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Vishay Siliconix SI7405BDN-T1-E3
- Part No.:
- SI7405BDN-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SI7405BDN-T1-E3.pdf
- Description:
- MOSFET P-CH 12V 16A PPAK 1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:2,769
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Product details
Overview
SI7405BDN-T1-E3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® power MOSFET in PowerPAK 1212-8 package, rated for -12 V VDS, 0.013 Ω RDS(on) at -4.5 V VGS, and -16 A continuous drain current (package-limited). It serves as a high-efficiency load switch in portable device power management circuits.
For engineers reviewing the SI7405BDN-T1-E3 datasheet, SI7405BDN-T1-E3 pinout, SI7405BDN-T1-E3 application, or SI7405BDN-T1-E3 equivalent, key selection criteria include its low gate charge (46 nC at -4.5 V), ultra-low thermal resistance (RthJC = 2.9 °C/W), and lead-free RoHS-compliant construction optimized for space-constrained battery-powered systems.
Technical Context
This MOSFET uses trench-gate silicon technology to achieve high channel density and low on-resistance. Its negative threshold voltage (-0.4 to -1.0 V) enables direct logic-level drive from 1.8 V, 2.5 V, or 3.3 V controllers without level shifting.
The PowerPAK 1212-8 package features an exposed drain pad on the bottom surface for direct thermal coupling to PCB copper, delivering junction-to-case thermal resistance of 2.9 °C/W - over 20× better than TSSOP-8 - while maintaining a footprint smaller than TSOP-6.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -12 V - Maximum reverse-blocking capability for low-voltage P-channel switching in 3.3 V/5 V rail applications |
| RDS(on) @ VGS = -4.5 V | 0.013 Ω - Enables <17 mW conduction loss at 13.5 A, critical for high-current portable load switching |
| ID Continuous | -16 A (TC = 25 °C) - Package-limited current handling, supported by low RthJC for minimal self-heating |
| Qg Total Gate Charge | 46 nC @ -4.5 V - Reduces driver power and switching losses in high-frequency PWM control |
| RthJC | 2.9 °C/W - Direct thermal path from die to PCB enables >3× higher power dissipation vs. SO-8 at same board area |
| VGS(th) | -0.4 to -1.0 V - Ensures full enhancement with 1.8 V logic outputs, eliminating need for gate driver ICs |
| Ciss | 3500 pF - Predictable input capacitance for stable gate drive design and EMI estimation |
Pinout & Package
PowerPAK 1212-8 is a leadless, surface-mount package with an exposed drain thermal pad on the bottom. Dimensions: 3.30 mm × 3.30 mm × 1.05 mm (L × W × H), with 8 terminals arranged in two rows (4 per side).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (Top row, left to right) | Source | Common source connection for P-channel operation; electrically tied internally |
| 5 (Top row, center-right) | Gate | Control terminal; requires negative VGS for turn-on; low Ciss enables fast switching |
| 6, 7, 8 (Bottom row, left to right) | Drain | Main power path output; connected to large exposed copper pad for thermal conduction |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® silicon process | Delivers 0.013 Ω RDS(on) at -4.5 V in 3.3 mm² footprint - 40 % lower on-resistance than comparable TSSOP-8 devices |
| PowerPAK 1212-8 package | Exposes drain pad directly to PCB for 2.9 °C/W junction-to-case thermal resistance - enables 33 W continuous dissipation at TC = 25 °C |
| Logic-level gate drive | VGS(th) range (-0.4 to -1.0 V) ensures reliable turn-on with 1.8 V microcontroller I/O, reducing BOM count |
| Low Qg/Qgd ratio | 46 nC total gate charge with only 14 nC gate-drain charge - minimizes Miller effect and improves switching controllability |
| RoHS-compliant & Pb-free | Meets JEDEC J-STD-020D reflow profile (peak 260 °C); qualified for automated SMT assembly without lead contamination risk |
Applications
| Smartphone Power Management | Tablet Battery Protection |
|---|---|
Use Scenario: Isolating main system rail from USB charging circuit during OTG mode to prevent backfeed. IC Role / Device Role / Timing Role: High-side load switch controlling 3.7 V Li-ion battery path with <100 ns turn-off to meet USB-IF dead-time requirements. Use Value: 0.013 Ω RDS(on) limits voltage drop to <175 mV at 13.5 A, preserving battery runtime and enabling compact PCB layout. | Use Scenario: Enabling/disabling auxiliary power paths (e.g., display backlight, audio codec) based on system sleep state. IC Role / Device Role / Timing Role: Low-quiescent-current P-channel switch driven directly by PMIC GPIO without level shifter. Use Value: -0.4 V VGS(th) allows full enhancement from 1.8 V logic, eliminating external bias components and saving 0.5 mm² board area per switch. |
| Wireless Earbud Charging Case | POS Terminal Power Sequencing |
Use Scenario: Controlling power delivery from case battery to earbuds during insertion/removal detection. IC Role / Device Role / Timing Role: Fast-turning P-channel switch with body diode used for reverse-polarity protection and hot-swap sequencing. Use Value: -0.8 to -1.2 V VSD body diode forward voltage ensures <1.2 V dropout during reverse-current blocking, minimizing heat generation in sealed enclosure. | Use Scenario: Staged activation of 5 V peripherals (scanner, printer) after main CPU boot completes. IC Role / Device Role / Timing Role: Controlled power switch with soft-start behavior enabled via gate resistor network. Use Value: 46 nC Qg permits precise 1–10 ms turn-on timing using standard 10 kΩ gate resistor, ensuring clean power-up sequencing without voltage droop. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7401DN-T1-E3 | Same PowerPAK 1212-8 package, but N-channel (-12 V, 0.009 Ω @ -4.5 V); requires high-side driver or bootstrap circuit | Used where ground-referenced switching is acceptable or where higher efficiency justifies added driver complexity | Select Si7405BDN-T1-E3 when high-side switching with simple logic-level control is required; Si7401DN-T1-E3 only if layout allows N-channel placement with driver support |
| DMN2016LFG-7 | P-channel in 2 mm × 2 mm WDFN; RDS(on) = 0.022 Ω @ -4.5 V; higher RthJA (50 °C/W) limits power handling | Suitable for lower-current (<8 A) portable applications where ultra-compact size outweighs thermal performance | Choose SI7405BDN-T1-E3 for >10 A loads or thermally constrained boards; DMN2016LFG-7 only for space-critical sub-8 A designs |
Compared with Si7401DN-T1-E3 and DMN2016LFG-7, SI7405BDN-T1-E3 uniquely combines logic-level P-channel operation, 0.013 Ω on-resistance, and 2.9 °C/W thermal resistance in a 3.3 mm² footprint - making it the optimal choice for high-current, space-constrained, single-supply load switching without driver overhead.
Availability
SI7405BDN-T1-E3 is available at Aetrix Electronics and suitable for smartphone power management, tablet battery protection, and wireless earbud charging case designs requiring stable component supply and long-term production continuity.
Supply support for SI7405BDN-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The Si7405BDN product line targets portable electronics power switching, delivering ultra-low RDS(on) and advanced packaging to replace larger, thermally inefficient alternatives in battery-powered systems.
FAQ
What is the maximum continuous drain current rating for SI7405BDN-T1-E3 at 70 °C case temperature?
The SI7405BDN-T1-E3 supports -16 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and assumes proper PCB thermal design with adequate copper area under the exposed drain pad to maintain case temperature at or below 70 °C.
Does SI7405BDN-T1-E3 require a gate driver IC when controlled by a 1.8 V microcontroller?
No, SI7405BDN-T1-E3 does not require a gate driver IC when controlled by a 1.8 V microcontroller. Its gate-threshold voltage range of -0.4 V to -1.0 V ensures full enhancement at VGS = -1.8 V, allowing direct interface with 1.8 V logic outputs - a key design advantage confirmed in the Transfer Characteristics graph on page 4 of the datasheet.
What is the thermal resistance from junction to ambient (RthJA) for SI7405BDN-T1-E3 on a standard FR4 board?
The SI7405BDN-T1-E3 has a typical RthJA of 28 °C/W and maximum of 35 °C/W when mounted on a 1" × 1" FR4 board per the datasheet's test condition note (b). This value assumes standard JEDEC test board construction and reflects real-world thermal performance in typical portable PCB layouts.
Can SI7405BDN-T1-E3 be used in reverse polarity protection circuits?
Yes, SI7405BDN-T1-E3 can be used in reverse polarity protection circuits. Its integrated body diode has a forward voltage of -0.8 to -1.2 V at -10 A, and its -12 V VDS rating provides sufficient margin for 5 V or 3.3 V systems. The P-channel configuration allows high-side placement with source tied to input, blocking reverse current while passing forward current with minimal dropout.
Is SI7405BDN-T1-E3 compatible with lead-free reflow soldering processes?
Yes, SI7405BDN-T1-E3 is fully compatible with lead-free reflow soldering. It meets JEDEC J-STD-020D specifications with a peak reflow temperature of 260 °C for 20–40 seconds, as documented in Vishay's solder profile reference (document 73257). The device is marked "-E3" to indicate Pb-free and halogen-free compliance.
SI7405BDN-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 13mOhm @ 13.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 115 nC @ 8 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3500 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.6W (Ta), 33W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SI7405BDN-T1-E3 FAQ
1.How can I place an order for SI7405BDN-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7405BDN-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7405BDN-T1-E3 reliable?
The price and inventory of SI7405BDN-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7405BDN-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI7405BDN-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7405BDN-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7405BDN-T1-E3?
SI7405BDN-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7405BDN-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7405BDN-T1-E3?
For technical support, including SI7405BDN-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7405BDN-T1-E3 requirements.
6.How does Aetrix verify that SI7405BDN-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI7405BDN-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7405BDN-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI7405BDN-T1-E3?
All SI7405BDN-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7405BDN-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7405BDN-T1-E3 part is unused and in its original packaging.
Return procedure for SI7405BDN-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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