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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7382DP-T1-GE3

Name: SI7382DP-T1-GE3
Brand: Vishay Siliconix
SKU: SI7382DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7382DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7382DP-T1-GE3.pdf

Description:: MOSFET N-CH 30V 14A PPAK SO-8

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Product details

Overview

SI7382DP-T1-GE3 from Vishay Siliconix is an N-channel enhancement-mode MOSFET optimized for low-side synchronous rectification in DC/DC converters, featuring 30 V V_DS, 4.7 mΩ R_DS(on) at V_GS = 10 V, and 24 A continuous drain current at T_J = 150 °C - deployed in notebook, server, and workstation power stages.

For engineers reviewing the SI7382DP-T1-GE3 datasheet, SI7382DP-T1-GE3 pinout, SI7382DP-T1-GE3 application, or SI7382DP-T1-GE3 equivalent, key selection criteria include its PowerPAK® SO-8 package thermal performance (R_thJC = 1.8 °C/W), ultra-low gate charge (Q_g = 27–40 nC), and halogen-free, lead-free compliance per ordering code.

Technical Context

This MOSFET employs Vishay's TrenchFET® Gen II technology to achieve ultra-low on-resistance and fast switching with reduced Q_g. Its gate threshold voltage (V_GS(th) = 1.3–3.0 V) supports 4.5 V logic-level drive, while its body diode exhibits V_SD = 0.70–1.1 V at I_S = 3 A and zero gate bias.

The device operates within -55 °C to +150 °C junction temperature range and is rated for 30 V drain-source voltage with ±20 V gate-source voltage tolerance. Its safe operating area (SOA) supports pulsed drain currents up to ±50 A and single-pulse avalanche energy of 45 mJ at I_AS = 30 A.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - maximum blocking voltage in low-voltage power rails (e.g., 12 V input, 5/3.3/1.8 V output)
R_DS(on) @ V_GS = 10 V	4.7 mΩ - enables <1 W conduction loss at 24 A, critical for high-efficiency POL converters
R_DS(on) @ V_GS = 4.5 V	6.2 mΩ - ensures robust operation with 5 V or 4.5 V gate drive in synchronous buck topologies
Q_g	27–40 nC - low total gate charge reduces drive power and switching losses in high-frequency (>500 kHz) designs
R_thJC	1.8 °C/W (typ.) - direct die-to-case thermal path enables efficient heat transfer to PCB copper in PowerPAK® SO-8
I_D (continuous, T_A = 25 °C)	24 A - supports high-current point-of-load applications without forced airflow
V_GS(th)	1.3–3.0 V - compatible with standard PWM controller gate drivers and logic-level signals

Pinout & Package

SI7382DP-T1-GE3 is housed in a leadless PowerPAK® SO-8 package (6.15 mm × 5.15 mm, 1.07 mm profile), matching the footprint and pinout of standard SO-8 but with enhanced thermal performance via exposed drain pads on the bottom surface.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 8	Drain (D)	High-current output node; electrically and thermally connected to bottom-side exposed copper pad
4	Gate (G)	Control terminal; requires low-impedance drive due to Q_g = 27–40 nC and R_g = 0.47–1.43 Ω
5, 6, 7	Source (S)	Return path for load current; tied to power ground plane; forms cathode of integrated body diode

Key Features

Feature	Design Value
Ultra-low R_DS(on)	4.7 mΩ @ 10 V enables <0.3 W conduction loss at 12 A, improving efficiency in compact DC/DC modules
Optimized Q_g	27–40 nC minimizes gate drive power and enables faster turn-on/turn-off transitions in high-frequency converters
PowerPAK® SO-8 package	1.07 mm height and DPAK-equivalent R_thJC (1.8 °C/W) allow space-constrained, thermally demanding layouts
100 % R_g tested	Guarantees consistent gate resistance (0.47–1.43 Ω), critical for predictable switching timing and EMI control
Halogen-free & RoHS-compliant	Meets IPC-4101D/21 and JEDEC J-STD-609A Class 1 requirements for environmentally sensitive end equipment

Applications

Server VRM	Notebook CPU Core Supply
Use Scenario: High-current, multi-phase buck converter delivering up to 120 A to Xeon or EPYC processors. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switching at 300–600 kHz with tight dead-time control. Use Value: 4.7 mΩ R_DS(on) and 1.8 °C/W R_thJC reduce conduction loss and junction temperature rise, enabling higher current density without derating.	Use Scenario: Compact 2–4 phase buck regulator powering Intel Core i7/i9 or AMD Ryzen mobile CPUs. IC Role / Device Role / Timing Role: Low-side switch in high-efficiency POL stage operating at ≥500 kHz with 4.5 V gate drive. Use Value: 6.2 mΩ R_DS(on) at 4.5 V ensures stable regulation under transient load steps while minimizing board area.
Workstation GPU Power Rail	Industrial DC/DC Module
Use Scenario: Dual-rail 12 V input → 0.8–1.2 V output converter for NVIDIA RTX or AMD Radeon Pro GPUs. IC Role / Device Role / Timing Role: Synchronous rectifier handling peak currents >60 A per phase in thermally isolated PCB zones. Use Value: Exposed drain pad and low R_thJC enable direct thermal coupling to internal copper planes, sustaining 24 A continuous without heatsinks.	Use Scenario: Isolated or non-isolated 24 V input → 5/3.3 V output module for programmable logic controllers (PLCs). IC Role / Device Role / Timing Role: Low-side FET in fixed-frequency (300–400 kHz) synchronous buck with industrial-grade reliability requirements. Use Value: 150 °C max T_J, 30 V V_DS, and halogen-free construction meet extended-life, wide-temperature industrial deployment needs.

Server VRM

Notebook CPU Core Supply

Use Scenario: High-current, multi-phase buck converter delivering up to 120 A to Xeon or EPYC processors.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switching at 300–600 kHz with tight dead-time control.

Use Value: 4.7 mΩ R_DS(on) and 1.8 °C/W R_thJC reduce conduction loss and junction temperature rise, enabling higher current density without derating.

Use Scenario: Compact 2–4 phase buck regulator powering Intel Core i7/i9 or AMD Ryzen mobile CPUs.

IC Role / Device Role / Timing Role: Low-side switch in high-efficiency POL stage operating at ≥500 kHz with 4.5 V gate drive.

Use Value: 6.2 mΩ R_DS(on) at 4.5 V ensures stable regulation under transient load steps while minimizing board area.

Workstation GPU Power Rail

Industrial DC/DC Module

Use Scenario: Dual-rail 12 V input → 0.8–1.2 V output converter for NVIDIA RTX or AMD Radeon Pro GPUs.

IC Role / Device Role / Timing Role: Synchronous rectifier handling peak currents >60 A per phase in thermally isolated PCB zones.

Use Value: Exposed drain pad and low R_thJC enable direct thermal coupling to internal copper planes, sustaining 24 A continuous without heatsinks.

Use Scenario: Isolated or non-isolated 24 V input → 5/3.3 V output module for programmable logic controllers (PLCs).

IC Role / Device Role / Timing Role: Low-side FET in fixed-frequency (300–400 kHz) synchronous buck with industrial-grade reliability requirements.

Use Value: 150 °C max T_J, 30 V V_DS, and halogen-free construction meet extended-life, wide-temperature industrial deployment needs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7850DP-T1-GE3	30 V, 3.2 mΩ @ 10 V, 30 A ID, higher cost, same PowerPAK® SO-8 package	Better R_DS(on) and current rating; suited for next-gen higher-power VRMs	Select when lower conduction loss at >25 A is required and layout compatibility is retained.
IRF7470PBF	30 V, 5.2 mΩ @ 10 V, 22 A ID, standard SO-8 package, higher R_thJA (56 °C/W)	Larger thermal resistance limits power density; not suitable for compact, high-current designs	Consider only if legacy SO-8 land pattern reuse is mandatory and thermal headroom exists.

Compared with SI7382DP-T1-GE3, Si7850DP-T1-GE3 delivers lower R_DS(on) and higher current capability in identical packaging, while IRF7470PBF trades thermal performance for broader distributor availability in legacy footprints - making SI7382DP-T1-GE3 the optimal balance of efficiency, thermal management, and halogen-free compliance for modern high-density DC/DC designs.

Availability

SI7382DP-T1-GE3 is available at Aetrix Electronics and suitable for notebook, server, and workstation power delivery systems requiring stable component supply, halogen-free compliance, and high-reliability thermal performance.

Supply support for SI7382DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SI7382DP product line is part of Vishay's PowerPAK® SO-8 MOSFET family, engineered specifically for high-current, high-frequency synchronous rectification in computing and communications power supplies.

FAQ

What is the maximum junction temperature rating for SI7382DP-T1-GE3?

The SI7382DP-T1-GE3 has a specified operating junction temperature range of -55 °C to +150 °C. This rating is validated per Vishay's thermal characterization and absolute maximum ratings table, where steady-state power dissipation is limited to 1.8 W at T_A = 70 °C. The 150 °C upper limit ensures reliable operation in thermally dense server and workstation environments when used with appropriate PCB copper area.

Does SI7382DP-T1-GE3 support 4.5 V gate drive in synchronous buck applications?

Yes, SI7382DP-T1-GE3 is fully characterized for 4.5 V gate drive: its R_DS(on) is guaranteed at 6.2 mΩ with I_D = 21 A, and V_GS(th) ranges from 1.3 V to 3.0 V, ensuring strong enhancement-mode turn-on. This makes SI7382DP-T1-GE3 suitable for controllers with 4.5–5 V gate outputs, such as TI UCC28950 or ON Semiconductor NCP3101, without requiring level-shifting circuitry.

What is the thermal resistance from junction to case (R_thJC) for SI7382DP-T1-GE3?

The SI7382DP-T1-GE3 has a typical junction-to-case (drain) thermal resistance of 1.8 °C/W and a maximum of 2.3 °C/W, measured under steady-state conditions. This value reflects the low-thermal-resistance path through the exposed drain pad in the PowerPAK® SO-8 package and is confirmed in Vishay's datasheet Document Number 72580, page 2, Thermal Resistance Ratings table.

Is SI7382DP-T1-GE3 pin-compatible with standard SO-8 MOSFETs?

Yes, SI7382DP-T1-GE3 uses the PowerPAK® SO-8 package, which maintains identical pin count, pin spacing (1.27 mm pitch), and pinout (G-S-S-S-D-D-D-D) as the industry-standard SO-8. Vishay explicitly states in Application Note AN821 that PowerPAK SO-8 devices "can be substituted directly for a standard SO-8 package" - enabling drop-in replacement on existing layouts without PCB redesign.

What does the "-GE3" suffix indicate in SI7382DP-T1-GE3?

The "-GE3" suffix in SI7382DP-T1-GE3 denotes Vishay's halogen-free and lead-free (RoHS-compliant) version, as confirmed in the ordering information section of datasheet 72580. It distinguishes this variant from the "-E3" version (lead-free only), and both share identical electrical specifications, PowerPAK® SO-8 packaging, and thermal performance - with "-GE3" meeting stricter environmental requirements for consumer and computing end equipment.

SI7382DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.7mOhm @ 24A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.8W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7382DP-T1-GE3 FAQ

1.How can I place an order for SI7382DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7382DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7382DP-T1-GE3 reliable?

The price and inventory of SI7382DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7382DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI7382DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7382DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7382DP-T1-GE3?

SI7382DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7382DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7382DP-T1-GE3?

For technical support, including SI7382DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7382DP-T1-GE3 requirements.

6.How does Aetrix verify that SI7382DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI7382DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7382DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI7382DP-T1-GE3?

All SI7382DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7382DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7382DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SI7382DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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