADP-T1-GE3 support 3.3 V gate drive in logic-level applications?
Yes, SI7380ADP-T1-GE3 is fully compatible with 3.3 V gate drive: its VGS(th) is specified from 0.6 V to 1.6 V, and RDS(on) = 0.0035 Ω is guaranteed at VGS = 4.5 V - well within 3.3 V logic swing margins. The SI7380ADP-T1-GE3 achieves usable on-state resistance even at 3.3 V, though full 0.003 Ω performance requires ≥4.5 V.
What is the thermal resistance from junction to case (RthJC) for SI7380ADP-T1-GE3?
The SI7380ADP-T1-GE3 has a typical junction-to-case thermal resistance of 1.0 °C/W and a maximum of 1.5 °C/W, measured from die junction to the exposed drain pad. This value is confirmed in the Thermal Resistance Ratings table of the official Vishay datasheet (Document Number: 73408), and applies directly to the SI7380ADP-T1-GE3 halogen-free variant.
Can SI7380ADP-T1-GE3 be used as a synchronous rectifier in flyback or LLC topologies?
Yes, SI7380ADP-T1-GE3 is qualified for synchronous rectification in flyback and LLC converters: its body diode exhibits trr = 45–70 ns and VSD = 0.68–1.1 V at IS = 5 A, enabling efficient replacement of Schottky diodes up to 600 kHz. The SI7380ADP-T1-GE3 datasheet explicitly lists "Secondary Synchronous Rectifier" among its intended applications.
Is SI7380ADP-T1-GE3 pin-compatible with standard SO-8 MOSFETs?
No - SI7380ADP-T1-GE3 uses the leadless PowerPAK SO-8 package, which shares the same 6.15 mm × 5.15 mm outline and pin numbering as standard SO-8 but has no gull-wing leads; instead, it features an exposed drain pad on the bottom. Layouts must accommodate solder paste stencil design and reflow-only assembly. The SI7380ADP-T1-GE3 pinout matches PowerPAK SO-8 mechanical drawings, not legacy SO-8 footprints.
SI7380ADP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 185 nC @ 10 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 7785 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5.4W (Ta), 83W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SI7380ADP-T1-GE3 FAQ
1.How can I place an order for SI7380ADP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7380ADP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7380ADP-T1-GE3 reliable?
The price and inventory of SI7380ADP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7380ADP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7380ADP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7380ADP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7380ADP-T1-GE3?
SI7380ADP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7380ADP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7380ADP-T1-GE3?
For technical support, including SI7380ADP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7380ADP-T1-GE3 requirements.
6.How does Aetrix verify that SI7380ADP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7380ADP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7380ADP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7380ADP-T1-GE3?
All SI7380ADP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7380ADP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7380ADP-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7380ADP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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