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Vishay Siliconix SI7411DN-T1-E3
- Part No.:
- SI7411DN-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SI7411DN-T1-E3.pdf
- Description:
- MOSFET P-CH 20V 7.5A PPAK1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:3,514
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Product details
Overview
SI7411DN-T1-E3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® Power MOSFET in PowerPAK® 1212-8 package, rated for -20 V VDS, 0.019 Ω RDS(on) at -4.5 V VGS, and -11.4 A continuous drain current at TJ = 150 °C. It serves as a low-voltage load switch in space-constrained DC-DC power rails and battery protection circuits.
For engineers reviewing the SI7411DN-T1-E3 datasheet, SI7411DN-T1-E3 pinout, SI7411DN-T1-E3 application, or SI7411DN-T1-E3 equivalent, key selection criteria include its 1.8 V gate threshold compatibility, 1.07 mm profile for ultra-thin PCBs, thermal resistance (RthJC = 2.9 °C/W), and Pb-free/halogen-free compliance per IEC 61249-2-21.
Technical Context
This P-channel MOSFET uses trench-gate silicon technology to achieve low on-resistance with logic-level gate drive down to -1.8 V. Its PowerPAK 1212-8 package integrates four drain terminals and three source terminals for optimized current sharing and thermal dissipation.
The device features a body diode with VSD = -0.8 V at -3.0 A and exhibits Qg = 27 nC (typ) at -4.5 V, supporting efficient switching in high-frequency load-switching applications up to ~1 MHz. Gate threshold voltage is specified between -0.4 V and -1.0 V, enabling reliable turn-on control in low-voltage systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum drain-source blocking voltage for 3.3 V and 5 V rail protection |
| RDS(on) @ VGS = -4.5 V | 0.019 Ω - Enables <19 mW conduction loss at 11.4 A, critical for thermally constrained designs |
| ID (continuous, TJ = 150 °C) | -11.4 A - Sustains full-rated load current without derating in compact heatsinkless layouts |
| Qg | 27 nC (typ) - Supports fast switching with minimal gate drive power in battery-powered systems |
| RthJC | 2.9 °C/W (typ) - Allows direct thermal coupling to PCB copper for passive cooling in portable devices |
| VGS(th) | -0.4 to -1.0 V - Ensures robust turn-on with standard logic-level controllers (e.g., GPIO, PMIC outputs) |
| Package | PowerPAK® 1212-8 - 3.3 × 3.3 mm footprint, 1.07 mm height, leadless, bottom-thermal-pad design |
Pinout & Package
PowerPAK® 1212-8 is a surface-mount, leadless, thermally enhanced package with exposed drain pad on the bottom side. Pin numbering follows bottom-view orientation with pins labeled 1–8 clockwise from top-left corner.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Drain (D) | Four parallel drain terminals tied to internal die drain metallization and bottom thermal pad |
| 5 | Gate (G) | Single gate input; requires ≤ ±8 V drive; low Ciss enables fast edge rates |
| 6, 7, 8 | Source (S) | Three source terminals connected to source bond wires; used for Kelvin sensing or low-inductance return path |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers 0.019 Ω RDS(on) at -4.5 V while maintaining stable threshold across temperature (-55 to 150 °C) |
| PowerPAK® 1212-8 package | Reduces board area by 60% vs. SO-8 and cuts RthJA by 40% via direct thermal path to PCB copper |
| 1.8 V gate rating | Guarantees full enhancement with single-cell Li-ion (2.8–4.2 V) or 3.3 V system rails without level-shifting |
| Pb-free and halogen-free | Complies with RoHS Directive 2011/65/EU and IEC 61249-2-21, suitable for consumer and medical end equipment |
Applications
| USB-C Port Power Switching | Smartphone Battery Disconnect |
|---|---|
Use Scenario: Controlling VBUS enable/disable in USB-C receptacles with dynamic power role swapping. IC Role / Device Role / Timing Role: High-side P-channel load switch managing 5 V/3 A power delivery with reverse-current blocking. Use Value: Low RDS(on) minimizes voltage drop during 3 A operation; compact 3.3 mm² footprint fits tight connector zones. |
Use Scenario: Isolating main Li-ion battery from system during deep sleep or fault conditions. IC Role / Device Role / Timing Role: Bidirectional isolation switch with integrated body diode for safe charge/discharge path management. Use Value: VGS(th) stability ensures consistent turn-off under cold temperature; low Qg enables microsecond response to fault signals. |
| Industrial Sensor Node Power Gating | Wearable Health Monitor Rail Control |
Use Scenario: Powering down MEMS accelerometers and ADCs between sampling intervals in battery-operated IIoT nodes. IC Role / Device Role / Timing Role: Low-quiescent-load switch enabling sub-µA standby current with no external bias required. Use Value: IDSS ≤ -1 µA at 25 °C ensures negligible leakage over multi-day sleep cycles; small thermal mass supports rapid wake-up. |
Use Scenario: Enabling/disabling ECG front-end analog signal chain in patch-style monitors. IC Role / Device Role / Timing Role: Precision rail switch with minimal voltage droop (<60 mV at 200 mA) and no shoot-through risk. Use Value: Tight RDS(on) tolerance (±20%) guarantees predictable rail regulation; 1.07 mm height meets wearable thickness constraints. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7111DN-T1-E3 | Same PowerPAK 1212-8 package but -30 V VDS, higher RDS(on) (0.032 Ω @ -4.5 V), lower ID (-7.5 A) | Better suited for 12 V industrial rails; less optimal for 3.3/5 V battery systems due to higher conduction loss | Select when higher voltage margin is needed and thermal budget allows higher RDS(on) |
| DMN2011LFG-7 | PowerDI 3333 package (3.3 × 3.3 mm), -20 V, RDS(on) = 0.022 Ω @ -4.5 V, ID = -10 A, higher RthJA (50 °C/W) | Compatible footprint but inferior thermal performance; lacks halogen-free certification per IEC 61249-2-21 | Consider only if existing layout uses PowerDI 3333 and halogen-free compliance is not required |
Compared with SI7411DN-T1-E3, Si7111DN-T1-E3 trades voltage headroom for reduced current capability and higher losses, while DMN2011LFG-7 matches footprint but sacrifices thermal efficiency and environmental compliance-making SI7411DN-T1-E3 optimal for compact, thermally sensitive, and regulated consumer designs.
Availability
SI7411DN-T1-E3 is available at Aetrix Electronics and suitable for USB-C power delivery modules, smartphone battery management subsystems, and wearable health monitor power rails requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for SI7411DN-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, miniaturization, and reliability.
The SI7411DN-T1-E3 belongs to Vishay's TrenchFET® PowerPAK® family, engineered specifically for high-density, low-voltage load switching in portable and battery-powered electronics where thermal and space constraints dominate.
FAQ
What is the maximum junction temperature rating for SI7411DN-T1-E3?
The SI7411DN-T1-E3 has an operating junction temperature range of -55 °C to +150 °C, with continuous drain current derated above 25 °C ambient. At TA = 85 °C, the maximum continuous ID is -5.4 A (steady-state) or -8.2 A (10 s pulse), per Absolute Maximum Ratings table in Document Number 72399. This rating enables use in thermally demanding handheld and automotive cabin environments.
Does SI7411DN-T1-E3 support 1.8 V gate drive in production operation?
Yes, SI7411DN-T1-E3 is explicitly rated for 1.8 V gate drive: RDS(on) = 0.034 Ω is guaranteed at VGS = -1.8 V and ID = -2.9 A. The gate threshold voltage range (-0.4 V to -1.0 V) ensures full enhancement even with marginal gate drive margins, making SI7411DN-T1-E3 suitable for direct interfacing with 1.8 V logic outputs without level shifters.
How does the PowerPAK 1212-8 package improve thermal performance versus SO-8?
The PowerPAK 1212-8 package reduces RthJC to 2.9 °C/W (typ) versus ~6–8 °C/W for SO-8, achieved via direct copper exposure on the bottom thermal pad. SI7411DN-T1-E3 leverages this to dissipate 3.6 W at TA = 25 °C-nearly double the power handling of comparable SO-8 MOSFETs-without requiring external heatsinks in most portable applications.
Is SI7411DN-T1-E3 suitable for reverse-polarity protection?
Yes, SI7411DN-T1-E3 can be used for reverse-polarity protection in low-voltage systems. As a P-channel MOSFET, it blocks reverse current when placed in the high-side rail with gate referenced to input. Its low RDS(on) (0.019 Ω) limits forward voltage drop to <22 mV at 1.15 A, and its body diode is rated for -3 A continuous conduction, supporting bidirectional fault handling in SI7411DN-T1-E3-based protection circuits.
What is the gate charge specification for SI7411DN-T1-E3 and why does it matter?
SI7411DN-T1-E3 has Qg = 27 nC (typ) at VGS = -4.5 V, with Qgs = 3.9 nC and Qgd = 7 nC. This low total gate charge enables fast switching with minimal driver power consumption-critical for battery-powered systems where gate drive losses directly impact runtime. It also supports clean turn-on/turn-off edges in high-frequency load switching (e.g., >500 kHz PWM control) without excessive ringing.
SI7411DN-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 19mOhm @ 11.4A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs:
- 41 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SI7411DN-T1-E3 FAQ
1.How can I place an order for SI7411DN-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7411DN-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7411DN-T1-E3 reliable?
The price and inventory of SI7411DN-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7411DN-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI7411DN-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7411DN-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7411DN-T1-E3?
SI7411DN-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7411DN-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7411DN-T1-E3?
For technical support, including SI7411DN-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7411DN-T1-E3 requirements.
6.How does Aetrix verify that SI7411DN-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI7411DN-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7411DN-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI7411DN-T1-E3?
All SI7411DN-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7411DN-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7411DN-T1-E3 part is unused and in its original packaging.
Return procedure for SI7411DN-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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