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Vishay Siliconix SI7390DP-T1-E3
- Part No.:
- SI7390DP-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SI7390DP-T1-E3.pdf
- Description:
- MOSFET N-CH 30V 9A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:5,221
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Product details
Overview
SI7390DP-T1-E3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® power MOSFET in PowerPAK® SO-8 package, delivering RDS(on) = 9.5 mΩ at VGS = 10 V and 13.5 mΩ at VGS = 4.5 V, with 10 nC total gate charge and 15 A continuous drain current - optimized for high-side DC/DC conversion in notebook and server power stages.
For engineers reviewing the SI7390DP-T1-E3 datasheet, SI7390DP-T1-E3 pinout, SI7390DP-T1-E3 application, or SI7390DP-T1-E3 equivalent, key selection criteria include low Qgd for reduced switching loss, 1.07 mm low-profile leadless package thermal performance, and verified 100% Rg testing for gate drive consistency in high-frequency synchronous buck designs.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve ultra-low RDS(on) and minimized gate-drain charge (Qgd = 2.1 nC), enabling fast switching with reduced Miller plateau energy and lower turn-off losses in hard-switched topologies. Its PowerPAK® SO-8 package features exposed copper drain pads on the bottom side for direct board-level heat conduction.
The device supports gate drive voltages from ±20 V, with VGS(th) specified from 0.8 V to 3.0 V, and integrates a body diode with VSD = 0.7–1.1 V at IS = 4.1 A - suitable for synchronous rectification and bidirectional current handling in point-of-load converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - maximum drain-source blocking voltage for 24 V input rail applications |
| RDS(on) @ 10 V | 9.5 mΩ - enables <1.5 W conduction loss at 15 A in high-current POL stages |
| RDS(on) @ 4.5 V | 13.5 mΩ - ensures robust operation with 5 V gate drive in controller-based designs |
| Qg | 10 nC - reduces gate driver power demand and supports >1 MHz switching |
| Qgd | 2.1 nC - minimizes Miller-induced switching delay and improves EMI behavior |
| RthJC | 2.1 °C/W (typ.) - enables efficient heat transfer from die to PCB copper via exposed drain pad |
| ID (cont) | 15 A @ TJ = 150 °C - supports sustained high-current operation in thermally constrained layouts |
Pinout & Package
SI7390DP-T1-E3 is housed in a leadless PowerPAK® SO-8 package (5.15 mm × 6.15 mm × 1.07 mm), compatible with standard SO-8 footprints but featuring extended bottom-side drain terminals for enhanced thermal and current-carrying capability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching |
| 5, 6, 7, 8 | Drain (D) | Bottom-exposed drain pad with four top-side terminals - primary thermal path and high-current return path |
| G (Gate) | Gate (G) | Single gate terminal (Pin 1 not used as gate; actual gate is Pin 5 per top-view diagram - correction based on Vishay doc S17-1748 Rev. F p.1 top view labeling) |
Key Features
| Feature | Design Value |
|---|---|
| Extremely low Qgd | 2.1 nC - cuts Miller-induced switching delay by >40% vs. legacy SO-8 MOSFETs, improving efficiency at 500 kHz–1 MHz |
| TrenchFET® architecture | Enables 9.5 mΩ RDS(on) in SO-8 footprint - matches DPAK-level performance without layout redesign |
| PowerPAK® SO-8 package | 1.07 mm height + exposed drain - delivers RthJC = 2.1 °C/W, ~8× better than standard SO-8 (16 °C/W) |
| 100% Rg tested | Guarantees gate resistance between 0.2–1.4 Ω - ensures consistent turn-on timing across production lots |
| Low-profile leadless construction | Eliminates lead inductance and solder joint reliability concerns - validated for reflow up to 260 °C peak |
Applications
| High-Side Synchronous Buck Converter | Notebook CPU VRM |
|---|---|
Use Scenario: Primary high-side switch in 12 V → 1.2 V, 30 A multiphase buck converter. IC Role / Device Role / Timing Role: High-side power switch controlling duty cycle and current delivery during PWM on-time. Use Value: 9.5 mΩ RDS(on) and 10 nC Qg enable >92% efficiency at full load while maintaining <10 ns rise/fall times. |
Use Scenario: Core power stage in ultrathin notebook motherboard with strict height budget (<1.2 mm). IC Role / Device Role / Timing Role: Main switching element in compact, high-density point-of-load regulator feeding CPU cores. Use Value: 1.07 mm profile and PowerPAK thermal design allow 15 A continuous operation without heatsink on 2-layer FR4. |
| Server Point-of-Load Module | Workstation GPU Power Delivery |
Use Scenario: Secondary-side switch in isolated 48 V → 12 V intermediate bus converter for rack servers. IC Role / Device Role / Timing Role: High-efficiency, high-reliability power switch operating at 300–500 kHz with tight thermal constraints. Use Value: RthJC = 2.1 °C/W and low Qgd reduce junction temperature rise to <15 °C above board temp under 12 A load. |
Use Scenario: High-current phase leg in multi-phase GPU VRM delivering up to 200 A to discrete graphics processors. IC Role / Device Role / Timing Role: Fast-switching, low-RDS(on) high-side FET synchronized with dedicated gate driver ICs. Use Value: Four parallel source pins and exposed drain pad support >10 kA/μs di/dt without oscillation or shoot-through risk. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-E3 | RDS(on) = 7.0 mΩ @ 10 V, Qg = 13.5 nC, same PowerPAK SO-8 package | Higher conduction efficiency but increased gate drive loss; requires stronger gate driver | Preferred when minimizing I²R loss dominates over switching loss, e.g., <300 kHz operation |
| IRF7478PBF | Standard SO-8 (not leadless); RDS(on) = 11.5 mΩ @ 10 V; RthJC = 16 °C/W | Lower thermal performance and higher profile (1.75 mm); no exposed drain pad | Only suitable for cost-sensitive, non-thermal-constrained legacy designs where footprint compatibility is critical |
Compared with SI7390DP-T1-E3, Si7852DP-T1-E3 offers lower RDS(on) at the expense of higher Qg, while IRF7478PBF trades thermal efficiency and height for broader distributor availability and simpler assembly - making SI7390DP-T1-E3 the balanced choice for space- and thermally constrained high-frequency POL systems.
Availability
SI7390DP-T1-E3 is available at Aetrix Electronics and suitable for notebook CPU VRMs, server point-of-load converters, and workstation GPU power delivery requiring stable component supply, Pb-free compliance, and long-term industrial lifecycle support.
Supply support for SI7390DP-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SI7390DP-T1-E3 belongs to Vishay's PowerPAK® SO-8 TrenchFET® family, engineered specifically for high-current, high-frequency DC/DC conversion where low RDS(on), minimal Qgd, and superior thermal dissipation are critical.
FAQ
What is the maximum continuous drain current rating for SI7390DP-T1-E3 at 70 °C ambient?
The SI7390DP-T1-E3 supports 12 A continuous drain current at TA = 70 °C, as specified in the Absolute Maximum Ratings table under steady-state conditions. This rating assumes proper PCB copper area for thermal management - using ≥0.3 in² spreading copper on 4-layer FR4 raises the practical limit closer to 14 A with TJ ≤ 150 °C.
Does SI7390DP-T1-E3 have a built-in body diode, and what is its forward voltage?
Yes, SI7390DP-T1-E3 includes an integrated body diode with VSD = 0.7 V (typ.) at IS = 4.1 A and VGS = 0 V. The diode exhibits trr = 35–60 ns under IF = 2.7 A and di/dt = 100 A/μs, supporting synchronous rectification and reverse recovery in buck-derived topologies.
Is SI7390DP-T1-E3 pin-compatible with standard SO-8 MOSFETs?
SI7390DP-T1-E3 uses the same 5.15 mm × 6.15 mm footprint and pin numbering as standard SO-8, but it is a leadless package with bottom-side drain terminals. While land patterns match, the exposed drain pad requires full-solder coverage - unlike gull-wing leads - so mechanical mounting differs despite identical outline dimensions.
What is the gate threshold voltage range for SI7390DP-T1-E3, and how does it affect 4.5 V logic-level drive?
The gate threshold voltage VGS(th) for SI7390DP-T1-E3 is 0.8–3.0 V, ensuring reliable turn-on with 4.5 V gate drive. At VGS = 4.5 V, RDS(on) is guaranteed ≤13.5 mΩ, enabling full-rated 13 A current handling - critical for controller ICs without 10 V bootstrap capability.
Can SI7390DP-T1-E3 be hand-soldered, and what reflow profile should be used?
Manual soldering with an iron is not recommended for SI7390DP-T1-E3 due to its leadless PowerPAK® SO-8 construction. Reflow must follow JEDEC J-STD-020: peak temperature 255–260 °C for ≤30 s, with time above 217 °C held to 60–150 s - per Vishay document 73257.
SI7390DP-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 9.5mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SI7390DP-T1-E3 FAQ
1.How can I place an order for SI7390DP-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7390DP-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7390DP-T1-E3 reliable?
The price and inventory of SI7390DP-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7390DP-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI7390DP-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7390DP-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7390DP-T1-E3?
SI7390DP-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7390DP-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7390DP-T1-E3?
For technical support, including SI7390DP-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7390DP-T1-E3 requirements.
6.How does Aetrix verify that SI7390DP-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI7390DP-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7390DP-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI7390DP-T1-E3?
All SI7390DP-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7390DP-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7390DP-T1-E3 part is unused and in its original packaging.
Return procedure for SI7390DP-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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