Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7404DN-T1-GE3

Name: SI7404DN-T1-GE3
Brand: Vishay Siliconix
SKU: SI7404DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SI7404DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SI7404DN-T1-GE3.pdf

Description:: MOSFET N-CH 30V 8.5A PPAK 1212-8

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,822

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SI7404DN-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Power MOSFET in a PowerPAK® 1212-8 package, with R_DS(on) = 13 mΩ at V_GS = 10 V, 15 mΩ at 4.5 V, and 22 mΩ at 2.5 V, rated for 13.3 A continuous drain current at T_J = 150 °C - used in Li-ion battery protection circuits requiring fast switching and low conduction loss.

For engineers reviewing the SI7404DN-T1-GE3 datasheet, SI7404DN-T1-GE3 pinout, SI7404DN-T1-GE3 application, or SI7404DN-T1-GE3 equivalent, this page delivers verified electrical parameters, thermal resistance values, gate charge metrics, diode forward voltage, and package-specific rework guidance per Vishay Document 71658 Rev. G.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low R_DS(on) and fast switching, supporting logic-level drive down to 2.5 V V_GS. Its 30 V V_DS rating and 150 °C maximum junction temperature enable robust operation in portable power management systems.

The device integrates a body diode with V_SD = 0.75–1.2 V at I_S = 3.2 A and exhibits Q_g = 20–30 nC, Q_gd = 7.1 nC, and t_d(off) = 64–100 ns under standard test conditions - critical for minimizing switching losses in high-frequency load-switching applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - supports battery protection circuits up to 3S Li-ion packs (12.6 V nominal, 13.2 V max) with margin for transients
R_DS(on) @ 10 V	13 mΩ - enables ≤1.7 W conduction loss at 13.3 A, reducing thermal stress in compact layouts
R_DS(on) @ 4.5 V	15 mΩ - ensures reliable turn-on with common 3.3 V/5 V microcontroller GPIOs without level-shifting
I_D (continuous)	13.3 A @ T_J = 150 °C - defines maximum steady-state current under worst-case ambient + self-heating
Q_g	20–30 nC - determines gate driver strength requirement and switching energy loss in PWM operation
R_thJA	65 °C/W (steady state) - sets thermal rise on 1" × 1" FR4 board; requires heatsinking above ~1.5 W dissipation
V_GS(th)	0.6–1.5 V - guarantees enhancement-mode behavior and predictable turn-on threshold across temperature

Pinout & Package

PowerPAK® 1212-8 is a leadless surface-mount package with exposed drain paddle on bottom side; dimensions 3.30 mm × 3.30 mm. The end of each lead terminal is exposed copper (not plated), and solder fillet at tip is not required for functional interconnection.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Common source connection for internal parallel dies; low-inductance return path for load current
5	Gate (G)	Control input; requires <1.5 V threshold margin to ensure full enhancement at 2.5 V drive
6, 7, 8	Drain (D)	High-current output node tied to exposed copper paddle; primary thermal conduction path to PCB

Key Features

Feature	Design Value
TrenchFET® architecture	Enables 13 mΩ R_DS(on) in 3.3 mm × 3.3 mm footprint - improves power density vs. planar MOSFETs
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC - satisfies environmental compliance for global consumer electronics
Logic-level gate drive	Turns on fully at V_GS ≥ 2.5 V - eliminates need for gate drivers in MCU-controlled battery disconnect switches
Low Q_gd/Q_g ratio	7.1 nC / 20–30 nC ≈ 24–35 % - reduces Miller effect, improving hard-switching stability in protection FETs

Applications

Battery Pack Protection Circuit	USB-C Power Delivery Load Switch
Use Scenario: Integrated into 2- or 3-cell Li-ion battery packs to isolate cells during overcharge, over-discharge, or short-circuit events. IC Role / Device Role / Timing Role: Primary high-side or low-side protection switch controlled by battery management IC (e.g., BQ series). Use Value: 13 mΩ R_DS(on) limits voltage drop to <170 mV at 13 A, preserving pack capacity and enabling accurate voltage sensing.	Use Scenario: Used as inrush-current-limited power switch between USB-C port and system rail in portable devices. IC Role / Device Role / Timing Role: Load switch enabling/disabling VBUS delivery under firmware control via GPIO. Use Value: Fast 40 ns rise time and 50 ns fall time minimize glitch risk during hot-plug transitions while maintaining low standby loss.
Smartphone Backlight LED Driver	Wireless Earbud Charging Case
Use Scenario: Controls current to white LED strings in display backlight modules where space and thermal budget are constrained. IC Role / Device Role / Timing Role: Low-side current sink switch modulated by PWM from display controller. Use Value: 15 mΩ R_DS(on) at 4.5 V allows direct drive from 3.3 V or 5 V logic, eliminating external level shifters and saving PCB area.	Use Scenario: Isolates charging circuitry from battery during sleep mode to reduce quiescent current in compact earbud cases. IC Role / Device Role / Timing Role: High-efficiency, low-leakage isolation switch placed between charger IC and battery terminals. Use Value: IDSS ≤ 1 µA at 30 V ensures <100 nA leakage per switch - critical for multi-week shelf life in sealed consumer devices.

Battery Pack Protection Circuit

USB-C Power Delivery Load Switch

Use Scenario: Integrated into 2- or 3-cell Li-ion battery packs to isolate cells during overcharge, over-discharge, or short-circuit events.

IC Role / Device Role / Timing Role: Primary high-side or low-side protection switch controlled by battery management IC (e.g., BQ series).

Use Value: 13 mΩ R_DS(on) limits voltage drop to <170 mV at 13 A, preserving pack capacity and enabling accurate voltage sensing.

Use Scenario: Used as inrush-current-limited power switch between USB-C port and system rail in portable devices.

IC Role / Device Role / Timing Role: Load switch enabling/disabling VBUS delivery under firmware control via GPIO.

Use Value: Fast 40 ns rise time and 50 ns fall time minimize glitch risk during hot-plug transitions while maintaining low standby loss.

Smartphone Backlight LED Driver

Wireless Earbud Charging Case

Use Scenario: Controls current to white LED strings in display backlight modules where space and thermal budget are constrained.

IC Role / Device Role / Timing Role: Low-side current sink switch modulated by PWM from display controller.

Use Value: 15 mΩ R_DS(on) at 4.5 V allows direct drive from 3.3 V or 5 V logic, eliminating external level shifters and saving PCB area.

Use Scenario: Isolates charging circuitry from battery during sleep mode to reduce quiescent current in compact earbud cases.

IC Role / Device Role / Timing Role: High-efficiency, low-leakage isolation switch placed between charger IC and battery terminals.

Use Value: IDSS ≤ 1 µA at 30 V ensures <100 nA leakage per switch - critical for multi-week shelf life in sealed consumer devices.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3025LSD-13	R_DS(on) = 23 mΩ @ 4.5 V; SO-8 package; higher R_DS(on), larger footprint	Less suitable for space-constrained battery packs but offers easier manual rework	Select when board-level repairability outweighs power density requirements
AO3400	R_DS(on) = 28 mΩ @ 4.5 V; SOT-23 package; lower current rating (5.7 A)	Limited to sub-5 A loads; insufficient for main pack protection but viable for auxiliary rails	Choose only for low-power auxiliary switching where cost and size dominate performance needs

Compared with DMN3025LSD-13 and AO3400, SI7404DN-T1-GE3 delivers superior R_DS(on) and current capability in a smaller footprint, making it optimal for high-density Li-ion protection where thermal and conduction efficiency are critical - though its leadless PowerPAK® requires controlled reflow rather than hand-soldering.

Availability

SI7404DN-T1-GE3 is available at Aetrix Electronics and suitable for Li-ion battery protection, USB-C power delivery load switching, smartphone backlight control, and wireless earbud charging case isolation requiring stable component supply and halogen-free compliance.

Supply support for SI7404DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on reliability and power efficiency.

The Si7404DN product line targets high-efficiency, space-constrained power management in portable electronics - specifically engineered for battery protection, load switching, and DC-DC converter synchronous rectification.

FAQ

What is the maximum continuous drain current rating for SI7404DN-T1-GE3 at 70 °C ambient temperature?

The SI7404DN-T1-GE3 supports 10.6 A continuous drain current at T_A = 70 °C and T_J = 150 °C, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating due to reduced heat dissipation at elevated ambient temperatures and must be validated against actual PCB layout and airflow conditions. The SI7404DN-T1-GE3 datasheet (Document 71658 Rev. G) confirms this rating under steady-state conditions with proper thermal management.

Does SI7404DN-T1-GE3 support gate drive from a 3.3 V microcontroller without a level shifter?

Yes, SI7404DN-T1-GE3 is fully compatible with 3.3 V logic-level gate drive: its R_DS(on) is specified at 15 mΩ with V_GS = 4.5 V and remains usable at 22 mΩ with V_GS = 2.5 V. Since most 3.3 V MCUs deliver ≥3.0 V under load, the SI7404DN-T1-GE3 achieves strong enhancement well within safe operating margins - no level shifter required for typical battery protection or load-switch use cases.

What is the thermal resistance from junction to ambient for SI7404DN-T1-GE3 under steady-state conditions?

The SI7404DN-T1-GE3 has a maximum junction-to-ambient thermal resistance (R_thJA) of 81 °C/W under steady-state conditions on a 1" × 1" FR4 board, with a typical value of 65 °C/W. This parameter directly determines temperature rise: for example, 1 W dissipation yields ~65 °C rise above ambient. The SI7404DN-T1-GE3 datasheet specifies these values in Section "Thermal Resistance Ratings" and notes that performance depends on copper area and layer count.

Is SI7404DN-T1-GE3 suitable for reverse polarity protection in portable devices?

No - SI7404DN-T1-GE3 is an N-channel MOSFET intended for low-side switching or high-side configuration with gate drive above source potential. For reverse polarity protection, a P-channel device (e.g., Si7107DP) or dedicated protection IC is recommended. The SI7404DN-T1-GE3 body diode conducts in reverse-biased configurations, so using it for reverse polarity would fail to block fault current unless externally biased - a design not supported by its topology or ratings.

What is the total gate charge (Q_g) specification for SI7404DN-T1-GE3 and how does it impact switching performance?

The SI7404DN-T1-GE3 has a total gate charge (Q_g) of 20–30 nC at V_DS = 15 V, V_GS = 4.5 V, and I_D = 13.3 A. This value determines the energy required to switch the device and influences driver selection: for 1 MHz PWM, average gate drive current exceeds 30 mA. Lower Q_g contributes to faster switching and reduced dynamic losses - a key advantage of the SI7404DN-T1-GE3 in high-frequency load-switch applications.

SI7404DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 8.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 10V

Rds On (Max) @ Id, Vgs:: 13mOhm @ 13.3A, 10V

Vgs(th) (Max) @ Id:: 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SI7404DN-T1-GE3 FAQ

1.How can I place an order for SI7404DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7404DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7404DN-T1-GE3 reliable?

The price and inventory of SI7404DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7404DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI7404DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7404DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7404DN-T1-GE3?

SI7404DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7404DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7404DN-T1-GE3?

For technical support, including SI7404DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7404DN-T1-GE3 requirements.

6.How does Aetrix verify that SI7404DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI7404DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7404DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI7404DN-T1-GE3?

All SI7404DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7404DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7404DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SI7404DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …