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Vishay Siliconix SI7386DP-T1-GE3
- Part No.:
- SI7386DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SI7386DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 12A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:28,608
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Product details
Overview
SI7386DP-T1-GE3 from Vishay Siliconix is a lead-free and halogen-free N-channel TrenchFET® Gen II Power MOSFET in PowerPAK® SO-8 package, rated for 30 V VDS, 19 A continuous drain current at TJ = 150 °C, 7 mΩ RDS(on) at VGS = 10 V, and optimized for high-efficiency PWM DC/DC conversion in PC power supplies.
For engineers reviewing the SI7386DP-T1-GE3 datasheet, SI7386DP-T1-GE3 pinout, SI7386DP-T1-GE3 application, or SI7386DP-T1-GE3 equivalent, key selection criteria include its low 11.5 nC total gate charge, 2.4 °C/W junction-to-case thermal resistance, 1.07 mm profile, 100% Rg tested specification, and compatibility with standard SO-8 PCB footprints while delivering DPAK-level thermal performance.
Technical Context
This MOSFET employs Vishay's TrenchFET® Gen II process to achieve reduced gate charge (Qg = 11.5 nC typ.) and low on-resistance (RDS(on) = 7 mΩ @ 10 V), enabling fast switching and high efficiency in synchronous buck converters. Its PowerPAK® SO-8 package features an exposed drain pad for direct thermal conduction and matches the SO-8 footprint with identical pinout.
The device supports gate drive voltages from 4.5 V to 10 V, delivers 17 A continuous current at VGS = 4.5 V with RDS(on) = 9.5 mΩ, and includes integrated body diode with VSD = 0.78 V (typ.) at IS = 4.1 A - critical for freewheeling operation in step-down regulators.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - maximum blocking voltage compatible with 24 V input rails and transient margin in PC VRMs |
| RDS(on) @ 10 V | 7 mΩ - enables <1.5 W conduction loss at 19 A, reducing heat sink requirements in compact DC/DC modules |
| RDS(on) @ 4.5 V | 9.5 mΩ - ensures robust operation with 5 V gate drive in logic-level control stages |
| Qg | 11.5 nC - minimizes switching energy loss and gate driver loading in high-frequency (>500 kHz) PWM designs |
| RthJC | 2.4 °C/W - provides DPAK-equivalent thermal path from junction to PCB copper, enabling >2× power density vs. standard SO-8 |
| ID (TJ = 150 °C) | 19 A - supports high-current CPU/GPU VRM phases without derating on 1" × 1" FR4 boards |
| VGS(th) | 2.0 V (typ.) - ensures reliable turn-on with standard 3.3 V or 5 V logic-level drivers |
Pinout & Package
SI7386DP-T1-GE3 is housed in a leadless PowerPAK® SO-8 package (5.15 mm × 6.15 mm × 1.07 mm), featuring an exposed drain pad on the bottom surface for enhanced thermal transfer. The package maintains mechanical and solder footprint compatibility with standard SO-8, allowing drop-in replacement without PCB redesign.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts 0–20 V gate-source voltage; 100% Rg tested (0.8–2.5 Ω) for predictable switching timing |
| 2 (S) | Source | Reference node for gate drive and current sensing; tied to power ground in high-side synchronous rectifier configurations |
| 3 (S) | Source | Second source connection; paralleled with Pin 2 to reduce source inductance and improve current sharing in high-di/dt applications |
| 4 (S) | Source | Third source connection; further lowers source loop inductance for stable high-frequency operation |
| 5 (D) | Drain | Main power output terminal; connected to exposed bottom pad for low-impedance thermal and electrical path to PCB copper |
| 6 (D) | Drain | Second drain connection; shares current with Pin 5 and bottom pad to minimize resistive loss in high-current paths |
| 7 (D) | Drain | Third drain connection; enhances current distribution across package and improves thermal spreading to board |
| 8 (D) | Drain | Fourth drain connection; completes symmetric drain layout for balanced current handling and EMI reduction |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen II silicon | Enables 7 mΩ RDS(on) at 10 V with 11.5 nC Qg, achieving >95% efficiency in 300 kHz–1 MHz VRMs |
| PowerPAK® SO-8 package | Delivers 2.4 °C/W RthJC - matching DPAK thermal performance while retaining SO-8 footprint and reflow compatibility |
| PWM-optimized switching | Low Qgd/Qgs ratio (3.0/5.8 nC) reduces Miller effect, enabling clean turn-off and minimizing shoot-through risk in synchronous topologies |
| 100% Rg tested | Guarantees gate resistance between 0.8 Ω and 2.5 Ω, ensuring consistent gate drive timing and eliminating need for external gate resistors in most designs |
| Lead-free and halogen-free | Meets RoHS Directive 2011/65/EU and JEDEC JS709C requirements, supporting environmentally compliant industrial and computing systems |
Applications
| PC Voltage Regulator Modules (VRMs) | Server Point-of-Load Converters |
|---|---|
Use Scenario: High-current, multi-phase buck converter supplying core voltage to Intel/AMD CPUs in desktop and workstation motherboards. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300–600 kHz with 19 A continuous current per phase. Use Value: 7 mΩ RDS(on) and 11.5 nC Qg reduce conduction and switching losses by 22% versus legacy SO-8 MOSFETs, enabling higher power density without forced air cooling. |
Use Scenario: 12 V input to 0.8–1.8 V output conversion for FPGA and ASIC power domains in rack-mounted servers. IC Role / Device Role / Timing Role: High-efficiency, thermally constrained power stage in space-limited 2U chassis with ambient temperatures up to 70 °C. Use Value: 2.4 °C/W RthJC allows full 19 A rating on standard 4-layer FR4 boards, eliminating need for thermal vias or copper slugs in cost-sensitive server designs. |
| Graphics Card Power Delivery | Industrial DC/DC Brick Modules |
Use Scenario: Dual-rail GPU VRM supplying up to 400 W to NVIDIA/AMD graphics processors under transient load spikes. IC Role / Device Role / Timing Role: Low-side switch in interleaved 4-phase topology with 500 kHz switching frequency and 30 A peak per phase. Use Value: 9.5 mΩ RDS(on) at 4.5 V gate drive ensures stable operation with 5 V controller ICs, maintaining <1.2 VDS drop during 30 A transients. |
Use Scenario: Compact 30 W isolated DC/DC module for programmable logic controllers and motor drives requiring long-term reliability. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in secondary-side synchronous buck stage, operating continuously at 60 °C ambient. Use Value: -55 to 150 °C operating range and 32 mJ single-pulse avalanche energy rating ensure field reliability under repetitive load dumps and line surges in harsh industrial environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7850DP-T1-GE3 | Higher VDS (40 V), lower RDS(on) (4.5 mΩ @ 10 V), higher Qg (22 nC) | Better suited for 36 V input industrial supplies; less optimal for high-frequency PC VRMs due to increased switching loss | Select when higher voltage margin or lower conduction loss outweighs gate drive capability constraints |
| IRF7470PBF | Same PowerSO-8 package, but 30 V rating, 8.5 mΩ RDS(on) @ 10 V, 15 nC Qg, no halogen-free option | Compatible with existing SO-8 layouts but lacks 100% Rg test and PowerPAK® thermal performance | Choose only if halogen-free compliance is not required and thermal budget permits 15–20% higher junction temperature rise |
Compared with SI7386DP-T1-GE3, Si7850DP-T1-GE3 trades higher voltage headroom and lower RDS(on) for significantly increased gate charge, while IRF7470PBF offers basic SO-8 compatibility but lacks the thermal and process advantages of Vishay's PowerPAK® construction and Gen II trench technology.
Availability
SI7386DP-T1-GE3 is available at Aetrix Electronics and suitable for PC VRMs, server point-of-load converters, graphics card power delivery, and industrial DC/DC brick modules requiring stable component supply, halogen-free compliance, and high-reliability thermal performance.
Supply support for SI7386DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-efficiency, high-reliability solutions for computing and industrial markets.
The SI7386DP-T1-GE3 belongs to Vishay's PowerPAK® SO-8 TrenchFET® Gen II family, engineered specifically for high-frequency, high-current DC/DC conversion where thermal density and switching efficiency are critical design constraints.
FAQ
What is the maximum continuous drain current rating for SI7386DP-T1-GE3 at 70 °C ambient temperature?
The SI7386DP-T1-GE3 supports 16 A continuous drain current at TA = 70 °C with proper PCB thermal management (1" × 1" FR4 board). This rating is derived from its 19 A TJ = 150 °C limit and 56 °C/W steady-state junction-to-ambient thermal resistance, making it suitable for thermally constrained VRM phases without active cooling.
Does SI7386DP-T1-GE3 require a custom PCB footprint, or is it compatible with standard SO-8 layouts?
SI7386DP-T1-GE3 uses the PowerPAK® SO-8 package, which maintains identical pin count, pin spacing (1.27 mm), and outer dimensions (5.15 mm × 6.15 mm) as standard SO-8. It can be mounted directly onto existing SO-8 land patterns, though optimal thermal performance requires extending the drain pad area per Vishay Application Note AN826.
What is the significance of "100% Rg tested" for SI7386DP-T1-GE3?
"100% Rg tested" means every SI7386DP-T1-GE3 unit undergoes production testing to verify gate resistance falls within 0.8–2.5 Ω. This eliminates timing variability in gate drive circuits, ensures predictable turn-on/turn-off behavior, and removes the need for external gate resistors in most high-frequency synchronous buck applications.
Can SI7386DP-T1-GE3 be used in 4.5 V gate drive applications, and what is its RDS(on) under that condition?
Yes, SI7386DP-T1-GE3 is fully specified for 4.5 V gate drive, delivering 9.5 mΩ RDS(on) at ID = 17 A and TJ = 25 °C. This makes it suitable for logic-level controllers and low-voltage gate drivers common in modern CPU VRMs, where 5 V or 3.3 V logic rails are used to drive multiple parallel MOSFETs.
How does the thermal performance of SI7386DP-T1-GE3 compare to a standard SO-8 MOSFET under identical PCB conditions?
Under identical 1" × 1" FR4 mounting, SI7386DP-T1-GE3 achieves ~10 °C/W lower junction-to-ambient thermal resistance than a standard SO-8 device due to its exposed drain pad and optimized PowerPAK® construction. At 2.7 W dissipation, this results in a junction temperature just 2 °C above board temperature versus 43 °C for standard SO-8 - preserving RDS(on) stability and current capacity.
SI7386DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 7mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SI7386DP-T1-GE3 FAQ
1.How can I place an order for SI7386DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7386DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7386DP-T1-GE3 reliable?
The price and inventory of SI7386DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7386DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7386DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7386DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7386DP-T1-GE3?
SI7386DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7386DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7386DP-T1-GE3?
For technical support, including SI7386DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7386DP-T1-GE3 requirements.
6.How does Aetrix verify that SI7386DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7386DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7386DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7386DP-T1-GE3?
All SI7386DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7386DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7386DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7386DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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