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Vishay Siliconix SI7392DP-T1-E3
- Part No.:
- SI7392DP-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SI7392DP-T1-E3.pdf
- Description:
- MOSFET N-CH 30V 9A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:8,178
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Product details
Overview
SI7392DP-T1-E3 from Vishay Siliconix is a 30 V, 15 A N-channel TrenchFET® Power MOSFET in PowerPAK® SO-8 package, featuring RDS(on) = 9.75 mΩ at VGS = 10 V and 13.75 mΩ at VGS = 4.5 V, optimized for high-side DC/DC conversion in notebook and server power stages.
For engineers reviewing the SI7392DP-T1-E3 datasheet, SI7392DP-T1-E3 pinout, SI7392DP-T1-E3 application, or SI7392DP-T1-E3 equivalent, key selection criteria include low Qgd (2.6 nC), fast switching (td(off) = 46–70 ns), thermal resistance RthJC = 3.5 °C/W, and RoHS-compliant lead-free construction.
Technical Context
This MOSFET uses Vishay's TrenchFET® process to achieve reduced gate charge and enhanced switching efficiency. Its low Qgd/Qg ratio minimizes Miller-induced turn-off delay, while the PowerPAK® SO-8 package delivers 1.07 mm profile and improved thermal performance over standard SO-8.
The device supports 100 % UIS testing and 100 % Rg screening, ensuring robust avalanche capability (EAS = 45 mJ) and gate resistance consistency (Rg = 1.6–2.7 Ω). It operates across –55 °C to +150 °C junction temperature range with VGS(th) = 1.0–3.0 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage for 12 V and 24 V input DC/DC stages |
| RDS(on) @ 10 V | 9.75 mΩ - Enables <1.5 W conduction loss at 15 A continuous current |
| RDS(on) @ 4.5 V | 13.75 mΩ - Supports logic-level gate drive in 5 V control architectures |
| Qgd | 2.6 nC - Low gate-drain charge reduces switching losses and improves EMI behavior |
| RthJC | 3.5 °C/W (typ.) - Enables efficient heat transfer to PCB copper or heatsink in high-power density designs |
| EAS | 45 mJ - Rated single-pulse avalanche energy ensures reliability under inductive load transients |
| ID (TJ = 150 °C) | 15 A - Continuous drain current rating at max operating junction temperature |
Pinout & Package
Package: PowerPAK® SO-8 (leadless, 6.15 mm × 5.15 mm, 1.07 mm height), bottom-exposed drain terminals for thermal enhancement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts 0–20 V gate drive; threshold 1.0–3.0 V |
| 2 (S) | Source | Reference node for gate drive and current return path; tied to power ground |
| 3 (S) | Source | Parallel source connection to reduce package inductance and improve current sharing |
| 4 (S) | Source | Third source terminal for low-inductance layout in synchronous buck topologies |
| 5 (D) | Drain | Main power output node; internally connected to exposed copper pad on bottom surface |
| 6 (D) | Drain | Second drain terminal; shares current with Pin 5 and bottom thermal pad |
| 7 (D) | Drain | Third drain terminal; enhances current handling and thermal dissipation |
| 8 (D) | Drain | Fourth drain terminal; completes low-resistance path to thermal pad for high-current operation |
Key Features
| Feature | Design Value |
|---|---|
| Extremely low Qgd | 2.6 nC enables faster turn-off and reduced cross-conduction loss in synchronous rectification |
| TrenchFET® architecture | Delivers 30 % lower RDS(on) vs. planar MOSFETs at same die size and voltage class |
| PowerPAK® SO-8 package | 1.07 mm profile and bottom-exposed drain reduce thermal resistance by 40 % vs. standard SO-8 |
| 100 % UIS tested | Guarantees minimum 45 mJ avalanche energy without derating for industrial-grade reliability |
| Halogen-free construction | Complies with IEC 61249-2-21 and RoHS Directive 2002/95/EC for green manufacturing |
Applications
| Notebook CPU VRM | Server DDR Memory Regulator |
|---|---|
Use Scenario: High-efficiency 1–2 phase buck converter supplying core voltage to Intel/AMD mobile CPUs. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300–1000 kHz with 4.5 V gate drive. Use Value: Low RDS(on) at 4.5 V (13.75 mΩ) and low Qgd minimize conduction and switching losses, extending battery life. | Use Scenario: Point-of-load regulator delivering stable 1.2 V to DDR4/DDR5 memory modules in dual-socket servers. IC Role / Device Role / Timing Role: Primary high-side switch in multiphase interleaved topology with tight thermal constraints. Use Value: RthJC = 3.5 °C/W and 15 A rating enable compact layout with minimal heatsinking in dense server PCBs. |
| Industrial PLC Power Module | Telecom Base Station PMU |
Use Scenario: Input-stage switch in isolated DC/DC converter powering field I/O and communication interfaces. IC Role / Device Role / Timing Role: High-side switch in non-isolated buck pre-regulator feeding downstream isolated converters. Use Value: 100 % UIS testing and –55 °C to +150 °C rating ensure operational integrity in uncontrolled ambient environments. | Use Scenario: Load switch and hot-swap controller in distributed power management unit of 5G radio units. IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relays in 24–48 V intermediate bus protection circuits. Use Value: Fast turn-off (tf = 9–17 ns) and low Qg support precise current limiting and fault response within 100 ns windows. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLML6344TRPBF | RDS(on) = 22 mΩ @ 4.5 V; Qgd = 3.1 nC; SOT-23 package; lower current rating (4.3 A) | Targeted at low-power, space-constrained loads (<5 A); not suitable for 15 A server VRMs | Select when board area is critical and thermal budget allows higher RDS(on) |
| Si7850DP-T1-GE3 | RDS(on) = 4.5 mΩ @ 10 V; Qgd = 3.8 nC; same PowerPAK® SO-8 footprint; higher 30 A rating | Designed for higher-current, multi-phase server VRMs where lower conduction loss justifies added cost | Choose for next-gen platforms requiring >20 A per phase and tighter thermal margins |
Compared with IRLML6344TRPBF and Si7850DP-T1-GE3, the SI7392DP-T1-E3 balances mid-range current handling (15 A), low 4.5 V RDS(on), and industry-standard PowerPAK® SO-8 compatibility-making it optimal for mainstream notebook and entry-server power stages where cost, size, and thermal performance intersect.
Availability
SI7392DP-T1-E3 is available at Aetrix Electronics and suitable for notebook CPU VRMs, server DDR memory regulators, and industrial PLC power modules requiring stable component supply and RoHS-compliant manufacturing.
Supply support for SI7392DP-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.
The SI7392DP-T1-E3 belongs to Vishay's TrenchFET® PowerPAK® SO-8 family, engineered specifically for high-frequency, high-efficiency DC/DC conversion in computing and communications infrastructure.
FAQ
What is the maximum continuous drain current rating for SI7392DP-T1-E3 at 70 °C ambient?
The SI7392DP-T1-E3 supports 12 A continuous drain current at TA = 70 °C under standard FR4 board conditions (1" × 1"). This rating reflects thermal derating due to increased ambient temperature and assumes adequate PCB copper area for heat spreading. The device's RthJA (steady state) is 53–70 °C/W, so proper layout is essential to maintain safe junction temperature below 150 °C. SI7392DP-T1-E3 must be mounted with full solder coverage on its exposed drain pad to achieve published thermal performance.
Does SI7392DP-T1-E3 support logic-level gate drive?
Yes, SI7392DP-T1-E3 is fully compatible with logic-level gate drive: its RDS(on) is specified at 4.5 V (13.75 mΩ), and VGS(th) ranges from 1.0 V to 3.0 V, enabling reliable turn-on with standard 3.3 V or 5 V controllers. The device's low Qgd (2.6 nC) further ensures clean switching even with moderate gate resistance. SI7392DP-T1-E3 does not require bootstrap circuitry for high-side use in buck converters when driven by dedicated gate drivers supporting 4.5 V logic levels.
What is the avalanche rating of SI7392DP-T1-E3 and how is it validated?
The SI7392DP-T1-E3 is rated for 30 A single-pulse avalanche current (IAS) and 45 mJ single-pulse avalanche energy (EAS) at TJ = 25 °C. These values are validated via 100 % UIS (Unclamped Inductive Switching) testing during production, per JEDEC JESD24-11. Each SI7392DP-T1-E3 unit undergoes this stress test to guarantee minimum energy handling capability-critical for reliability in DC/DC converters subject to load dump or short-circuit transients.
Is SI7392DP-T1-E3 halogen-free and RoHS compliant?
Yes, SI7392DP-T1-E3 is both halogen-free per IEC 61249-2-21 and RoHS compliant per Directive 2002/95/EC. The "-E3" suffix explicitly denotes lead-free and halogen-free construction. Vishay confirms compliance through material declarations and third-party lab testing. SI7392DP-T1-E3 contains no brominated flame retardants, chlorine, or fluorine above threshold limits, and all terminations are matte tin-plated over copper.
What is the gate resistance specification for SI7392DP-T1-E3 and why does it matter?
The SI7392DP-T1-E3 has a typical gate resistance (Rg) of 2.1 Ω, with min/max bounds of 1.6 Ω and 2.7 Ω. This parameter directly impacts gate drive loop stability and switching speed: lower Rg enables faster turn-on but increases risk of ringing; higher Rg damps oscillation but slows transitions. Because SI7392DP-T1-E3 is 100 % Rg tested, designers can rely on consistent timing behavior across production lots-reducing need for gate resistor tuning in high-volume server and notebook platforms.
SI7392DP-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 9.75mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SI7392DP-T1-E3 FAQ
1.How can I place an order for SI7392DP-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7392DP-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7392DP-T1-E3 reliable?
The price and inventory of SI7392DP-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7392DP-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI7392DP-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7392DP-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7392DP-T1-E3?
SI7392DP-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7392DP-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7392DP-T1-E3?
For technical support, including SI7392DP-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7392DP-T1-E3 requirements.
6.How does Aetrix verify that SI7392DP-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI7392DP-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7392DP-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI7392DP-T1-E3?
All SI7392DP-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7392DP-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7392DP-T1-E3 part is unused and in its original packaging.
Return procedure for SI7392DP-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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