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Vishay Siliconix SI7384DP-T1-E3
- Part No.:
- SI7384DP-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SI7384DP-T1-E3.pdf
- Description:
- MOSFET N-CH 30V 11A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:6,292
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Product details
Overview
SI7384DP-T1-E3 from Vishay Siliconix is an N-channel TrenchFET® Gen II Power MOSFET in PowerPAK® SO-8 package, rated for 30 V VDS, 18 A continuous drain current at TJ = 150 °C, and 8.5 mΩ RDS(on) at VGS = 10 V. It delivers fast switching, low gate charge (12–18 nC), and optimized PWM efficiency for high-side DC/DC conversion in notebook, desktop, and server power supplies.
For engineers reviewing the SI7384DP-T1-E3 datasheet, SI7384DP-T1-E3 pinout, SI7384DP-T1-E3 application, or SI7384DP-T1-E3 equivalent, key selection criteria include its 30 V rating, 8.5 mΩ on-resistance at 10 V drive, 1.07 mm low-profile PowerPAK SO-8 package, thermal resistance of 2.4 °C/W (junction-to-case), and 100 % Rg tested gate resistance specification.
Technical Context
This MOSFET employs TrenchFET® Gen II silicon technology with reduced gate charge (Qg = 12–18 nC) and fast switching dynamics (td(on) = 10–15 ns, tf = 13–20 ns). Its RDS(on) is specified at both 10 V (0.007–0.0085 Ω) and 4.5 V (0.0105–0.0125 Ω), supporting logic-level and standard gate drive.
The device features a monolithic source-drain diode with VSD = 0.78–1.1 V at IS = 4.1 A, and operates across –55 to +150 °C junction temperature range. Its PowerPAK SO-8 package provides DPAK-equivalent thermal performance (RthJC = 2.4 °C/W typ.) in an SO-8 footprint, enabling drop-in replacement in existing layouts without PCB changes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage for high-side synchronous buck stages in 12 V input systems. |
| RDS(on) @ VGS = 10 V | 0.0085 Ω - Enables <1.4 W conduction loss at 18 A, critical for high-efficiency server VRMs. |
| RDS(on) @ VGS = 4.5 V | 0.0125 Ω - Supports direct logic-level drive from PWM controllers without level-shifting. |
| Qg | 12–18 nC - Reduces gate drive power and enables >1 MHz switching in compact DC/DC designs. |
| RthJC | 2.4 °C/W (typ.) - Matches DPAK thermal performance, allowing full 18 A current handling with minimal board copper. |
| ID (continuous) | 18 A @ TJ = 150 °C - Sustains high-current operation in thermally constrained notebook CPU power stages. |
| VGS(th) | 1.0–3.0 V - Ensures reliable turn-on with margin above typical 3.3 V logic thresholds. |
Pinout & Package
SI7384DP-T1-E3 is housed in a leadless PowerPAK® SO-8 package (6.15 mm × 5.15 mm, 1.07 mm height), compatible with standard SO-8 footprints and reflow profiles. The exposed drain pad on the bottom provides low-thermal-resistance path to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires ≤20 V gate-source voltage; 0.8–2.5 Ω gate resistance ensures stable switching. |
| 2 (S) | Source | Reference node for gate drive; tied to power ground in high-side configuration; carries return current for body diode conduction. |
| 3 (S) | Source | Parallel source connection to reduce package inductance and improve current sharing in high-frequency operation. |
| 4 (S) | Source | Third source terminal enhancing thermal and electrical connection to PCB ground plane. |
| 5 (D) | Drain | Main power output node; connected to large copper pour for heat dissipation; electrically tied to exposed bottom pad. |
| 6 (D) | Drain | Second drain terminal improving current capacity and reducing parasitic inductance in high-di/dt applications. |
| 7 (D) | Drain | Third drain terminal supporting high pulsed currents up to 50 A (IDM) in transient load conditions. |
| 8 (D) | Drain | Fourth drain terminal completing low-inductance, high-current path to input capacitor and inductor node. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen II silicon | Delivers 30 % lower RDS(on) vs. prior generation at same die size, enabling higher current density in PowerPAK SO-8. |
| PowerPAK® SO-8 package | Provides DPAK-level thermal resistance (2.4 °C/W) in SO-8 footprint-no layout change needed for upgrade from standard SO-8. |
| PWM-optimized switching | Qgd/Qgs ratio of ~0.68 minimizes Miller-induced shoot-through risk in synchronous rectification. |
| 100 % Rg tested | Guarantees gate resistance between 0.8–2.5 Ω, ensuring consistent turn-on timing and EMI control across production lots. |
| Low 1.07 mm profile | Enables use in ultra-thin notebook power stages where height clearance is limited to <1.2 mm. |
Applications
| High-Side Synchronous Buck Converter | Notebook CPU Core Voltage Regulator |
|---|---|
Use Scenario: Primary high-side switch in 12 V input → 1.0–1.3 V output VRM for Intel/AMD mobile processors. IC Role / Device Role: High-side power switch delivering up to 18 A continuous current with minimal conduction loss. Use Value: 8.5 mΩ RDS(on) at 10 V reduces I²R loss to <2.8 W at full load, directly improving VRM efficiency by ≥1.2 % over 12 mΩ alternatives. |
Use Scenario: Compact, thermally constrained core power stage in sub-15 mm thick ultrabooks. IC Role / Device Role: High-current, low-profile MOSFET mounted on top layer with minimal copper area. Use Value: 1.07 mm height and 2.4 °C/W RthJC allow full 18 A rating without heatsink, eliminating height penalty of DPAK solutions. |
| Server Point-of-Load (POL) Module | Desktop GPU Voltage Regulator |
Use Scenario: High-frequency (500 kHz–1 MHz) POL converter supplying 0.8–1.2 V to server ASICs. IC Role / Device Role: Fast-switching high-side FET with low Qg and controlled dV/dt. Use Value: 12–18 nC total gate charge enables efficient operation at >1 MHz, reducing output filter size by 40 % vs. 30 nC devices. |
Use Scenario: Dual-phase GPU VRM handling peak currents >40 A in gaming desktop motherboards. IC Role / Device Role: Parallel-connected high-side switch with matched RDS(on) and thermal characteristics. Use Value: Tight RDS(on) tolerance (±15 %) and uniform thermal resistance ensure balanced current sharing across paralleled SI7384DP-T1-E3 units. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7850DP-T1-E3 | Same PowerPAK SO-8 package, but 40 V VDS, 5.8 mΩ RDS(on) @ 10 V, higher Qg (29 nC). | Better suited for 19–24 V input systems; less optimal for 12 V high-frequency buck due to higher switching loss. | Select Si7850DP-T1-E3 only when higher voltage rating or lower RDS(on) outweighs increased gate drive burden. |
| IRF7478PBF | Standard SO-8 package, 30 V, 9.5 mΩ @ 10 V, RthJC = 16 °C/W, no 100 % Rg test. | Higher thermal resistance limits continuous current to ~11 A on same PCB; unsuitable for sustained 18 A loads. | IRF7478PBF may be used in cost-sensitive, low-power designs where thermal headroom exists, but not as direct replacement. |
Compared with SI7384DP-T1-E3, Si7850DP-T1-E3 offers higher voltage margin and lower conduction loss but sacrifices switching speed; IRF7478PBF lacks thermal capability and gate consistency, requiring derating and additional validation for equivalent performance.
Availability
SI7384DP-T1-E3 is available at Aetrix Electronics and suitable for notebook CPU VRMs, server point-of-load converters, and desktop GPU voltage regulators requiring stable component supply, long-term lifecycle support, and RoHS-compliant lead-free packaging.
Supply support for SI7384DP-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency silicon solutions.
The Si7384DP belongs to Vishay's TrenchFET® Gen II PowerPAK® SO-8 family, engineered specifically for high-current, high-frequency DC/DC conversion in space-constrained computing and server power applications.
FAQ
What is the maximum continuous drain current rating for SI7384DP-T1-E3 at 70 °C ambient?
The SI7384DP-T1-E3 supports 14 A continuous drain current at TA = 70 °C under standard mounting conditions (1" × 1" FR4 board). This rating assumes proper PCB copper area for thermal dissipation and accounts for derating from the 18 A value at 25 °C ambient. The device's low RthJC of 2.4 °C/W enables this high current capability even in thermally restricted environments.
Does SI7384DP-T1-E3 support 4.5 V gate drive in high-side synchronous buck applications?
Yes, SI7384DP-T1-E3 is fully characterized for 4.5 V gate drive, with RDS(on) = 0.0105–0.0125 Ω at ID = 14 A. This makes it suitable for direct drive from 5 V or 4.5 V PWM controllers without external level shifters, maintaining low conduction loss while simplifying gate drive circuitry in high-side configurations.
What is the significance of "100 % Rg tested" for SI7384DP-T1-E3?
"100 % Rg tested" means every SI7384DP-T1-E3 unit undergoes production testing to verify gate resistance falls within 0.8–2.5 Ω. This ensures consistent turn-on timing, predictable switching behavior, and minimized EMI variation across batches-critical for multi-phase VRMs where gate timing skew affects current balance and efficiency.
Can SI7384DP-T1-E3 be mounted on a standard SO-8 land pattern?
Yes, SI7384DP-T1-E3 uses the exact same footprint and pinout as standard SO-8, enabling direct substitution without PCB redesign. However, to achieve its rated 18 A current and low thermal resistance, Vishay recommends extending the drain pad copper area per Application Note AN821-standard SO-8 patterns will still function but with ~10 °C/W higher RthJA.
What is the avalanche energy rating for SI7384DP-T1-E3, and how is it relevant in DC/DC designs?
The SI7384DP-T1-E3 has a single-pulse avalanche energy rating (EAS) of 32 mJ. This capability allows the device to safely absorb inductive energy during transient overvoltage events-such as MOSFET turn-off with leakage inductance in synchronous buck converters-without failure, enhancing system robustness in high-reliability server and notebook power stages.
SI7384DP-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.5mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SI7384DP-T1-E3 FAQ
1.How can I place an order for SI7384DP-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7384DP-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7384DP-T1-E3 reliable?
The price and inventory of SI7384DP-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7384DP-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI7384DP-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7384DP-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7384DP-T1-E3?
SI7384DP-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7384DP-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7384DP-T1-E3?
For technical support, including SI7384DP-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7384DP-T1-E3 requirements.
6.How does Aetrix verify that SI7384DP-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI7384DP-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7384DP-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI7384DP-T1-E3?
All SI7384DP-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7384DP-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7384DP-T1-E3 part is unused and in its original packaging.
Return procedure for SI7384DP-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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