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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7382DP-T1-E3

Name: SI7382DP-T1-E3
Brand: Vishay Siliconix
SKU: SI7382DP-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7382DP-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7382DP-T1-E3.pdf

Description:: MOSFET N-CH 30V 14A PPAK SO-8

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Product details

Overview

SI7382DP-T1-E3 from Vishay Siliconix is an N-channel enhancement-mode Power MOSFET in PowerPAK® SO-8 package, optimized for low-side DC/DC conversion with 30 V V_DS, 4.7 mΩ R_DS(on) at V_GS = 10 V, and 24 A continuous drain current - deployed in notebook, server, and workstation power stages.

For engineers reviewing the SI7382DP-T1-E3 datasheet, SI7382DP-T1-E3 pinout, SI7382DP-T1-E3 application, or SI7382DP-T1-E3 equivalent, key selection criteria include ultra-low on-resistance, Q_g-optimized switching, thermal performance matching DPAK, lead-free compliance, and compatibility with standard SO-8 PCB footprints.

Technical Context

This MOSFET uses Vishay's High-Density TrenchFET® Gen II technology to achieve 4.7 mΩ R_DS(on) at 10 V gate drive and 6.2 mΩ at 4.5 V, enabling high-efficiency synchronous rectification in POL converters. Its gate threshold voltage (1.3–3.0 V) supports logic-level and 5 V gate drivers.

The PowerPAK SO-8 package features exposed drain pads on the bottom surface, delivering 1.8 °C/W typical junction-to-case thermal resistance and 20–25 °C/W junction-to-ambient (t ≤ 10 s), enabling higher power density than standard SO-8 while maintaining identical footprint and pinout.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 12 V input rail systems with margin.
R_DS(on) @ V_GS = 10 V	4.7 mΩ - Enables <1 W conduction loss at 24 A, critical for high-current low-voltage output stages.
R_DS(on) @ V_GS = 4.5 V	6.2 mΩ - Ensures robust operation with 5 V gate drivers and maintains efficiency in partial-gate-drive conditions.
Q_g	27–40 nC - Low total gate charge reduces driver power loss and enables fast switching up to ~1 MHz.
I_D (continuous, T_J = 150 °C)	24 A - Sustained current capability at elevated junction temperature for thermally constrained designs.
R_thJC	1.8 °C/W (typ.) - Thermal path from die to exposed drain pad enables direct heat transfer to PCB copper, matching DPAK performance.
V_GS(th)	1.3–3.0 V - Threshold range ensures reliable turn-on with standard logic-level drivers and avoids false triggering.

Pinout & Package

SI7382DP-T1-E3 is housed in a leadless PowerPAK® SO-8 package (6.15 mm × 5.15 mm × 1.07 mm), featuring an exposed drain pad on the bottom surface for enhanced thermal conduction. It shares the same footprint and pinout as standard SO-8, enabling drop-in replacement without PCB redesign.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts 0–20 V gate drive; 0.47–1.43 Ω gate resistance aids EMI control and dV/dt management.
2 (S)	Source	Reference node for gate drive; tied to power ground in low-side switch configuration.
3 (S)	Source	Second source connection; paralleled with Pin 2 to reduce source inductance and improve current sharing.
4 (S)	Source	Third source connection; further lowers source loop inductance for high di/dt applications like POL converters.
5 (D)	Drain	Main power output terminal; connected to exposed bottom pad for thermal and current conduction.
6 (D)	Drain	Second drain connection; electrically and thermally tied to Pin 5 and bottom pad.
7 (D)	Drain	Third drain connection; increases current-carrying capacity and improves thermal spreading across PCB copper.
8 (D)	Drain	Fourth drain connection; completes quad-drain layout for minimal R_DS(on) and optimal thermal dissipation.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	4.7 mΩ @ 10 V enables >95 % efficiency in 5 V/20 A buck stages with minimal thermal derating.
Q_g-optimized design	27–40 nC total gate charge allows fast turn-on/off with low gate driver power consumption and reduced switching loss.
PowerPAK® SO-8 package	1.07 mm profile and exposed drain pad deliver DPAK-equivalent thermal resistance (1.8 °C/W) in SO-8 footprint.
100 % R_g tested	Guaranteed gate resistance (0.47–1.43 Ω) ensures consistent switching behavior and predictable EMI signature.
Lead (Pb)-free and RoHS compliant	T1-E3 suffix denotes lead-free termination compatible with IPC-J-STD-020 reflow profiles up to 255 °C peak.

Applications

Server VRM Output Stage	Notebook CPU Core Supply
Use Scenario: High-current, high-frequency buck converter supplying 1.0–1.3 V to multi-core Xeon processors with dynamic load steps up to 100 A/µs. IC Role / Device Role: Low-side synchronous rectifier in dual-phase interleaved topology. Use Value: 4.7 mΩ R_DS(on) minimizes conduction loss at 40 A per phase; PowerPAK thermal performance keeps T_J < 115 °C under full load.	Use Scenario: Compact 3-phase core regulator powering Intel Core i7/i9 CPUs in ultrabooks with strict height (<1.2 mm) and thermal constraints. IC Role / Device Role: Low-side switch in 500 kHz–1 MHz buck stage with 3.3 V or 5 V input. Use Value: 1.07 mm profile fits thin form factors; 6.2 mΩ R_DS(on) at 4.5 V ensures full efficiency with 5 V gate drivers.
Workstation POL Module	GPU Memory Rail Converter
Use Scenario: Point-of-load converter delivering 0.8–1.2 V at up to 60 A to FPGA or ASIC in industrial workstations with ambient up to 70 °C. IC Role / Device Role: Secondary-side switch in multiphase buck with external PWM controller. Use Value: 24 A continuous rating and 56 °C/W steady-state R_thJA allow stable operation without forced air cooling.	Use Scenario: High-density 3-phase converter for GDDR6 memory rails (1.35 V, 45 A) in AI accelerators where board space is limited. IC Role / Device Role: Low-side MOSFET in compact 12 mm × 12 mm module with integrated inductor. Use Value: Quad-drain layout and exposed pad enable >3 W power dissipation in 100 mm² footprint; Q_g optimization supports 1.2 MHz switching.

Server VRM Output Stage

Notebook CPU Core Supply

Use Scenario: High-current, high-frequency buck converter supplying 1.0–1.3 V to multi-core Xeon processors with dynamic load steps up to 100 A/µs.

IC Role / Device Role: Low-side synchronous rectifier in dual-phase interleaved topology.

Use Value: 4.7 mΩ R_DS(on) minimizes conduction loss at 40 A per phase; PowerPAK thermal performance keeps T_J < 115 °C under full load.

Use Scenario: Compact 3-phase core regulator powering Intel Core i7/i9 CPUs in ultrabooks with strict height (<1.2 mm) and thermal constraints.

IC Role / Device Role: Low-side switch in 500 kHz–1 MHz buck stage with 3.3 V or 5 V input.

Use Value: 1.07 mm profile fits thin form factors; 6.2 mΩ R_DS(on) at 4.5 V ensures full efficiency with 5 V gate drivers.

Workstation POL Module

GPU Memory Rail Converter

Use Scenario: Point-of-load converter delivering 0.8–1.2 V at up to 60 A to FPGA or ASIC in industrial workstations with ambient up to 70 °C.

IC Role / Device Role: Secondary-side switch in multiphase buck with external PWM controller.

Use Value: 24 A continuous rating and 56 °C/W steady-state R_thJA allow stable operation without forced air cooling.

Use Scenario: High-density 3-phase converter for GDDR6 memory rails (1.35 V, 45 A) in AI accelerators where board space is limited.

IC Role / Device Role: Low-side MOSFET in compact 12 mm × 12 mm module with integrated inductor.

Use Value: Quad-drain layout and exposed pad enable >3 W power dissipation in 100 mm² footprint; Q_g optimization supports 1.2 MHz switching.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7850DP-T1-E3	30 V, 3.3 mΩ @ 10 V, 30 A ID, higher Q_g (52 nC), same PowerPAK SO-8 package	Better conduction loss but slower switching; suited for lower-frequency, higher-current VRMs	Select Si7850DP-T1-E3 when R_DS(on) priority outweighs switching speed; verify gate driver capability for 52 nC Q_g.
IRLHS6342TRPBF	30 V, 5.2 mΩ @ 10 V, 22 A ID, SO-8 package (not PowerPAK), higher R_thJA (60 °C/W)	Limited thermal headroom; requires larger copper area or airflow for same current	Choose IRLHS6342TRPBF only if legacy SO-8 land pattern must be reused without thermal pad modification.

Compared with SI7382DP-T1-E3, Si7850DP-T1-E3 delivers lower conduction loss but demands more gate drive energy, while IRLHS6342TRPBF sacrifices thermal performance for broader distributor availability - SI7382DP-T1-E3 balances R_DS(on), Q_g, and thermal capability in a production-validated package.

Availability

SI7382DP-T1-E3 is available at Aetrix Electronics and suitable for notebook CPU core supplies, server VRMs, and workstation POL modules requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for SI7382DP-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency solutions for computing and industrial markets.

The Si7382DP belongs to Vishay's PowerPAK® SO-8 trench MOSFET family, engineered specifically for high-current, high-frequency DC/DC conversion in space-constrained computing power supplies.

FAQ

What is the maximum continuous drain current for SI7382DP-T1-E3 at 70 °C ambient?

The SI7382DP-T1-E3 supports 19 A continuous drain current at T_A = 70 °C (T_J = 150 °C), as specified in its Absolute Maximum Ratings table. This rating assumes proper PCB copper area for thermal dissipation - using ≥1 in² of 2 oz copper on the drain pad sustains this current without exceeding junction temperature limits. The SI7382DP-T1-E3 datasheet confirms this value under "Continuous Drain Current (T_J = 150 °C)" with ambient derating.

Is SI7382DP-T1-E3 pin-compatible with standard SO-8 MOSFETs?

Yes, SI7382DP-T1-E3 is fully pin-compatible with standard SO-8 packages: it uses identical 1.27 mm pitch, 6.15 mm × 5.15 mm outline, and pin 1–8 assignment (G-S-S-S-D-D-D-D). Vishay explicitly states in AN821 that PowerPAK SO-8 "can be substituted directly for a standard SO-8 package." However, the exposed drain pad on the bottom requires appropriate solder paste stencil and thermal pad layout - the SI7382DP-T1-E3 footprint must include a large copper pour connected to the drain net.

What is the gate threshold voltage range for SI7382DP-T1-E3?

The SI7382DP-T1-E3 has a gate threshold voltage (V_GS(th)) range of 1.3 V to 3.0 V, measured at V_DS = V_GS and I_D = 250 µA. This range ensures reliable turn-on with 3.3 V and 5 V logic-level drivers while preventing spurious conduction due to noise. The SI7382DP-T1-E3 specification sheet lists this under "MOSFET Specifications" with test conditions clearly defined.

Does SI7382DP-T1-E3 support 4.5 V gate drive in production designs?

Yes, SI7382DP-T1-E3 is fully characterized and rated for 4.5 V gate drive: its R_DS(on) is guaranteed at 6.2 mΩ max at V_GS = 4.5 V and I_D = 21 A. This makes it suitable for 5 V gate driver ICs and microcontroller GPIOs without level-shifting. The SI7382DP-T1-E3 datasheet provides both 10 V and 4.5 V R_DS(on) values in the Product Summary and Electrical Characteristics tables.

What is the recommended reflow profile for SI7382DP-T1-E3?

The SI7382DP-T1-E3 requires a lead-free reflow profile with peak temperature of 255 °C ± 0 °C, time above 217 °C between 60–150 s, and ramp-down rate ≤6 °C/s. Vishay document 73257 specifies this exact profile; the SI7382DP-T1-E3 is qualified to JEDEC J-STD-020 standards. Deviation risks voiding warranty and compromising solder joint integrity on the exposed drain pad.

SI7382DP-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.7mOhm @ 24A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.8W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7382DP-T1-E3 FAQ

1.How can I place an order for SI7382DP-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7382DP-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7382DP-T1-E3 reliable?

The price and inventory of SI7382DP-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7382DP-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI7382DP-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7382DP-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7382DP-T1-E3?

SI7382DP-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7382DP-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7382DP-T1-E3?

For technical support, including SI7382DP-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7382DP-T1-E3 requirements.

6.How does Aetrix verify that SI7382DP-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI7382DP-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7382DP-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI7382DP-T1-E3?

All SI7382DP-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7382DP-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7382DP-T1-E3 part is unused and in its original packaging.

Return procedure for SI7382DP-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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