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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7384DP-T1-GE3

Name: SI7384DP-T1-GE3
Brand: Vishay Siliconix
SKU: SI7384DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7384DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7384DP-T1-GE3.pdf

Description:: MOSFET N-CH 30V 11A PPAK SO-8

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Product details

Overview

SI7384DP-T1-GE3 from Vishay Siliconix is an N-channel TrenchFET® Gen II Power MOSFET in PowerPAK® SO-8 package, rated for 30 V V_DS, 18 A continuous drain current at T_J = 150 °C, and R_DS(on) = 8.5 mΩ at V_GS = 10 V. It features low thermal resistance (R_thJC = 2.4 °C/W), 100 % R_g tested, and is optimized for high-efficiency PWM in high-side DC/DC conversion for notebook, desktop, and server power supplies.

For engineers reviewing the SI7384DP-T1-GE3 datasheet, SI7384DP-T1-GE3 pinout, SI7384DP-T1-GE3 application, or SI7384DP-T1-GE3 equivalent, key selection criteria include its 4.5 V gate drive capability (R_DS(on) = 12.5 mΩ), fast switching performance (Q_g = 18 nC), halogen-free and lead-free compliance, and compatibility with standard SO-8 land patterns while delivering DPAK-level thermal performance.

Technical Context

This MOSFET employs TrenchFET® Gen II silicon technology to achieve reduced gate charge (Q_g = 12–18 nC) and low R_DS(on) across V_GS = 4.5 V and 10 V. Its PowerPAK® SO-8 package integrates an exposed drain pad for direct thermal conduction to the PCB, enabling R_thJA = 21 °C/W (t ≤ 10 s) and R_thJC = 2.4 °C/W (steady state).

The device supports synchronous rectification and high-frequency switching up to several hundred kHz, with diode reverse recovery time (t_rr) of 25–50 ns and forward transconductance (g_fs) of 56 S. It is characterized for operation from –55 °C to +150 °C and qualified per JEDEC standards for industrial reliability.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 12 V input rail applications with margin
R_DS(on) @ V_GS = 10 V	8.5 mΩ - Enables <1.5 W conduction loss at 18 A, critical for high-current CPU/GPU VRMs
R_DS(on) @ V_GS = 4.5 V	12.5 mΩ - Ensures robust operation with 5 V or logic-level gate drivers
Q_g	18 nC - Low total gate charge reduces driver power loss and enables faster turn-on/turn-off
R_thJC	2.4 °C/W - Direct die-to-PCB thermal path allows efficient heat transfer to internal copper planes
I_D (continuous, T_A = 25 °C)	18 A - Supports high-density point-of-load converters without forced air
t_rr	25–50 ns - Minimizes body diode switching loss in synchronous buck topologies

Pinout & Package

SI7384DP-T1-GE3 is housed in a leadless PowerPAK® SO-8 package (6.15 mm × 5.15 mm × 1.07 mm), compatible with standard SO-8 footprints but featuring an exposed drain pad on the bottom for enhanced thermal performance. The package uses a single-die configuration with 8 terminals arranged in dual-row surface-mount layout.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts 0–20 V gate drive; low R_g (0.8–2.5 Ω) minimizes ringing
2 (S)	Source	Reference node for gate drive and current sensing; tied to power ground in high-side switch
3 (S)	Source	Parallel source connection to reduce package inductance and improve current sharing
4 (S)	Source	Third source terminal for low-inductance return path in high-frequency switching
5 (D)	Drain	Main power output node; connected to large exposed copper pad for thermal and electrical conduction
6 (D)	Drain	Second drain terminal enhancing current capacity and reducing thermal gradient
7 (D)	Drain	Third drain terminal supporting high pulsed current (I_DM = ±50 A)
8 (D)	Drain	Fourth drain terminal completing low-resistance, low-inductance power path to input rail

Key Features

Feature	Design Value
TrenchFET® Gen II silicon	Delivers 15 % lower R_DS(on) and 20 % lower Q_g vs. prior generation for improved FOM in high-frequency converters
PowerPAK® SO-8 package	Enables DPAK-equivalent thermal performance (R_thJC = 2.4 °C/W) in SO-8 footprint, eliminating need for larger packages
PWM-optimized switching	Q_gd/Q_gs ratio of ~0.68 ensures clean Miller plateau transition and reduced shoot-through risk
100 % R_g tested	Guarantees gate resistance between 0.8–2.5 Ω, ensuring consistent drive strength and EMI behavior across production lots
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and JEDEC JS709C requirements for environmentally constrained end equipment

Applications

High-Side Synchronous Buck Converter	Notebook CPU Voltage Regulator
Use Scenario: Primary high-side switch in 3-phase VRM supplying core voltage to Intel/AMD processors. IC Role / Device Role / Timing Role: High-side power switch operating at 300–600 kHz with 5 V gate drive from controller IC. Use Value: 8.5 mΩ R_DS(on) at 10 V and 12.5 mΩ at 4.5 V minimize conduction loss; low Q_g enables efficient high-frequency operation.	Use Scenario: Compact, thermally constrained 12 V → 1.2 V converter on thin-and-light notebook motherboard. IC Role / Device Role / Timing Role: High-side MOSFET in dual-phase buck stage, mounted directly over internal ground plane. Use Value: PowerPAK® SO-8's 1.07 mm profile fits tight height budgets; R_thJC = 2.4 °C/W enables >15 A continuous current without heatsink.
Server Point-of-Load Module	Desktop GPU Power Delivery
Use Scenario: High-current POL module powering ASICs/FPGAs in 1U rack servers with limited airflow. IC Role / Device Role / Timing Role: High-side switch in multiphase buck regulator with external PWM controller and current sense. Use Value: 18 A continuous rating and 50 A pulsed capability support transient load steps; low t_rr reduces body diode loss during dead-time.	Use Scenario: Dual-phase 12 V → 0.9 V supply for discrete graphics cards requiring >300 W peak power. IC Role / Device Role / Timing Role: High-side MOSFET paired with low-side counterpart in interleaved buck topology. Use Value: Exposed drain pad allows direct thermal coupling to GPU PCB copper layers, maintaining T_J < 125 °C under full load.

High-Side Synchronous Buck Converter

Notebook CPU Voltage Regulator

Use Scenario: Primary high-side switch in 3-phase VRM supplying core voltage to Intel/AMD processors.

IC Role / Device Role / Timing Role: High-side power switch operating at 300–600 kHz with 5 V gate drive from controller IC.

Use Value: 8.5 mΩ R_DS(on) at 10 V and 12.5 mΩ at 4.5 V minimize conduction loss; low Q_g enables efficient high-frequency operation.

Use Scenario: Compact, thermally constrained 12 V → 1.2 V converter on thin-and-light notebook motherboard.

IC Role / Device Role / Timing Role: High-side MOSFET in dual-phase buck stage, mounted directly over internal ground plane.

Use Value: PowerPAK® SO-8's 1.07 mm profile fits tight height budgets; R_thJC = 2.4 °C/W enables >15 A continuous current without heatsink.

Server Point-of-Load Module

Desktop GPU Power Delivery

Use Scenario: High-current POL module powering ASICs/FPGAs in 1U rack servers with limited airflow.

IC Role / Device Role / Timing Role: High-side switch in multiphase buck regulator with external PWM controller and current sense.

Use Value: 18 A continuous rating and 50 A pulsed capability support transient load steps; low t_rr reduces body diode loss during dead-time.

Use Scenario: Dual-phase 12 V → 0.9 V supply for discrete graphics cards requiring >300 W peak power.

IC Role / Device Role / Timing Role: High-side MOSFET paired with low-side counterpart in interleaved buck topology.

Use Value: Exposed drain pad allows direct thermal coupling to GPU PCB copper layers, maintaining T_J < 125 °C under full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7850DP-T1-GE3	30 V, 22 A, R_DS(on) = 6.0 mΩ @ 10 V; higher current rating but larger Q_g (24 nC)	Better for ultra-high-current (>20 A) VRMs where gate drive capability permits higher Q_g	Select when lower R_DS(on) outweighs increased switching loss and gate driver demand
IRLMS6802TRPBF	30 V, 6.2 A, R_DS(on) = 22 mΩ @ 4.5 V; smaller PowerPAK 1212-8 package, lower current capacity	Suitable for space-constrained, lower-power auxiliary rails (e.g., memory, chipset)	Choose for cost-sensitive, sub-10 A applications where thermal budget is less aggressive

Compared with Si7850DP-T1-GE3, SI7384DP-T1-GE3 offers lower gate charge for faster switching at moderate current, while compared with IRLMS6802TRPBF, it delivers 3× higher current handling and 40 % lower R_DS(on)-making SI7384DP-T1-GE3 optimal for mainstream high-efficiency, high-density buck converters.

Availability

SI7384DP-T1-GE3 is available at Aetrix Electronics and suitable for notebook power delivery, server VRMs, and desktop GPU power stages requiring stable component supply, long-term lifecycle assurance, and halogen-free compliance.

Supply support for SI7384DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The Si7384DP product line belongs to Vishay's TrenchFET® Gen II PowerPAK® portfolio, engineered specifically for high-frequency, high-current DC/DC conversion in computing and communications infrastructure where thermal density and switching loss are critical constraints.

FAQ

What is the maximum junction temperature rating for SI7384DP-T1-GE3?

The SI7384DP-T1-GE3 has an operating junction temperature range of –55 °C to +150 °C, as specified in the Absolute Maximum Ratings table. This rating is validated under steady-state conditions with proper PCB thermal design, including use of the recommended PowerPAK® SO-8 land pattern with spreading copper. Derating applies above 25 °C ambient per the R_thJA curve.

Does SI7384DP-T1-GE3 support 4.5 V gate drive in production systems?

Yes, SI7384DP-T1-GE3 is fully characterized and guaranteed for operation at V_GS = 4.5 V, with R_DS(on) = 12.5 mΩ (max) at I_D = 14 A and T_J = 25 °C. This makes SI7384DP-T1-GE3 suitable for logic-level gate drive in modern controller ICs and eliminates need for level-shifting circuitry in many buck converter designs.

How does the PowerPAK® SO-8 package of SI7384DP-T1-GE3 compare thermally to standard SO-8?

SI7384DP-T1-GE3's PowerPAK® SO-8 delivers R_thJC = 2.4 °C/W (steady state), versus ~16 °C/W for standard SO-8 - a 6.7× improvement. On a typical 4-layer FR-4 board, this reduces junction-to-ambient rise by ~40 °C at 2.7 W dissipation, enabling higher current density without thermal throttling. The exposed drain pad is essential to achieving this performance.

Is SI7384DP-T1-GE3 pin-compatible with standard SO-8 MOSFETs?

Yes, SI7384DP-T1-GE3 uses the same 8-pin dual-row footprint and pinout (G-S-S-S-D-D-D-D) as standard SO-8 packages, allowing drop-in replacement on existing layouts. However, its leadless construction requires adherence to Vishay's reflow profile (peak 255 °C, 60–150 s above 217 °C) and prohibits manual soldering with iron due to thermal mass and solder fillet limitations at exposed copper tips.

What is the avalanche energy rating for SI7384DP-T1-GE3?

SI7384DP-T1-GE3 is rated for single-pulse avalanche energy (E_AS) of 32 mJ under test conditions of L = 0.1 mH, I_AS = 25 A, and V_DD = 30 V. This rating reflects ruggedness against inductive switching transients in buck converters and provides design margin for non-ideal layout or control loop instability events involving the SI7384DP-T1-GE3.

SI7384DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.5mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.8W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7384DP-T1-GE3 FAQ

1.How can I place an order for SI7384DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7384DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7384DP-T1-GE3 reliable?

The price and inventory of SI7384DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7384DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI7384DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7384DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7384DP-T1-GE3?

SI7384DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7384DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7384DP-T1-GE3?

For technical support, including SI7384DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7384DP-T1-GE3 requirements.

6.How does Aetrix verify that SI7384DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI7384DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7384DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI7384DP-T1-GE3?

All SI7384DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7384DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7384DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SI7384DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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